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Special Photoconverter

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Semiconductor Photonics and Technology 2001年第3期7卷 158-162页

作者： CAOJun－kai XIEShun－kun 等 chongqingoptoelectronicsresearchinstitute Chongqing400060CHN

A special device with photocurrent amplification function is reported. The device with long base region structure consists of dual route photodetectors and their amplifier. Two photodetectors with a space of 50 μm are precisely located in this device. The device with current sensitivity of S ≥15 A/lm,static state current transmission coefficient of h FE ≥5 000, single route dark current of I D≥1 μA, high frequency current transmission coefficient modulus of | h fe |≥1 at 400 MHz is obtained. At present, the device has been tried out in

关键词： Photodetector Photoconverter Optoelectronic devices

Model GC1312S Multifunction Integrated Optical Circuit Devices

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Semiconductor Photonics and Technology 2001年第4期7卷 193-196页

作者： ZENGQing－gao LIGang－yi 等 chongqingoptoelectronicsresearchinstitute Chongqing400060CHN

Model GC1312S multifunction integrated optical circuit device (MIOC) used in inertial grade interferometric fiber optics gyroscopes (IFOGs) is fabricated by annealing and proton exchange process (APE). The unique feature of the device is the incorporation of the beat detection circuit besides all the features the conventional single Y branch multifunction integrated optical circuit devices have. The device structure, operation principle and typical characteristics, etc., are briefly presented in this paper.

关键词： FOG MIOC Beat detection Annealing and proton exchange

1.3μm wide bandwidth semiconductor laser module

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Semiconductor Photonics and Technology 1995年第1期1卷 57-61页

作者： WANGPinhong CAIKaiqing chongqingoptoelectronicsresearchinstitute Yongchuan632163CHN ChongqingOptoelectronicsResearchInstitu

We have fabricated high speed 1.3μm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room *** this paper,the design,fabrication techniques and microwave package of module are described in detail,and the microwave and optoelectronic performances are discussed.

关键词： Laser Diodes Modules Packaging High Speed Devices

Integrated model optocouplers

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维普期刊数据库

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Semiconductor Photonics and Technology 1995年第1期1卷 77-80页

作者： LIYinghui QITianyou chongqingoptoelectronicsresearchinstitute Yongchuan632163CHN ChongqingOptoelectronicsResearchInstitu

Utilizing hybrid integration *** integrated model optocouplers have successfully *** design,fabrication and characteristic parameters of the devices are presented.

关键词： Integrated Optoelectronics Hybrid Integrated Circuits Optical Couplers Insulation

High performance superluminescent diodes at 1.3μm wavelength

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Semiconductor Photonics and Technology 1995年第1期1卷 62-66页

作者： ZHUZhiwen CAIKaiqing chongqingoptoelectronicsresearchinstitute Yongchuan632163CHN ChongqingOptoelectronicsResearchInstitu

The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output *** output power of about 70O μW is coupled into a single-mode fiber at 150 mA and 25℃.Spectrum width is more than 30 *** devices operate in superluminescent state in the range from 0℃ to 60℃.

关键词： Semiconductor Devices Superluminescent Diodes Sensors Fibre Optic Gyros.

Integrated Optics Acoustooptic Receiver

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Semiconductor Photonics and Technology 1996年第3期2卷 159-167页

作者： PUTianchun LIUYongzi chongqingoptoelectronicsresearchinstitute Yongchuan632163CHN UniversityofElectronicSeienceandTechnology Chengdu610054CHN

The recent advances on the research and the applications of the integrated optics acousto-optic spectrum analyzer(IOSA) are reviewed. The operating principle, architecture, characteristics and technology, and future d... 详细信息

关键词： Acoustic-optic Technology Integrated Optics Spectrum Analyzer

Effect of Electron Drag on Performances of Carbon Nanotubes as Flow Sensors

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Semiconductor Photonics and Technology 2004年第4期10卷 271-274页

作者： LUEJian-wei WANGWan-lu LIAOKe-jun CAOChun-lan LIUCang-lin ZENGQing-gao Dept.ofAppl.Phys. ChongqingUniversityChongqing400044CHN ChongqingDailyGroup Chongqing400010CHN chongqingoptoelectronicsresearchinstitute Chongqing400060CHN

Experimentally, the electron drag effect on carbon nanotube surface in flowing liquids was investigated. It was found that electric current could be generated in metallic carbon nanotubes immersed in the liquids. Carbon nanotubes were synthesized on Si substrate by hot filament chemical vapor deposition. The experimental results showed that the flow-induced current on the surface of carbon nanotube films was closely depended on the flow rate, concentration, properties and temperature of liquids. The flow-induced current was increased with the increasing of flow rate, concentration and temperature of liquids. The obtained results were discussed in detail.

关键词： Carbon nanotubes Surface Electron drag effect CVD Films

Piezoresistive Sensors Based on Carbon Nanotube Films

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Semiconductor Photonics and Technology 2005年第1期11卷 61-64页

作者： LuJian-wei WANGWan-lu LIAOKe-jun WANGYong-tian LIUCHang-lin ZengQing-gao Dept.ofAppl.Phys. ChongqingUniversityChongqing400044CHN／／ChongqingDailyGroupChongqing400010CHN Dept.ofAppl.Phys. ChongqingUniversityChongqing400044CHN chongqingoptoelectronicsresearchinstitute Chongqing400060CHN

Piezoresistive effect of carbon nanotube films was investigated by athree-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapordeposition. The experimental results showed that the carbon nanotubes have a striking piezoresistiveeffect. The relative resistance was changed from 0 to 10.5 X 10^(-2) and 3. 25 X 10^(-2) for dopedand undoped films respectively at room temperature when the microstrain under stress from 0 to *** gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change inthe band gap for the doped tubes and the defects for the undoped tubes.

关键词： carbon nanotubes strain piezoresistivity resistance change band gap