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Chinese Physics B 2024年第4期33卷 339-343页

作者：郑煜臻熊康林冯加贵杨辉 School of nano-Tech and nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou institute of nano-Tech and nano-Bionics Chinese Academy of SciencesSuzhou 215123China

A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase *** the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing *** guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the *** this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a *** results provide insightful and scientific guidance for device design and fabrication processes.

关键词： Josephson traveling wave parametric amplifier(JTWPA) harmonic balance method yields uniformity

A Design of 2-Stage Voltage Ramp-Up SRAM Physical Unclonable Function

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Chinese Journal of Electronics 2024年第2期33卷 371-379页

作者： Minte SONG Nan LIU Shuaiyang ZHOU Zhengguang WANG Zhanqiang RU Peng DING Wei HUANG Helun SONG School of nano-Tech and nano-Bionics University of Science and Technology of China Suzhou institute of nano-Tech and nano-Bionics Chinese Academy of Sciences

Silicon physical unclonable function（PUF） implemented by static random access memory（SRAM）exists inherent demerit of unstable cells due to noise of environment and circuits, which significantly restricts its reproducibility. In this paper, a 16T SRAM cell with reset-delay circuit and a 2-stage voltage ramp up is fabricated and reported. Compared to conventional SRAM structure, each PUF cell adds a pair of pull-up PMOS（P-channel metal oxide semiconductor） and pull-down NMOS（N-channel metal oxide semiconductor） controlled by reset and delayedreset signals respectively, resulting in two positive feedback stages with different amplification coefficients when the voltage is ramped up. PUF array consists of 4064 cells, 322 dummy cells and a group of 8 series-connected inverters with an area of 304 μm × 650 μm to match the digital post-processing module. PUF test chip was fabricated in HHGrace 110 nm platform with total area 1140 × 1140 μm2. The average HDintra（intra-chip Hamming distance, also bit error rate, BER） and HDinter（inter-chip Hamming distance） values of the 50 PUF chips in SOP16 package measured at normal point（1.5 V/25 ℃） were 1.92% and 49.85%, respectively.

关键词： Semiconductor device measurement Circuits Bit error rate Metals Aging Physical unclonable function Reproducibility of results

Flexible printed three dimensional(3D) integrated carbon nanotube complementary metal oxide semiconductor(CMOS) thin film transistors and circuits

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science China(Information sciences) 2024年第09期67卷 280-293页

作者： Zhaofeng CHEN Jiaqi LI Min LI Hongxuan GUO Jianwen ZHAO SEU-FEI nano-Pico Center Key Laboratory of MEMS of Ministry of Education Southeast University Printable Electronics Research Center Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences School of nano technology and nano Bionics University of Science and Technology of China

The threshold voltage modulation of carbon nanotube thin-film transistors（TFTs） and flexible three-dimensional（3D） integration circuits has become hot research topics for carbon-based electronics. In this paper, a doping-free gate electrode technology is introduced to significantly modulate the threshold voltage of polymer-sorted semiconducting single-walled carbon nanotube（sc-SWCNT） TFTs in combination with the highly effective gate-controlling ability of solid-state electrolyte thin films as the dielectrics. A systematic investigation was conducted on the impact of printed silver, evaporated silver, and evaporated aluminum（Al） gate electrodes on the threshold voltage of flexible printed bottom-gate and top-gate SWCNT TFTs. The results indicate that the SWCNT TFTs with Al gate electrodes exhibit enhancement-mode characteristics with excellent electrical properties, such as the negative threshold voltages（-0.6 V）, high Ion/Ioff（up to 10～6）, low subthreshold swing(61.4 mV · dec-1), and small hysteresis. It is attributed to either the formation of lower work function thin films（Al2O3） at the electrode/dielectric layer interfaces through the natural oxidation of the Al bottom-gate electrodes or the dipole reaction of the Al top-gate electrodes from X-ray photoelectron spectroscopy（XPS） and ultraviolet photoelectron spectroscopy（UPS） data. In addition, 3D complementary metal-oxide-semiconductor（CMOS） inverters with common gate electrodes were constructed using the resulting enhancement-mode P-type SWCNT TFTs and matched N-type SWCNT TFTs, which shows high voltage gain（34）, rail-to-rail output and high noise margins(80.04%, VDD=-1 V)as well good mechanical flexibility at low operation voltages. It demonstrates that SWCNT TFTs have great advantages for building large-scale 3D flexible integrated circuits.

关键词： three-dimensional CMOS circuits printing technology polymer-sorted semiconducting carbon nanotubes enhancement-mode thin-filmtransistors threshold voltage modulation

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

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science China(Information sciences) 2024年第6期67卷 461-462页

作者： Xiao WANG Zhi-Yu LIN Yuan-Hang SUN Long YUE Yu-Min ZHANG Jian-Feng WANG Ke XU School of nano-Tech and nano-Bionics University of Science and Technology of China Suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences Information Materials Research department Suzhou laboratory Suzhou nanowin science and technology Co. Ltd. Jiangsu institute of Advanced Semiconductors

In the process of homoepitaxy AlGaN/GaN heterojunction by metal-organic chemical vapor deposition (MOCVD) on free-standing substrates,Si impurities from the air and reaction chamber accumulate at the regrowth interfac...

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Vertical two-dimensional WS_(2)flakes grown on flexible CNT film for excellent electrochemical performance

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Rare Metals 2024年第1期43卷 164-174页

作者： Qian Gong Jing-Yun Zou Ming Ren Si-Qi Zhu Yu-Rong Zhou Li-Ming Zhao Jian Chen Yu-Long Wu Jiang-Tao Di Li-Xing Kang Qing-Wen Li School of nano-Tech and nano-Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Multifunctional nanomaterials and Smart Systems Division of Advanced MaterialsSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Jiangsu Key Laboratory of Micro and nano Heat Fluid Flow technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China

Soft electrochemical actuators that can generate mechanical motions in response to electrical stimuli can be used as artificial muscles in microscale *** electrode materials are the key component of the electrochemical actuator because they limit the ion diffusion and accumulation processes and thus affect the deformation in fast response-time and potential engineering ***-dimensional materials,such as one-dimensional(1D)CNT and two-dimensional(2D)vertically stood WS_(2),are great electrode due to their good electrochemical stability and high surface-to-volume ratios,but show limited performances when being used on their own in the actuators because of low reconstruction or low conductivity.A combination of 1D CNT and 2D WS_(2)could form a heterojunction with both high electrochemical activity and great mechanical ***,by depositing highly disordered graphene nanosheets(HDGNs)on CNT films and then WS_(2)on the formed low-dimensional nanocarbon film,a hybrid WS_(2)/HDGN/CNT film was synthesized through a multistep CVD *** grown WS_(2)nanosheets were achieved by taking advantage of HDGNs which limits CNTs ***,the volume expansion caused by the transition from WO_(3)to WS-2can force the vertical growth of WS_(2).This hybrid film shows excellent electrochemical properties,such as high specific capacitance and high rate *** actuators based on the WS_(2)/HDGN/CNT films show good actuating performance,including stability and reconfigurability.

关键词： CNT Graphene Vertically growth WS_(2) Electrochemical actuators

Design and Gait Planning of a Worm-inspired Metameric Robot for Pipe Crawling

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Journal of Bionic Engineering 2024年第3期21卷 1265-1277页

作者： Yu Liu Qingbiao Shi Zhen Chen Pen-Tung Sah institute of Micro-nano science and technology Xiamen UniversityXiamen361102China

The earthworm has been attracted much attention in the research and development of biomimetic robots due to their unique locomotion mechanism,compact structure,and small motion *** paper presents a new design and prototype of a worm-inspired metameric robot with a movement pattern similar to that of *** robot consists of multiple telescopic modules connected in series through joint *** telescopic module mimics the contraction and elongation motion modes of the earthworm segments.A kinematic and dynamic analysis is conducted on the telescopic module,and an input torque calculation method is provided to ensure sufficient friction between the robot and the pipe *** gait modes of the prototype robot for straight and turning locomotion are introduced,and these modes are extended to robots constructed by different numbers of telescopic *** addition,a method is proposed to increase the friction between the robot and the pipe wall in the aforementioned gait modes without changing the robot structure,thereby improving the robot’s motion ability in *** theoretical model of gait modes has also been validated through gait *** findings of this paper would provide a useful basis for the design,modeling,and control of future worm inspired robots.

关键词： Bio-inspired robot Spatial linkage mechanism Kinematics model Peristaltic locomotion

Realize ultralow-energy-consumption photo-synaptic device based on a single(Al,Ga)N nanowire for neuromorphic computing

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nano Research 2024年第3期17卷 1933-1941页

作者： Xiushuo Gu Min Zhou Yukun Zhao Qianyi Zhang Jianya Zhang Yonglin Huang Shulong Lu College of Electronic and Optical Engineering&College of Flexible Electronics(Future technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Lab of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China School of nano-Tech and nano-Bionics University of Science and Technology of ChinaHefei 230026China Jiangsu Key Laboratory of Micro and nano Heat Fluid Flow technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China

The rapid development of artificial intelligence poses an urgent need for low-energy-consumption and small-sized artificial photonic ***,it is pretty novel to demonstrate a light-stimulated synaptic device based on a single(Al,Ga)N nanowire *** to the presence of vacancy defects in the single nanowire,the artificial synaptic device can simulate multiple functions of biological synapses under stimulation of both 310 and 365 nm light photons,including paired-pulse facilitation,spike timing dependent plasticity,and memory learning *** energy consumption of artificial synaptic device can be reduced as little as 5.58×10^(-13) J,which is close to that of the biological synapse in human ***,the synaptic device is demonstrated to have the high stability for both long-time stimulation and long-time *** on the experimental conductance of long-term potentiation and long-term depression,the simulated three-layer neural network can achieve a high recognition rate of 92%after only 10 training *** a brain-like behavior,the single-nanowire-based synaptic devices can promote the development of visual neuromorphic computing technology and artificial intelligence systems requiring ultralow energy consumption.

关键词： single(Al Ga)N nanowire light-stimulated synaptic device low-energy-consumption neural network

Acousto-optic scanning multi-photon lithography with high printing rate

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Opto-Electronic Advances 2024年第2期7卷 1-3页

作者： Minghui Hong Pen-Tung Sah institute of Micro-nano science and technology Xiamen UniversityXiamen 361005China

As a manufacturing method that is focused on end-users,3D printing has gained a lot of attention in recent years due to its unique advantages in fabricating complex three-dimensional *** new micro-nano 3D printing methods have been developed to meet the demand for high-precision and high-yield *** them,multi-photon-photon lithography(MPL) is a promising 3D nanofabrication technology due to its capability of true 3D digital processing and nanoscale processing resolution beyond the diffraction *** has been widely used to fabricate microoptics10,11,photonic crystals12,microfluidics13,meta-surfaces14,and mechanical metamaterials15.

关键词： photon Acous scanning

Large-Area Gravure-Printed AgNWs Electrode on Water/Oxygen Barrier Substrate for Long-Term Stable Large-Area Flexible Organic Solar Cells

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Chinese Journal of Chemistry 2024年第5期42卷 478-484页

作者： Hao Wang Yaqin Pan Yunfei Han Zhuo Chen Tianyu Liu Lianping Zhang Qun Luo Chang-Qi Ma Printable Electronics Research Center & i-Lab Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences (CAS)SuzhouJiangsu215123 China nano science and technology institute University of Science and Technology of China166 Ren Ai RoadSEID SIPSuzhouJiangsu215123 China

Large-area AgNWs electrodes(25 cm×10 cm)were fabricated through roll-to-roll printing on the polyvinyl alcohol(PVA)modified water and oxygen barrier *** modification of the barrier film with PVA improved the wettability of silver nanowires on the barrier films and led to the formation of homogenous large-area AgNWs *** mechanical flexibility,especially the adhesion force between the silver electrode and the barrier film substrate was dramatically improved through PVA *** efficiency of 13.51%for the flexible OSCs with an area of 0.64 cm2 was achieved based on the PET/barrier film/PVA/AgNWs *** long-term stability showed the flexible OSCs based on the PET/barrier film/PVA/AgNWs electrode have a significantly improved stability relative to the device on PET/AgNWs electrode,and comparable air stability as the rigid device with glass/ITO *** unencapsulated devices maintained nearly 50%of the original efficiency after storage for 600 h in *** a simple top encapsulation,the flexible devices remained at 60%of the initial efficiency after 2000 h in the ***,the flexible AgNWs electrode based on the barrier film would have the potential to improve the air storage stability of organic flexible solar cells.

关键词： Flexible organic solar cell AgNWs electrode Air storage stability Barrier films substrate Energy conversion Flexible electronics Interface

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

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Journal of Semiconductors 2024年第8期45卷 67-73页

作者： Siyi Huang Masao Ikeda Feng Zhang Minglong Zhang Jianjun Zhu Shuming Zhang Jianping Liu School of nano-Tech and nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou institute of nano-Tech and nano-Bionics Chinese Academy of SciencesSuzhou 215123China Key Laboratory of nanodevices and Applications Chinese Academy of SciencesSuzhou 215123China

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this *** annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping *** concentration,resistivity and mobility were characterized by room-temperature Hall *** Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the *** hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature *** appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

关键词： p-GaN hole concentration electrical properties annealing ionization energy