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Two-Dimensional Electron Gas in MoSi_(2)N_(4)/VSi_(2)N_(4)Heterojunction by First Principles Calculation

Chinese physics Letters 2022年第12期39卷 57-64页

作者： Ruiling Gao Chao Liu Le Fang Bixia Yao Wei Wu Qiling Xiao Shunbo Hu Yu Liu Heng Gao Shixun Cao Guangsheng Song Xiangjian Meng Xiaoshuang Chen Wei Ren physics department State Key Laboratory of Advanced Special SteelMaterials Genome InstituteShanghai Key Laboratory of High Temperature SuperconductorsInternational Center of Quantum and Molecular StructuresShanghai UniversityShanghai 200444China key laboratory of Green Fabrication and Surface Technology of Advanced Metal materials(Ministry of Education) Anhui University of TechnologyMaanshan 243002China state key laboratory of Surface physics and department of physics Fudan UniversityShanghai 200433China state key laboratory of Infrared physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Van der Waals(vdW)layered two-dimensional(2D)materials,which may have high carrier mobility,valley polarization,excellent mechanical properties and air stability,have been widely investigated *** explore the possibility of producing a spin-polarized two-dimensional electron gas(2DEG)in the heterojunction composed of insulators MoSi_(2)N_(4)and VSi_(2)N_(4)by using first-principles *** to the charge transfer effect,the 2DEG at the interface of the MoSi_(2)N_(4)/VSi_(2)N_(4)heterojunction is ***,for different kinds of stacking of heterojunctions,lattice strain and electric fields can effectively tune the electronic structures and lead to metal-to-semiconductor *** compressive strain or electric field parallel to c axis,the 2DEG disappears and band gap opening *** the contrary,interlayer electron transfer enforces the system to become metallic under the condition of tensile strain or electric field anti-parallel to c *** changes are mainly attributed to electronic redistribution and orbitals’*** addition,we reveal that MoSi_(2)N_(4)/VSi_(2)N_(4)lateral heterojunctions of armchair and zigzag edges exhibit different electronic properties,such as a large band gap semiconductor and a metallic *** findings provide insights into electronic band engineering of MoSi_(2)N_(4)/VSi_(2)N_(4)heterojunctions and pave the way for future spintronics applications.

关键词： heterojunction polarization metallic

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Forging Inspired Processing of Sodium-Fluorinated Graphene Composite as Dendrite-Free Anode for Long-Life Na–CO_(2) Cells

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Energy & Environmental materials 2022年第2期5卷 572-581页

作者： Yangjun Mao Xiao Chen Hao Cheng Yunhao Lu Jian Xie Tao Zhang Jian Tu Xiongwen Xu Tiejun Zhu Xinbing Zhao state key laboratory of silicon materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China department of physics Zhejiang UniversityHangzhou 310027China state key lab of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China LI-FUN Technology Corporation Limited Zhuzhou 412000China

Na–CO_(2) batteries recently are emerging as promising energy-storage devices due to the abundance of Na in the earth’s crust and the clean utilization of greenhouse gas CO_(2) .However,similar to metallic Li,metallic Na also suffers from a serious issue of dendrite growth upon repeated cycling,while a facile method to solve this issue is still *** this work,we report an effective,environmentally friendly method to inhibit Na dendrite growth by in situ constructing a stable,NaF-rich solid electrolyte interface(SEI)layer on metallic Na via adding a small amount(~3 wt%)of fluorinated graphene(FG)in bulk *** by the forging processing,a uniform Na/FG composite was obtained by melting and repetitive FG-adsorbing/hammering *** Na/FG–Na/FG half cell exhibits a low voltage hysteresis of 110–140 mV over 700 h at a current density up to 5 mA cm^(-2) with an areal capacity as high as 5 mAh cm^(-2).Na–CO_(2) full cell with the Na/FG anode is able to sustain a stable cycling of 391 cycles at a limited capacity of 1000 mAh g^(-1).Long cycle life of the cell can be attributed to the protecting effect of the in situ fabricated NaF-rich SEI layer on metallic *** experiments and density functional theory(DFT)calculations confirm the formation of the NaF-rich SEI *** inhibition effect of the NaF-rich SEI layer for Na dendrites is verified by in situ optical microscopy observations.

关键词： composite anode fluorinated graphene Na dendrite Na-CO_(2)battery NaFrich protecting layer

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Tuning the reaction path of CO_(2) electroreduction reaction on indium single-atom catalyst:Insights into the active sites

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Nano Research 2022年第5期15卷 4014-4022页

作者： Jiawei Zhang Gangming Zeng Lanlan Chen Wenchuan Lai Yuliang Yuan Yangfan Lu Chao Ma Wenhua Zhang Hongwen Huang College of materials Science and Engineering Advanced Catalytic Engineer Research Center of the Ministry of EducationHunan UniversityChangsha 410082China Hefei National laboratory for Physical Sciences at the Microscale Key Laboratory of Strongly-Coupled Quantum Matter Physics of Chinese Academy of SciencesDepartment of Chemical PhysicsUniversity of Science and Technology of ChinaHefei 230026China state key lab of silicon materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China

Modulating the local coordination structure of metal single-atom catalysts(SACs)is extensively employed to tune the catalytic activity,but rarely involved in regulating the reaction pathway which fundamentally determines the product ***,we report that the product selectivity of electrochemical CO_(2)reduction(CO_(2)RR)on the single-atom indium-NxC4-x(1≤x≤4)catalysts could be tuned from formate to CO by varying the carbon and nitrogen occupations in the first coordination ***,the optimal In SAC showed great promise for CO production with the maximum Faradic efficiency of 97%,greatly different from the reported In-based catalysts where the formate is the dominant *** experimental verifications and theoretical simulations reveal that the selectivity switch from formate to CO on In SACs originates from active sites shift from indium center to the indium-adjacent carbon atom,where the indium site favors formate formation and the indium-adjacent carbon site prefers the CO *** present work suggests the active sites in metal SACs may shift from the widely accepted metal center to surrounding carbon atoms,thereby offering a new implication to revisit the active sites for metal SACs.

关键词： CO_(2)reduction single atom catalysts coordination structure product selectivity active sites shift

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Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

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Chinese physics B 2014年第5期23卷 623-629页

作者：乔士柱康仕寿秦羽丰李强钟海康韵于淑云韩广兵颜世申梅良模 School of physics and state key lab of Crystal materials Shandong University department of Applied physics School of Information Science and EngineeringShandong Agricultural University

Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.

关键词： organic memory resistance switching copper phthalocyanine

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A silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

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Chinese physics Letters 2018年第3期35卷 71-74页

作者：白占斌刘翔凯连震张康康王广厚史夙飞皮孝东宋凤麒 National laboratory of Solid state Microstructures School of Physicsand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093 state key laboratory of silicon materials and School of materials Science and Engineering Zhejiang UniversityHangzhou 310027 department of Chemical and Biological Engineering Ftensselaer Polytechnic InstituteNY 12180USA

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.

关键词： QDs A silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

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Diverse nanomaterials synthesized by laser ablation of pure metals in liquids

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Science China(physics,Mechanics & Astronomy) 2022年第7期65卷 48-82页

作者： DongShi Zhang ZhuGuo Li ChangHao Liang Shanghai key laboratory of materials Laser Processing and Modification School of Materials Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240China state key lab of Metal Matrix Composites School of Materials Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240China key laboratory of materials physics and Anhui key laboratory of Nanomaterials and Nanotechnology Institute of Solid State PhysicsChinese Academy of SciencesHefei 230031China department of materials Science and Engineering University of Science and Technology of ChinaHefei 230026China

Diverse nanomaterials, in the forms of carbides, sulfides, oxides, metals, hydroxides, etc., have been synthesized by laser ablation in liquids(LAL) with metal targets as the dominant educts. Many advantages of LAL technique itself and its products have been revealed since 1983 when the first report about LAL was released. Different from traditional wet-chemical synthesis,one unique feature of LAL is its resultant extreme high-temperature and high-pressure local environment for the nucleation and growth of nanomaterials, despite being performed at room temperature. This extreme condition can induce the atomization and ionization of the target materials and liquid molecules to incur different chemical reactions. The laser, liquid, liquid additive, and target can significantly alter the local environment in a broad range. Thus, different phases and shapes of nanomaterials are producible even from the same target. Through directly comparing the products of LAL of 13 kinds of chosen representative metals synthesized under different conditions, this review presents and discusses current understandings, challenging issues, and perspectives related to the diversity of LAL-products, which is willing to promote a deeper investigation and discussion on a clear clarification of the chemical reactions and particle nucleation/growth processes.

关键词： nanomaterial synthesis laser ablation in liquid phase manipulation morphology diversity

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Electron transport in solution-grown TIPS-pentacene single crystals:Effects of gate dielectrics and polar impurities

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Chinese Chemical Letters 2016年第12期27卷 1781-1787页

作者： Zhuo-Ting Huang Guo-Biao Xue Jia-Ke Wu Shuang Liu Huan-Bin Li Yu-Hui Yang Feng Yan Paddy K.L.Chan Hong-Zheng Chen Han-Ying Li MOE key laboratory of Macromolecular Synthesis and Functionalization State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou 310027 China department of Applied physics and materials Research Centre The Hong Kong Polytechnic University Hong Kong China department of Mechanical Engineering The University of Hong Kong Hong Kong China

The n-channel behavior has been occasionally reported in the organic field-effect transistors （OFETs） that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis（triisopropyl-silylethynyl） pentacene （TIPS-pentacene）, a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis （benzocy- clobutene）（BCB） dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TlPS-pentacene single crystals on five polymer gate dielectrics including polystyrene （PS）, poly（methyl methacrylate）（PMMA）, poly（4-vinyl phenol）（PVP）, poly（vinyl alcohol）（PVA） and poly（vinylidene fluoride-trifluoroethylene-chlorofluoroethylene）（P（VDF-TrFE-CFE））. In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA （40 nm） and a bilayer dielectric of PMMA on P（VDF-TrFE-CFE）, while does not on PVP and thin PVA （2 nm）. The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups （in PVP and PVA） and reduced injection barrier by Na~ ions （as impurity in PVA）. The highest electron mobility of 0.48 cm2 V-1 s-1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.

关键词： TIPS-pentacene single crystal Electron transport Polymer dielectric Polar solvent Organic field-effect transistor

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Boost oxygen reduction reaction performance by tuning the active sites in Fe-N-P-C catalysts

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Journal of Energy Chemistry 2021年第4期30卷 572-579页

作者： Yahao Li Ketao Zang Xuezhi Duan Jun Luo De Chen department of Chemical Engineering Norwegian University of Science and TechnologyN-7491 TrondheimNorway state key laboratory of silicon materials Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Provinceand Department of Materials Science and EngineeringZhejiang UniversityHangzhou 310027ZhejiangChina state key laboratory of Chemical Engineering East China University of Science and TechnologyShanghai 200237China Center for Electron Microscopy and Tianjin key lab of Advanced Functional Porous materials Institute for New Energy Materials&Low-Carbon TechnologiesSchool of MaterialsTianjin University of TechnologyTianjin 300384China

Cost-effective atomically dispersed Fe-N-P-C complex catalysts are promising to catalyze the oxygen reduction reaction(ORR)and replace Pt catalysts in fuel cells and metal-air ***,it remains a challenge to increase the number of atomically dispersed active sites on these *** we report a highly efficient impregnation-pyrolysis method to prepare effective ORR electrocatalysts with large amount of atomically dispersed Fe active sites from *** types of active catalyst centers were identified,namely atomically dispersed Fe sites and Fe_(x)P *** ORR rate of the atomically dispersed Fe sites is three orders of magnitude higher than it of Fe_(x)P particles.A linear correlation between the amount of the atomically dispersed Fe and the ORR activity was obtained,revealing the major contribution of the atomically dispersed Fe to the ORR *** number of atomically dispersed Fe increases as the Fe loading increased and reaching the maximum at 1.86 wt%Fe,resulting in the maximum ORR *** Fe-N-P-C complex catalyst was used as the cathode catalyst in a homemade Zn-air battery and good performance of an energy density of 771 Wh kgZn^(-1),a power density of 92.9 m W cm^(-2) at 137 m A cm^(-2) and an excellent durability were exhibited.

关键词： Oxygen reduction reaction Fe electrocatalyst Atomically dispersed active center Activity tuning Zn-air battery

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Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

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Nano Research 2014年第6期7卷 853-859页

作者： Wanglin Lu Haiyan Nan Jinhua Hong Yuming Chen Chen Zhu Zheng Liang Xiangyang Ma Zhenhua Ni Chuanhong Jin Ze Zhang state key laboratory of silicon materials Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province Department of Materials Science and Engineering Zhejiang University Hangzhou 310027 China department of physics Southeast University Nanjing 211189 China Graphene Research and Characterization Center Taizhou Sunano New Energy Co. Ltd. Taizhou 225300 China

There have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar＊ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy （AFM）. Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to Alg modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.

关键词： Mechanical cleavage monolayer phosphorene two-dimensionalsemiconductor plasma thinning optical contrast Raman spectroscopy

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Neutron Powder Diffraction Study on the Non-Superconducting Phases of ThFeAsN1-xOx（x=0.15,0.6）Iron Pnictide

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Chinese physics Letters 2019年第10期36卷 77-80页

作者： Hui-Can Mao Bing-Feng Hu Yuan-Hua Xia Xi-Ping Chen Cao Wang Zhi-Cheng Wang Guang-Han Cao Shi-Liang Li Hui-Qian Luo department of physics and Center for Advanced Quantum Studies Beijing Normal UniversityBeijing 100875 Beijing National laboratory for Condensed Matter physics Institute of PhysicsChinese Academy of SciencesBeijing 100190 key laboratory of Neutron physics Institute of Nuclear Physics and ChemistryChina Academy of Engineering PhysicsMianyang 621999 department of physics Shandong University of TechnologyZibo 255049 department of physics and state key lab of silicon materials Zhejiang UniversityHangzhou 310027 Collaborative Innovation Centre of Advanced Microstructures Nanjing 210093 Songshan Lake materials laboratory Dongguan 523808 School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190

We use neutron powder diffraction to study the non-superconducting phases of ThFeAsN1-xOx with x = 0.15,*** our previous results of the superconducting phase ThFeAsN with Tc = 30 K,no magnetic transition is observed by cooling down to 6 K,and possible oxygen occupancy at the nitrogen site is shown in the refinement[***.117(2017)57005].Here in the oxygen doped system ThFeAsN1-xOx,two superconducting regions(0≤x≤0.1 and 0.25≤x≤0.55)are identified by transport experiments[***.:***30(2018)255602].However,within the resolution of our neutron powder diffraction experiment,neither the intermediate doping x= 0.15 nor the heavily overdoped compound x = 0.6 shows any magnetic order from 300 K to 4 ***,while it shares the common phenomenon of two superconducting domes as most 1111-type iron-based superconductors,the magneticall.y ordered parent compound may not exist in this nitride family.

关键词： x=0 compound refinement

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