<正>The design and implementation of a CMOScompatible high-voltage IC process is *** is shown that small changes can be made in an established n-well process to produce both high-voltage p- and nchannel power LDMOS ...
<正>The design and implementation of a CMOScompatible high-voltage IC process is *** is shown that small changes can be made in an established n-well process to produce both high-voltage p- and nchannel power LDMOS *** changes do not affect the performance of the low-voltage devices, and result in breakdown voltages of 50 volts for the pchannel, and 120 volts for the n-channel power transistors.
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