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A Piezoelectrically Driven microrobot Using a Novel Monolithic Spatial Parallel Mechanism as Its Hip Joint

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Journal of Bionic Engineering 2024年第2期21卷 803-820页

作者： Guangping Wu Ziyang Wang Jiaxin Zhao Feng Cui Xinghan Cai National Key laboratory of Advanced micro and Nano Manufacture Technology Shanghai Jiao Tong UniversityShanghai200240China Department of micro-Nano electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai200240China

Inspired by the fast,agile movements of insects,we present a 1.9 g,4.5 cm in length,piezoelectrically driven,quadrupedal *** microrobot uses a novel spatial parallel mechanism as its hip joint,which consists of two spatially orthogonal slider-crank *** mechanism maps two inputs of two independent actuators to the decoupled swing and lift outputs of a leg,and each leg can produce the closed trajectories in the sagittal plane necessary for robot ***,the kinematics of the transmission are analyzed,and the parameters of the flexure hinges are designed based on geometrical constraints and yield *** hip joints,legs and exoskeletons are integrated into a five-layer standard laminate for monolithic fabrication which is composed of two layers of carbon fiber,two layers of acrylic adhesive and a polyimide *** measured output force(15.97 mN)of each leg is enough to carry half of the robot’s weight,which is necessary for the robot to move *** has been proven that the robot can successfully perform forward and turning *** to the microrobot fabricated with discrete components,the monolithically fabricated microrobot is more capable of maintaining the original direction of locomotion when driven by a forward signal and has a greater speed,whose maximum speed is 25.05 cm/s.

关键词： Insect-like Crawling microrobot Piezoelectric drive Parallel mechanism Monolithic fabrication

VSe_(2)/V_(2)C heterocatalyst with built-in electric field for efficient lithium-sulfur batteries:Remedies polysulfide shuttle and conversion kinetics

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Journal of Energy Chemistry 2024年第2期89卷 397-409,I0010页

作者： Yanwei Lv Lina Bai Qi Jin Siyu Deng Xinzhi Ma Fengfeng Han Juan Wang Lirong Zhang Lili Wu Xitian Zhang Key laboratory for Photonic and electronic Bandgap Materials Ministry of EducationSchool of Physics and Electronic EngineeringHarbin Normal UniversityHarbin 150025HeilongjiangChina

Lithium sulfur(Li-S)battery is a kind of burgeoning energy storage system with high energy ***,the electrolyte-soluble intermediate lithium polysulfides(Li PSs)undergo notorious shuttle effect,which seriously hinders the commercialization of Li-S ***,a unique VSe_(2)/V_(2)C heterostructure with local built-in electric field was rationally engineered from V_(2)C parent via a facile thermal selenization *** exquisitely synergizes the strong affinity of V_(2)C with the effective electrocatalytic activity of VSe_(2).More importantly,the local built-in electric field at the heterointerface can sufficiently promote the electron/ion transport ability and eventually boost the conversion kinetics of sulfur *** Li-S battery equipped with VSe_(2)/V_(2)C-CNTs-PP separator achieved an outstanding initial specific capacity of 1439.1 m A h g^(-1)with a high capacity retention of 73%after 100 cycles at0.1 *** impressively,a wonderful capacity of 571.6 mA h g^(-1)was effectively maintained after 600cycles at 2 C with a capacity decay rate of 0.07%.Even under a sulfur loading of 4.8 mg cm^(-2),areal capacity still can be up to 5.6 m A h cm^(-2).In-situ Raman tests explicitly illustrate the effectiveness of VSe_(2)/V_(2)C-CNTs modifier in restricting Li PSs *** with density functional theory calculations,the underlying mechanism of VSe_(2)/V_(2)C heterostructure for remedying Li PSs shuttling and conversion kinetics was *** strategy of constructing VSe_(2)/V_(2)C heterocatalyst in this work proposes a universal protocol to design metal selenide-based separator modifier for Li-S ***,it opens an efficient avenue for the separator engineering of Li-S batteries.

关键词： Li-S battery Shuttle effect Separator modifier VSe_(2)/V_(2)C heterostructure Built-in electric field

Revealing the role of calcium ion intercalation of hydrated vanadium oxides for aqueous zinc-ion batteries

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Journal of Energy Chemistry 2024年第8期95卷 9-19,I0001页

作者： Tao Zhou Xuan Du Guo Gao Key laboratory for Thin Film and micro Fabrication of the Ministry of Education School of Sensing Science and EngineeringSchool of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

Exploring suitable high-capacity V_(2)O_(5)-based cathode materials is essential for the rapid advancement of aqueous zinc ion batteries(ZIBs).However,the typical problem of slow Zn^(2+)diffusion kinetics has severely limited the feasibility of such *** this work,unique hydrated vanadates(CaVO,BaVO)were obtained by intercalation of Ca^(2+)or Ba^(2+)into hydrated vanadium *** the CaVO//Zn and BaVO//Zn batteries systems,the former delivered up to a 489.8 mAh g^(-1)discharge specific capacity at 0.1 A g^(-1).Moreover,the remarkable energy density of 370.07 Wh kg^(-1)and favorable cycling stability yard outperform BaVO,pure V_(2)O_(5),and many reported cathodes of similar ionic intercalation *** addition,pseudocapacitance analysis,galvanostatic intermittent titration(GITT)tests,and Trasatti analysis revealed the high capacitance contribution and Zn^(2+)diffusion coefficient of CaVO,while an in-depth investigation based on EIS elucidated the reasons for the better electrochemical performance of ***,ex-situ XRD,XPS,and TEM tests further demonstrated the Zn^(2+)insertion/extraction and Zn-storage mechanism that occurred during the cycle in the CaVO//Zn battery *** work provides new insights into the intercalation of similar divalent cations in vanadium oxides and offers new solutions for designing cathodes for high-capacity aqueous ZIBs.

关键词： Aqueous zinc ion batteries Cathode materials Ion pre-intercalation Vanadium oxides Energy storage mechanism

SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-low Power Loss and Improved Short-Circuit Capability

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Chinese Journal of electronics 2024年第5期33卷 1127-1136页

作者： Jinping ZHANG Qinglin WU Zixun CHEN Hua ZOU Bo ZHANG State Key laboratory of electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A silicon carbide（SiC） double trench metal-oxide-semiconductor field effect transistor（DTMOS） with split gate（SG） and integrated Schottky barrier diode（SBD） is proposed for the first *** proposed device features two enhanced deep trenches in the surface,in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench（DST）.Combined with shielding effect provided by the P+shield layer under the DST and integrated SBD,the proposed structure not only reduces the reverse transfer capacitance(Crss) and gate-drain charge(Qgd) but also restrains the saturation drain current(Id,sat) and improves the diode performance of the *** analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode,the turn-on loss(Eon) and turn-off loss(Eoff) for the proposed device are reduced by 56.4%/70.4% and 56.6%/69.9%,***,the Id,satat the Vgsof 18 V for the proposed device is reduced by 74.4% and the short-circuit withstand time(tSC) is improved by about 7.5 *** a result,an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.

关键词： Performance evaluation Schottky diodes Time-frequency analysis Silicon carbide Simulation Schottky barriers Low power electronics Metal-oxide-semiconductor field effect transistor (MOSFET) Specific on resistance Reverse transfer capacitance High frequency figure of merit Forward conduction voltage drop Turn-on loss Turn-off loss Saturated drain current Short-circuit withstand time

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Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-Temperature 1T-PrN_(2) Monolayer

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Chinese Physics Letters 2024年第5期41卷 77-84页

作者：吴绪才李树宗司君山黄博张卫兵 Hunan Provincial Key laboratory of Flexible electronic Materials Genome Engineering School of Physics and Electronic SciencesChangsha University of Science and TechnologyChangsha 410114China

Quantum anomalous Hall(QAH) insulators have highly potential applications in spintronic device. However,available candidates with tunable Chern numbers and high working temperature are quite rare. Here, we predict a 1T-PrN_(2) monolayer as a stable QAH insulator with high magnetic transition temperature of above 600 K and tunable high Chern numbers of C = ±3 from first-principles calculations. Without spin-orbit coupling(SOC),the 1T-PrN_(2) monolayer is predicted to be a p-state Dirac half metal with high Fermi velocity. Rich topological phases depending on magnetization directions can be found when the SOC is considered. The QAH effect with periodical changes of Chern number(±1) can be produced when the magnetic moment breaks all twofold rotational symmetries in the xy plane. The critical state can be identified as Weyl half semimetals. When the magnetization direction is parallel to the z-axis, the system exhibits high Chern number QAH effect with C = ±*** work provides a new material for exploring novel QAH effect and developing high-performance topological devices.

关键词： magnetization topological monolayer

Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

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Chinese Journal of electronics 2024年第2期33卷 326-335页

作者： Jinping ZHANG Xiaofeng LI Rongrong ZHU Kang WANG Bo ZHANG State Key laboratory of electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Institute of electronic and Information Engineering of UESTC in Guangdong

A novel trench insulated gate bipolar transistor（TIGBT） with a shallow emitter trench controlled P-type dummy region（STCP-TIGBT） is *** with the conventional TIGBT with floating P-type dummy region（CFP-TIGBT） and TIGBT with floating P-type dummy region and normally on hole path（HFPTIGBT）,the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge(Qgc).Therefore,both the power loss and electromagnetic interference（EMI） noise are significantly *** results show that the Qgcof the proposed device is only 501 nC/cm2,which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT,*** same on-state voltage drop(Vceon) of 1.02 V,the turn-off loss(Eoff) of the proposed device is 13.49 mJ/cm2,which is 64.6%and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT,***,the reverse recovery dVak/dt of the freewheeling diode at same turn-on loss(Eon) of 31.8 mJ/cm2for the proposed STCP-TIGBT is only 2.15 kV/μs,which is reduced by 91.3% and 57.2% when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFPTIGBT,*** reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.

关键词： Insulated gate bipolar transistors Electrodes Annealing Simulation Electromagnetic interference Noise Voltage

Dynamic response of a thermal transistor to time-varying signals

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Chinese Physics B 2024年第5期33卷 13-19页

作者：阮琴丽刘文君王雷 Department of Physics Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devicesand Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education)Renmin University of ChinaBeijing 100872China

Thermal transistor,the thermal analog of an electronic transistor,is one of the most important thermal devices for microscopic-scale heat *** is a three-terminal device,and the heat current flowing through two terminals can be largely controlled by the temperature of the third *** response plays an important role in the application of electric devices and also thermal devices,which represents the devices’ability to treat fast varying *** this paper,we systematically study two typical dynamic responses of a thermal transistor,i.e.,the response to a step-function input(a switching process)and the response to a square-wave *** role of the length L of the control segment is carefully *** is revealed that when L is increased,the performance of the thermal transistor worsens *** the relaxation time for the former process and the cutoff frequency for the latter one follow the power-law dependence on L quite well,which agrees with our analytical ***,the detailed power exponents deviate from the expected values *** implies the violation of the conventional assumptions that we adopt.

关键词： phonon phononics thermal transistor dynamic response heat conduction

Solar manipulations of perpendicular magnetic anisotropy for flexible spintronics

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Frontiers of physics 2024年第4期19卷 73-79页

作者： Zhexi He Yifan Zhao Yujing Du Meng Zhao Yuxuan Jiang Ming Liu Ziyao Zhou State Key laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringThe International Joint Laboratory for Micro/Nano Manufacturing and Measurement TechnologyXi’an Jiaotong UniversityXi’an 710049China School of Materials Science&Engineering Changzhou UniversityChangzhou 213164China

Flexible electronics/spintronics attracts researchers’attention for their application potential abroad in wearable devices,healthcare,and other *** devices’performance(speed,energy consumption)is highly dependent on manipulating information bits(spin-orientation in flexible spintronics).In this work,we established an organic photovoltaic(OPV)/ZnO/Pt/Co/Pt heterostructure on flexible PET substrates with perpendicular magnetic anisotropy(PMA).Under sunlight illumination,the photoelectrons generated from the OPV layer transfer into the PMA heterostructure,then they reduce the PMA strength by enhancing the interfacial Rashba field *** coercive field(Hc)reduces from 800 Oe to 500 Oe at its maximum,and the magnetization can be switched up and down *** stability of sunlight control of magnetization reversal under various bending conditions is also tested for flexible spintronic ***,the voltage output of sunlight-driven PMA is achieved in our prototype device,exhibiting an excellent angular dependence and opening a door towards solar-driven flexible spintronics with much lower energy consumption.

关键词： interfacial magnetoelectric coupling perpendicular magnetic anisotropy deterministic magnetization reversal photovoltaic control of magnetism

Twin-SSB signal reception without optical SSB filters based on self-coherent detection

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Optoelectronics Letters 2024年第10期20卷 584-591页

作者： ZHANG Xiaoling Key laboratory of Aviation electronic Information Systems Southwest China Institute of Electronic Technology

Dater center interconnection has stimulated the development of short-reach optical communication transmission. To increase the capacity of the single sideband(SSB) system with direct-detection(DD), the twin-SSB system can double the system capacity without an extra optical modulator. Recently, the Stokes vector receiver(SVR) bridges the coherent detection and DD. A carrier can be sent along with the signal so that the SVR can utilize the reference carrier to conduct self-coherent detection and realize a linear complex optical detection, which is similar to the coherent receiver. In this paper, we propose a twin-SSB reception without optical SSB filters based on self-coherent detection. The proposed scheme greatly reduces the implementation complexity and has higher spectral efficiency(SE) compared with the traditional twin-SSB signal detection where two narrow-band optical filters and guard band are used for SSB signal extracting and inter crosstalk suppression. Meanwhile, the proposed twin-SSB signal detection with self-coherent detection also helps to relax the receiver digital signal processing(DSP), since the self-coherent detection reduces the inter crosstalk between the twin-SSB. The twin-SSB reception with self-coherent detection scheme makes it suitable for future high-speed short and medium-reach applications, such as the data center interconnect and metro area network.

关键词： A

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