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Giant nonlinear Hall effect in twisted bilayer WSe2

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National science Review 2023年第4期10卷 97-104页

作者： Meizhen Huang Zefei Wu Jinxin Hu Xiangbin Cai En Li Liheng An Xuemeng Feng Ziqing Ye Nian Lin Kam Tuen Law Ning Wang Department of physics and Center for Quantum Materials The Hong Kong University of Science and Technology William mong institute of nano science and technology The Hong Kong University of Science and Technology

The recently discovered nonlinear Hall effect(NHE) in a few non-interacting systems provides a novel mechanism for generating second-harmonic electrical Hall signals under time-reversal-symmetric conditions. Here, we introduce a new approach to engineering an NHE by using twisted moiré *** found that the twisted WSe2bilayer exhibited an NHE when the Fermi level was tuned to the moiré flat bands. When the first moiré band was half-filled, the nonlinear Hall signal exhibited a sharp peak with a generation efficiency that was at least two orders of magnitude greater than those obtained in previous experiments. We discuss the possible origins of the diverging generation efficiency in twisted WSe2based on resistivity measurements, such as moiré-interface-induced correlation effects and mass-diverging-type continuous Mot transition. This study demonstrates not only how interaction effects can combine with Berry curvature dipoles to produce novel quantum phenomena, but also the potential of NHE measurements as a new tool for studying quantum criticality.

关键词： nonlinear Hall effect moiré superlattice twisted bilayer WSe2 continuous Mott transition electron-electron correlation effect

Electron-electron interactions in monolayer graphene quantum capacitors

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nano Research 2013年第8期6卷 619-626页

作者： Xiaolong Chen Lin Wang Wei Li Yang Wang Zefei Wu Mingwei Zhang Yu Han Yuheng He Ning Wang Department of physics and the William mong institute of nano science and technology Hong Kong University of Science andTechnology Hong Kong S.A.R. China

We demonstrate the effects of electron-electron （e-e） interactions in monolayer graphene quantum capacitors. Ultrathin yttrium oxide showed excellent per-formance as the dielectric layer in top-gate device geometry. The structure and dielectric constant of the yttrium oxide layers have been carefully studied. The inverse compressibility retrieved from the quantum capacitance agreed fairly well with the theoretical predictions for the e--e interactions in monolayer graphene at different temperatures. We found that electron-hole puddles played a significant role in the low-density carrier region in graphene. By considering the temperature-dependent charge fluctuation, we established a model to explain the round-off effect originating from the e-e interactions in monolayer graphene near the Dirac point.

关键词： graphene e-e interaction inverse compressibility quantum capacitance charge fluctuation electron-hole puddles

Large-diameter indium antimonide microwire based broadband and robust optical switch

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science China(physics,Mechanics & Astronomy) 2023年第2期66卷 68-78页

作者： Fei Lou Xiangpeng Cui Xinyue Sheng Chunyan Jia Shuaiyi Zhang Xia Wang Vladislav Khayrudinov Baitao Zhang Shande Liu Wing Yim Tam Harri Lipsanen He Yang Jingliang He Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao School of Mathematics and PhysicsQingdaoUniversityof Scienceand TechnologyQingdao266061China School of Instrumenation and Optoeletronic Engineering Beihang University Beijing 100191China Department of Electronics and nanoengineering Aalto Universiy EspooFl-0o076Finland State Key Laboratory of Crystal Materials institute of Novel Semiconductors Shandong University.Jinan 250100China College of Electronic and Information Engineering Shandong University of Science and TechnologyQingdao 266590China depariment of physics and wiliam mong institute of nano science and technology Hong Kong University of Science and Technology.HongKongChina

Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been ***,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and ***,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μ***,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm *** findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.

关键词： optical antimonide InSb

Regulating crystallization and retarding oxidation in Sn-Pb perovskite via 1D cation engineering for high performance all-perovskite tandem solar cells

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Journal of Energy Chemistry 2025年第1期 646-652页

作者： Ranran Liu Xin Zheng Zaiwei Wang Miaomiao Zeng Chunxiang Lan Shaomin Yang Shangzhi Li Awen Wang Min Li Jing Guo Xuefei Weng Yaoguang Rong Xiong Li Michael Gr?tzel Center for Mesoscopic Solar Cells Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology institute of technology for Carbon Neutrality Shenzhen Institute of Advanced Technology Chinese Academy of Sciences School of physics and Optoelectronic Engineering Hainan University Suzhou institute of nano-Tech and nano-Bionics (SInano) Chinese Academy of Sciences School of Chemistry Chemical Engineering and Life Sciences State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology

All-perovskite tandem solar cells have the potential to surpass the theoretical efficiency limit of single junction solar cells by reducing thermalization ***,the challenges encompass the oxidation of Sn2+to Sn4+and uncontrolled crystallization kinetics in Sn-Pb perovskites,leading to nonradiative recombination and compositional heterogeneity to decrease photovoltaic efficiency and operational ***,we introduced an ionic liquid additive,1-ethyl-3-methylimidazolium iodide （EMIMI） into Sn-Pb perovskite precursor to form low-dimensional Sn-rich/pure-Sn perovskites at grain boundaries,which mitigates oxidation of Sn2+to Sn4+and regulates the film-forming dynamics of Sn/Pb-based perovskite *** optimized single-junction Sn-Pb perovskite devices incorporating EMIMI achieved a high efficiency of 22.87%.Furthermore,combined with wide-bandgap perovskite sub-cells in tandem device,we demonstrate 2-terminal all-perovskite tandem solar cells with a power conversion efficiency of 28.34%,achieving improved operational stability.

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A monolithic InP/SOI platform for integrated photonics

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Light(science & Applications) 2021年第11期10卷 2143-2152页

作者： Zhao Yan Yu Han Liying Lin Ying Xue Chao Ma Wai Kit Ng Kam Sing Wong Kei May Lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of physics and William mong institute of nano science and technology Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

The deployment of photonic integrated circuits(PICs)necessitates an integration platform that is scalable,high-throughput,cost-effective,and *** we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms:Si photonics and InP *** monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard(001)-oriented silicon-on-insulator(SOI)*** epitaxial InP is in-plane,dislocation-free,site-controlled,intimately positioned with the Si device layer,and placed right on top of the buried oxide layer to form“InP-on-insulator”.These attributes allow for the realization of various photonic functionalities using the epitaxial InP,with efficient light interfacing between the III-V devices and the Si-based *** exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires,square cavities,and *** results here mark a critical step forward towards fully-integrated Si-based PICs.

关键词： SOI monolithic integration

Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

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Chinese physics B 2023年第9期32卷 474-480页

作者：张正中郭儒雅薄锐刘昊 Faculty of Mathematics and physics Huaiyin Institute of TechnologyHuai'an 223003China nano science and technology institute University of Science and Technology of ChinaSuzhou 215123China

A single-molecule magnet is a long-sought-after nanoscale component because it can enable us to miniaturize nonvolatile memory storage *** signature of a single-molecule magnet is switching between two bistable magnetic ground states under an external magnetic *** on this feature,we theoretically investigate a magnetic-fieldcontrolled reversible resistance change active at low temperatures in a molecular magnetic tunnel junction,which consists of a single-molecule magnet sandwiched between a ferromagnetic electrode and a normal metal *** numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode ***,different magnetic configurations can be“read out”based on different resistance states or different spin polarization parameters in the current spectrum,even in the absence of a magnetic *** an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve *** difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic *** proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices,with potential applications in future high-density nonvolatile memory devices.

关键词： single-molecule magnet spin dependent electron tunneling spin valve

Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet

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Chinese physics B 2021年第6期30卷 552-558页

作者： Zheng-Zhong Zhang Hao Liu Faculty of Mathematics and physics Huaiyin Institute of TechnologyHuaian 223003China nano science and technology institute University of Science and Technology of ChinaSuzhou 215123China

A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.

关键词： single-molecule magnet spin-transfer torque spin-dependent electron tunneling

GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE

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Chinese physics B 2015年第10期24卷 644-650页

作者：郑新和刘三姐夏宇甘兴源王海啸王乃明杨辉 Department of physics College of Mathematics and PhysicsUniversity of Science and Technology Beijing Key Laboratory of nano-Devices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of Sciences

We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction（TJ） with using tellurium（Te） and magnesium（Mg） as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy（MBE） at low temperature. The test Te/Mg-doped GaAs TJ shows a peak current density of 21 A/cm2. The tandem solar cell by the Te/Mg TJ shows a short-circuit current density of 12 m A/cm2, but a low open-circuit voltage range of1.4 V^1.71 V under AM1.5 illumination. The secondary ion mass spectroscopy（SIMS） analysis reveals that the Te doping is unexpectedly high and its doping profile extends to the Mg doping region, thus possibly resulting in a less abrupt junction with no tunneling carriers effectively. Furthermore, the tunneling interface shifts from the intended Ga As n＋＋/p＋＋junction to the AlGaInP/GaAs junction with a higher bandgap AlGaInP tunneling layers, thereby reducing the tunneling peak. The Te concentration of ~ 2.5 × 1020 in GaAs could cause a lattice strain of 10-3 in magnitude and thus a surface roughening,which also negatively influences the subsequent growth of the top subcell and the GaAs contacting layers. The doping features of Te and Mg are discussed to understand the photovoltaic response of the studied tandem cell.

关键词： Te doping Mg doping GaAs tunnel junction GalnP/GaAs tandem solar cell molecular beamepitaxy

A Theoretical Model to Explain the Mechanism of Electromagnetic Wave Propagation Along Cylindrical Micelles

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Communications in Theoretical physics 2013年第7期60卷 136-138页

作者： Afshin Moradi Department of nano science Kermanshah University of Technology Department of nano science Institute for Studies in Theoretical Physics and Mathematics (IPM)

A theoretical model to explain the mechanism of the electromagnetic wave propagation in the quasi two-dimensional layer of counterions adjacent to the surface of a charged cylindrical membrane is presented. By using Maxwell and hydrodynamic equations with appropriate boundary conditions, general expression of dispersion relation is obtained for the electromagnetic wave with mixed TE and TM modes.

关键词： micelle electromagnetic wave dispersion relation