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Journal of Semiconductors 2016年第10期37卷 60-64页

作者：吴冬雪马平刘波亭张烁王军喜李晋闽 research and Development center for solid state lighting Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China state Key Laboratory of solid state lighting Beijing 100083 China Beijing engineering research center for the 3rd Generation Semiconductor Materials and application Beijing 100083 China

The effect of patterned sapphire substrate（PSS） on the top-surface（P-Ga N-surface） and the bottomsurface（sapphire-surface） of the light output power（LOP） of Ga N-based LEDs was investigated, in order to study the changes in reflection and transmission of the Ga N-sapphire interface. Experimental research and computer simulations were combined to reveal a great enhancement in LOP from either the top or bottom surface of Ga N-based LEDs, which are prepared on patterned sapphire substrates（PSS-LEDs）. Furthermore, the results were compared to those of the conventional LEDs prepared on the planar sapphire substrates（CSS-LEDs）. A detailed theoretical analysis was also presented to further support the explanation for the increase in both the effective reflection and transmission of PSS-Ga N interface layers and to explain the causes of increased LOP values. Moreover, the bottom-surface of the PSS-LED chip shows slightly increased light output performance when compared to that of the top-surface. Therefore, the light extraction efficiency（LEE） can be further enhanced by integrating the method of PSS and flip-chip structure design.

关键词： light output power transmission effective reflection patterned sapphire substrate light-emitting diodes

LED Fluorescent Lamp Design

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LED Fluorescent Lamp Design

2011 2nd Asia-Pacific Conference on Wearable Computing systems

作者： Tiecheng Gao Yanjin Ai Haixia An solid state lighting optoelectronic device Engineering Research Center of Solid-State Lighting(Engineering Research Center of High Power Solid State Lighting Application SystemMinistry of Education Tianjin vocational Institute

This article has designed the drive power of LED fluorescent lamp based on bp2808 control chip, and realized the design of 10 Wled fluorescent lamp in a way of series and parallel connection by using 60 m W LED light source. Results show that efficiency of LED fluorescent lamp is 50% higher than traditional lamp. Bp2808 control chip possesses good precision of constant current and high efficiency, which enable it to be suitable for LED lamp as drive chip.

关键词： fluorescent lamp bp2808 LED constant current

Study of optical properties of GaMnN

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Study of optical properties of GaMnN

2011 2nd Asia-Pacific Conference on Wearable Computing systems (APWCS 2011);2011 International Conference on Intelligent Control and Information Technology(ICICIT 2011)

作者： Xing Hai-Ying Niu Pin-Juan Yu Li-Yuan Zhang Jian-Xin Sun Shao-Jiao Yao Guang-Rui School of Information and Communication engineering engineering research center of solid-state lighting(engineering research center of high power solid state lighting application system Ministry of Education

In our previous work,room temperature ferromagnetism of GaMnN thin films with different Mn concentrations were grown on c-sapphire substrates by metal organic chemical vapor deposition(MOCVD).Compared with GaN,the results of optical absorption spectra for the GaMnN samples were shown that a peak of absorption can be observed near 1.44 eV,and the absorption coefficient increased with the increase of the Mn *** this paper,electronic structure and optical properties for several Mn concentrations doping GaN were calculated using density functional *** theoretical data were in excellent agreement with the experimental *** with theoretical data,the peak of absorption near1.44 eV is assigned to T→E internal transition between the e state and the t state of Mn ion.

关键词： GaMnN optical absorption spectra density functional theory

Femtosecond Optical Parametric Amplifier for Petawatt Nd：Glass Lasers

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Chinese Physics Letters 2006年第5期23卷 1204-1206页

作者：张小民钱列加袁鹏罗航朱鹤元朱启华魏晓峰范滇元 state Key Laboratory for Advance Photonic Materials and Devices Department of Optical Science and Engineering Fudan University Shanghai 200433 National research center for high power solid-state Lasers Mianyang 621900

We study a femtosecond Ti：sapphire laser pumped optical parametric amplifier （OPA） at 1053nm. The OPA Generates stable signal pulses with duration smaller than l OOfs, wavelength drift smaller than 0.5 nm, and pulseto-pulse fluctuation of about ±4%, by employinG an external seeder. In a terawatt laser pumped large-aperture LiNbOa OPA, pulse energy at signal has been scaled up to 4mJ. This m J-class femtosecond OPA at 1053nm presents a feasible alternative to optical parametric chirped-pulse amplification, and is ready to be applied to petawatt lasers.

关键词： 3 MU-M AMPLIFICATION GENERATION PULSES CONVERSION system

The research of operational transconductance amplifier

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The research of operational transconductance amplifier

2011 2nd Asia-Pacific Conference on Wearable Computing systems

作者： Jin Feiyue Fu Xiansong Niu Pingjuan Yang Guanghua Gao Tiecheng engineering research center of high power solid state lighting application system Ministry of Education

A topology structure of operational transconductance amplifier is proposed to be devised in this paper. In order to make it have the feature of high-speed, large bandwidth, and high stability, a two-stage cascode structure amplifier is designed by using cascaded single-stage amplifier. And several important parameters are calculated and analyzed theoretically. Finally the designed cascode two-stage amplifier is debugged by using Hspice. And the related parameter values are obtained. The magnification is more than 100 dB, unity gain bandwidth is about 635 MHz, and output swing is 4V. And the total transconductance of operational transconductance amplifier is 8.8A/V.

关键词： operational transconductance amplifier Hspice two-stage operational amplifier

The Low Beam Light Optical Configuration of high Brightness LED Headlamp

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The Low Beam Light Optical Configuration of High Brightness ...

2011 2nd International Conference on Advanced Measurement and Test (AMT 2011)

作者： Tiecheng Gao Suying Yao Haitao Tian School of Electronic and Information engineering Tianjin University solid state lighting optoelectronic deviceEngineering Research Center of Solid-State Lighting(Engineering Research Center of High Power Solid State Lighting Application SystemMinistry of Education

The low beam light optical configuration of high brightness LED headlamp is designed in this paper. When we design low beam light, three same optical units are overlapped to achieve sufficient luminous flux. LED optical source is arranged and packaged into a LED by using multi-chip in linear array. Each unit uses multi-ellipsoid reflector to converge light issued by multi-chip high-power LED light source, which covers partial light to form by light-dark blocking some of the light baffle to form an cut-line, the light is converged through optical lens to obtain the light-type that low beam light requires. The application of ASAP software implements the simulation, and the test results show that this design meets the national standard of low beam light.

关键词： Optical design LED Headlamps cut-line ASAP

The Low Beam Light Optical Configuration of high Brightness LED Headlamp

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The Low Beam Light Optical Configuration of High Brightness ...

2011 2nd Asia-Pacific Conference on Wearable Computing systems

作者： Tiecheng Gao Suying Yao Haitao Tian School of Electronic and Information engineering Tianjin University solid state lighting optoelectronic device Engineering Research Center of Solid-State Lighting(Engineering Research Center of High Power Solid State Lighting Application System Ministry of Education

The low beam light optical configuration of high brightness LED headlamp is designed in this paper. When we design low beam light, three same optical units are overlapped to achieve sufficient luminous flux. LED optical source is arranged and packaged into a LED by using multichip in linear array. Each unit uses multi-ellipsoid reflector to converge light issued by multi-chip high-power LED light source, which covers partial light to form by light-dark blocking some of the light baffle to form an cut-line, the light is converged through optical lens to obtain the light-type that low beam light requires. The application of ASAP software implements the simulation, and the test results show that this design meets the national standard of low beam light.

关键词： Optical design LED Headlamps cut-line ASAP

Study on Luminance Uniformity Correction for the LED Flat Panel Display

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Study on Luminance Uniformity Correction for the LED Flat Pa...

2011 2nd International Conference on Advanced Measurement and Test (AMT 2011)

作者： Xu Xiuzhi Feng Yongmao Wang Shufan Niu Pingjuan School of Information and Communication engineering Tianjin Polytechnic University engineering research center of solid-state lighting (engineering research center of high power solid state lighting application system Ministry of Education

Non-uniformity of luminance for big screen of LED flat panel display is one of problems affecting its display qualities, but existing widely. This paper analyzes the influences of luminance non-uniformity on LED display images, gives a plan on luminance uniformity correction based on CCD, and then proceeds correction algorithm of correction technology, at last conducts luminance non-uniformity correction for LED flat panel display from brightness datum of CCD image processing, which gives results and analysis before and after correcting.

关键词： flat panel display non-uniformity luminance LED

A Compact Nanosecond-Pulse Shaping system Based on Pulse Stacking in Fibres

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Chinese Physics Letters 2006年第8期23卷 2074-2076页

作者：隋展林宏奂王建军赵宏明李明中钱列加朱鹤元范滇元 state Key Laboratory for Advance Photonic Materials and Devices Department of Optical Science and EngineeringFudan University Shanghai 200433 National research center for high power solid-state Lasers PO Box 919 Mianyang 621900

We demonstrate a compact pulse shaping system based on temporal stacking of pulses in fibres,by which synchronized pulses of ultrashort and nanosecond lasers can be *** system may generate shape-controllable pulses with a fast rise time and high-resolution within a time window of -2.2ns by adjusting variable optical attenuators in the 32 fibre channels *** the help of optical amplifiers,the system delivers mJ-level pulses with a signal-to-noise ratio of-35dB.

关键词： LASERS LIGHT

Facilitating prelithiation of silicon carbon anode by localized high-concentration electrolyte for high-rate and long-cycle lithium storage

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Carbon Energy 2024年第6期6卷 216-233页

作者： Yuanxing Zhang Borong Wu Jiaying Bi Xinyu Zhang Daobin Mu Xin-Yu Zhang Ling Zhang Yao Xiao Feng Wu School of Materials Science and engineering Beijing Institute of TechnologyBeijingChina Chongqing Innovation center Beijing Institute of TechnologyChongqingChina College of New Energy Xi′an Shiyou UniversityXi′anChina Institute for Carbon Neutralization College of Chemistry and Materials EngineeringWenzhou UniversityWenzhouChina Key Laboratory of Advanced Energy Materials Chemistry(Ministry of Education) Nankai UniversityTianjinChina

The commercialization of silicon-based anodes is affected by their low initial Coulombic efficiency(ICE)and capacity decay,which are attributed to the formation of an unstable solid electrolyte interface(SEI)***,a feasible and cost-effective prelithiation method under a localized highconcentration electrolyte system(LHCE)for the silicon-silica/graphite(Si-SiO_(2)/C@G)anode is designed for stabilizing the SEI layer and enhancing the *** thin SiO_(2)/C layers with-NH_(2) groups covered on nano-Si surfaces are demonstrated to be beneficial to the prelithiation process by density functional theory calculations and electrochemical *** SEI formed under LHCE is proven to be rich in ionic conductivity,inorganic substances,and flexible organic ***,faster Li+transportation across the SEI further enhances the prelithiation effect and the rate performance of Si-SiO_(2)/C@G *** also leads to uniform decomposition and high stability of the SEI with abundant organic *** a result,the prepared anode shows a high reversible specific capacity of 937.5 mAh g^(-1)after 400 cycles at a current density of 1 *** 811‖Li-SSGLHCE full cell achieves a high-capacity retention of 126.15 mAh g^(-1)at 1 C over 750 cycles with 84.82%ICE,indicating the great value of this strategy for Si-based anodes in large-scale applications.

关键词： localized high-concentration electrolytes prelithiation SEI layer silicon anode