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Laser direct writing of flexible multifunctional airflow sensors on the Kevlar fabric

Nano Research 2025年第1期18卷 443-454页

作者： Wei Wang Zi-Qing Chen Yong-Qi Li Yu-Long Wang Mei-Chen Liu Yun-Bo Ruan Yang Zhang Shu-Juan Liu Qiang Zhao College of Electronic and Optical engineering and College of Flexible electronics(Future Technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China State Key Laboratory of Organic electronics and Information Displays and Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials(IAM)Nanjing University of Posts and TelecommunicationsNanjing 210023China Zhe Jiang Topsun Logistic Control CO. LTD.Yuhuan 317600China department of Rehabilitation Medicine School of Acupuncture-Moxibustion and Tuina and School of Health Preservation and RehabilitationNanjing University of Chinese MedicineNanjing 210023China

The growing interest in flexible devices has emerged as a global trend due to their advantages in flexibility,lightweight structure,and wearability,addressing the limitations of traditional *** wearable airflow sensors have been previously reported,the development of flexible fabric-based airflow sensors capable of functioning in environments with open flames—critical for fire rescue operations—has yet to be explored,largely due to the poor fire resistance of conventional *** this work,we first present a flexible,wearable,and multifunctional airflow sensor with excellent fire-resistant properties,fabricated through a simple direct laser writing *** sensor maintains airflow detection capabilities even in the presence of open ***,the fabrication of fabric-based sensors involves complex procedures such as carbon materials doping or vapor-phase deposition,leading to lengthy preparation cycles and high ***,fabric-based devices are inherently prone to *** address these challenges,we introduce twice-vertical laser-induced graphene(TVLIG)as a sensitive and reliable component for fire-resistant airflow *** resulting TVLIG/Kevlar fabric can be integrated into various garments,particularly protective suits,to form sensitive and fire-resistant airflow sensors capable of detecting airflow velocity and direction in both two-dimensional(2D)and three-dimensional(3D)spaces during fire ***,the TVLIG patterns can be expanded to multifunctional platforms,such as glucose detection for injured individuals,offering further applications in rescue *** functional expansion reduces the burden on rescue personnel and streamlines device *** its outstanding sensing capabilities,fire resistance,and expandability,the developed flexible airflow sensor shows great potential for various real-world rescue scenarios,promising advancements in wearable sensing technology for rescue enginee

关键词： flexible airflow sensor direct laser writing twice-vertical laser-induced graphene fire accident rescue Kevlar fabric

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Effect of size and position of gold nanocrystals embedded in gate oxide of SiO_(2)/Si MOS structures

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Journal of Advanced Dielectrics 2016年第1期6卷 34-38页

作者： Chaitali Chakraborty Chayanika Bose department of electronics and telecommunications engineering jadavpur university Kolkata–700032India

The influence of single and double layered gold(Au)nanocrystals(NC),embedded in SiO_(2) matrix,on the electrical characteristics of metal–oxide–semiconductor(MOS)structures is reported in this *** size and position of the NCs are varied and study is made using Sentaurus TCAD simulation *** a single NC-layered MOS structure,the role of NCs is more prominent when they are placed closer to SiO_(2)/Si-substrate interface than to SiO_(2)/Al–gate *** MOS structures with larger NC dots and double layered NCs,the charge storage capacity is increased due to charging of the dielectric in the presence of *** breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device.A new phenomenon of smearing out of the capacitance–voltage curve is observed in the presence of dual NC layer indicating generation of interface *** internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO_(2)/Si interface.

关键词： Nanocrystals MOS capacitance-voltage curve leakage current

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A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

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Journal of Semiconductors 2011年第10期32卷 32-38页

作者： Sanjoy Deb Saptarsi Ghosh N Basanta Singh A K De Subir Kumar Sarkar department of electronics&Telecommunication engineering Jadavpur University department of electronics&Communication engineering Manipur Institute of Technology department of electronics&Communication engineering National Institute of Technology

A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON *** short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage *** analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter *** of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical *** performance of an SON MOSFET is found to be significantly different from a conventional SOI *** short channel effects are found to be reduced in an SON,thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold *** type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.

关键词： silicon-on-insulator silicon-on-nothing Poisson's equation short channel effects threshold voltage roll-off subthreshold slope

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Deep Neural Network Based Detection and Segmentation of Ships for Maritime Surveillance

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Computer Systems Science & engineering 2023年第1期44卷 647-662页

作者： Kyamelia Roy Sheli Sinha Chaudhuri Sayan Pramanik Soumen Banerjee department of electronics and Tele-Communication engineering Jadavpur UniversityKolkata700032India department of electronics and Communication engineering University of Engineering and ManagementKolkata700160India

In recent years,computer visionfinds wide applications in maritime surveillance with its sophisticated algorithms and advanced ***-matic ship detection with computer vision techniques provide an efficient means to monitor as well as track ships in water *** being an important medium of transport require continuous monitoring for protection of national *** remote sensing satellite images of ships in harbours and water bodies are the image data that aid the neural network models to localize ships and to facilitate early identification of possible threats at *** paper proposes a deep learning based model capable enough to classify between ships and no-ships as well as to localize ships in the original images using bounding box ***,classified ships are again segmented with deep learning based auto-encoder *** proposed model,in terms of classification,provides suc-cessful results generating 99.5%and 99.2%validation and training accuracy *** auto-encoder model also produces 85.1%and 84.2%validation and training *** the IoU metric of the segmented images is found to be of 0.77 *** experimental results reveal that the model is accu-rate and can be implemented for automatic ship detection in water bodies consid-ering remote sensing satellite images as input to the computer vision system.

关键词： Auto-encoder computer vision deep convolution neural network satellite imagery semantic segmentation ship detection

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Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET

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Journal of Semiconductors 2012年第12期33卷 16-22页

作者： Hemant Pardeshi Sudhansu Kumar Pati Godwin Raj N Mohankumar Chandan Kumar Sarkar Nano Device Simulation Laboratory Electronics and Telecommunication Engineering DepartmentJadavpur University SKP engineering College

We investigate the performance of an 18 nm gate length AIInN/GaN heterostructure underlap double gate MOSFET, using 2D Sentaurus TCAD simulation. The device uses lattice-matched wideband Al0.83In0.17N and narrowband GaN layers, along with high-k Al2O3 as the gate dielectric. The device has an ultrathin body and is designed according to the ITRS specifications. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to the large two-dimensional electron gas （2DEG） density and high velocity, the maximal drain current density achieved is very high. Extensive device simulation of the major device performance metrics such as drain induced barrier lowering （DIBL）, subthreshold slope （SS）, delay, threshold voltage （Vt）, Ion/Ioff ratio and energy delay product have been done for a wide range of gate and underlap lengths. Encouraging results for delay, Ion, DIBL and energy delay product are obtained. The results indicate that there is a need to optimize theIoff and SS values for specific logic design. The proposed AlInN/GaN heterostructure underlap DG MOSFET shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.

关键词： MOS-HEMT underlap heterostructure ultrathin body interface traps effective mass

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Adaptive neighbor constrained deviation sparse variant fuzzy c-means clustering for brain MRI of AD subject

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Visual Informatics 2021年第4期5卷 67-80页

作者： Sukanta Ghosh Amlan Pratim Hazarika Abhijit Chandra Rajani K.Mudi department of Instrumentation&electronics engineering Jadavpur UniversityKolkata700106India

Progression of Alzheimer’s disease(AD)bears close proximity with the tissue loss in the medial temporal lobe(MTL)and enlargement of lateral ventricle(LV).The early stage of AD,mild cognitive impairment(MCI),can be traced by diagnosing brain MRI scans with advanced fuzzy c-means clustering algorithm that helps to take an appropriate *** this paper,firstly the sparsity is initiated in clustering method that too rician noise is also incorporated for brain MR scans of AD ***,a novel neighbor pixel constrained fuzzy c-means clustering algorithm is designed where topoloty-based selection of parsimonious neighbor pixels is *** adaptability in choice of neighbor pixel class outliers more justified object edge boundary which outperforms a dynamic cluster *** proposed adaptive neighbor constrained deviation sparse variant fuzzy c-means clustering(AN_DsFCM)can withhold imposed sparsity and withstands rician noise at imposed sparse *** novel algorithm is applied for MRI of AD subjects and normative data is acquired to analyse clustering *** data processing pipeline of theoretically plausible proposition is elaborated in *** experimental results are compared with state-of-the-art fuzzy clustering methods for test MRI *** evaluation and statistical measures are studied to meet both image processing and clinical neurophysiology *** the performance of proposed AN_DsFCM is significantly better than other methods.

关键词： MRI Fuzzy c-means Neighbor information modeling Sparse Rician noise AD

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Design of Computationally Efficient Sharp FIR Filter Utilizing Modified Multistage FRM Technique for Wireless Communications Systems

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Journal of Electronic Science and Technology 2019年第2期17卷 185-192页

作者： Tirthadip Sinha Jaydeb Bhaumik department of electronics and Communication engineering Haldia Institute of Technology Haldia 721657 India department of electronics and Tele-Communication engineering Jadavpur University Kolkata 700032 India

Modern wireless communications gadgets demand multi-standard communications facilities with least overlap between different input radio channels. A sharp digital filter of extremely narrow transition-width with lower stop band ripples offers alias-free switching among the preferred frequency bands. A computationally competent low pass filter (LPF) structure based on the multistage frequency response masking (FRM) approach is proposed for the design of sharp finite impulse response (FIR) filters which are suitable for wireless communications applications. In comparison of basic FRM with other existing multistage FRM structures, the proposed structure has a narrow transition bandwidth and higher stop band attenuation with significant reduction in terms of the number of computational steps. A design example is incorporated to demonstrate the efficiency of the proposed approach. Simulation results establish the improvement of the proposed scheme over other recently published design strategies.

关键词： Multistage frequency response masking narrow transition-width sharp finite impulse response filter wireless communications

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A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect

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Journal of Semiconductors 2013年第11期34卷 31-35页

作者： Sudhansu Kumar Pati Kalyan Koley Arka Dutta N Mohankumar Chandan Kumar Sarkar Nano Device Simulation Laboratory Electronics and Telecommunication Engineering Department Jadavpur University SKP College of engineering Tiruvannamalai

In analog circuit design an important parameter, from the perspective of superior device performance, is linearity. The DG MOSFET in asymmetric mode operation has been found to present a better linearity. In addi- tion to that it provides, at the discretion of analog circuit designer, an additional degree of freedom, by providing independent bias control for the front and the back gates. Here a non-quasi-static （NQS） small signal model for DGMOSFET with asymmetric gate bias is proposed for extracting the parameters of the device using TCAD sim- ulations. The parameters extracted here for analysis are the intrinsic front and back gate to drain capacitance, Cgal and Cgd2, the intrinsic front and back distributed channel resistance, Rgdl and Rgd2 respectively, the transport de- lay, rm, and the inductance, Lsd. The parameter extraction model for an asymmetric DG MOSFET is validated with pre-established extracted parameter data, for symmetric DG MOSFET devices, from the available literature. The device simulation is performed with respect to frequency up to 100 GHz.

关键词： asymmetric DGMOSFET RF modeling small signal analysis parameter extraction

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Temporal variation of solar flare index during solar cycles 21–24

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Research in Astronomy and Astrophysics 2021年第3期21卷 21-33页

作者： Soumya Roy Amrita Prasad Subhash Chandra Panja Sankar Narayan Patra department of Applied electronics and Instrumentation engineering Haldia Institute of TechnologyHaldiaMidnapore(E)-721657West BengalIndia department of Mechanical engineering Jadavpur UniversityKolkata-700032West BengalIndia department of Instrumentation and electronics engineering Jadavpur UniversityKolkata-700106West BengalIndia

The present investigation attempts to quantify the temporal variation of Solar Flare Index(SFI)with other activity indices during solar cycles 21-24 by using different techniques such as linear regression,correlation,cross-correlation with phase lag-lead,*** Solar Activity Indices(SAI)considered in this present study are Sunspot Number(SSN),10.7 cm Solar Radio Flux(F10.7),Coronal Index(CI)and MgⅡCore-to-Wing Ratio(MgⅡ).The maximum cycle amplitude of SFI and considered SAI has a decreasing trend from solar cycle 22,and cycle 24 is the weakest solar cycle among all other *** SFI with SSN,F10.7,CI and MgⅡshows hysteresis during all cycles except for solar cycle 22 where both paths for ascending and descending phases are intercepting each other,thereby representing a phase reversal.A positive hysteresis circulation exists between SFI and considered SAI during solar cycles 22 and 23,whereas a negative circulation exists in cycles 21 and *** has a high positive correlation with coefficient values of 0.92,0.94,0.84 and 0.81 for SSN,F10.7,CI and MgⅡ*** to crosscorrelation analysis,SFI has a phase lag with considered SAI during an odd-number solar cycle(solar cycles21 and 23)but no phase lag/lead during an even-numbered solar cycle(solar cycles 22 and 24).However,the entire smoothed monthly average SFI data indicate an in-phase relationship with SSN,F10.7 and MgⅡ,and a one-month phase lag with *** presence of those above characteristics strongly confirms the outcomes of different research work with various solar indices and the highest correlation exists between SFI and SSN as well as F10.7 which establishes that SFI may be considered as one of the prime activity indices to interpret the characteristics of the Sun’s active region as well as for more accurate short-range or long-range forecasting of solar events.

关键词： Methods:data analysis Methods:statistical Sun:activity Sun:flares Sun:general

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Integrating QoS Management in TLMM:Three Level Mobility Model for Next Generation Wireless IP-Based Networks

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China Communications 2008年第3期5卷 125-139页

作者： M.Chakraborty I.S.Misra A.Mukherjee department of Information Technology Institute of Engineering & Management department of electronics and Telecommunication engineering Jadavpur University IBM Global Services

In this paper we have designed an implemented an integrated framework of QoS for Three Level Mobility Model(TLMM),which has been recently proved to be the optimal mobility management solution for next generation wireless IP-based *** QoS solution uses a combination of IntServ and DiffServ models incorporated in TLMM *** paper also proposes an effi cient dynamic handover policy that takes care of false *** and analytical results have shown that this infrastructure guarantees eff icient QoS handling and scalability among end *** provide a comparative understanding of the QoS mechanism and signaling load of TLMM we have used TeleMIP(without QoS support) and MIP as alternative mobility management protocols.

关键词： Qos NGN wireless IP network

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