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A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology

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Science China(information Sciences) 2024年第1期67卷 318-319页

作者： Huiyang LI Jinxu XU Xiuyin ZHANG School of Electronic and information Engineering South China University of Technology School of microelectronics South China University of Technology

The low noise amplifier (LNA) is one of the most important circuits in the transceiver. Many high-performance LNAs have been demonstrated based on Ga N processes. For instance, by using a hybrid-matching topology with...

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An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

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Journal of Semiconductors 2024年第6期45卷 23-34页

作者： Yiling Xie Baochuang Wang Dihu Chen Jianping Guo School of Electronics and information technology Sun Yat-sen UniversityGuangzhou 510006China School of microelectronics University of Science and Technology of ChinaHefei 230000China

In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power *** event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional *** presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump *** breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient ***,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS *** measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.

关键词： output-capacitorless low-dropout regulator fast transient low quiescent current event-driven charge pump

Enhancing Cybersecurity Competency in the Kingdom of Saudi Arabia:A Fuzzy Decision-Making Approach

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Computers, Materials & Continua 2024年第5期79卷 3211-3237页

作者： Wajdi Alhakami department of information technology College of Computers and Information TechnologyTaif UniversityTaif21944Saudi Arabia

The Kingdom of Saudi Arabia(KSA)has achieved significant milestones in *** has maintained solid regulatorymechanisms to prevent,trace,and punish offenders to protect the interests of both individual users and organizations from the online threats of data poaching and *** widespread usage of information technology(IT)and IT Enable Services(ITES)reinforces *** constantly evolving cyber threats are a topic that is generating a lot of *** this league,the present article enlists a broad perspective on how cybercrime is developing in KSA at present and also takes a look at some of the most significant attacks that have taken place in the *** existing legislative framework and measures in the KSA are geared toward deterring criminal activity *** competency models have been devised to address the necessary cybercrime competencies in this *** research specialists in this domain can benefit more by developing a master competency level for achieving optimum *** address this research query,the present assessment uses the Fuzzy Decision-Making Trial and Evaluation Laboratory(Fuzzy-DMTAEL),Fuzzy Analytic Hierarchy Process(***),and Fuzzy TOPSIS methodology to achieve segment-wise competency development in cyber security *** similarities and differences between the three methods are also *** cybersecurity analysis determined that the National Cyber Security Centre got the highest *** study concludes by perusing the challenges that still need to be examined and resolved in effectuating more credible and efficacious online security mechanisms to offer amoreempowered ITES-driven economy for ***,cybersecurity specialists and policymakers need to collate their efforts to protect the country’s digital assets in the era of overt and covert cyber warfare.

关键词： Cyber security fuzzy DMTAEL security policy cyber crime MCDM

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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Science China(information Sciences) 2024年第9期67卷 346-347页

作者： Yong ZHANG Dongxin TAN Cizhe FANG Zheng-Dong LUO Qiyu YANG Qiao ZHANG Yu ZHANG Xuetao GAN Yan LIU Yue HAO Genquan HAN State Key Discipline Laboratory of Wide Band Gap Semiconductor technology School of MicroelectronicsXidian University Hangzhou Institute of technology Xidian University Key Laboratory of Light Field Manipulation and information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical University

Machine vision has become crucial in the modern intelligence era, especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors [1].With the ever-increasing requirements of visua... 详细信息

关键词： Ferroelectric RAM

Demonstration of acousto-optical modulation based on a thin-film AlScN photonic platform

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Photonics Research 2024年第6期12卷 1138-1149页

作者： KEWEI BIAN ZHENYU LI YUSHUAI LIU SUMEI XU XINGYAN ZHAO YANG QIU YUAN DONG QIZE ZHONG TAO WU SHAONAN ZHENG TING HU School of microelectronics Shanghai UniversityShanghai 201800China School of information Science and technology ShanghaiTech UniversityShanghai 201210China Shanghai Institute of Microsystem and information technology Chinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049China

Acousto-optic(AO)modulation technology holds significant promise for applications in microwave and optical signal ***-film scandium-doped aluminum nitride(AlScN),with excellent piezoelectric properties and a wide transparency window,is a promising candidate for achieving on-chip AO modulation with a fabri-cation process compatible with complementary metal-oxide-semiconductor(CMOS)*** study presents,to the best of our knowledge,the first demonstration of AO modulators with surface acoustic wave generation and photonic waveguides monolithically integrated on a 400-nm-thick film of AlScN on an *** intramodal AO modulation is realized based on an AlScN straight waveguide,and the modulation efficiency is significantly enhanced by 12.3 dB through the extension of the AO interaction length and the utilization of bidirectional acoustic *** intermodal AO modulation and non-reciprocity are further demonstrated based on a multi-mode spiral waveguide,achieving a high non-reciprocal contrast(>10 dB)across an optical bandwidth of 0.48 *** research marks a significant stride forward,representing an advancement in the realization of microwave photonic filters,magnet-free isolators,and circulators based on the thin-film AlScN photonic platform.

关键词： waveguide film microwave

Electric field dependence of spin qubit in a Si-MOS quantum dot

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Chinese Physics B 2024年第6期33卷 248-253页

作者：马荣龙倪铭周雨晨孔真真王桂磊刘頔罗刚曹刚李海欧郭国平 CAS Key Laboratory of Quantum information University of Science and Technology of ChinaHefei 230026China CAS Center for Excellence in Quantum information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Key Laboratory of microelectronics Devices and Integrated technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Beijing Superstring Academy of Memory technology Beijing 100176China Hefei National Laboratory University of Science and Technology of ChinaHefei 230088China Origin Quantum Computing Company Limited Hefei 230026China

Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum ***, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

关键词： silicon-based quantum computing valley electric-dipole spin resonance

Graphene oxide/Al_(2)O_(3)-based diffusive memristor cells:enabling robust crossbar arrays for multidisciplinary applications

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Rare Metals 2024年第8期43卷 3997-4005页

作者： Chen Liu Jun-Cheng Jin Yi-Ke Xiao Xin-Xin Wang Ping-Yuan Yan Yan-Qiang Cao Li-Yong Jiang Chuan-Xiang Sheng Ye-Feng Yu School of microelectronics Nanjing University of Science and TechnologyNanjing 210094China School of Science Nanjing University of Science and TechnologyNanjing210094China School of information Science and technology Fudan UniversityShanghai 200433China

A memristor crossbar array (MCA) has emerged as a cutting-edge platform for advanced memory and neuromorphic computing hardware,offering unrivaled bit-level storage density.A diffusive memristor cell (DMC) is particularly well-suited for MCA integration due to its inherent threshold switching characteristics as a selector,effectively addressing current sneak path *** DMC's potential is acknowledged,it necessitates furtherexploration of their practical applicability.

关键词： crossbar arrays offering

A Review of Image Steganography Based on Multiple Hashing Algorithm

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Computers, Materials & Continua 2024年第8期80卷 2463-2494页

作者： Abdullah Alenizi Mohammad Sajid Mohammadi Ahmad A.Al-Hajji Arshiya Sajid Ansari department of information technology College of Computer and Information SciencesMajmaah UniversityAl-Majmaah11952Saudi Arabia department of Computer Science College of Engineering and Information TechnologyOnaizah CollegesQassim56312Saudi Arabia

Steganography is a technique for hiding secret messages while sending and receiving communications through a cover *** ancient times to the present,the security of secret or vital information has always been a significant *** development of secure communication methods that keep recipient-only data transmissions secret has always been an area of ***,several approaches,including steganography,have been developed by researchers over time to enable safe data *** this review,we have discussed image steganography based on Discrete Cosine Transform(DCT)algorithm,*** have also discussed image steganography based on multiple hashing algorithms like the Rivest–Shamir–Adleman(RSA)method,the Blowfish technique,and the hash-least significant bit(LSB)*** this review,a novel method of hiding information in images has been developed with minimal variance in image bits,making our method secure and effective.A cryptography mechanism was also used in this *** encoding the data and embedding it into a carry image,this review verifies that it has been ***,embedded text in photos conveys crucial signals about the *** review employs hash table encryption on the message before hiding it within the picture to provide a more secure method of data *** the message is ever intercepted by a third party,there are several ways to stop this operation.A second level of security process implementation involves encrypting and decrypting steganography images using different hashing algorithms.

关键词： Image steganography multiple hashing algorithms Hash-LSB approach RSA algorithm discrete cosine transform(DCT)algorithm blowfish algorithm

CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of microelectronics Devices and Integrated technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory