检索结果-南通市图书馆

Two-dimensional lithiophilic YF_(δ) enabled lithium dendrite removal for quasi-solid-state lithium batteries

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materiomics 2021年第2期7卷 355-365页

作者： Xiao Chen Jian Xie Yunhao Lu Xinbing Zhao Tiejun Zhu state key laboratory of silicon materials School of Materials Science and EngineeringZhejiang UniversityHangzhou310027China key laboratory of Advanced materials and Applications for Batteries of Zhejiang Province Hangzhou310027China department of physics Zhejiang UniversityHangzhou310027China

Lithium metal batteries are regarded as promising alternatives to lithium ion batteries due to their high specific ***,lithium dendrite growth during cycling causes safety problem and rapid capacity ***,we report a composite Li anode composed(LYF)of metallic Li and trace amounts(1 e2 wt%)of two-dimensional YF_(δ).The lithiophilic nature of YF_(δ) enables its homogeneous dispersion in metallic *** LYF electrode exhibits lower resistance,higher chemical and mechanical stability,and longer cycle life compared to bare Li electrode due to uniform Li stripping and plating with YF_(δ) incorporation,which was confirmed by in-situ optical microscope observation.X-ray photoelectron spectroscopy reveals that LiF can in-situ form on the LYF electrode with reactions between Li and YF_(δ) during *** spontaneous reactions are clarified by density functional theory calculations.A quasisolid-state cell with LYF anode,LiFePO_(4) cathode and cathode-supported solid electrolyte layer has been constructed with a soft interface constructed between Li anode and solid electrolyte by in-situ thermal *** cell shows a high initial discharge capacity of 147 mAh g1 at 0.5℃ at 60℃ and sustains a stable cycling over 50 cycles with the in-situ formed LiF-rich layer and soft interface.

关键词： Two-dimensional lithiophilic YF_(δ) Lithium anode Quasi-solid-state battery Lithium fluoride Soft interface

Coexistence of superconductivity and antiferromagentic order in Er_(2)O_(2)Bi with anti-ThCr_(2)Si_(2) structure

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Frontiers of physics 2021年第6期16卷 133-141页

作者： Lei Qiao Ning-hua Wu Tianhao Li Siqi Wu Zhuyi Zhang Miaocong Li Jiang Ma Baijiang Lv Yupeng Li Chenchao Xu Qian Tao Chao Cao Guang-Han Cao Zhu-An Xu Zhejiang Province key laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310027China key laboratory of Neutron physics and Institute of Nuclear physics and Chemistry China Academy of Engineering PhysicsMianyang 621999China department of physics Hangzhou Normal UniversityHangzhou 310036China state key laboratory of silicon materials Zhejiang UniversityHangzhou 310027China

We investigated the coexistence of superconductivity and antiferromagnetic order in the compound Er_(2)O_(2)Bi with anti-ThCr_(2)Si_(2)-type structure through resistivity,magnetization,specific heat measurements and first-principle *** superconducting transition temperature Tc of 1.23 K and antiferromagnetic transition temperature TN of 3 K are observed in the sample with the best nominal *** superconducting upper critical field H_(c2)(0)and electron-phonon coupling constantλe−ph in Er_(2)O_(2)Bi are similar to those in the previously reported non-magnetic superconductor Y_(2)O_(2)Bi with the same structure,indicating that the superconductivity in Er_(2)O_(2)Bi may have the same origin as in Y_(2)O_(2)*** first-principle calculations of Er_(2)O_(2)Bi show that the Fermi surface is mainly composed of the Bi 6p orbitals both in the paramagnetic and antiferromagnetic state,implying minor effect of the 4f electrons on the Fermi ***,upon increasing the oxygen incorporation in Er_(2)O_(x)Bi,Tc increases from 1 to 1.23 K and TN decreases slightly from 3 K to 2.96 K,revealing that superconductivity and antiferromagnetic order may compete with each *** Hall effect measurements indicate that hole-type carrier density indeed increases with increasing oxygen content,which may account for the variations of Tc and TN with different oxygen content.

关键词： superconductivity Kondo lattice magnetic correlation phase diagram

Back-side stress to ease p-MOSFET degradation on e-MRAM chips

在线全文

学校读者我要写书评

暂无评论

Chinese physics B 2024年第12期33卷 482-486页

作者： Zhi-Meng Yu Xiao-Lei Yang Xiao-Nan Zhao Yan-Jie Li Shi-Kun He Ye-Wu Wang department of physics Zhejiang Province Key Laboratory of Quantum Technology and Device&State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Zhejiang Hikstor Technology Co. Ltd.Hangzhou 311300China

The magnetoresistive random access memory process makes a great contribution to threshold voltage deterioration of metal-oxide-silicon field-effect transistors,especially on p-type ***,a method was proposed to reduce the threshold voltage degradation by utilizing back-side *** the deposition of tensile material on the back side,positive charges generated by silicon-hydrogen bond breakage were inhibited,resulting in a potential reduction in threshold voltage shift by up to 20%.In addition,it was found that the method could only relieve silicon-hydrogen bond breakage physically,thus failing to provide a complete ***,it holds significant potential for applications where additional thermal budget is ***,it was also concluded that the method used in this work is irreversible,with its effect sustained to the chip package phase,and it ensures competitive reliability of the resulting magnetic tunnel junction devices.

关键词： back-side stress metal-oxide-silicon field-effect transistor(MOSFET) magnetoresistive random access memory(MRAM) threshold voltage

Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation

在线全文

学校读者我要写书评

暂无评论

Chinese physics Letters 1996年第11期13卷 878-880页

作者： YING Zhi-feng REN Zhong-min DU Yuan-cheng LI Fu-ming LIN Jing REN Yun-zhu ZONG Xiang-fu department of physics and State Key Lab oratory for Materials Modification by LaserIon and Electron beamsFudan UniversityShanghai 200433 Institute of materials Science Fudan UniversityShanghai 200433

In order to obtain high quality carbon nitride films,x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film:(a)laser-ablated amorphous carbon(a-C)films,(b)a-C films after a 1 keV nitrbgen ion beam bombardment.(c)carbon nitride(CN_(x))films synthesized by ablation assisted with ion beam bombardment,(d)CN_(x) films after a 50eV nitrogen ion beam bombardment,and(e)CN_(x) films after a 1 keV nitrogen ion beam *** comparison among these films showed that the concurrent deposition of CN_(x) films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam *** the case of concurrent deposited CN_(x) films,a post-treatment by a nitrogen ion beam bombardment with an appropriate energy(possibly less than 1 keV)was proposed to improve the ratio of C-N binding structures in the deposited films.

关键词： beam films amorphous

Fabrication of titania thin film with composite nanostructure and its ability to photodegrade rhodamine B in water

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Frontiers of Chemical Science and Engineering 2008年第1期2卷 44-48页

作者： Gaojie ZHANG Jinming WU Shaoguang LIU Mi YAN department of materials Science and Engineering Zhejiang UniversityHangzhou 310027China state key lab of silicon materials Zhejiang UniversityHangzhou 310027China

A titania nanorod filmwas synthesized by direct oxidation of metallic Ti with hydrogen peroxide solution under a low *** nanoparticles were then filled into the gaps among the nanorods through an infiltration sol-gel procedure to form a composite titania film with an ordered nanostructure.X-ray diffraction spectra indicate that the composite film was a mixture of anatase and rutile while the titania film obtained by only using a sol-gel procedure was pure *** emission scanning electron microscopy observations show that titania nanoparticles were embedded into the titania nanorod *** spectra suggest the enhanced separation of electron and hole pairs for the obtained composite titania film over the corresponding titania nanorod *** composite titania film exhibited improved ability to photodegrade rhodamine B in water compared with the titania nanorod *** apparent photodegradation rate constant,fitting a pseudo-first-order,was 3 times of that obtained by the sol-gel derived titania film at the same *** improved photocata-lytic activity for the composite titania film could be attributed to the enhanced separation of electron and hole pairs due to the embedding of the titania nanoparticles within the titania nanorods.

关键词： titania composite catalyst film sol-gel nanorod photoluminescence spectra

Evolution of superconductivity and charge order in pressurized RbV_(3)Sb_(5)

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese physics B 2022年第1期31卷 24-30页

作者： Feng Du Shuaishuai Luo Rui Li Brenden R.Ortiz Ye Chen Stephen D.Wilson Yu Song Huiqiu Yuan Center for Correlated Matter and department of physics Zhejiang UniversityHangzhou 310058China Zhejiang Province key laboratory of Quantum Technology and Device Department of PhysicsZhejiang UniversityHangzhou 310058China materials department and California Nanosystems Institute University of California Santa BarbaraSanta BarbaraCA 93106United States state key laboratory of silicon materials Zhejiang UniversityHangzhou 310058China

The kagome metals AV_(3)Sb_(5)(A=K,Rb,Cs)under ambient pressure exhibit an unusual charge order,from which superconductivity *** this work,by applying hydrostatic pressure using a liquid pressure medium and carrying out electrical resistance measurements for RbV_(3)Sb_(5),we find that the charge order becomes suppressed under a modest pressure pc(1.4 GPastate resistance anomalies are found to be associated with the second superconducting dome,similar to KV_(3)Sb_(5).Our findings point to qualitatively similar temperature-pressure phase diagrams in KV_(3)Sb_(5) and RbV_(3)Sb_(5),{and suggest a close link}between the second superconducting dome and the high-pressure resistance anomalies.

关键词： kagome superconductor temperature–pressure phase diagram superconducting dome hydrostatic pressure

Efficient 1.3-μm electroluminescence from high concentration boron-diffused silicon p^+-n junctions

在线全文

学校读者我要写书评

暂无评论

Chinese Optics Letters 2009年第4期7卷 274-276页

作者：陈挺冉广照尤力平赵华波秦国刚 state key lab for Mesoscopic physics and School of physics Peking University

Etectroluminescence peaking at 1.3 μm is observed from high concentration boron-diffused silicon p^＋-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 μm, but disappears at room temperature. The 1.3-μm band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.

关键词： Boron Electroluminescence Light emission

Structural and Magnetic Properties of Co2MnSi Thin Film with a Low Damping Constant

在线全文

学校读者我要写书评

暂无评论

Chinese physics Letters 2015年第5期32卷 134-137页

作者：乔士柱张洁秦羽丰郝润润钟海朱大鹏康韵康仕寿于淑云韩广兵颜世申梅良模 School of physics and state key lab of Crystal materials Shandong Uxdversity Jinan 250100 department of Applied physics School of Information Science and Engineering Shandong Agricultural University Tai ' an 271018

Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.

关键词： Structural and Magnetic Properties of Co2MnSi Thin Film with a Low Damping Constant

Strong Coupled Magnetic and Electric Ordering in Monolayer of Metal Thio(seleno)phosphates

在线全文

学校读者我要写书评

暂无评论

Chinese physics Letters 2021年第7期38卷 145-150页

作者： Chenqiang Hua Hua Bai Yi Zheng Zhu-An Xu Shengyuan A.Yang Yunhao Lu Su-Huai Wei Zhejiang Province key laboratory of Quantum Technology and Device State Key Laboratory of Silicon MaterialsDepartment of PhysicsZhejiang UniversityHangzhou 310027China Research laboratory for Quantum materials Singapore University of Technology and DesignSingapore 487372Singapore Beijing Computational Science Research Center Beijing 100193China

The coupling between electric ordering and magnetic ordering in two-dimensional(2D)materials is important for both fundamental research of 2D multiferroics and future development of magnetism-based information storage and ***,we introduce a scheme for realizing a magnetic phase transition through the transition of electric *** take CuMoP_(2)S_(6) monolayer as an example,which is a member of the large 2D transition-metal chalcogen-phosphates *** on first-principles calculations,we find that it is a multiferroic with unprecedented characters,namely,it exhibits two different phases:an antiferroelectric-antiferromagnetic phase and a ferroelectric-ferromagnetic phase,in which the electric and magnetic orderings are strongly ***,the electric polarization is out-of-plane,so the magnetism can be readily switched by using the gate electric *** finding reveals a series of 2D multiferroics with special magnetoelectric coupling,which hold great promise for experimental realization and practical applications.

关键词： ferroelectric coupling transition