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Room-temperature ferroelectricity in van der Waals SnP_(2)S_(6)

Frontiers of physics 2024年第4期19卷 113-123页

作者： Chaowei He Jiantian Zhang Li Gong Peng Yu state key laboratory of Optoelectronic Materials and Technologies Guangzhou key laboratory of Flexible electronic Materials and Wearable devices Nanotechnology Research Center School of Materials Science and EngineeringSun Yat-sen UniversityGuangzhou 510275China Instrumental Analysis and Research Center Sun Yat-sen UniversityGuangzhou 510275China

Two-dimensional(2D)ferroelectric materials,which possess electrically switchable spontaneous polarization and can be easily integrated with semiconductor technologies,is of utmost importance in the advancement of high-integration low-power *** the experimental discovery of certain 2D ferroelectric materials such as CuInP2S6 and In2Se3,achieving stable ferroelectricity at room temperature in these materials continues to present a significant ***,stable ferroelectric order at room temperature in the 2D limit is demonstrated in van der Waals SnP_(2)S_(6) atom layers,which can be fabricated via mechanical exfoliation of bulk SnP_(2)S_(6) *** polarization is observed in thin SnP_(2)S_(6) of~7 ***,a van der Waals ferroelectric field-effect transistor(Fe-FET)with ferroelectric SnP_(2)S_(6) as top-gate insulator and ptype WTe0.6Se1.4 as the channel was designed and fabricated successfully,which exhibits a clear clockwise hysteresis loop in transfer characteristics,demonstrating ferroelectric properties of SnP_(2)S_(6) atomic *** addition,a multilayer graphene/SnP_(2)S_(6)/multilayer graphene van der Waals vertical heterostructure phototransistor was also fabricated successfully,exhibiting improved optoelectronic performances with a responsivity(R)of 2.9 A/W and a detectivity(D)of 1.4×10^(12) *** results show that SnP_(2)S_(6) is a promising 2D ferroelectric material for ferroelectric-integrated low-power 2D devices.

关键词： two-dimensional ferroelectric materials ferroelectric fieldeffect transistors photodetectors

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Exploring charge and spin fluctuations in infinite-layer cuprate SrCuO_(2)from a phonon perspective

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Science china(Physics,Mechanics & Astronomy) 2024年第8期67卷 159-167页

作者： Xin Du Pei-Han Sun Ben-Chao Gong Jian-Feng Zhang Zhong-Yi Lu Kai Liu Department of Physics and Beijing key laboratory of Opto-electronic Functional Materials&Micro-nano devices Renmin University of ChinaBeijing 100872China Department of Physics School of ScienceJiangsu University of Science and TechnologyZhenjiang 212100China Institute of Physics Chinese Academy of SciencesBeijing 100190China key laboratory of Quantum state Construction and Manipulation(Ministry of Education) Renmin University of ChinaBeijing 100872China

The infinite-layer cuprate ACu O_(2)(A=Ca,Sr,Ba)possesses the simplest crystal structure among numerous cuprate superconductors and can serve as a prototypical system to explore the unconventional *** on the first-principles electronic structure calculations,we have studied the electronic and magnetic properties of the infinite-layer cuprate SrCuO_(2)from a phonon *** find that interesting fluctuations of charges,electrical dipoles,and local magnetic moments can be induced by the atomic displacements of phonon modes in SrCuO_(2)upon the hole *** all optical phonon modes of SrCuO_(2)in the antiferromagnetic Néel state,only the A_(1g)mode that involves the full-breathing O vibrations along the Cu-O bonds can cause significant fluctuations of local magnetic moments on O atoms and dramatic charge redistributions between Cu and O ***,due to the atomic displacements of the A_(1g)mode,both the charge fluctuations on Cu and the electrical dipoles on O show a dome-like evolution with increasing hole doping,quite similar to the experimentally observed behavior of the superconducting T_(c);in comparison,the fluctuations of local magnetic moments on O display a monotonic enhancement along with the hole *** analyses indicate that around the optimal doping,there exists a large softening in the frequency of the A_(1g)phonon mode and a van Hove singularity in the electronic structure close to the Fermi level,suggesting potential electron-phonon *** work reveals the important role of the full-breathing O phonon mode playing in the infinite-layer SrCuO_(2),which may provide new insights in understanding the cuprate superconductivity.

关键词： first-principles calculations cuprate superconductors phonon charge and spin fluctuations

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Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd_(2)As_(2)

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Science china(Physics,Mechanics & Astronomy) 2024年第4期67卷 119-125页

作者： Yuxiang Wang Jianwen Ma Jian Yuan Wenbin Wu Yong Zhang Yicheng Mou Jiaming Gu Peihong Cheng Wu Shi Xiang Yuan Jinglei Zhang Yanfeng Guo Cheng Zhang state key laboratory of Surface Physics and Institute for Nanoelectronic devices and Quantum Computing Fudan UniversityShanghai 200433China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China state key laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Anhui Province key laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory of the Chinese Academy of SciencesHefei 230031China School of Physics and electronic Science East China Normal UniversityShanghai 200241China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China ShanghaiTech laboratory for Topological Physics Shanghai 201210China

EuCd_(2)As_(2)was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet ***,the heavily p-doped Eu Cd_(2)As_(2)crystals in previous experiments prevent direct identification of the semimetal ***,we present a comprehensive magneto-transport study of high-quality Eu Cd_(2)As_(2)crystals with ultralow bulk carrier density(10^(13)cm^(-3)).In contrast to the general expectation of a Weyl semimetal phase,Eu Cd_(2)As_(2)shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band ***,the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude,and induce a periodic resistance oscillation due to the geometric *** nonlinear transport results from the high nonequilibrium state induced by an electrical field near the band *** results suggest an insulating phase in Eu Cd_(2)As_(2)and put a strong constraint on the underlying mechanism of anomalous transport properties in this system.

关键词： magnetic Weyl semimetal quantum transport Hall effect nonlinear resistivity

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Interfacial DMI in Fe/Pt thin films grown on different buffer layers

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Chinese Physics B 2024年第4期33卷 712-718页

作者：张文君魏菲刘冰周阳康仕寿孙兵 School of Physics and electronic Information Weifang UniversityWeifang 261061China School of Physics and state key laboratory of Crystal Materials Shandong UniversityJinan 250100China

We study the interfacial Dzyaloshinskii-Moriya interactions(i-DMI)of Fe/Pt bilayers grown on Si substrates with MgO,SiO_(2),or Ta each as a buffer layer on the basis of wave-vector-resolved Brillouin light scattering(BLS)*** obtained i-DMI energy values for Fe/Pt on MgO,Ta,and SiO_(2) buffer layers are 0.359,0.321,and 0.274 mJ/m~2,*** large i-DMI value observed in Fe/Pt system on the MgO buffer layer can be attributed to the good interfacial quality and the Rshaba effect at the MgO/Fe ***,the MgO/Fe/Pt system,benefiting from better sample quality,exhibits a lower damping ***,layer-resolved first-principles calculations are carried out to gain a more in-depth understanding of the origin of the i-DMI in the Fe/Pt *** results indicate that in the Fe(110)/Pt(111)system,the substantial DMI energy between Fe spins at the interface is related to a significant change in spin-orbit coupling(SOC)energy in the neighboring Pt *** contrast,for the MgO(002)/Fe(002)system,both the DMI and its related SOC energy are concentrated at the interfacial Fe *** investigation will provide a valuable insight into the spintronic community in exploring novel devices with chirality dependence.

关键词： Fe/Pt i-DMI BLS ferromagnetic resonance magnetic relaxation

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Accurate identification of glass crystallization helps in selecting high electronic conductivity materials

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Progress in Natural Science:Materials International 2024年第3期34卷 503-511页

作者： Fanhou Kong Shuli Li Suoqi Zhao Huiwen Li Lin Li Zhenting Zang Rui Zhang Hongrui Liu Lehan Wang Changjiu Li Keng H.Chung Dongying key laboratory of New Energy Materials and devices & School of Chemical Engineering Shandong Institute of Petroleum and Chemical Technology Special Glass key Lab of Hainan Province & state key laboratory of Marine Resource Utilization in South china Sea Hainan University

Though the current research on vanadium-based glass electrodes has made great progress, the conductivity theory of V-based glasses has not been obviously improved and crystals cannot be positioned precisely. The changes in the valence state of V3+, V4+and V5+are regulated by the strong reducing agent Fe2P to realize valence bond transformation of the amorphous electrode, explore the redox process of multi-electron reactions and further optimize the conductivity of electrode materials. VPFe2 and VPFe3 precipitate VO2crystals and VPFe4 precipitates VO2and V6O11crystals. Electron back-scattered diffraction was used to accurately identify the distribution and specific positions of both types of crystals. V6O11crystals exhibit a strong texture according to pole figure and inverse pole figure. XPS reveals that Fe2P and V2O5, undergo a redox reaction during the hightemperature melting process, where V5+is reduced to V4+and V3+and V4+renders a positive influence on conductivity. The addition of Fe2P increases the content of V4+in the glass and VPFe3 glass contains the highest content of V4+, leading to the highest electronic conductivity. V2O5transforms into VO2crystals and VO2transforms into V6O11with the increase of Fe2P content. The type of nanocrystal precipitation in glass affects electronic conductivity.

关键词： Electron back-scattered diffraction electronic conductivity Glass crystallization Multi-electron reactions V2O5

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Efficient terahertz generation from van der Waalsα-In_(2)Se_(3)

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Chinese Optics Letters 2024年第1期22卷 141-146页

作者：段诗婕杨鸣周溯媛张隆辉韩锦森孙旭王广刘昌勤康冬冬王小伟陈家浩戴佳钰 Department of Physics College of ScienceNational University of Defense TechnologyChangsha 410073China Hunan key laboratory of Extreme Matter and Applications(XMAL) Changsha 410073China Hunan key laboratory for Micro-Nano Energy Materials and devices School of Physics and OptoelectronicsXiangtan UniversityXiangtan 411105China Guangxi key laboratory of Automatic Detecting Technology and Instrument Guilin University of Electronic TechnologyGuilin 541004China

Two-dimensional(2D)van der Waals materials have attracted tremendous attention due to their versatile physical properties and flexible manipulation *** the various types of van der Waals materials,α-In_(2)Se_(3)is remarkable for its intrinsic 2D ferroelectricity and high-performance opto-electronic ***,the study of theα-In_(2)Se_(3)system in terahertz(THz)radiation is scarce,although it is promising for electrically controlled THz field *** investigate theα-In_(2)Se_(3)in different thicknesses and report that the THz generation efficiency induced by femtosecond laser pulses can be largely improved by reducing the thickness from the ***,we reveal the surge current in thin film coupled with THz emission exhibits a different Auger recombination mode,which is helpful in understanding the mechanism and provides insights into the design of 2D highly efficient THz devices.

关键词： van der Waals terahertz carrier dynamics

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Weak Fault Feature Extraction of the Rotating Machinery Using Flexible Analytic Wavelet Transform and Nonlinear Quantum Permutation Entropy

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Computers, Materials & Continua 2024年第6期79卷 4513-4531页

作者： Lili Bai Wenhui Li He Ren Feng Li TaoYan Lirong Chen College of Aeronautics and Astronautics Taiyuan University of TechnologyTaiyuan030024China Commercial Aircraft Corporation of china Ltd.Shanghai200126China College of Physics and electronic Engineering State Key Laboratory of Quantum Optics and Quantum Optics DevicesShanxi UniversityTaiyuan030006China

Addressing the challenges posed by the nonlinear and non-stationary vibrations in rotating machinery,where weak fault characteristic signals hinder accurate fault state representation,we propose a novel feature extraction method that combines the Flexible Analytic Wavelet Transform(FAWT)with Nonlinear Quantum Permutation ***,leveraging fractional orders and arbitrary scaling and translation factors,exhibits superior translational invariance and adjustable fundamental oscillatory *** flexibility enables FAWT to provide well-suited wavelet shapes,effectively matching subtle fault components and avoiding performance degradation associated with fixed frequency partitioning and low-oscillation bases in detecting weak *** our approach,gearbox vibration signals undergo FAWT to obtain *** theory is then introduced into permutation entropy to propose Nonlinear Quantum Permutation Entropy,a feature that more accurately characterizes the operational state of vibration simulation *** nonlinear quantum permutation entropy extracted from sub-bands is utilized to characterize the operating state of rotating machinery.A comprehensive analysis of vibration signals from rolling bearings and gearboxes validates the feasibility of the proposed *** assessments with parameters derived from traditional permutation entropy,sample entropy,wavelet transform(WT),and empirical mode decomposition(EMD)underscore the superior effectiveness of this approach in fault detection and classification for rotating machinery.

关键词： Rotating machinery quantum theory nonlinear quantum permutation entropy Flexible Analytic Wavelet Transform(FAWT) feature extraction

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Heterointerface Engineering-Induced Oxygen Defects for the Manganese Dissolution Inhibition in Aqueous Zinc Ion Batteries

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Energy & Environmental Materials 2024年第3期7卷 112-122页

作者： Wentao Qu Yong Cai Baohui Chen Ming Zhang Hunan Provincial key laboratory of Low-Dimensional Structural Physics&devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&key laboratory for Micro-/Nano-Optoelectronic devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China state key laboratory of Disaster Prevention&Reduction for Power Grid Transmission and Distribution Equipment(Hunan Electric Power Corporation Disaster Prevention and Reduction Center) Changsha 410007China

Manganese-based material is a prospective cathode material for aqueous zinc ion batteries(ZIBs)by virtue of its high theoretical capacity,high operating voltage,and low ***,the manganese dissolution during the electrochemical reaction causes its electrochemical cycling stability to be *** this work,heterointerface engineering-induced oxygen defects are introduced into heterostructure MnO_(2)(δa-MnO_(2))by in situ electrochemical activation to inhibit manganese dissolution for aqueous zinc ion ***,the heterointerface between the disordered amorphous and the crystalline MnO_(2)ofδa-MnO_(2)is decisive for the formation of oxygen *** the experimental results indicate that the manganese dissolution ofδa-MnO_(2)is considerably inhibited during the charge/discharge *** analysis indicates that the oxygen defect regulates the electronic and band structure and the Mn-O bonding state of the electrode material,thereby promoting electron transport kinetics as well as inhibiting Mn ***,the capacity ofδa-MnO_(2)does not degrade after 100 cycles at a current density of 0.5 Ag^(-1)and also 91%capacity retention after 500cycles at 1 Ag^(-1).This study provides a promising insight into the development of high-performance manganese-based cathode materials through a facile and low-cost strategy.

关键词： electrochemical activation heterointerface manganese dissolution inhibition oxygen defects zinc ion batteries

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Nearly degenerate ground states of a checkerboard antiferromagnet and their bosonic interpretation

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Science china(Physics,Mechanics & Astronomy) 2024年第1期67卷 84-89页

作者： Haiyuan Zou Fan Yang Wei Ku key laboratory of Polar Materials and devices(MOE) School of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241China Department of Physics Beijing Institute of TechnologyBeijing 100081China Tsung-Dao Lee Institute Shanghai 200240China key laboratory of Artificial Structures and Quantum Control(Ministry of Education) Shanghai 200240China Shanghai Branch Hefei National LaboratoryShanghai 201315China

The spin-1/2 model system with antiferromagnetic(AF) couplings on a J1-J2checkerboard lattice, known as the planar pyrochlore model, is strongly frustrated and associated with a two-to-one dimensional crossover. Using the Projected Entangled Simplex states tensor network ansatz, we identify a large number of nearly degenerate states in the frustrated region(J_(1)state to be the ground state at J_(1)≤J_(2), while various 1D AF correlated states take over the rest. We verify the stability of the VBS state against nematic perturbation. The corresponding bosonic picture provides an intuitive understanding of the low-energy physics. Particularly, it predicts weaker VBS states in the easy-plane limit, which we confirm numerically. Our results clarify the most essential ground state properties of this interesting system and demonstrate the usefulness of bosonic picture in dealing with frustrated magnetism.

关键词： tensor networks frustrated magnetism dimensional crossover degenerate states

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Two-dimensional materials for future information technology: status and prospects

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Science china(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of electronic Science and Engineering Nanjing University School of integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications state key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and key Lab of Quantum Materials and devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory state key laboratory of integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University state key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of Materials for integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic Materials and devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum state Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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