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Realization of robust Ohmic contact for semiconducting black arsenic by coupling with graphene

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Chinese Physics B 2025年第2期34卷 425-429页

作者： Xinjuan Cheng Xuechao Zhai Department of Applied Physics and MIIT Key Laboratory of Semiconductor Microstructures and Quantum SensingNanjing University of Science and TechnologyNanjing 210094China

Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device *** employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black arsenic(BAs),for which the top of the valence band is below the Fermi energy of the order of 10~2 *** Ohmic contact arises from the giant Stark effect induced by van der Waals electron transfer from BAs to graphene,which does not destroy their respective band ***,we show that this intrinsic Ohmic contact remains robust across a wide range of interlayer distances(adjustable by strain)or vertical electric fields,whereas the weak spin splitting of the order of 1 meV induced by symmetry breaking plays little part in Ohmic *** findings reveal the potential applications of graphene–BAs in ultralow dissipation transistors.

关键词： semiconductor technology Ohmic contact heterobilayer Stark effect

Dual-phase interface engineering via parallel modulation strategy for highly reversible Zn metal batteries

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Journal of Energy Chemistry 2025年第2期101卷 163-174页

作者： Zhean Bao Yang Wang Kun Zhang Guosheng Duan Leilei Sun Sinan Zheng Bin Luo Zhizhen Ye Jingyun Huang School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Institute of Wenzhou Zhejiang University Institute of Thermal Science and Power Systems Zhejiang University Longmen Laboratory of Luoyang

The reversibility and stability of aqueous Zn metal batteries（AZMBs） are largely limited by Zn dendrites and interfacial parasitic ***,we propose a parallel modulation strategy to boost the reversibility of the Zn anode by introducing N,N,N',N'-tetramethylchloroformamidinium hexafluorophosphate（TCFH） as an additive in the *** is composed of PF6-and TN+with opposite ***6-can spontaneously induce the in-situ generation of ZnF2solid electrolyte interface（SEI） on the anode,which can improve the transport kinetics of Zn2+at the interface,thus promoting the rapid and uniform deposition of Zn as well as inhibiting the growth of *** addition,TN+is enriched at the anode surface during Zn deposition through the anchoring effect,which brings a reconfiguration of the ion/molecule *** anchored-TN+reduces the concentrations of H2O and SO42-,sufficiently restraining the parasitic *** to the dual-phase interface engineering constructed of PF6-and TN+in parallel,the symmetric cell with the proposed electrolyte survives long cycling stability over750 h at 20 mA cm-2,10 mAh *** study offers a distinct viewpoint to the multidimensional optimization of Zn anodes for high-performance AZMBs.

关键词： Anchoring effect Aqueous Zn metal batteries Electrolyte additive Solid electrolyte interface Zn anode

24.4 THz·V fT ×BV figure-of-merit AlN/GaN/AlN MISHEMTs with thin AlN buffer layer

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Science China(Information Sciences) 2025年

作者： Chaoqun ZHANG Hong ZHOU Sami ALGHAMDI Kun ZHANG Zhihong LIU Yue HAO Jingcheng ZHANG State Key Laboratory of Wide-Bandgap semiconductor Devices and Integrated Technology Xidian University Guangzhou Wide Bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University Electrical and Computer Engineering Department King Abdulaziz University

Gallium nitride-based high-electron-mobility-transistors(HEMTs) have gained widespread interest and become primary candidates for next-generation high-frequency and high-power RF electronics, due to their wide bandgap,high breakdown field, and strong polarization-induced highdensity 2-dimensional electron gas (2DEG) at the heterojunction interface. AlGaN-based barriers and GaN-based buffers have become the dominant commercialized device structures for radar, satellite, and 5G communications [1, 2].

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Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias

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Nuclear Science and Techniques 2025年第1期36卷 49-58页

作者： Pei-Pei Hu Li-Jun Xu Sheng-Xia Zhang Peng-Fei Zhai Ling Lv Xiao-Yu Yan Zong-Zhen Li Yan-Rong Cao Xue-Feng Zheng Jian Zeng Yuan He Jie Liu Institute of Modern Physics Chinese Academy of Sciences(CAS)Lanzhou 730000China Key Laboratory of Wide Band‑gap semiconductor Materials Ministry of EducationXidian UniversityXi’an 710071China University of Chinese Academy of Sciences(UCAS) Beijing 100049China

Gallium nitride(GaN)-based devices have significant potential for space ***,the mechanisms of radiation damage to the device,particularly from strong ionizing radiation,remains *** study investigates the effects of radiation on p-gate AlGaN/GaN high-electron-mobility transistors(HEMTs).Under a high voltage,the HEMT leakage current increased sharply and was accompanied by a rapid increase in power density that caused"thermal burnout"of the *** addition,a burnout signature appeared on the surface of the burned devices,proving that a single-event burnout effect ***,degradation,including an increase in the on-resistance and a decrease in the breakdown voltage,was observed in devices irradiated with high-energy heavy ions and without *** latent tracks induced by heavy ions penetrated the heterojunction interface and extended into the GaN ***,a new type of N_(2)bubble defect was discovered inside the tracks using Fresnel *** accumulation of N_(2)bubbles in the heterojunction and buffer layers is more likely to cause leakage and *** study indicates that electrical stress accelerates the failure rate and that improving heat dissipation is an effective reinforcement method for GaN-based devices.

关键词： GaN HEMTs Heavy ions Single-event burnout Latent tracks Degradation

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1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

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Science China(Information Sciences) 2025年第2期68卷 389-390页

作者： Yitao FENG Hong ZHOU Sami ALGHAMDI Hao FANG Xiaorong ZHANG Yanbo CHEN Guotao TIAN Saud WASLY Yue HAO Jincheng ZHANG Key Lab of Wide Band Gap semiconductor Materials and Devices School of MicroelectronicsXidian University Center of Excellence in Intelligent Engineering Systems (CEIES) King Abdulaziz University China Resources Microelectronics Limited

In recent years, large-area wide-bandgap（WBG） semiconductor materials have achieved numerous notable breakthroughs [1,2]. The ultra-WBG semiconductor β-Ga2O3,with its excellent material properties, is ideally suited for the fabrication of power devices. Moreover, it offers easily obtainable large-area substrates, with reported sizes up to 6 inches, produced through melt-grown crystal growth methods. These characteristics make β-Ga2O3highly attractive for future low-cost commercialization. Despite these advances, most research has focused on low-current and small-size diodes, with few studies addressing high-current and large-size diodes.

关键词： Schottky barrier diodes

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An unexpected vortex field by twist

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Science China Materials 2025年

作者： Yunhao Lu School of Physics Zhejiang University State Key Laboratory of Silicon and Advanced semiconductor Materials School of Materials Science & Engineering Zhejiang University

Due to their reduced dimensionality and strong quantum confinement,two-dimensional (2D) materials have emerged as a versatile platform for exploring quantum phenomena absent in their bulk *** 2D materials to form bilayer heterostructures or homostructures introduces additional degrees of freedom to tune or even create novel quantum properties[1].A prominent example is the discovery of flat bands and superconductivity in twisted bilayer graphene at a small“magic”twist angle,where suppressed electron kinetics amplifies electron correlation,giving rise to emergent quantum phenomena[2].Another notable case is the formation of quasicrystals in bilayer graphene at the large twist angle,which further expands the possibilities for tailoring electronic structures[3].

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Unveiling the relationship between Fabry-Perot laser structures and optical field distribution via symbolic regression

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Optoelectronics Letters 2025年第3期21卷 149-154页

作者： LI Wenqiang WU Min LI Weijun HAO Meilan YU Lina Ann Lab Institute of Semiconductors Chinese Academy of Sciences School of Electronic Electrical and Communication Engineering & School of Integrated Circuits University of Chinese Academy of Sciences Beijing Key Laboratory of semiconductor Neural Network Intelligent Sensing and Computing Technology

In recent years, machine learning (ML) techniques have been shown to be effective in accelerating the development process of optoelectronic devices. However, as"black box"models, they have limited theoretical interpretability. In this work, we leverage symbolic regression (SR) technique for discovering the explicit symbolic relationship between the structure of the optoelectronic Fabry-Perot (FP) laser and its optical field distribution, which greatly improves model transparency compared to ML. We demonstrated that the expressions explored through SR exhibit lower errors on the test set compared to ML models, which suggests that the expressions have better fitting and generalization capabilities.

关键词： A

RGB Color-Discriminable Photonic Synapse for Neuromorphic Vision System

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Nano-Micro Letters 2025年第4期17卷 39-62页

作者： Bum Ho Jeong Jaewon Lee Miju Ku Jongmin Lee Dohyung Kim Seokhyun Ham Kyu-Tae Lee Young-Beom Kim Hui Joon Park Department of Organic and Nano Engineering&Human-Tech Convergence Program Hanyang UniversitySeoul 04763Korea Department of semiconductor Engineering Hanyang UniversitySeoul 04763Korea Department of Mechanical Engineering Hanyang UniversitySeoul 04763Korea Department of Physics Inha UniversityIncheon 22212Korea

To emulate the functionality of the human retina and achieve a neuromorphic visual system,the development of a photonic synapse capable of multispectral color discrimination is of paramount ***,attaining robust color discrimination across a wide intensity range,even irrespective of medium limitations in the channel layer,poses a significant ***,we propose an approach that can bestow the color-discriminating synaptic functionality upon a three-terminal transistor flash memory even with enhanced discriminating *** incorporating the strong induced dipole moment effect at the excitation,modulated by the wavelength of the incident light,into the floating gate,we achieve outstanding RGB color-discriminating synaptic functionality within a remarkable intensity range spanning from 0.05 to 40 mW cm^(-2).This approach is not restricted to a specific medium in the channel layer,thereby enhancing its *** effectiveness of this color-discriminating synaptic functionality is demonstrated through visual pre-processing of a photonic synapse array,involving the differentiation of RGB channels and the enhancement of image contrast with noise ***,a convolutional neural network can achieve an impressive inference accuracy of over 94%for Canadian-Institute-For-Advanced-Research-10 colorful image recognition task after the *** proposed approach offers a promising solution for achieving robust and versatile RGB color discrimination in photonic synapses,enabling significant advancements in artificial visual systems.

关键词： Organic field-effect transistor Photonic synapse Excited-state dipole moment RGB color discrimination Neuromorphic visual system

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Editor’s note

Science China(Information Sciences) 2011年第5期54卷 913-914页

作者： HUANG Ru, Guest Editor Peking University Beijing 100871, China ZHAO Bin, Guest Editor fairchild semiconductor 32 Discovery, Irvine, CA 92618, USA WANG RunSheng, Guest Editor Assistant CAI YiMao, Guest Editor Assistant Peking University Beijing 100871, China Peking University Beijing China fairchild semiconductor Irvine USA

In recent years, driven by ever-increasing market demand in computing, communication, and multimedia applications, the microelectronics industry has undergone rapid development. Because of technical innovation and advances in almost all aspects of materials, processes, equipment, devices, circuits and systems, siliconbased logic and memory IC technologies using nano-scaling continue to be the industry’s major R&D focus. This maintains microelectronics industry adherence to the traditional "Moore’s Law", increasing the function

关键词： than s note Editor