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Science China(Information Sciences) 2024年第9期67卷 348-349页

作者： Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO Changsha semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits) Hunan University Hunan San'an semiconductor Co. Ltd. Songshan Lake Materials Laboratory

GaN outperforms silicon in applications with high power and high frequency owing to the high critical electric field and high electron mobility. However, the hole-based GaN transistors which are pivotal to the GaN-based CMOS circuits and high-side switching are still under investigation. Two-dimensional hole gas(2DHG) has been used to demonstrate the p-channel GaN field-effect-transistors(FETs) [1–5].

关键词： MOSFETS

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

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Energy & Environmental Materials 2024年第1期7卷 168-175页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'an 710071China Guangzhou Wide Bandgap semiconductor Innovation Center Guangzhou institute of technologyXidian UniversityGuangzhou 510555China Qinghai Huanghe Hydropower Development CO. LTD.Xining810008China

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)*** a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)*** calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)***,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation ***,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr_(3) low temperature two-step sequential deposition

Microsphere-assisted hyperspectral imaging:super-resolution,non-destructive metrology for semiconductor devices

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Light(Science & Applications) 2024年第6期13卷 1098-1111页

作者： Jangryul Park Youngsun Choi Soonyang Kwon Youngjun Lee Jiwoong Kim Jae-joon Kim Jihye Lee Jeongho Ahn Hidong Kwak Yusin Yang Taeyong Jo Myungjun Lee Kwangrak Kim Metrology and Inspection Equipment R&D Team Mechatronics ResearchSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea Process Development Department DRAM Process Development TeamSemiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea Process Development Department Semiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea

As semiconductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)becomes increasingly *** test element group(TEG)measurements are becoming inadequate for representing the fine,repetitive patterns in cell *** non-destructive metrology technologies like optical critical dimension(OCD)are limited due to their large spot diameter of approximately 25μm,which impedes their efficacy for detailed in-cell structural ***,there is a pressing need for small-spot and non-destructive metrology *** address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with *** microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6μm×5.6μ*** approach effectively breaks the diffraction limit,significantly enhancing the magnification of the *** MAHSI system incorporating hyperspectral imaging with a wavelength range of 400–790 nm,enables the capture of the reflection spectrum at each camera *** achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4 nm/pixel and the magnification is *** MAHSI system enables measurement of local uniformity in critical areas like corners and edges of DRAM cell blocks,areas previously challenging to inspect with conventional OCD *** our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in complex 3D structures of semiconductor devices.

关键词： metrology resolution enable

Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

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Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar Technology Co. Ltd.Xi'an710071China

Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

Mitigation of Deane and Hamill phenomenon in gallium nitride high-voltage power supply for electric propulsion system application

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High Voltage 2024年第1期9卷 252-265页

作者： Minghai Dong Hui Li Shan Yin Kye Yak See Yingzhe Wu Xiong Xin School of Aeronautics&Astronautics University of Electronic Science and Technology of ChinaChengduChina School of Electrical&Electronic Engineering Nanyang Technological UniversitySingaporeSingapore School of Automation Engineering University of Electronic Science and Technology of ChinaChengduChina Innoscience(Shenzhen)semiconductor Co.ltd. ShenzhenChina

The step-up resonant converters are widely adopted to provide high voltage in kV-level for electric propulsion system due to their high efficiency,low mass,modularisation,and high-power *** bipolar Cockcroft-Walton voltage multiplier(BiCWVM)is a major circuit that steps up the voltage in the resonant ***,the diode nonlinearity in BiCWVM can introduce self-sustained quasi-periodic oscillations in the voltage and current waveforms,which is commonly known as the Deane and Hamill(DH)*** oscillation can lead to higher magnetic loss and control failure,and it is more likely to present in the gallium nitride-based converter due to the highfrequency *** authors aim to investigate and mitigate the DH phenomenon systematically so that proper mitigation can be *** facilitate the investigation,the circuit before the BiCWVM in the converter is derived and modelled as a voltage source v_(m)and a series inductor L_(sy).Also,the reverse recovery process of the diode in the BiCWVM can be represented by a piecewise-linear(PWL)model,with the simplified circuit and PWL model,the relationship between voltage and current under different operating conditions can be determined with *** relationship allows to understand the mechanism of diode reverse recovery in BiCWVM that leads to DH ***,a hybrid-/full-silicon carbide(SiC)design is proposed to mitigate the DH phenomenon,which is verified experimentally for a 300-kHz,5-W,20-V/1.5-kV GaN-based step-up resonant converter.

关键词： power resonant high

Hollow-structured all-silicon terahertz metasurface supporting quasi-bound states in the continuum for refractive index based Auramine O concentration sensing

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Photonics Research 2024年第7期12卷 1574-1582页

作者： XIN TANG HAODUO JIA LANBIN LI MING LI DAI WU KUI ZHOU PENG LI WEIJUN WANG JITAO LI DINGYU YANG College of Optoelectronic Engineering Chengdu University of Information TechnologyChengdu 610225China Institute of Applied Electronics China Academy of Engineering PhysicsMianyang 621000China School of Precision Instruments and Opto-Electronics Engineering Tianjin UniversityTianjin 300072China Guizhou Zhenhua Fengguang semiconductor Co. Ltd.Guiyang 550000China Chengdu Huanyuxin Technology Co. Ltd.Chengdu 610095China

Quasi-bound states in the continuum (QBIC),with exceptionally high-Q factors and the local field enhancement effect,have found potential applications in matter *** the QBIC mechanism into terahertz(THz) metasurfaces can significantly enhance the interaction between incident THz waves and matter,providing a feasible platform for the detection of biochemical ***,most experimental studies on terahertz QBIC metasurfaces utilize metallic *** contrast,research on terahertz all-dielectric QBIC metasurfaces generally remains at the simulation stage due to the high fabrication process requirements,and transitioning to the experimental stage still poses many *** this paper,a hollow-structured all-silicon metasurface supporting THz QBIC is *** resonance of THz QBIC is excited via a simple hollow structure and observed in *** and experimental results demonstrated that the designed THz QBIC metasurface can achieve sensing of Auramine ***,it is the first study,to our knowledge,to employ a metasurface to sense Auramine ***,the sensing performance maintains good stability under different humidity and temperature *** study provides new references and insights for the design and implementation of THz QBIC,and also opens a new pathway for the detection of Auramine O.

关键词： supporting continuum refractive

Principal Model Analysis Based on Bagging PLS and PCA and Its Application in Financial Statement Fraud

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Journal of Systems Science and Information 2024年第2期12卷 212-228页

作者： Xiao LIANG Qiwei XIE Chunyan LUO Liang TANG Yi SUN School of Economics and Management Beijing University of TechnologyBeijing 100124China Shanghai Tongtu semiconductor Technology Co. LtdShanghai 210203China School of Finance Anhui University of Finance&EconomicsBengbu 233000China

Motivated by the Bagging Partial Least Squares(Bagging PLS)and Principal Component Analysis(PCA)algorithms,a novel approach known as Principal Model Analysis(PMA)method is introduced in this *** the proposed PMA algorithm,the PCA and the Bagging PLS are *** this method,multiple PLS models are trained on sub-training sets,derived from the training set using the random sampling with replacement *** regression coefficients of all the sub-PLS models are fused in a joint regression coefficient *** final projection direction is then estimated by performing the PCA on the joint regression coefficient ***,the proposed PMA method is compared with other traditional dimension reduction methods,such as PLS,Bagging PLS,Linear discriminant analysis(LDA)and *** results on six public datasets demonstrate that our proposed method consistently outperforms other approaches in terms of classification performance and exhibits greater ***,it is employed in the application of financial statement fraud *** and other five algorithms are utilized to financial statement fraud which concerned by the academic community,and the results indicate that the classification of PMA surpassed that of the other methods.

关键词： principal model analysis partial least squares principal component analysis dimension reduction ensemble learning financial statement fraud detection

Transfer-free chemical vapor deposition graphene for nitride epitaxy: challenges, current status and future outlook

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Science China Chemistry 2024年第3期67卷 824-840页

作者： Xiang Gao Senlin Li Jingfeng Bi Kaixuan Zhou Meng Li Zhongfan Liu Jingyu Sun College of Energy Soochow Institute for Energy and Materials InnovationsSUDA-BGI Collaborative Innovation CenterKey Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhou 215006China Beijing Graphene Institute Beijing 100095China Xiamen Silan Advanced Compound semiconductor Co.ltd. Xiamen 361026China

Graphene, a two-dimensional material with outstanding electrical and mechanical properties, has attracted considerable attention in the field of semiconductor technologies due to its potential use as a buffer layer for the epitaxial Ⅲ-nitride growth. In recent years, significant progress has been made in the chemical vapor deposition growth of graphene on various insulating substrates for the nitride epitaxy, which offers a facile, inexpensive, and easily scalable methodology. However, certain challenges are still present in the form of producing high-quality graphene and achieving optimal interface compatibility with Ⅲ-nitride *** this review, we provide an overview of the bottlenecks associated with the transferred graphene fabrication techniques and the state-of-the-art techniques for the transfer-free graphene growth. The present contribution highlights the current progress in the transfer-free graphene growth on different insulating substrates, including sapphire, quartz, SiO_(2)/Si, and discusses the potential applications of transfer-free graphene in the Ⅲ-nitride epitaxy. Finally, it includes the prospects of the transfer-free graphene growth for the Ⅲ-nitride epitaxy and the challenges that should be overcome to realize its full potential in this field.

关键词： Transfer-free chemical vapor deposition graphene for nitride epitaxy challenges current status and future outlook graphene

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

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Journal of semiconductors 2024年第7期45卷 70-75页

作者： Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang State Key Laboratory of High-Power semiconductor Laser School of PhysicsChangchun University of Science and TechnologyChangchun 130022China Nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Suzhou Powerhouse Electronics Technology Co. Ltd.Suzhou 215123China

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

关键词： AlGaN/GaN MIS HEMTs gate dielectric layer depletion-mode gate reliability I_(on)/I_(off)ratio

An in-situ self-etching enabled high-power electrode for aqueous zinc-ion batteries

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Journal of Energy Chemistry 2024年第1期88卷 399-408,I0009页

作者： Shuang Hou Dingtao Ma Yanyi Wang Kefeng Ouyang Sicheng Shen Hongwei Mi Lingzhi Zhao Peixin Zhang College of Chemistry and Environmental Engineering Shenzhen UniversityShenzhen 518060GuangdongChina Guangdong Provincial Engineering Technology Research Center for Low Carbon and Advanced Energy Materials School of Semiconductor Science and TechnologySouth China Normal UniversityFoshan 528225GuangdongChina SCNU Qingyuan Institute of Science and Technology Innovation Co. Ltd.Qingyuan 511517GuangdongChina

Sluggish storage kinetics is considered as the main bottleneck of cathode materials for fast-charging aqueous zinc-ion batteries(AZIBs).In this report,we propose a novel in-situ self-etching strategy to unlock the Palm tree-like vanadium oxide/carbon nanofiber membrane(P-VO/C)as a robust freestanding *** investigations including the finite element simulation,in-situ X-ray diffraction,and in-situ electrochemical impedance spectroscopy disclosed it an electrochemically induced phase transformation mechanism from VO to layered Zn_(x)V_(2)O_5·nH_(2)O,as well as superior storage kinetics with ultrahigh pseudocapacitive *** demonstrated,such electrode can remain a specific capacity of 285 mA h g^(-1)after 100 cycles at 1 A g^(-1),144.4 mA h g^(-1)after 1500 cycles at 30 A g^(-1),and even 97 mA h g^(-1)after 3000 cycles at 60 A g^(-1),***,an impressive power density of 78.9 kW kg^(-1)at the super-high current density of 100 A g^(-1)also can be *** design concept of in-situ self-etching free-standing electrode can provide a brand-new insight into extending the pseudocapacitive storage limit,so as to promote the development of high-power energy storage devices including but not limited to AZIBs.

关键词： In-situ self-etching Free-standing electrode Pseudocapacitive storage High-power Zinc-ion batteries