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Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

Science China(Information Sciences) 2024年第6期67卷 190-197页

作者： Zheng BIAN Feng TIAN Zongwen LI Xiangwei SU Tianjiao ZHANG Jialei MIAO Bin YU Yang XU Yuda ZHAO college of integrated circuits Hangzhou Global Scientific and Technological Innovation CentreZhejiang University

Optical memory integrates the function of optical sensing in memory devices, remarkably promoting the interconnection between sensory and memory terminals. Silicon charge-coupled photodetectors and floating gate memory have been widely used in imaging and storage technologies, respectively. However,the heterogeneous integration of the two devices requires technological innovation and complex electrical connections. In this work, we adopt a three-dimensional layer stacking method to design a novel optical memory device. On the top of Si charge-coupled photodetectors, we successively deposit two-dimensional graphene,hexagonal boron nitride, and molybdenum disulfide as a floating gate layer, a tunneling layer, and a readout layer, respectively. By applying a gate bias on lightly doped Si, a deep depletion layer is formed with a high voltage potential drop. Under dark conditions, the depletion layer cannot be filled, and the electric field across the h-BN tunnel barrier is relatively small. Under light irradiation, the deep depletion layer is gradually filled, and the h-BN tunneling layer withstands the increasing electric field, resulting in charge storage in the floating gate layer. Based on this mechanism, the device exhibits a gate voltage-dependent operation mode, including an integrated optical sensing-memory mode and an electrically driven storage mode. Under moderate gate voltage, the device can effectively detect the optical information with varied intensity and store the optical information in the floating gate, displaying optically controlled memory characteristics. Our work demonstrates a compact device structure for optical memory and displays excellent optically controlled memory performance, which can be applied in artificial vision systems.

关键词： heterogeneous integration charge-coupled device floating gate optical memory molybdenum disulfide lightly doped silicon

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Enhanced potassium storage of carbon nanofibers as binderfree anodes enabled by coupling ultra-small amorphous Sb_(2)O_(3),graphene modification and sulfur doping

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Rare Metals 2024年第1期43卷 51-64页

作者： Zhao Huang Yu-Kang Lou Lin Peng Yuan Peng Meng-Meng Wang Ming Zhang college of Railway Transportation Hunan University of TechnologyZhuzhou 412007China college of Semiconductors(college of integrated circuits) Changsha Semiconductor Technology and Application Innovation Research InstituteHunan UniversityChangsha 410082China Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

Considering the intrinsic advantages of natural copiousness and cost-effectiveness of potassium resource,potassium-ion batteries(KIBs) are booming as prospective alternatives to lithium-ion batteries(LIBs) in large-scale energy storage scenarios. Nevertheless, lacking desirable electrodes for reversibly hosting the bulky K+hinders the widespread application of KIBs, and it needs to be urgently solved. Hereon, the porous S-doped Sb_(2)O_(3)-graphene-carbon(SAGC) nanofibers are manufactured through an adjustable and facile approach, which involves electrospinning, in situ etching and sulfuration. The synthesized SAGC is featured by the ultra-small amorphous Sb_(2)O_(3) homogeneously wrapped inside the carbon matrix, as well as the co-incorporation of graphene and sulfur. Tentatively,the SAGC nanofiber sheets are applied as binder-free anodes for KIBs, exhibiting a prominent cycling life(256.72 m Ah·g^(-1) over 150 cycles at 100 m A·g^(-1)) and rate·g^(-1) over 100 cycles at 1 A·g^(-1)). The positive synergy among all the active components accounts for the distinguished performances of the SAGC. By reinforcing the tolerability to the swelling stress, producing the valid electrochemical active sites, and promoting the charge transferring for reversible K+uptake, the SAGC finally renders the excellent cyclability, capacity, and rate capability. Moreover, the extrinsic electrochemical pseudocapacitance characteristics induced by the porous carbon substrate elevate the K-storage capacity of the SAGC as well. It is hoped that the conclusions drawn may offer new insights into a direction for the high-performance binderfree KIB anodes.

关键词： S-doped Sb_(2)O_(3)-graphene-carbon Nanofibers Binder-free Anodes Potassium-ion batteries

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Pyridine-regulated Sb@InSbS3 ultrafine nanoplates as high-capacity and long-cycle anodes for sodium-ion batteries

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Rare Metals 2024年第5期43卷 2080-2092页

作者： Jia-Ying Ren Xiang-Lin Yu Chang-Miao Chen Xin-Yu Hu Ting Yang Ming Zhang college of Materials Science and Engineering and college of Science Central South University of Forestry and Technology college of Semiconductors (college of integrated circuits) Changsha Semiconductor Technology and Application Innovation Research InstituteHunan University

Sb-based materials exhibit considerable potential for sodium-ion storage owing to their high theoretica capacities.However,the bulk properties of Sb-based materials always result in poor cycling and rate performances.To overcome these issues,pyridine-regulated Sb@InSbS3ultrafine nanoplates loaded on reduced graphene oxides （Sb@InSbS3@rGO） were designed and synthesized.During the synthesis process,pyridine was initially adopted to coordinate with In3+,and uniformly dispersed In2S3ultrafine nanoplates on reduced graphene oxide were generated after sulfidation.Next,partial In3+was exchanged with Sb3+,and Sb@InSbS3@rGO was obtained by using the subsequent annealing method.The unique structure of Sb@InSbS3@rGO effectively shortened the transfer path of sodium ions and electrons and provided a high pseudocapacitance.As the anode in sodium-ion batteries,the Sb@InSbS3@rGO electrode demonstrated a significantly higher reversible capacity better stability (445 m Ah·g-1at 0.1 A·g-1after 200 cycles and 212 mAh·g-1at 2 A·g-1after 1200 cycles),and superior rate (210 mAh·g-1at 6.4 A·g-1) than the electrode without pyridine (355 mAh·g-1at 0.1 A·g-1after 55 cycles and 109 mAh·g-1at 2 A·g-1after 770 cycles)Furthermore,full cells were assembled by using the Sb@InSbS3@rGO as anode and Na3V2（PO4）3as cathode which demonstrated good cycling and rate performances and exhibited promising application prospects.These results indicate that adjusting the microstructure of electrode materials through coordination balance is A·good strategy for obtaining high-capacity,high-rate,and longcycle sodium storage performances.

关键词： Sodium-ion battery Sb-based anode material Pyridine coordination Reduced size nanostructure Half/full cell

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HCSP-Net:A Novel Model of Age-Related Macular Degeneration Classification Based on Color Fundus Photography

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Computers, Materials & Continua 2024年第4期79卷 391-407页

作者： Cheng Wan Jiani Zhao Xiangqian Hong Weihua Yang Shaochong Zhang college of Electronic and Information Engineering/college of integrated circuits Nanjing University of Aeronautics and AstronauticsNanjing211106China Shenzhen Eye Institute Shenzhen Eye HospitalJinan UniversityShenzhen518040China

Age-related macular degeneration(AMD)ranks third among the most common causes of blindness.As the most conventional and direct method for identifying AMD,color fundus photography has become prominent owing to its consistency,ease of use,and good quality in extensive clinical practice.In this study,a convolutional neural network(CSPDarknet53)was combined with a transformer to construct a new hybrid model,HCSP-Net.This hybrid model was employed to tri-classify color fundus photography into the normal macula(NM),dry macular degeneration(DMD),and wet macular degeneration(WMD)based on clinical classification manifestations,thus identifying and resolving AMD as early as possible with color fundus photography.To further enhance the performance of this model,grouped convolution was introduced in this study without significantly increasing the number of parameters.HCSP-Net was validated using an independent test set.The average precision of HCSPNet in the diagnosis of AMD was 99.2%,the recall rate was 98.2%,the F1-Score was 98.7%,the PPV(positive predictive value)was 99.2%,and the NPV(negative predictive value)was 99.6%.Moreover,a knowledge distillation approach was also adopted to develop a lightweight student network(SCSP-Net).The experimental results revealed a noteworthy enhancement in the accuracy of SCSP-Net,rising from 94%to 97%,while remarkably reducing the parameter count to a quarter of HCSP-Net.This attribute positions SCSP-Net as a highly suitable candidate for the deployment of resource-constrained devices,which may provide ophthalmologists with an efficient tool for diagnosing AMD.

关键词： Computer-aided diagnosis deep learning age-related macular degeneration transformer

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Improvement of Ga_(2)O_(3)vertical Schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction

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Journal of Semiconductors 2024年第4期45卷 63-68页

作者： Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li School of integrated circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China college of integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China Beijing Microelectronics Technology Institute Beijing 100076China

The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.

关键词： Ga_(2)O_(3) Schottky barrier diode NiO/Ga_(2)O_(3)heterojunction

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Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

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Science China(Information Sciences) 2024年第6期67卷 152-171页

作者： Mingsheng XU Yuwei WANG Jiwei LIU Deren YANG college of integrated circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

Two-dimensional(2D) materials are at the forefront of innovation, heralding a new era for nextgeneration electronics and optoelectronics. These materials are distinguished by their unique structural characteristics: they have no hanging bonds on their surface, exhibit weakened electrostatic shielding in the Z-direction, and boast atomic thickness in their monolayers. These features have led to groundbreaking discoveries in electrical, optical, and magnetic properties, paving the way for advancements in low-power electronics, valleytronics, infrared detectors, and memory devices. Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration. In response to this ongoing evolution, the National Natural Science Foundation of China(NSFC) initiated a major program in 2021 dubbed “Si-compatible two-dimensional semiconductor materials and devices”. This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions. Additionally, it sheds light on the challenges that researchers in the 2D domain face, particularly in developing Si-compatible 2D technologies.

关键词： two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration low-power

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Multifunctional interfacial molecular bridge enabled by an aggregation-induced emission strategy for enhancing efficiency and UV stability of perovskite solar cells

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Journal of Energy Chemistry 2024年第8期95卷 588-595页

作者： Shuhang Bian Yuqi Wang Fancong Zeng Zhongqi Liu Bin Liu Yanjie Wu Long Shao Yongzhi Shao Huan Zhang Shuainan Liu Jin Liang Xue Bai Lin Xu Donglei Zhou Biao Dong Hongwei Song State Key Laboratory on integrated Optoelectronics College of Electronic Science and Engineering Jilin University college of Science Shanghai University

The interface defects between the electron transport layer（ETL） and the perovskite layer,as well as the low ultraviolet（UV） light utilization rate of the perovskite absorption layer,pose significant challenges for the commercialization of perovskite solar cells（PSCs）.To address this issue,this paper proposes an innovative multifunctional interface modulation strategy by introducing aggregation-induced emission（AIE） molecule 5-[4-[1,2,2-tri[4-（3,5-dicarboxyphenyl）phenyl]ethylene] phenyl]benzene-1,3-dicarboxylic acid（H8ETTB） at the SnO2ETL/perovskite interface.Firstly,the interaction of H8ETTB with the SnO2surface,facilitated by its carboxyl groups,is effective in passivating surface defects caused by noncoord inated Sn and O vacancies.This interaction enhances the conductivity of the SnO2film and adjusts energy levels,leading to enhanced charge carrier transport.Simultaneously,H8ETTB can passivate noncoord inated Pb2+ions at the perovskite interface,promoting perovskite crystallization and reducing the interface energy barrier,resulting in a perovskite film with low defects and high crystalline quality.More importantly,the H8ETTB molecule,can convert UV light into light absorbable by the perovskite,thereby reducing damage caused by UV light and improving the device's utilization of UV.Consequently,the champion PSC based on SnO2-H8ETTB achieves an impressing efficiency of 23.32%and significantly improved photostability compared with the control device after continuous exposure to intense UV radiation.In addition,the Cs0.05(FA0.95MA0.05)0.95Pb(I0.95Br0.05)3based device can achieve maximum efficiency of 24.01%,demonstrating the effectiveness and universality of this strategy.Overall,this innovative interface bridging strategy effectively tackles interface defects and low UV light utilization in PSCs,presenting a promising approach for achieving highly efficient and stable PSCs.

关键词： Aggregation-induced emission Defect passivation Efficiency Perovskite solar cells UV stability

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Wideband Circularly Polarized Substrate-integrated Waveguide Aperture-Coupled Metasurface Antenna Array for Millimeter-Wave Applications

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Chinese Journal of Electronics 2024年

作者： Jiwei LIAN Chun GENG Xue LU Dazhi DING School of Microelectronics (School of integrated circuits) Nanjing University of Science and Technology State Key Laboratory of Millimeter Waves Southeast University Qian Xuesen college Nanjing University of Science and Technology

A wideband circularly polarized(CP) aperture-coupled metasurface antenna operating at millimeterwave frequency spectrum in substrate-integrated waveguide(SIW) technology is proposed. Such a proposed metasurface antenna is composed of two substrates. The first substrate contains an end-shorted SIW section with a slot etched. The introduced metasurface is printed on the top of the second substrate. The metasurface is comprised of3 × 3 unit cells, each of which contains two interconnected patches and two parasitic patches. The working mechanism of the proposed metasurface antenna is illustrated in details. The proposed metasurface antenna has wide impedance bandwidth and axial ratio(AR) bandwidth, which are 66.7% and 40%, respectively. Using the proposed metasurface antenna, a 4 × 4 CP metasurface antenna array with an impedance bandwidth of 24%, an AR bandwidth of 30%, and a peak gain of 18.7 dBic in simulation is developed in this paper for millimeter-wave applications.

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Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

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Journal of Semiconductors 2024年第4期45卷 48-55页

作者： Nuo Xu Gaoqiang Deng Haotian Ma Shixu Yang Yunfei Niu Jiaqi Yu Yusen Wang Jingkai Zhao Yuantao Zhang State Key Laboratory of integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.

关键词： nitrogen polarity GaN Schottky barrier diodes annealing interface state

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Mode-insensitive and mode-selective optical switch based on asymmetric Y-junctions and MMI couplers

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Photonics Research 2024年第3期12卷 423-430页

作者： SHIJIE SUN QIDONG YU YUANHUA CHE TIANHANG LIAN YUHANG XIE DAMING ZHANG XIBIN WANG State Key Laboratory of integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

Driven by the large volume demands of data in transmission systems,the number of spatial modes supported by mode-division multiplexing(MDM)systems is being increased to take full advantage of the parallelism of the signals in different spatial modes.As a key element for photonic integrated circuits,the multimode waveguide optical switch(MWOS)is playing an important role for data exchange and signal switching.However,the function of the traditional MWOS is simple,which could only implement the mode-insensitive or mode-selective switching function;it is also difficult to scale to accommodate more spatial modes because of the limitation of the device structure.Therefore,it is still challenging to realize a multifunctional and scalable MWOS that could support multiple modes with low power consumption and high flexibility.Here,we propose and experimentally demonstrate a multifunctional MWOS based on asymmetric Y-junctions and multimode interference(MMI)couplers fabricated on a polymer waveguide platform.Both mode-insensitive and mode-selective switching functions can be achieved via selectively heating different electrode heaters.The fabricated device with the total length of∼0.8 cmshows an insertion loss of less than 12.1 dB,and an extinction ratio of larger than 8.4 dB with a power consumption of∼32 mW for both mode-insensitive and mode-selective switching functions,at 1550 nm wavelength.The proposed MWOS can also be scaled to accommodate more spatial modes flexibly and easily,which can serve as an important building block for MDM systems.

关键词： waveguide optical mode

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