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面向个性化健康管理的柔性自供能生物诊疗电子器件

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Science Bulletin 2024年第14期69卷 2289-2306页

作者：姚光甘兴羿林媛 School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 610054China state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of ChinaChengdu 610054China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of ChinaShenzhen 518110China Medico-Engineering Cooperation on Applied Medicine Research Center University of Electronic Science and Technology of ChinaChengdu 610054China

Flexible self-powered bioelectronics(FSPBs),incorporating flexible electronic features in biomedical applications,have revolutionized the human–machine interface since they hold the potential to offer natural and seamless human interactions while overcoming the limitations of battery-dependent power ***,as biosensors or actuators,FSPBs can dynamically monitor physiological signals to reveal real-time health abnormalities and provide timely and precise ***,FSPBs are increasingly shaping the landscape of health monitoring and disease treatment,weaving a sophisticated and personalized bond between humans and health ***,we examine the recent advanced progress of FSPBs in developing working mechanisms,design strategies,and structural configurations toward personalized health management,emphasizing its role in clinical medical scenarios from biophysical/biochemical sensors for sensing diagnosis to robust/biodegradable actuators for intervention *** perspectives on the challenges and opportunities in emerging multifunctional FSPBs for the next-generation health management systems are also forecasted.

关键词： Flexible bioelectronics Self-powered Sensing diagnosis Intervention therapy Health management

Metal–organic framework wafer enabled fast response radiation detection with ultra-low dark current

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Nano Research 2024年第4期17卷 2988-2993页

作者： Meng Xu Jianxi Liu Wei Wu Yang Chen Donghao Ma Sixin Chen Wanqi Jie Menghua Zhu Yadong Xu state key laboratory of Solidification Processing MIIT Key Laboratory of Radiation Detection Materials and Devices&School of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’an 710072China

Semiconductive metal–organic frameworks(MOFs)have attracted great interest for the electronic ***,dark currents of present hybrid organic–inorganic materials are 1000–10,000 times higher than those of commercial inorganic detectors,leading to poor charge ***,we demonstrate a ZIF-8(Zn(mim)_(2),mim=2-methylimidazolate)wafer with ultra-low dark current of 1.27 pA·mm^(-2) under high electric fields of 322 V·mm^(-1).The isostatic pressing preparation process provides ZIF-8 wafers with good ***,the presence of redox-active metals and small spatial separation between components promotes the charge *** ZIF-8-based semiconductor detector shows promising X-ray detection sensitivity of 70.82μC·Gy^(-1)·cm^(-2) with low doses exposures,contributing to superior X-ray imaging capability with a relatively high spatial resolution of 1.2 lp·mm^(-1).Simultaneously,good peak discrimination with the energy resolution of~43.78%is disclosed when the detector is illuminated by uncollimated 241Am@5.48 MeVα-*** results provide a broad prospect of MOFs for future radiation detection applications.

关键词： MOFs lead-free α-particles X-ray detection and imaging dark current fast response

Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

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Chinese Physics B 2024年第1期33卷 164-169页

作者：黄盼盼张有禄胡凯齐静波张岱南程亮 School of electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of ChinaChengdu 611731China School of Physics University of Electronic Science and Technology of ChinaChengdu 611731China

We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated *** experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith *** carrier recombination process is mainly dominated by defect-assisted Auger processes and defect *** firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),***,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay *** results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.

关键词： GeSn thin film time-resolved THz spectroscopy ultrafast dynamics carrier recombination

High performance wide bandgap perovskite solar cell with low V_(OC) deficit less than 0.4 V

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Journal of Energy Chemistry 2024年第4期91卷 313-322页

作者： Haikuo Guo Fuhua Hou Xuli Ning Xiaoqi Ren Haoran Yang Rui Liu Tiantian Li Chengjun Zhu Ying Zhao Wei Li Xiaodan Zhang School of Physical Science and Technology Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials at Universities of Inner Mongolia Autonomous RegionInner Mongolia UniversityHohhot 010021Inner MongoliaChina Institute of Photoelectronic thin Film devices and Technology of Nankai University Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinSolar Energy Research Center of Nankai UniversityTianjin 300350China state key laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430000HubeiChina

Wide bandgap perovskite solar cells(PSCs)have attracted significant attention because they can be applied to the top cells of tandem solar ***,high open-circuit voltage(V_(OC))deficit(>0.4 V)result from poor crystallization and high non-radiative recombination losses become a serious limitation in the pursuit of high ***,the relevance between different Pbl_(2)proportions and performance parameters are revealed through analysis of surface morphology,residual stress,and *** increase of Pbl_(2)proportion promotes crystal growth and reduces the work function of the perovskite film surface and promotes the energy level alignment with the carrier transport layer,which decreased the V_(OC)***,residual PbI_(2)exacerbated the stress level of perovskite film,and the resulting lattice disorder deteriorated the photostability of the ***,after the synergistic passivation of residual PbI_(2)and PEAI,the V_(OC)achieves 1.266 V and V_(OC)deficit is less than 0.4 V,the record value in wide bandgap PSCs.

关键词： Pb management Perovskite solar cell Strain Wide bandgap Stability

50-110 GHz,high isolation,and high-power linearity single-pole double-throw switch utilizing 100-nm GaN HEMT technology

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The Journal of china Universities of Posts and Telecommunications 2024年第2期31卷 38-43,71页

作者： Han Qunfei Hu Sanming Zhang Tianyu Chen Qing Shen Yizhu Wang Weibo Tao Hongqi School of Information Science and Engineering Southeast UniversityNanjing 210096China Nanjing electronic devices Institute Nanjing 210016China state key laboratory of Millimeter Waves Southeast UniversityNanjing 210096China

This article presents the design and performance of a single-pole double-throw(SPDT)switch operating in 50-110 *** switch is fabricated in a 100-nm GaN high-electron-mobility transistors(HEMT)*** realize high-power capability,the dimensions of GaN HEMTs are selected by simulation *** enhance the isolation,an improved structure of shunt HEMT with two ground holes is *** extend the operation bandwidth,the SPDT switch with multi-section resonant units is proposed and *** verify the SPDT switch design,a prototype operating in 50-110 GHz is *** measured results show that the fabricated SPDT switch monolithic microwave integrated circuit(MMIC)achieves an input 1 dB compression point(P_(1dB))of 38 dBm at 94 GHz,and isolation within the range of 33 dB to 54 dB in 50-110 *** insertion loss of the switch is less than 2.1 dB,while the voltage standing wave ratios(VSWR)of the input port and output port are both less than 1.8 in the operation *** on the measured results,the presented SPDT switch MMIC demonstrates high power capability and high isolation compared with other reported millimeter-wave SPDT MMIC designs.

关键词： GaN high-electron-mobility transistors(HEMT) millimeter-wave single-pole double-throw(SPDT) switch

Enhancing blocking temperature using inverse hydrogen bonds for non-radical bridged dimeric Dy(Ⅲ)single-molecule magnets

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Science china Chemistry 2024年第10期67卷 3328-3338页

作者： Peng-Bo Jin Qian-Cheng Luo Ye-Ye Liu Yan-Zhen Zheng Frontier Institute of Science and Technology State Key Laboratory of Electrical Insulation and Power EquipmentMOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed MatterXi’an Key Laboratory of Electronic Devices and Material Chemistry and School of ChemistryXi’an Jiaotong UniversityXi’an 710054China

Single-molecule magnets(SMMs)are a kind of nanosized magnetic materials that are capable of storing massive bytes of *** coupling the spin centers in a proper manner is a usual approach to promote the working temperature(or blocking temperature)for *** delocalized radicals have been widely employed to accomplish this ***,we show a new manner by using weak but multiple B–H^(δ-)···Dy^(3+)inverse hydrogen bonding(IHB)interactions to control the magnetic couplings in a series of dimeric dysprosiacaborane *** approach leads to a record high T_(B)^(100s)of 10 K among non-radical bridged dimeric SMMs,which is mainly ascribed to strong ferromagnetic coupling(4.38 cm^(-1))and the proper alignment of the magnetic principle axes of the adjacent dysprosium(Ⅲ)*** verifying by theoretical calculations,these results demonstrate that IHB interactions can be used to construct strong axial ferromagnetic coupling and enhancing magnetic blocking temperature for SMMs.

关键词： single-molecule magnets carborane dysprosium ferromagnetic coupling inverse hydrogen bond

Interface optimization and defects suppression via Na F introduction enable efficient flexible Sb_(2)Se_(3) thin-film solar cells

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Journal of Energy Chemistry 2024年第3期90卷 165-175,I0006页

作者： Mingdong Chen Muhammad Ishaq Donglou Ren Hongli Ma Zhenghua Su Ping Fan David Le Coq Xianghua Zhang Guangxing Liang Shuo Chen Shenzhen key laboratory of Advanced thin films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060GuangdongChina state key laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures MOE Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning 530004GuangxiChina CNRS ISCR(Institut des Sciences Chimiques de Rennes)UMR 6226Universitéde RennesRennes F-35000France

Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible ***,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact ***,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil *** NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin ***,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and *** a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 *** flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.

关键词： Sb_(2)Se_(3) Flexible solar cells NaF intermediate layer Interface optimization Defects suppression

Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

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Frontiers of physics 2024年第2期19卷 105-130页

作者： Xiulian Fan Ruifeng Xin Li Li Bo Zhang Cheng Li Xilong Zhou Huanzhi Chen Hongyan Zhang Fangping OuYang Yu Zhou School of Physics and electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China Jincheng Research Institute of Opto-mechatronics Industry Jincheng 048000China Shanxi key laboratory of Advanced Semiconductor Optoelectronic devices and integrated Systems Jincheng 048000China School of Physical Science and Technology Xinjiang UniversityUrumqi 830046China state key laboratory of Powder Metallurgy Central South UniversityChangsha 410083China

Two-dimensional transition metal dichalcogenides(TMDs)exhibit promising application prospects in the domains of electronic devices,optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin−orbit coupling ***-based chalcogenides with narrow or even zero bandgap,covering from semiconductors to metallic materials,have considerable potential for wide-band photodetection and two-dimensional ***,the preparation of 2D CrX_(n)(X=S,Se,Te)nanosheets primarily relies on chemical vapor deposition(CVD)and molecule beam epitaxy(MBE),which enable the production of high-quality large-area *** review article focuses on recent progress of 2D Cr-based chalcogenides,including unique crystal structure of the CrX_(n)system,phase-controlled synthesis,and heterojunction ***,a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrXn is ***,this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies,optoelectronics devices,and spintronic devices while providing further insights.

关键词： physical properties two-dimensional materials Cr-based chalcogenide controlled synthesis heterojunction eletronic and optoelectronic devices

Enhanced thermoelectric performance enabled by compositing ZrO_(2)in n-type SiGe alloy with low thermal conductivity

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Rare Metals 2024年第3期43卷 1167-1176页

作者： Meng-Fei Wang Hua-Jun Lai Ji-Sheng Liang Jun-Liang Chen Wang-Yang Ding Qi Zhou Ying Peng Cheng-Yan Liu Lei Miao Guangxi key laboratory for Relativity Astrophysics State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite StructuresSchool of Physical Science and TechnologyGuangxi UniversityNanning530004China Guangxi Academy of Sciences Nanning530007China key laboratory of Information Material Engineering Research Center of Electronic Information Materials and DevicesGuilin University of Electronic TechnologyMinistry of EducationGuilin541004China Guangxi key laboratory of Precision Navigation Technology and Application School of Information and CommunicationGuilin University of Electronic TechnologyGuilin541004China

SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long ***,the intrinsically high thermal conductivity of Si-based materials also results in poor TE *** this investigation,a zirconia(ZrO_(2))composite strategy was applied to an n-type SiGe alloy,tremendously elevating its TE *** mechanical alloying and spark plasma sintering(SPS)processes,the ZrO_(2)induced the formation of nanopores in the SiGe matrix via phosphorus ***,such increase in porosity enhanced the phonon scattering and dramatically suppressed lattice thermal conductivity,from 2.83 to 1.59 W·m^(-1)·K^(-1)at 873 ***,reduced phosphorus doping led to an increase in Seebeck coefficients and a relatively minor decrease in electrical conductivity,The power factor didn't deteriorate significantly,either,as its maximum of~3.43 mW·m^(-1-)K^(-2)was achieved at 873 K with(Si_(0.8)Ge_(0.2))_(0.097)P_(0.03)(ZrO_(2))_(0.003).In short,a peak figure of merit(ZT)of~1.27 at 873 K and an average ZT~0.7 from 323 to 873 K were *** study demonstrates that the electrical and thermal transportation of SiGe material can be synergistically tuned by compositing ZrO_(2),illustrating a novel strategy to optimize the TE properties of bulk materials.

关键词： Thermoelectric SiGe alloy ZrO2 composting P element adsorption nanopores