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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

nano Research 2024年第7期17卷 6575-6581页

作者： Jennifer Koch Carla Cirillo Sebastiano Battisti Leon Ruf Zahra Makhdoumi Kakhaki Alessandro Paghi Armen Gulian Serafim Teknowijoyo Giorgio De Simoni Francesco Giazotto Carmine Attanasio Elke Scheer Angelo Di Bernardo Department of Physics University of KonstanzUniversitätsstraße 1078464 KonstanzGermany cnr-Spin c/o Universitàdegli Studi di Salernovia Giovanni Paolo II 13284084 Fisciano(SA)Italy NEST Istituto Nanoscienze-CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127 PisaItaly Dipartimento di Fisica“E.R.Caianiello” Universitàdegli Studi di SalernoVia Giovanni Paolo II 13284084 Fisciano(SA)Italy Advanced Physics Laboratory Institute for Quantum StudiesChapman UniversityBurtonsvilleMD 20866USA

The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental and technological *** gain a deeper understanding of this effect and develop superconducting technologies based on it,the material and physical parameters crucial for the GCS effect must be ***-down fabrication protocols should also be optimized to increase device scalability,although studies suggest that top-down fabricated devices are more resilient to show a ***,we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the noncentrosymmetric superconductor niobium rhenium with varying ratios of the constituents(NbRe).Unlike other devices previously reported and made with a top-down approach,our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific *** observations pave the way for the realization of top-down-made GCS devices with high *** results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges,which can be in turn modified by the fabrication process,are crucial for a GCS observation,providing therefore also important insights into the physics underlying the GCS effect.

关键词： superconductivity non-centrosymmetric superconductors superconducting devices gated devices gate-controlled supercurrent top-down fabrication

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Erratum to:Tribological behaviour of Ti_(3)C_(2)T_(x)nano-sheets:Substrate-dependent tribo-chemical reactions

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Friction 2024年第7期12卷 1618-1619页

作者： Alberto ROTA Nicolas BELLINA Bo WANG Andreas ROSENKRANZ Dipartimento di Scienze Fisiche Informatiche e MatematicheUniversitàdi Modena e Reggio EmiliaModena 41125Italy cnr-istituto di nanoscienze Centro S3Modena 41125Italy Centro Interdipartimentale per la Ricerca Applicata e i Servizi nel settore della Meccanica Avanzata e della Motoristica Universitàdi Modena e Reggio EmiliaModena 41125Italy Key Laboratory of Marine New Materials and Related Technology Zhejiang Key Laboratory of Marine Materials and Protection TechnologyNingbo Institute of Material Technology&EngineeringChinese Academy of SciencesNingbo 315201China Department of Chemical Engineering Biotechnology and MaterialsUniversity of ChileSantiago 8370456Chile

Erratum to Alberto Rota,Nicolas Bellina,Bo Wang&Andreas *** behaviour of Ti_(3)C_(2)T_(x)nano-sheets:Substratedependent tribo-chemical *** 11(8):1522–1533(2023).

关键词： Friction behaviour chemical

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Spatiotemporal oxygen dynamics in young leaves reveal cyclic hypoxia in plants

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Molecular Plant 2024年第3期17卷 377-394页

作者： Paolo M.Triozzi Luca Brunello Giacomo Novi Gianmarco Ferri Francesco Cardarelli Elena Loreti Mariano Perales Pierdomenico Perata PlantLab Center of Plant SciencesSant'Anna School of Advanced Studies56010 PisaItaly Centro de Biotecnologia y Genomica de Plantas Universidad Politecnica de Madrid(UPM)-Instituto Nacional de Investigacion y Tecnologia Agraria y Alimentaria(INIA-CSIC)Campus de Montegancedo UPMPozuelo de Alarcon28223 MadridSpain Fondazione Pisana per la Scienza 56017 PisaItaly Laboratorio NEST Scuola Normale SuperioreIstituto Nanoscienze-CNRPiazza S.Silvestro1256127 PisaItaly institute of Agricultural Biology and Biotechnology National Research Council56124 PisaItaly Departamento de Biotecnologia-Biologia Vegetal Escuela Tecnica Superior de Ingenieria AgronomicaAlimentaria y de BiosistemasUniversidad Politecnica de Madrid(UPM)28040 Madrid.Spain

Oxygen is essential for plant growth and *** occurs in plants due to limited oxygen avail-abilityfollowing adverse environmental conditions as well inhypoxic niches in otherwisenormoxic ***,the existence and functional integration of spatiotemporal oxygen dynamics with plant development remains *** animal systems dynamic fluctuations in oxygen availability are known as cyclic *** this study,we demonstrate that cyclic fluctuations in internal oxygen levels occur in young emerging leaves of Arabidopsis *** hypoxia in plants is based on a mechanism requiring the ETHYLENE RESPONSE FACTORS type VII(ERFVII)that are central components of the oxygen-sensing machinery in *** ERFVll-dependent mechanism allows precise adjustment of leaf growth in response to carbon status and oxygen availability within plant *** study thus establishes a functional connection between internal spatiotemporal oxygen dynamics and developmental processes of plants.

关键词： Arabidopsis hypoxia cyclic hypoxia leaf development oxygen-sensing mechanism ERFVII

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Erratum to:Superlubricity of epitaxial monolayer WS_(2)on graphene

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nano Research 2024年第6期17卷 5754-5754页

作者： Holger Büch Antonio Rossi Stiven Forti Domenica Convertino Valentina Tozzini Camilla Coletti Center for nanotechnology Innovation@NEST Istituto Italiano di TecnologiaPiazza S.Silvestro 1256127 PisaItaly NEST Istituto Nanoscienze–CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127 PisaItaly Graphene Labs Istituto Italiano di TecnologiaVia Morego 3016163 GenovaItaly

The article"Superlubricity of epitaxial monolayer WS2 on graphene",written by Holger Büch,Antonio Rossi,Stiven Forti,Domenica Convertino,Valentina Tozzini,and Camilla Coletti,was originally published electronically on the publisher’s internet portal(currently SpringerLink)on June 18th 2018 without open *** the author(s)’decision to opt for Open Choice the copyright of the article changed in August 2018 to©The Author(s)2018 and the article is forthwith distributed under the terms of the Creative Commons Attribution 4.0 International License(http://***/licenses/by/4.0/),which permits use,duplication,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons license and indicate if changes were made.

关键词： monolayer epitaxial license

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Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

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Light(Science & Applications) 2020年第1期9卷 184-195页

作者： Eva A.A.Pogna Mahdi Asgari Valentina Zannier Lucia Sorba Leonardo Viti Miriam S.Vitiello NEST CNR-Istituto Nanoscienze and Scuola Normale SuperiorePiazza San Silvestro 1256127 PisaItaly

Semiconductor nanowire field-effect transistors represent a promising platform for the development of roomtemperature(RT)terahertz(THz)frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers(100 V/W).nano-engineering an NW photodetector combining high sensitivity with high speed(subns)in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics,but this requires a clear understanding of the origin of the *** electrical and optical measurements,however,cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously ***,we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution(35 nm)THz photocurrent *** coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy(s-SNOM)and monitoring both electrical and optical readouts,we simultaneously measure transport and scattering *** spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping,therefore providing a route to engineer photo-responses by design.

关键词： scattering quantum frontier

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Spatial coherence of electrically pumped random terahertz lasers

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Photonics Research 2022年第2期10卷 524-534页

作者： Eva A.A.Pogna Alessandra Di Gaspare Kimberly Reichel Chiara Liberatore Harvey E.Beere David A.Ritchie Miriam S.Vitiello NEST CNR-Istituto Nanoscienze-Scuola Normale Superiore56127 PisaItaly Cavendish Laboratory University of CambridgeCambridge CB3 OHEUK

Light sources with high radiance and tailored coherence properties are highly desirable for imaging applications in the mid-infrared and terahertz(THz) spectral regions, which host a large variety of molecular absorptions and distinctive fingerprints to be exploited for sensing and tomography. Here, we characterize the spatial coherence of random multimode THz quantum cascade lasers(QCLs) emitting > m W optical power per mode and showing low divergence(10°–30°), performing a modified Young’s double-slit experiment. Partial spatial coherence values ranging between 0.16 and 0.34 are retrieved, depending on the specific degree of disorder. These values are significantly lower than those(0.82) of conventional Fabry–Perot THz QCLs exploiting an identical active region quantum design. We then incorporate the devised low spatial coherence random lasers into a confocal imaging system with micrometer spatial resolution and demonstrate notable imaging performances, at THz frequencies,against spatial cross talk and speckles.

关键词： pumped random quantum

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Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene

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nano Research 2018年第2期11卷 864-873页

作者： Yuya Murata Tommaso Cavallucci Valentina Tozzini Niko Pavliček Leo Gross Gerhard Meyer Makoto Takamura Hiroki Hibino Fabio Beltram Stefan Heun NEST Istituto Nanoscienze-CNR and Scuola Normale Superiore Pisa Italy IBM Research-Zurich Rüschlikon Switzerland NTT Basic Research Laboratories Atsugi Kanagawa Japan

Si dangling bonds at the interface of quasi-free-standing monolayer graphene （QFMLG） are known to act as scattering centers that can severely affect carrier mobility Herein, we investigate the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/ spectroscopy （STM/STS）, atomic force microscopy （AFM）, and density functional theory （DFT） calculations. Two types of defects with different contrast were observed on a flat graphene terrace by STM and AFM; in particular, their STM contrast varied with the bias voltage. Moreover, these defects showed characteristic STS peaks at different energies, 1.1 and 1.4 eV. The comparison of the experimental data with the DFT calculations indicates that the defects with STS peak energies of 1.1 and 1.4 eV consist of clusters of three and four Si dangling bonds, respectively. The relevance of the present results for the optimization of graphene synthesis is discussed.

关键词： quasi-free-standingmonolayer graphene hydrogen intercalation carrier mobility scanning tunnelingmicroscopy scanning tunnelingspectroscop^atomic force microscop3~density functional theory

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Unraveling the mark of surface defects on a spinterface： The nitronyl nitroxide/TiO2（110） interface

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nano Research 2016年第11期9卷 3515-3527页

作者： Reza Kakavandi Arrigo Calzolari Yulia B. Borozdina Prince Ravat Thomas Chasse Martin Baumgarten M. Benedetta Casu Institute of Physical and Theoretical Chemistry University of Tubingen Auf der Morgenstelle 18 72076 Tubingen Germany cnr-nano istituto nanoscienze Centro S3 41125 Modena Italy Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany

Metal-free organic radicals are fascinating materials owing to their unique properties. Having a stable magnetic moment coupled to light elements makes these materials central to develop a large variety of applications. We investigated the magnetic spinterface coupling between the surface of a single rutile TiO2（110） crystal and a pyrene-based nitronyl nitroxide radical, using a combination of thickness-dependent X-ray photoelectron spectroscopy and ab initio calculations. The radicals were physisorbed, and their magnetic character was preserved on the （almost） ideal surface. The situation changed completely when the molecules interacted with a surface defect site upon adsorption. In this case, the reactivity of the defect site led to the quenching of the molecular magnetic moment. Our work elucidates the crucial role played by the surface defects and demonstrates that photoemission spectroscopy combined with density functional theory calculations can be used to shed light on the mechanisms governing complex interfaces, such as those between magnetic molecules and metal oxides.

关键词： organic spinterface photoemission spectroscop density functional theory calculations

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Low-temperature quantum transport in CVD-grown single crystal graphene

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nano Research 2016年第6期9卷 1823-1830页

作者： Shaohua Xiang Vaidotas Miseikis Luca Planat Stefano Guiducci Stefano Roddaro Camilla Coletti Fabio Beltram Stefan Heun NEST Istituto Nanoscienze--CNR and Scuola Normale Superiore Piazza San Silvestro 12 $6127 Pisa Italy Center for nanotechnology Innovation @NEST Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy

Chemical vapor deposition （CVD） is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11,000 cm2/（V.s） is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of 〉1 um, even at the charge neutrality point of the samples.

关键词： high-quality chemicalvapor deposition (CVD)-graphene low-temperaturemagnetotransport quantum Hall effect weak localization

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InAs nanowire superconducting tunnel junctions： Quasiparticle spectroscopy, thermometry, and nanorefrigeration

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nano Research 2017年第10期10卷 3468-3475页

作者： Jaakko Mastomaki Stefano Roddaro Mirko Rocci Valentina Zannier Daniele Ercolani Lucia Sorba Ilari J. Maasilta Nadia Ligato Antonio Fornieri Elia Strambini Francesco Giazotto NEST Scuola Normale Superiore and Istituto Nanoscienze-CNR Piazza S. Silvestro 12 I-55127 Pisa Italy nanoscience Center Department of Physics University of Jyvaskyla 40014 Jyvaskyla Finland

We demonstrate an original method based on controlled oxidation for creating high-quality tunnel junctions between superconducting A1 reservoirs and InAs semiconductor nanowires （NWs）. We show clean tunnel characteristics with a current suppression by 〉4 orders of magnitude for a junction bias well below the A1 gap of △0≈ 200 μeV. The experimental data agree well with the Bardeen- Cooper-Schrieffer theoretical expectations for a superconducting tunnel junction. The studied devices employ small-scale tunnel contacts functioning as thermometers as well as larger electrodes that provide proof-of-principle active cooling of the electron distribution in the NWs. A peak refrigeration of approximately δT = 10 mK is achieved at a bath temperature of Tbath≈ 250-350 mK for our prototype devices. This method introduces important perspectives for the investigation of the thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.

关键词： InAs nanowire superconducting tunnel junction thermometry nanorefrigeration

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