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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing key lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

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Negative enthalpy alloys and local chemical ordering:a concept and route leading to synergy of strength and ductility

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National Science Review 2024年第4期11卷 172-184页

作者： Zibing An Tao Yang Caijuan Shi Shengcheng Mao Lihua Wang Ang Li Wei Li Xianmeng Xue Ming Sun Yifan Bai Yapeng He Fuzeng Ren Zhouguang Lu Ming Yan Yang Ren Chain-Tsuan Liu Ze Zhang Xiaodong Han Beijing key lab of Microstructure and Property of Advanced materials College of Materials Science &Engineering Beijing University of Technology department of materials Science and Engineering City University of Hong Kong key laboratory of Partial Acceleration physics& Technology Institute of High Energy PhysicsChinese Academy of Sciences department of materials Science &Engineering Southern University of Science and Technology department of physics City University of Hong Kong state key laboratory of silicon materials Department of Materials Science and Engineering Zhejiang University

Solid solutions are ubiquitous in metals and alloys. Local chemical ordering(LCO) is a fundamental sub-nano/nanoscale process that occurs in many solid solutions and can be used as a microstructure to optimize strength and ductility. However, the formation of LCO has not been fully elucidated, let alone how to provide efficient routes for designing LCO to achieve synergistic effects on both superb strength and ductility. Herein, we propose the formation and control of LCO in negative enthalpy alloys. With engineering negative enthalpy in solid solutions, genetic LCO components are formed in negative enthalpy refractory high-entropy alloys(RHEAs). In contrast to conventional ‘trial-and-error' approaches, the control of LCO by using engineering negative enthalpy in RHEAs is instructive and results in superior strength(1160 MPa) and uniform ductility(24.5%) under tension at ambient temperature, which are among the best reported so far. LCO can promote dislocation cross-slip, enhancing the interaction between dislocations and their accumulation at large tensile strains; sustainable strain hardening can thereby be attained to ensure high ductility of the alloy. This work paves the way for new research fields on negative enthalpy solid solutions and alloys for the synergy of strength and ductility as well as new functions.

关键词： negative enthalpy alloys local chemical ordering strength ductility dislocation

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Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl_(3)

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Chinese physics Letters 2024年第4期41卷 126-131页

作者：郭的坪王聪王侣锦陆赟豪吴骅张妍宁季威 Beijing key laboratory of Optoelectronic Functional materials&Micro-Nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China key laboratory of Quantum state Construction and Manipulation(Ministry of Education) Renmin University of ChinaBeijing 100872China Zhejiang Province key laboratory of Quantum Technology and Device State Key Laboratory of Silicon MaterialsDepartment of PhysicsZhejiang UniversityHangzhou 310027China laboratory for Computational Physical Sciences(MOE) State Key Laboratory of Surface Physicsand Department of PhysicsFudan UniversityShanghai 200433China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China

Two-dimensional(2D)van der Waals magnetic materials have promising and versatile electronic and magnetic properties in the 2D limit,indicating a considerable potential to advance spintronic *** predictions thus far have not ascertained whether monolayer VCl_(3) is a ferromagnetic(FM)or anti-FM monolayer;this also remains to be experimentally *** theoretically investigate the influence of potential factors,including C_(3) symmetry breaking,orbital ordering,epitaxial strain,and charge doping,on the magnetic ground *** first-principles calculations,we predict a collinear type-Ⅲ FM ground state in monolayer VCl_(3) with a broken C_(3) symmetry,wherein only the former two of three t_(2g)orbitals(a_(1g),e_(g2)^(π)and e_(g1)^(π))are *** atomic layer thickness and bond angles of monolayer VCl_(3) undergo abrupt changes driven by an orbital ordering switch,resulting in concomitant structural and magnetic phase *** doping to the underlying Cl atoms of monolayer VCl_(3) without C_(3) symmetry simultaneously induces in-and out-of-plane *** can achieve a multiferroic phase transition if combined with the discovered adjustments of magnetic ground state and polarization magnitude under *** establishment of an orbital-ordering driven regulatory mechanism can facilitate deeper exploration and comprehension of magnetic properties of strongly correlated systems in monolayer VCl_(3).

关键词： monolayer symmetry orbital

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Synthesis,chemical bonding and reactivity of new medium-sized polyarsenides

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Chinese Chemical Letters 2024年第7期35卷 497-501页

作者： Xu-Hui Yue Xiang-Wen Zhang Hui-Min He Lei Qiao Zhong-Ming Sun state key laboratory of Element-Organic Chemistry Tianjin Key Lab for Institution Rare Earth Materials and ApplicationsSchool of Materials Science and EngineeringNankai UniversityTianjin 300350China department of physics Institute of Computational and Applied PhysicsTaiyuan Normal UniversityJinzhong 030619China

Gaining an understanding of the growth mechanism from single atoms to clusters and bulk materials continues to present a ***,it is important to explore the evolving trends of clusters in the structure and properties during the size *** this work,we report the synthesis and characterization of two medium-sized chain-like polyarsenic anions.[As_(21)]^(3-)represents a trimeric example of polyarsenic anion assembled through oxidative coupling of As_(7)^(3-)*** anion As_(18)^(4-)included in[As_(18)MO_(2)(CO)_(8)]^(4-)is regarded as formed by two realgar-type As_(8)subunits connected by a dinuclear AsAs *** As_(18)cluster was previously predicted by theory,and this is the first time successfully synthesized using wet chemistry ***,small-sized polyarsenides As_(2)^(2-)and As_(10)^(2-)were found in compound[K(18-crown-6)]_(3)[As_(10)]_(0.5)[As_(4){Mo(CO)_(3)}_(2)]_(0.5)·*** these,the former exhibits coordination with metal ***-crystal X-ray diffraction combined with quantum chemical calculations revealed the formation of double bonded As_(2)^(2-)stabilized by metal carbonyl *** work demonstrates a novel synthetic approach for the preparation of new polyarsenides and highlights their intriguing bonding characteristics,laying the foundation for the synthesis of such compounds and paving the way for their potential applications.

关键词： Polyarsenide Zintl anions Chain-like cluster DFT calculations AdNDP

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Highly responsive broadband Si-based MoSphototransistor on high-k dielectric

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Science China(Information Sciences) 2024年

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG Beijing key lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology ZJU-Hangzhou Global Scientific and Technological Innovation Centre College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2·V-1·s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5×108A·W-1, 0.72×106, and 6.20×1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

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Superconductivity in kagome metal ThRu3Si2

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Chinese physics B 2024年第5期33卷 50-55页

作者：刘艺厉静杨武璋卢佳依曹博雅李华旬柴万力武思祺李佰卓孙云蕾焦文鹤王操许晓峰任之曹光旱 School of physics Zhejiang University department of Applied physics Zhejiang University of Technology School of Science Westlake Institute for Advanced Study Westlake University department of physics Shandong University of Technology School of Information and Electrical Engineering Zhejiang University City College Interdisciplinary Center for Quantum Information and State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Collaborative Innovation Centre of Advanced Microstructures Nanjing University

We report the physical properties of ThRu3Si2featured with distorted Ru kagome lattice. The combined experiments of resistivity, magnetization and specific heat reveal bulk superconductivity with Tc= 3.8 K. The specific heat jump and calculated electron–phonon coupling indicate a moderate coupled BCS superconductor. In comparison with LaRu3Si2,the calculated electronic structure in ThRu3Si2shows an electron-doping effect with electron filling lifted from 100 meV below flat bands to 300 meV above it. This explains the lower superconducting transition temperature and weaker electron correlations observed in ThRu3Si2. Our work suggests the Tc and electronic correlations in the kagome superconductor could have an intimate connection with the flat bands.

关键词： superconductivity kagome lattice flat band

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Highly ordered crystallization of α-FAPbl_(3) films via homogeneous seeds for efficient perovskite solar cells

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Journal of Energy Chemistry 2024年第7期94卷 625-634页

作者： Guohui Luo Linfeng Zhang Liyun Guo Xiuhong Geng Penghui Ren Yi Zhang Haihua Hu Xiaoping Wu Lingbo Xu Ping Lin Haiyan He Xuegong Yu Peng Wang Can Cui key laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018ZhejiangChina Zhejiang Provincial key laboratory of Fiber materials and Manufacturing Technology Zhejiang Sci-Tech UniversityHangzhou 310018ZhejiangChina Hangzhou City University Hangzhou 310015ZhejiangChina key laboratory of Solar Energy Utilization and Energy Saving Technology of Zhejiang Province Zhejiang Baima Lake Laboratory Co.Ltd.Hangzhou 310012ZhejiangChina state key laboratory of silicon materials and School of materials Science and Engineering Zhejiang UniversityHangzhou 310027ZhejiangChina

Formamidine lead triiodide(FAPbI_(3))perovskites have become the most promising photovoltaic materials for perovskite solar cells with record power conversion efficiency(PCE).However,random nucleation,phase transition,and lattice defects are still the key challenges limiting the quality of FAPbI_(3) *** studies show that the introduction or adding of seeds in the precursor is effective to promote the nucleation and crystallization of perovskite ***,the seed-assisted approach focuses on heterogeneous seeds or hetero-composites,which inevitably induce a lattice-mismatch,the genera-tion of strain or defects,and the phase segregation in the perovskite ***,we first demonstrate that high-quality perovskite films are controllably prepared using α-and δ-phases mixed FAPbI_(3) micro-crystal as the homogeneous seeds with the one-step antisolvent *** partially dissolved seeds with suitable sizes improve the crystallinity of the perovskite flm with preferable orientation,improved carrier lifetime,and increased carrier *** importantly,the α-phase-containing seeds promote the formation of α-phase FAPbI_(3) films,leading to the reduction of residual lattice strain and the suppres-sion of I-ion ***,the adding of dimethyl 2,6-pyridine dicarboxylate(DPD)into the pre-cursor further suppresses the generation of defects,contributing to the PCE of devices prepared in air ambient being significantly improved to 23.75%,among the highest PCEs for fully air-processed FAPbI_(3) solar *** unpackaged target devices possess a high stability,maintaining 80%of the initial PCE under simulated solar illumination exceeding 800 h.

关键词： Perovskite solar cells FAPbI_(3) Homogeneous seeds Strain Phase stability

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Ohmic-contact ballistic 2D In Se transistors:promising candidates for more Moore electronics

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Science China(Information Sciences) 2024年第3期67卷 311-312页

作者： Hong LI Qiuhui LI Jing LU College of Mechanical and Material Engineering North China University of Technology state key laboratory for Mesoscopic physics and department of physics Collaborative Innovation Center of Quantum Matter Beijing key laboratory for Magnetoelectric materials and Devices Peking University Yangtze Delta Institute of Optoelectronics key laboratory for the physics and Chemistry of Nanodevices Peking University

The scaling of silicon-based metal-oxide-semiconductor fieldeffect transistors(MOSFETs) approaches its physical limits at a gate length(LG) of 12 nm and supply voltage(VDD) of 0.6 V according to the International Road...

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Electronic Correlation and Pseudogap-Like Behavior of High-Temperature Superconductor La_(3)Ni_(2)O_(7)

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Chinese physics Letters 2024年第8期41卷 82-93页

作者： Yidian Li Xian Du Yantao Cao Cuiying Pei Mingxin Zhang Wenxuan Zhao Kaiyi Zhai Runzhe Xu Zhongkai Liu Zhiwei Li Jinkui Zhao Gang Li Yanpeng Qi Hanjie Guo Yulin Chen Lexian Yang state key laboratory of Low Dimensional Quantum physics Department of PhysicsTsinghua UniversityBeijing 100084China key lab for Magnetism and Magnetic materials of the Ministry of Education Lanzhou UniversityLanzhou 730000China Songshan Lake materials laboratory Dongguan 523808China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China ShanghaiTech laboratory for Topological physics Shanghai 200031China Shanghai key laboratory of High-Resolution Electron Microscopy ShanghaiTech UniversityShanghai 201210China department of physics Clarendon LaboratoryUniversity of OxfordParks RoadOxford OX13PUUK Frontier Science Center for Quantum Information Beijing 100084China

High-temperature superconductivity(HTSC)remains one of the most challenging and fascinating mysteries in condensed matter ***,superconductivity with transition temperature exceeding liquid-nitrogen temperature is discovered in La_(3)Ni_(2)O_(7) at high pressure,which provides a new platform to explore the unconventional *** this work,using high-resolution angle-resolved photoemission spectroscopy and ab initio calculation,we systematically investigate the electronic structures of La_(3)Ni_(2)O_(7) at ambient *** experiments are in nice agreement with ab initio calculations after considering an orbital-dependent band renormalization *** strong electron correlation effect pushes a flat band of d_(z^(2))𝑧2 orbital component below the Fermi level(E_(F)),which is predicted to locate right at E_(F) under high ***,the d_(x^(2)−y^(2)) band shows pseudogap-like behavior with suppressed spectral weight and diminished quasiparticle peak near E_(F).Our findings provide important insights into the electronic structure of La_(3)Ni_(2)O_(7),which will shed light on understanding of the unconventional superconductivity in nickelates.

关键词： effect. superconductivity orbital

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications state key laboratory of Infrared physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of physics and key lab of Quantum materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory state key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory department of Applied physics The Hong Kong Polytechnic University key laboratory for Micro-Nano physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University state key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic materials and Devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum state Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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