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Tetranuclear yttrium and gadolinium 2-acetylcyclopentanoate clusters：Synthesis and their use as spin-coating precursors for metal oxide film formation for field-effect transistor fabrication

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Journal of Rare Earths 2018年第10期36卷 1098-1105页

作者： Elaheh Pousaneh Andrea Preuβ Khaybar Assim Tobias Rüffer Marcus Korb Jana Tittmann-Otto Sascha Hermann Stefan E.Schulz Heinrich Lang Technische Universitat Chemnitz Faculty of Natural Sciences Institute of Chemistry Inorganic Chemistry D-09107 Chemnitz Germany Technische Universitiat Chemnitz Center for Mierotechnologies D-09107 Chemnitz Germany fraunhofer institute for electronic nano systems enas Technologie-Campus 3 D-09126 Chemnitz Germany

Lanthanide clusters [Ln4（μ3-OH）2（η2-accp）4（（μ-O）-η2-accp）6]（Ln = Y（4）,Gd（5）; accp = 2-acetylcyclopentanoate） are accessible by treatment of [M（NO33·6 H2 O]（M = Y（1）,Gd（2）） with 3 equiv. of Haccp（3） in presence of NaOH. The molecular structures of 4 and 5） in the solid-state are discussed. The thermal behavior of 4 and 5 was studied by TG under Ar and O2, showing multistep decomposition processes. Additionally, DSC studies were carried out under an atmosphere of O2. PXRD measurements of the TG residues confirm the formation of Ln2 ***-coating experiments were carried out with 4 and 5 for Ln2 O3 film deposition on silicon substrates. The layers are smooth, close and are of thicknesses of 18.87±1.13 nm and 25.59 ± 4.55 nm for Ln = Y and Gd, which was evidenced by SEM and EDX studies. Field-effect transistors were successfully fabricated by deposition of carbon nanotubes on top of the Y2 O3 films and formation of palladium contacts by a lift-off procedure. An on/off ratio of more than 4 orders of magnitude is achieved without considerable leakage currents. These results demonstrate the potential use of spin-coated Y2 O3 as a gate dielectric in electronic devices.

关键词： β-Diketonates Yttrium Gadolinium Thermal analysis Spin coating CNT transistor

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A comprehensive review of miniatured wind energy harvesters

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nano Materials Science 2021年第2期3卷 170-185页

作者： Quan Wen Xianming He Zhuang Lu Reinhard Streiter Thomas Otto Key Laboratory of Fundamental Science of Micro/nano-Device and System Technology Chongqing UniversityChongqing400044People's Republic of China Microsystem Research Center Chongqing UniversityChongqing400044People's Republic of China fraunhofer institute for electronic nano systems(enas) Chemnitz09131Germany

Following the current rapid development of the Internet of Things(IoT)and wireless condition monitoring systems,energy harvesters which use ambient energy have become a key part of achieving an energy-autonomous *** wind energy harvesters have attracted widespread attention because of their great potential of power density as well as the rich availability of wind energy in many possible areas of *** article provides readers with a glimpse into the state-of-the-art of miniature wind energy *** crucial factors for them to achieve high working efficiency under lower operational wind speed excitation are *** potential energy coupling mechanisms are discussed in *** approaches for broadening operational wind-speed-range given a variety of energy coupling mechanisms are also presented,as observed in the *** enhancement mechanisms including hydrodynamic configuration optimization,and non-linear vibration pick-up structure are *** are drawn and the outlook for each coupling mechanisms is presented.

关键词： Energy harvester Wind energy Miniature wind-induced vibration energy harvester Energy coupling mechanism Performance enhancement mechanisms

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Low-power emerging memristive designs towards secure hardware systems for applications in internet of things

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nano Materials Science 2021年第2期3卷 186-204页

作者： Nan Du Heidemarie Schmidt Ilia Polian Department nano Device Technology Fraunhofer Institute for Electronic Nano SystemsTechnologie-Campus 309126ChemnitzGermany Faculty of Electrical Engineering and Information Technology Chemnitz University of Technology(TU Chemnitz)Straße der Nationen 6209126ChemnitzGermany Department of Quantum Detection Leibniz Institute of Photonic Technology(IPHT)Albert-Einstein-Str.907745JenaGermany institute for Solid State Physics Friedrich Schiller University JenaFürstengraben 107743JenaGermany institute of Computer Engineering and Computer Architecture(ITI) University of StuttgartPfaffenwaldring 4770569StuttgartGermany

Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are *** reviewing the state-of-the-art in three highlighted memristive application areas,*** non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,*** the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their *** review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.

关键词： Memristive technology nanoelectronic device Low-power consumption Miniaturization Nonvolatility Reconfigurability In memory computing Artificial intelligence Hardware security primitives Machine learning-related attacks and defenses

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Parallel arrays of Schottky barrier nanowire field effect transistors： nanoscopic effects for macroscopic current output

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nano Research 2013年第6期6卷 381-388页

作者： Sebastian Pregl Walter M. Weber Daijiro Nozaki Jens Kunstmann Larysa Baraban Joerg Opitz Thomas Mikolajick Gianaurelio Cuniberti institute for Materials Science and Max Bergmann Center of Biomaterials TU Dresden Dresden 01062 Germany NaMLab GmbH Dresden 01187 Germany fraunhofer institute IZFP Dresden Dresden 01109 Germany institute for Semiconductors and Microsystems Technology TU Dresden Dresden 01187 Germany Division of IT Convergence Engineering POSTECH Pohang Korea

We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 gA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel arra36 the yield of functioning transistors is dramatically increased and device- to-device variability is reduced compared to single devices. This new nanowire- based platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes （LEDs）, while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.

关键词： silicon nanowire effective Schottky barrier lowering parallel arra^electric field enhancement output current amplification

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