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Journal of Energy Chemistry 2025年第1期100卷 59-65页

作者： Mengyu Xu Shaocong Yan Ting Liang Jia Jia Shengjie Yuan Dongxing Kou Zhengji Zhou Wenhui Zhou Yafang Qi Yuena Meng Litao Han Sixin Wu Key Laboratory for Special Functional Materials of MOE National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology School of Nanoscience and Materials Engineering Henan University

Solution-processed Cu（In,Ga）Se2（CIGS） solar cells suffer from serious carrier recombination and power conversion efficiency（PCE） loss because of the poor film properties and easy formation of ***, we propose Ag&Se co-selenization strategy to enhance the crystallization and passivate harmful defects of the CIGS films. The formation of Ag-Se phase during the selenization process enables the formation of large grains and suppresses the deep level defects. It is found that Ag doping can enlarge the depletion region width, lower the Urbach energy and prolong the carrier lifetime. As a result, a champion solution-processed CIGS solar cell presents a high efficiency of 16.48% with the highly improved opencircuit voltage（VOC） of 662 m V and fill factor（FF） of 75.8%. This work provides an efficient strategy to prepare high quality solution-processed CIGS films for high-performance CIGS solar cells.

关键词： CIGS solar cells Solution-processed method Ag doping crystal growth Defects engineering

Gamma Irradiation Effects in InBi_(0.8) Te_(0.2) crystals Grown by Horizontal Directional Freezing

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Acta Metallurgica Sinica(English Letters) 2015年第10期28卷 1205-1213页

作者： C.J.Ajayakumar A.G.Kunjomana Department of Physics Crystal Research CentreChrist University

The high-energy gamma-ray irradiation treatment using Co-60 isotope offers the possibility of engineering mechanical and optoelectronic properties of In Bi0.8Te0.2crystals. Tellurium-doped indium bismuthide（In Bi） crystals were prepared by horizontal directional freezing technique. Dose-dependent modifications in structure, composition and surface topographical features have been analyzed by X-ray powder diffraction, X-ray energy-dispersive analysis, transmission electron and atomic force microscopy, respectively. Dielectric constant and dielectric loss were found to increase with the cumulative dose of radiation, and a shift in the ferroelectric transition temperature（Tc） from 405 to 410 K was observed for25 k Gy. Upon irradiation, there is an enhancement in microhardness（HV）, yield stress（ry） and stiffness constant（C11）.The optical transmittance was decreased by 12.45%, resulting in a reduction in the optical band gap from 0.210 e V to0.198 e V. These results indicate the suitability of In Bi0.8Sb0.2crystals for low-wavelength infrared applications.

关键词： crystal growth Dielectric properties Optical properties Hardness Irradiation

Influence of Te doping on the dielectric and optical properties of InBi crystals grown by directional freezing

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International Journal of Minerals,Metallurgy and Materials 2014年第5期21卷 503-509页

作者： C.J. Ajayakumar A.G. Kunjomana crystal research centre Department of PhysicsChrist University

Stoichiometric pure and tellurium （Te） doped indium bismuthide （InBi） were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant （e）, loss tangent （tan6）, and AC conductivity （cry） reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium （4.04 at%）, a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.

关键词： crystals indium bismuthide tellurium doping optical properties dielectric properties phase transitions

^(60)Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

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Acta Metallurgica Sinica(English Letters) 2015年第5期28卷 559-566页

作者： Thankamma George A.G.Kunjomana crystal research centre Department of Physics Christ University

Physical vapor deposition method was employed to deposit antimony telluride （Sb2Te3） crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction, atomic force and scanning electron microscopy. Seebeck coefficient （Sic）, electrical conductivity （σ⊥c） as well as power factor （PF） were enhanced for pure Sb2Te3 samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 × 10^-3 W m-1K-2 with an enhancement of 22% in the figure of merit （Z）. When the delivered dose of 60Co gamma radiation was increased from 0 to 30 kGy in the stoichiometric crystals, σ⊥c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 kGy gamma- irradiated crystals. Both RH （BIIc） and S⊥c were positive, suggesting that the prepared Sb2Te3 crystals retained the p-type semiconductivity after these treatments.

关键词： Antimony telluride Physical vapor deposition Irradiation Annealing Conductivity Seebeck coefficient

Electrical and mechanical properties of vapour grown gallium monotelluride crystals

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International Journal of Minerals,Metallurgy and Materials 2013年第10期20卷 967-971页

作者： P.M.Reshmi A.G.Kunjomana K.A.Chandrasekharan crystal research centre Department of PhysicsChrist University

The physical vapour deposition （PVD） of gallium monotelluride （GaTe） in different crystalline habits was established in the growth ampoule, strongly depending on the temperature gradient. Proper control on the temperatures of source and growth zones in an indigenously fabricated dual zone furnace could yield the crystals in the form of whiskers and spherulites. Optical and electron microscopic images were examined to predict the growth mechanism of morphologies. The structural parameters of the grown spherulites were determined by X-ray powder diffraction （XRD）. The stoichiometric composition of these crystals was confirmed using energy dispersive analysis by X-rays （EDAX）. The type and nature of electrical conductivity were identified by the conventional hot probe and two probe methods, respectively. The mechanical parameters, such as Vickers microhardness, work hardening index, and yield strength, were deduced from microindentation measurements. The results show that the vapour grown p-GaTe crystals exhibit novel physical properties, which make them suitable for device applications.

关键词： gallium monotelluride spherulites whiskers physical vapour deposition electrical conductivity microha^d-hess

Thermoluminescence characteristics and dosimetric aspects of fluoroperovskites (NaMgF_3:Eu^(2+),Ce^(3+))

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Journal of Rare Earths 2014年第6期32卷 496-500页

作者： D.Joseph Daniel O.Annalakshmi U.Madhusoodanan P.Ramasamy centre for crystal Growth SSN College of Engineering Radiological Safety Division Indira Gandhi Centre for Atomic Research

The perovskite-like NaMgF3 polycrystalline powder samples, pure and rare earth doped, were synthesized by conventional solid state reaction method. The perovskite material was doped with 0.2 mol.% of EuF3 and CeF3 impurity. Phase purity of synthe-sized compounds was analyzed by powder X-ray diffraction technique. The thermoluminescence response of polycrystalline samples showed a linear response up to 12 Gy and then became sub linear at higher doses. The order of kinetics （b）, activation energy （E） and other trapping parameters were calculated using peak shape method and variable heating rate method. From glow curve analysis the symmetric factor was calculated. The glow curve showed two peaks at 404 and 488 K, and both of them confirmed the thermolumi-nescence in the phosphor, which obeyed second-order kinetics. The experimental resulted showed that this phosphor could have po-tential applications in radiation dosimetry.

关键词： europium thermoluminescence kinetic parameters ionizing radiation rare earths

research progress of large size SiC single crystal materials and devices

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Light(Science & Applications) 2023年第1期12卷 60-67页

作者： Xiufang Chen Xianglong Yang Xuejian Xie Yan Peng Longfei Xiao Chen Shao Huadong Li Xiaobo Hu Xiangang Xu State Key Laboratory of crystal Materials Institute of novel semiconductorsShandong UniversityJinan 250100China

SiC semiconductor is the focus of recent international *** is also an important raw material for China to achieve carbon emission peak and carbon *** nearly 20 years of research and development,we focus on the three types SiC crystals,n-type,p-type and semi-insulating,indicating the development of Shandong University for crystal *** defects control,electrical property,atomic polishing,and corresponding device authentication all obtain great *** dislocation density of 6-inch n-type substrates decreases to 2307 cm^(-2),where BPD(Basal Plane Dislocation)lowers to 333 cm^(-2) and TSD(Threading Screw Dislocation)19 cm^(-2).The full width at half maximum(FWHM)(0004)rocking curves is only 14.4 *** resistivity reaches more than 1E+12Ω·cm for semi-insulating SiC and lower than 20 mΩ·cm for n-type *** impurity concentrations in 6-inch high-purity semi-insulating(HPSI)SiC crystals reach extreme low *** devices made of various substrate materials have good performance.

关键词： crystal size purity

research on crystal growth and properties of a new nonlinear optical crystal:Bismuth borate BiB_3O_6

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Chinese Science Bulletin 2001年第21期46卷 1783-1785页

作者： TENG Bing, WANG Jiyang, WANG Zhengping, JIANG Huaidong, SONG Renbo, LIU Hong, HU Xiaobo, LIU Yaogang, WEI Jingqian & SHAO ZongshuState Key Laboratory of crystal Materials, Shandong University, Ji’nan 250100, China State Key Laboratory of crystal Materials Shandong University Ji’nan China

BiB3O6 (BIBO) single crystals with sizes of 44 mm × 24 mm × 10 mm and weight of 24.7 g have been successfully grown by the top-seeded method. In this note, the preparation of seed, the growth of crystal and some problems encountered are reported. The lattice parameters of BIBO are a =7.1203(7)A, b = 4.9948(7)A, c = 6.5077(7)A, β= 105.586(8) ", V=222.93(5)A3, which were determined by BRUKER-P4 four-circle diffractometer. BIBO is biaxial crystal and the relative orientation of (X, Y, Z) with regard to (a, b, c) is: X|| b, (Y, c) =47.2°, (Z, a) = 31.6°, determined by the X-ray analysis combined with polarized microscopy. The second-harmonic-generation (SHG) conversion efficiency of the sample for 1.064 μm light is up to 67.7%. We have also obtained the third harmonic generation (THG) of 1.064 μm, namely, 1.064 μm + 0.532 μn →0.355 μm. BIBO crystal is free of moisture and hygroscopy.

关键词： BiB3O6 nonlinear optical crystal crystal growth trans-mittance crystal orientation.

Influences of Co-Doping Cation on Properties of PWO∶F- Scintillating crystal

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Journal of Rare Earths 2006年第Z1期24卷 169-171页

作者： Zhang Mingrong Zhang Chunsheng Fan Yuhong Ge Yuncheng crystal Laboratory Beijing Glass Research Institute Beijing 100062 China Crystal Laboratory Beijing Glass Research Institute Beijing 100062 China Crystal Laboratory Beijing Glass Research Institute Beijing 100062 China Crystal Laboratory Beijing Glass Research Institute Beijing 100062 China

Whereas the light yield of PWO crystal can be significantly improved by doping with either of F- and Sb3+, effects of heavily co-doping with by F-+Sb3+, F-+Ca2+, and F-+Ca2++Sb3+, respectively, on the properties of PWO scintillation crystals, including optical transmission, luminescence and light yield were studied. The result indicates that co-doping with three dopants, F-+Ca2++Sb3+, is a more effective measure than doping with single dopant F- for the improvement of scintillation properties of PWO crystals, including light yield.

关键词： lead tungstate scintillation crystal light yield doping

Flexible Graphene Field‑Effect Transistors and Their Application in Flexible Biomedical Sensing

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Nano-Micro Letters 2025年第2期17卷 252-313页

作者： Mingyuan Sun Shuai Wang Yanbo Liang Chao Wang Yunhong Zhang Hong Liu Yu Zhang Lin Han Institute of Marine Science and Technology Shandong UniversityQingdao 266237ShandongPeople’s Republic of China State Key Laboratory of crystal Materials Shandong UniversityJinan 250100ShandongPeople’s Republic of China School of Integrated Circuits Shandong UniversityJinan 250100ShandongPeople’s Republic of China Shandong Engineering research Center of Biomarker and Artificial Intelligence Application Jinan250100ShandongPeople’s Republic of China

Flexible electronics are transforming our lives by making daily activities more *** to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and ***,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and *** combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical ***,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning *** ability of FGFETs to sense strains and biomolecular charges opens up diverse application *** specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical ***,we discuss the current challenges and prospects of FGFETs and their applications in biomedical *** review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.

关键词： Flexible Graphene Field-effect transistor Wearable Implantable Biosensor