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simulation study of the parallax ef f ect of gaseous detectors

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Chinese Physics C 2012年第11期36卷 1106-1110页

作者：王小胡吴军龙李江波 fundamental science on nuclear Waste and Environmental Security laboratory Southwest University of Science and Technology School of National Defense science and technology Southwest University of Science and Technology

A simulation study of the parallax effect of gaseous detectors using the Garfield program is reported. A method that mainly uses non-uniform cathode potentials to reduce the parallax error of planar type gas detectors is described. By applying it to MWPC and Micro-pattern gas detectors, the method reduces the parallax broadening with very good results. For a 13° incidence track, the width （FWHM） of the parallax broadening is reduced to less than 20% of the normal one after using the special cathode potentials.

关键词： Garfield simulation parallax error gaseous detector

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

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Chinese Physics B 2019年第10期28卷 387-396页

作者： Xiao-Ming Jin Wei Chen Jun-Lin Li Chao Qi Xiao-Qiang Guo Rui-Bin Li Yan Liu State Key laboratory of Intense Pulsed Radiation simulation and Effect Northwest Institute of Nuclear Technology

This paper presents new neutron-induced single event upset(SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.

关键词： neutron SRAM SEU cross-section

Optical Diagnostics of Multi-Gap Gas Switches for Linear Transformer Drivers

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Plasma science and technology 2014年第7期16卷 677-682页

作者：盛亮李阳孙铁平丛培天张美彭博栋赵吉祯岳志勤魏福利袁媛 State Key laboratory of Intense Pulsed Radiation simulation and Effect Northwest Institute of Nuclear Technology

The trigger characteristics of a multi-gap gas switch with double insulating layers,a square-groove electrode supporter and a UV pre-ionizing structure are investigated aided by a high sensitivity fiber-bundle array detector, a UV fiber detector, and a framing camera, in addition to standard electrical diagnostics. The fiber-bundle-array detector is used to track the turn-on sequence of each electrode gap at a timing precision of 0.6 ns. Each fiber bundle, including five fibers with different azimuth angles, aims at the whole emitting area of each electrode gap and is fed to a photomultiplier tube. The UV fiber detector with a spectrum response of 260-320 nm,including a fused-quartz fiber of 200 μm in diameter and a solar-blinded photomultiplier tube, is adopted to study the effect of UV pre-ionizing on trigger characteristics. The framing camera,with a capacity of 4 frames per shot and an exposure time of 5 ns, is employed to capture the evolution of channel arcs. Based on the turn-on light signal of each electrode gap, the breakdown delay is divided into statistical delay and formative delay. A decrease in both of them, a smaller switch jitter and more channel arcs are observed with lower gas pressure. An increase in trigger voltage can reduce the statistical delay and its jitter, while higher trigger voltage has a relatively small influence on the formative delay and the number of channel arcs. With the UV pre-ionizing structure at 0.24 MPa gas pressure and 60 kV trigger voltage, the statistical delay and its jitter can be reduced by 1.8 ns and 0.67 ns, while the formative delay and its jitter can only be reduced by 0.5 ns and 0.25 ns.

关键词： optical diagnostics multi-gap gas switches linear transformer driver

Compact lithium-glass neutron beam monitor for SANS at CSNS

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nuclear science and Techniques 2018年第9期29卷 165-170页

作者： Ke Zhou Jian-Rong Zhou Yu-Shou Song Xiao-Juan Zhou Zhao-Yang Xie Gui-An Yang Yan-Feng Wang Yuan-Bo Chen Zhi-Jia Sun fundamental science on nuclear safety and simulation technology laboratory Harbin Engineering UniversityHarbin 150001China Dongguan Neutron science Center Dongguan 523803China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China State Key laboratory of Particle Detection and Electronics Beijing 100049China

A small-angle scattering neutron spectrometer for material research is under construction at the China Spallation Neutron Source. An intervening neutron beam monitor behind the sample is needed to measure the beam intensity in order to reduce the measurement uncertainty caused by beam fluctuation. Considering the mobility requirement and limited space, we proposed a compact monitor using a type of lithium-glass scintillator provided by China Building Materials Academy. Its performance was studied experimentally using ^(252)Cf and ^(60)Co *** neutron light yield of the selected scintillator was measured to be 5:3 × 10~3 photons/neutron. The feasibility of n-gamma discrimination using the charge comparison method was verified. By using the Geant4 toolkit, themonitor was modeled with precise physical processes including neutron tracking, scintillation, and optical photon transmission. The gamma sensitivity and detection efficiency were investigated in the simulation. It was concluded that a 0.5-mm-thick lithium-glass scintillator with natural lithium is an appropriate choice to satisfy both the neutron detection efficiency and gamma elimination requirements.

关键词： Neutron beam monitor Lithium glass ngamma discrimination Detection efficiency

Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

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Chinese Physics B 2019年第6期28卷 372-377页

作者： Yan Liu Wei Chen Chaohui He Chunlei Su Chenhui Wang Xiaoming Jin Junlin Li Yuanyuan Xue School of nuclear science and technology Xi’an Jiaotong UniversityXi’an 710049China State Key laboratory of Intense Pulsed Radiation simulation and Effect(Northwest Institute of nuclear technology) Xi’an 710024China

Displacement damage induced by neutron irradiation in China Spallation Neutron Source(CSNS) is studied on bipolar transistors with lateral PNP, substrate PNP, and vertical NPN configurations, respectively. Comparison of the effects on different type transistors is conducted based on displacement damage factor, and the differences are analyzed through minority carrier lifetime calculation and structure analysis. The influence of CSNS neutrons irradiation on the lateral PNP transistors is analyzed by the gate-controlled method, including the oxide charge accumulation, surface recombine velocity,and minority carrier lifetime. The results indicate that the total ionizing dose in CSNS neutron radiation environment is negligible in this study. The displacement damage factors based on 1-MeV equivalent neutron flux of different transistors are consistent between Xi’an pulse reactor(XAPR) and CSNS.

关键词： displacement damage China Spallation Neutron Source(CSNS) reactor neutrons bipolar transistors

Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

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Chinese Physics B 2019年第7期28卷 375-380页

作者： Jia-Nan Wei Chao-Hui He Pei Li Yong-Hong Li Hong-Xia Guo School of nuclear science and technology Xi'an Jiaotong University Xi'an 710049 China State Key laboratory of Intense Pulsed Irradiation simulation and Effect Northwest Institute of Nuclear Technology Xi'an 710024 China

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) *** results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is *** a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating ***, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

关键词： silicon–germanium heterojunction bipolar transistor(SiGe HBT) proton irradiation minority carrier lifetime single-event transient technology computer-aided design(TCAD) simulation

Pattern dependence in synergistic effects of total dose on single-event upset hardness

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Chinese Physics B 2016年第9期25卷 463-467页

作者：郭红霞丁李利肖尧张凤祁罗尹虹赵雯王园明 State Key laboratory of Intense Pulsed Radiation simulation and Effect Northwest Institute of Nuclear Technology

The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory（SRAM） *** were performed under two SEU test environments：3 Me V protons and heavy *** results show different *** heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM *** simulation was *** degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs.

关键词： pattern dependence total dose single event upset(SEU) static random access memory(SRAM)

Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

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science China(Information sciences) 2017年第12期60卷 114-116页

作者： Yuanyuan XUE Zujun WANG Minbo LIU Baoping HE Zhibin YAO Jiangkun SHENG Wuying MA Guantao DONG Junshan JIN State Key laboratory of Intense Pulsed Irradiation simulation and Effect Northwest Institute of Nuclear Technology

Recently,complementary metal-oxide semiconductor image sensors(CISs)have become a key element of the imaging instrument and have been widely used in many scientific applications[1,2]such as space remote sensing,medical imaging,and nuclear power plant ***,CISs used in these harsh radiation environments are susceptible to damage by particles or rays.

关键词： TID Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods CIS SCR

Plasma Density Influence on the Properties of a Plasma Filled Rod Pinch Diode

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Plasma science and technology 2013年第9期15卷 904-907页

作者：孙江孙剑锋杨海亮张鹏飞苏兆锋周军 State Key laboratory of Intense Pulsed Radiation simulation and Efect Northwest Institute of Nuclear Technology

The rod pinch diode is perfect as a source of accelerators for flash X-ray radiography by virtue of a small and stable spot. But it is not suitable for intensive curreЦt drivers because of high diode impendence of 40～60Ω. However, by employing pre-filled plasma into diode prior to the driving current, the diode impendence can be effectively reduced. Plasma density plays an important role in this process, especially for sheath formation and space charge current in the diode. Analysis and simulation results show that a proper range of plasma density could be 1015～1016 cm-3.

关键词： plasma density plasma filled rod pinch diode (PFRPD) sheath space chargecurrent