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Anomalous magnetic property and broadband photodetection in ultrathin non-layered manganese selenide semiconductor

Nano Research 2024年第9期17卷 8578-8584页

作者： Ye Zhao Ruilong Yang Ke Yang Jiarui Dou Xiaoting Yang Jinzhong Guo Guowei Zhou Xiaohong Xu School of Chemistry and materials Science Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of EducationShanxi Normal UniversityTaiyuan 030006China Research Institute of materials Science Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and TechonologyShanxi Normal UniversityTaiyuan 030006China

Two-dimensional(2D)semiconductors with intrinsic ferromagnetism are highly desirable for potential applications in nextgeneration spintronic and optoelectronic ***,controllable synthesis of intrinsic 2D magnetic semiconductor on a substrate is still a challenging ***,large-area 2D non-layered rock salt(α-phase)MnSe nanosheets were grown on mica substrates,with the thickness changing from 54.2 to 0.9 nm(one unit cell),by chemical vapour *** X-ray diffraction,Raman spectroscopy,transmission electron microscopy,and X-ray photoelectron spectroscopy measurements confirmed that the resulting 2Dα-MnSe nanosheets were obtained as high-quality single *** magnetic hysteresis loops and synchrotron X-ray measurements directly indicated the anomalous magnetic properties inα-MnSe *** analysis of the reasons for magnetic property revealed that the low-temperature phase transition,small number of stacking differences in crystals,and surface weak oxidation in(111)-orientedα-MnSe were the main ***,α-MnSe nanosheets exhibited broadband photoresponse from 457 to 671 nm with an outstanding detectivity and responsivity *** study presents the detailed growth process of ultrathin 2D magnetic semiconductorα-MnSe,and its outstanding magnetic properties and broadband photodetection,which provide an excellent platform for magneto-optical and magneto-optoelectronic research.

关键词： two-dimensional material anomalous magnetism broadband photodetection α-phase MnSe non-layered crystal

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Reversible Optical Isolators and Quasi-Circulators Using a Magneto-Optical Fabry-Pérot Cavity

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Chinese Physics Letters 2024年第4期41卷 59-68页

作者：张天天周文鹏李志向唐宇涛许帆吴浩东张涵唐江山阮亚平夏可宇 College of Engineering and Applied Sciences National Laboratory of Solid State Microstructuresand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Shenzhen Shaanxi Coal Hi-tech Research Institute Co. LtdShenzhen 518083China School of Physics Nanjing UniversityNanjing 210023China Jiangsu Key Laboratory of Artificial Functional materials Nanjing UniversityNanjing 210023China

Nonreciprocal optical devices are essential for laser protection,modern optical communication and quantum information processing by enforcing one-way light *** conventional Faraday magneto-optical nonreciprocal devices rely on a strong magnetic field,which is provided by a permanent *** a result,the isolation direction of such devices is fixed and severely restricts their applications in quantum *** this work,we experimentally demonstrate the simultaneous one-way transmission and unidirectional reflection by using a magneto-optical Fabry-Pérot cavity and a magnetic field strength of 50 *** optical isolator and a three-port quasi-circulator are realized based on this nonreciprocal cavity *** isolator achieves an isolation ratio of up to 22 dB and an averaged insertion loss down to 0.97 *** quasi-circulator is realized with a fidelity exceeding 99% and an overall survival probability of 89.9%,corresponding to an insertion loss of~0.46 *** magnetic field is provided by an electromagnetic coil,thereby allowing for reversing the light circulating *** reversible quasi-circulator paves the way for building reconfigurable quantum networks.

关键词： quantum reciprocal insertion

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Intrinsic exchange bias effect in strain-engineered single antiferromagnetic LaMnO3 films

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Science China materials 2019年第7期62卷 1046-1052页

作者： Guowei Zhou Huihui Ji Yuhao Bai Zhiyong Quan Xiaohong Xu School of Chemistry and materials Science Key Laboratory of Magnetic Molecules and Magnetic Information Materials Ministry of Education Shanxi Normal University Linfen 041004 China Research Institute of materials Science of shanxi Normal University & collaborative innovation center for shanxi advanced permanent magnetic materials and techonology Linfen 041004 China School of Physics and Electronic Information Shanxi Normal University Linfen 041004 China

In this work, epitaxial growth of LaMnO3 thin films on different substrates using pulsed laser deposition under tensile and compressive strain was studied. The intrinsic exchange bias effect was observed in the single A-type antiferromagnetic LaMnO3 films no matter whether the tensile or compressive strain was supplied by the substrates. Due to the lattice mismatch between the film and different substrates, the intense strain can induce MnO6 octahedral rotation in the bottom region of the film neighboring the substrate, which leads to the distortion of MnO6 octahedron and the net magnetic behavior. However, the upper part maintains the original A-type antiferromagnetic order due to strain relaxation. The exchange bias effect in single films is attributed to the coupling between the bottom canted magnetic part and the upper antiferromagnetic region. The observation of exchange bias in single films on different substrates enables the emergence of a new class of biasing components in spintronics, which are based on strain-engineering.

关键词： magnetic insulating state exchange bias Mn06 octahedral rotation strain and interface effects magnetic properties

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Reversible control of magnetic and transport properties of NdNiO_(3-δ)epitaxial films

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Journal of Rare Earths 2021年第3期39卷 317-322,I0003页

作者： Huihui Ji Guowei Zhou Jun Zhang Xiaojiao Wang Xiaohong Xu Key Laboratory of magnetic Molecules and magnetic Information materials Ministry of EducationSchool of Chemistry and Materials ScienceShanxi Normal UniversityLinfen 041004China Research Institute of materials Science of shanxi Normal University&collaborative innovation center for shanxi advanced permanent magnetic materials and Technology Linfen 041004China

Rare-earth nickelates possess intrinsic charge order,orbital order,and electron-lattice coupling,which make them very interesting for applications in oxide-based electronic *** this study,we grew NdNiO_(3-δ)(NNO) films with oxygen pressures changing from 27 to 10^(-5) *** decreasing oxygen pressure,the antiferromagnetic state of the NNO film becomes a ferromagnetic state,and the resistance increases *** to combined X-ray absorption spectro scopy and X-ray linear dichroism measurements,the ratio of Ni^(2+)-ions increases with decreasing oxygen-pressure,and the preferred orbital occupation changes from x^(2)-y^(2) to 3 z^(2)-r^(2).In addition,using the ionic-liquid gating method to control the migration of oxygen vacancies,both the magnetic properties and resistance of NNO films can be modulated *** oxygen vacancy induces a valence in the Ni ions and the orbital occupation changes,which alters the magnetic properties and the electronic transport in these NNO *** study describes a novel tunable method for electronic devices that use NdNiO_(3-δ) films,and opens new doors for future improvements and functionalities.

关键词： NdNiO3 films Oxygen vacancy Valence state Orbital occupation Ionic liquid gating Rare earths

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Homogeneous and inhomogeneous magnetic oxide semiconductors

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Chinese Physics B 2019年第9期28卷 1-8页

作者： Xiao-Li Li Xiao-Hong Xu Key Laboratory of magnetic Molecules&magnetic Information materials of Ministry of Education and School of Chemistry and materials Science Shanxi Normal UniversityLinfen 041004China Research Institute of materials Science of shanxi Normal University and collaborative innovation center for shanxi advanced permanent magnetic materials and Technology Linfen 041004China

magnetic oxide semiconductors are significant spintronics *** this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide *** the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic *** the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical *** the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed *** the related mechanisms are discussed in ***, we provide an overview and possible potential applications of magnetic oxide semiconductors.

关键词： magnetic oxide semiconductors ferromagnetism magnetoresistance

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Strain-induced robust magnetic anisotropy and room temperature magnetoelectric coupling effect in epitaxial SmFeO3 film

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Science China materials 2020年第10期63卷 2062-2070页

作者： Jun Zhang Wuhong Xue Tiancong Su Huihui Ji Zhi Yan Guowei Zhou Zhiyong Quan Xiaohong Xu School of Chemistry and materials Science of shanxi Normal University&Key Laboratory of magnetic Molecules and magnetic Information materials of Ministry of Education Linfen 041004China Department of Chemistry&Chemical Engineering Lvliang UniversityLvliang 033001China Research Institute of materials Science of shanxi Normal University&collaborative innovation center for shanxi advanced permanent magnetic materials and techonology Linfen 041004China

Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material,holding great potential in novel low-power electronic ***,simultaneous magnetic and ferroelectric orders as well as magnetoelectric(ME)coupling effect at room temperature(RT)in this system have not been demonstrated *** this study,epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3(Nb-STO)substrates by a pulsed laser deposition(PLD)*** results show that the films exhibit obvious ferromagnetic and ferroelectric orders at ***,the magnetic anisotropy gradually changes from out-of-plane(OP)to in-plane(IP)direction with increasing film thickness,which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed ***,electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect,suggesting promising applications in new-generation electric-write magnetic-read data storage devices.

关键词： SmFeO3 film multiferroicity magnetoelectric coupling magnetic anisotropy

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Spontaneous positive exchange bias effect in SrFeO_(3-x)/SrCoO_(3-x) epitaxial bilayer

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Rare Metals 2021年第7期40卷 1858-1864页

作者： Tian-Cong Su Jun Zhang Wei Zhang Ying-Ying Wang Hui-Hui Ji Xiao-Jiao Wang Guo-Wei Zhou Zhi-Yong Quan Xiao-Hong Xu School of Chemistry and materials Science Shanxi Normal UniversityLinfen 041004China Department of Chemistry and Chemical Engineering Lvliang UniversityLvliang 033001China Key Laboratory of magnetic Molecules and magnetic Information materials of Ministry of Education Linfen 041004China Research Institute of materials Science Shanxi Normal UniversityLinfen 041004China collaborative innovation center for shanxi advanced permanent magnetic materials and techonology Linfen 041004China

A novel phenomenon of spontaneous positive exchange bias(PEB)is reported in SrFeO_(3-x)/SrCoO_(3-x) epitaxial bilayer without undergoing any magnetic field *** inserting a thick SrTiO3(STO)nonmagnetic spacer(about 6 nm)into the bilayer interface,this phenomenon still *** on a series of testing means,the spontaneous PEB effect is supposed to be mainly related to short-range ferromagnetic(FM)exchange coupling at the interface when there is no STO *** the STO interlayer reaches up to a certain thickness,shortrange coupling interaction basically *** this time,the long-range dipole field may be responsible for the coupling of the FM and antiferromagnetic(AFM)layer across the nonmagnetic STO and then leads to the same bias *** discoveries provide a new way to realize and manipulate spontaneous exchange bias-based spintronics devices,such as magnetic recording heads and spin valves.

关键词： SrFeO_(3-x)/SrCoO_(3-x)bilayer Spontaneous positive exchange bias Long-range dipole field Exchange coupling

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Controlled synthesis of GeSe_(2) and GeSe nanostructures induced by TBAB

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Rare Metals 2023年第1期42卷 189-197页

作者： Huan Yang Yue Wu Li-Yan Hu Juan-Juan Wang Fang Wang Xiao-Hong Xu School of Chemistry and materials Science of shanxi Normal University and Key Laboratory of magnetic Molecules and magnetic Information materials of Ministry of Education Taiyuan031000China Research Institute of materials Science of shanxi Normal University and collaborative innovation center for advanced permanent magnetic materials and Technology of Ministry of Education Taiyuan031000China

Ge-based selenides have attracted extensive attention as promising candidates for future optoelectronic *** great progress has been achieved,the controlled synthesis of GeSe2and GeSe nanostructures and understanding the relative growth mechanisms of them are still ***,monodispersed GeSe_(2) nanoflowers with a diameter of~4μm and highly uniform GeSe nanoparticles with a lateral size of~100 nm are presented by using a colloidal synthetic *** is found that borane tert-butylamine complex(TBAB)plays an important role in determining the Ge-Se crystal phases due to its moderately ***,the coexistence of GeSe_(2) and GeSe phases can also be acquired by precisely controlling the amount of *** brief,this work provides both new insights of the phase control of Gebased selenides by liquid-phase method and a practical means of producing well-controlled germanium selenide nanostructures.

关键词： GeSe_(2) GeSe Borane tert-butylamine complex(TBAB) Liquid-phase method Bandgaps

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Room-temperature ferromagnetism enhancement in Fe-doped VSe2nanosheets synthesized by a chemical method

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Rare Metals 2021年第9期40卷 2501-2507页

作者： Li-Yan Hu Li-Fang Yu Huan Yang Xian Xu Fang Wang Xiao-Hong Xu School of Chemistry and materials Science Shanxi Normal UniversityLinfen 041004China Key Laboratory of magnetic Molecules and magnetic Information materials Ministry of EducationLinfen 041004China Research Institute of materials Science Shanxi Normal UniversityLinfen 041004China collaborative innovation center for shanxi advanced permanent magnetic materials and Technology Linfen 041004China

Two-dimensional(2 D)few-layerVSe_(2),V_(1-x)Fe_(x)Se_(2) nanosheets have been synthesized by a hightemperature organic solution-phase method. The thickness of VSe_(2) nanosheets can be tuned from 12 to 5 layers by decreasing the precursor concentrations. The few-layer VSe_(2) nanosheets show the room-temperature ferromagnetism. The coercivity and magnetization reach 0.024 T and 0.036 mA·m^(2)·g^(-1) at room temperature. The chargedensity wave behavior is also confirmed in VSe_(2) by the hysteresis loops and zero-field-cooling curve. V_(1-x)Fe_(x)Se_(2) nanosheets can be obtained by doping Fe(acac)3 in the reaction process. The room-temperature coercivity and magnetization of V_(0.8)Fe_(0.2)Se_(2) nanosheets are 5 times higher than those of the pure VSe_(2) nanosheets without destroying the structures. The enhancement of magnetization is due to the coupling interaction of 3 d orbits between V and Fe atoms. Higher Fe concentration is beneficial to improve the coercivity, which is attributed to the formation of the second phase Fe3 Se4. This simple chemical preparation method can be extended to prepare the other 2 D materials.

关键词： VSe2 Fe doping Two-dimensional nanosheets Room-temperature ferromagnetism Chemical method

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Experimental observation of topological Hall effects in compensated ferrimagnet-heavy metal layered structures

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Science China(Physics,Mechanics & Astronomy) 2021年第8期64卷 98-106页

作者： Zheng-Yu Xiao Zhi-Yong Quan Wei Zhang Dong Li Hui-Hui Liu Guo-Wei Zhou Jun Zhang Fei Zhang Xia Liu Xiao-Hong Xu Ming-Zhong Wu Key Laboratory of magnetic Molecules and magnetic Information materials of Ministry of Education School of Chemistry and Materials ScienceShanxi Normal UniversityLinfen 041004China Research Institute of materials Science Shanxi Normal UniversityLinfen 041004China collaborative innovation center for shanxi advanced permanent magnetic materials and Technology Linfen 041004China Department of Physics Colorado State UniversityFort CollinsColorado 80523USA

The topological Hall effect(THE) as a powerful probe for the experimental observation of topological spin textures, such as magnetic skyrmions, has been observed in a wide variety of distinct material systems. However, limited experimental observations have been reported for antiferromagnetic(AFM) materials. Here, the THE signals in the AFM state were observed in compensated ferrimagnetic thin films interfaced with heavy metals at the magnetization compensation temperature(TM).Ferrimagnetic CoTb thin films grown on Pt thin films were used in the experiments. The Co Tb films exhibited a magnetization compensation point at which the moments of Co and Tb sublattices canceled each other, giving rise to the AFM state. The temperature(T)-dependent Hall measurements showed anomalous Hall effect(AHE) and THE responses at T≠T_(M) but pure THE responses at T=T_(M). Control measurements and analyses suggest that the THE responses are associated with interfacial Dzyaloshinskii-Moriya interaction(DMI) rather than the overlapping of different AHE signals in the structure. This work presents the first-ever observation of interfacial DMI-induced THE in AFM metal trilayered systems and demonstrates a new approach for electrical reading of chiral spin textures in AFM thin film-based heterostructures.

关键词： topological Hall effect antiferromagnetic state chiral spin textures

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