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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Nano Research 2024年第7期17卷 6575-6581页

作者： Jennifer Koch Carla Cirillo Sebastiano Battisti Leon Ruf Zahra Makhdoumi Kakhaki Alessandro Paghi Armen Gulian Serafim Teknowijoyo Giorgio De Simoni Francesco Giazotto Carmine Attanasio Elke Scheer Angelo Di Bernardo Department of Physics University of KonstanzUniversitätsstraße 1078464 KonstanzGermany cnr-Spin c/o Universitàdegli Studi di Salernovia Giovanni Paolo II 13284084 Fisciano(SA)Italy nest Istituto Nanoscienze-CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127 PisaItaly Dipartimento di Fisica“E.R.Caianiello” Universitàdegli Studi di SalernoVia Giovanni Paolo II 13284084 Fisciano(SA)Italy Advanced Physics Laboratory Institute for Quantum StudiesChapman UniversityBurtonsvilleMD 20866USA

The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental and technological *** gain a deeper understanding of this effect and develop superconducting technologies based on it,the material and physical parameters crucial for the GCS effect must be ***-down fabrication protocols should also be optimized to increase device scalability,although studies suggest that top-down fabricated devices are more resilient to show a ***,we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the noncentrosymmetric superconductor niobium rhenium with varying ratios of the constituents(NbRe).Unlike other devices previously reported and made with a top-down approach,our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific *** observations pave the way for the realization of top-down-made GCS devices with high *** results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges,which can be in turn modified by the fabrication process,are crucial for a GCS observation,providing therefore also important insights into the physics underlying the GCS effect.

关键词： superconductivity non-centrosymmetric superconductors superconducting devices gated devices gate-controlled supercurrent top-down fabrication

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Spatiotemporal oxygen dynamics in young leaves reveal cyclic hypoxia in plants

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Molecular Plant 2024年第3期17卷 377-394页

作者： Paolo M.Triozzi Luca Brunello Giacomo Novi Gianmarco Ferri Francesco Cardarelli Elena Loreti Mariano Perales Pierdomenico Perata PlantLab Center of Plant SciencesSant'Anna School of Advanced Studies56010 PisaItaly Centro de Biotecnologia y Genomica de Plantas Universidad Politecnica de Madrid(UPM)-Instituto Nacional de Investigacion y Tecnologia Agraria y Alimentaria(INIA-CSIC)Campus de Montegancedo UPMPozuelo de Alarcon28223 MadridSpain Fondazione Pisana per la Scienza 56017 PisaItaly Laboratorio nest Scuola Normale SuperioreIstituto Nanoscienze-CNRPiazza S.Silvestro1256127 PisaItaly institute of Agricultural Biology and Biotechnology National Research Council56124 PisaItaly Departamento de Biotecnologia-Biologia Vegetal Escuela Tecnica Superior de Ingenieria AgronomicaAlimentaria y de BiosistemasUniversidad Politecnica de Madrid(UPM)28040 Madrid.Spain

Oxygen is essential for plant growth and *** occurs in plants due to limited oxygen avail-abilityfollowing adverse environmental conditions as well inhypoxic niches in otherwisenormoxic ***,the existence and functional integration of spatiotemporal oxygen dynamics with plant development remains *** animal systems dynamic fluctuations in oxygen availability are known as cyclic *** this study,we demonstrate that cyclic fluctuations in internal oxygen levels occur in young emerging leaves of Arabidopsis *** hypoxia in plants is based on a mechanism requiring the ETHYLENE RESPONSE FACTORS type VII(ERFVII)that are central components of the oxygen-sensing machinery in *** ERFVll-dependent mechanism allows precise adjustment of leaf growth in response to carbon status and oxygen availability within plant *** study thus establishes a functional connection between internal spatiotemporal oxygen dynamics and developmental processes of plants.

关键词： Arabidopsis hypoxia cyclic hypoxia leaf development oxygen-sensing mechanism ERFVII

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InAs nanowire superconducting tunnel junctions： Quasiparticle spectroscopy, thermometry, and nanorefrigeration

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Nano Research 2017年第10期10卷 3468-3475页

作者： Jaakko Mastomaki Stefano Roddaro Mirko Rocci Valentina Zannier Daniele Ercolani Lucia Sorba Ilari J. Maasilta Nadia Ligato Antonio Fornieri Elia Strambini Francesco Giazotto nest Scuola Normale Superiore and Istituto Nanoscienze-CNR Piazza S. Silvestro 12 I-55127 Pisa Italy nanoscience Center Department of Physics University of Jyvaskyla 40014 Jyvaskyla Finland

We demonstrate an original method based on controlled oxidation for creating high-quality tunnel junctions between superconducting A1 reservoirs and InAs semiconductor nanowires （NWs）. We show clean tunnel characteristics with a current suppression by 〉4 orders of magnitude for a junction bias well below the A1 gap of △0≈ 200 μeV. The experimental data agree well with the Bardeen- Cooper-Schrieffer theoretical expectations for a superconducting tunnel junction. The studied devices employ small-scale tunnel contacts functioning as thermometers as well as larger electrodes that provide proof-of-principle active cooling of the electron distribution in the NWs. A peak refrigeration of approximately δT = 10 mK is achieved at a bath temperature of Tbath≈ 250-350 mK for our prototype devices. This method introduces important perspectives for the investigation of the thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration.

关键词： InAs nanowire superconducting tunnel junction thermometry nanorefrigeration

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Scanning gate imaging of quantum point contacts and the origin of the 0.7 anomaly

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Nano Research 2015年第3期8卷 948-956页

作者： Andrea lagallo Nicola Paradiso Stefano Roddaro Christian Reichl Werner Wegscheider Giorgio Biasiol Lucia Sorba Fabio Beltram Stefan Heun National Enterprise for nanoscience and Nanotechnology (nest) Istituto Nanoscienze-CNR and Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy Istituto Offcina dei Materiali cnr Laboratorio TASC 34149 Trieste Italy Solid State Physics Laboratory ETH Zurich Schafmattstrasse 16 8093 Zurich Switzerland

The origin of the anomalous transport feature appearing at a conductance G 0.7× （2e2/h） in quasi-lD ballistic devices-the so-called 0.7 anomaly-represents a long standing puzzle. Several mechanisms have been proposed to explain it, but a general consensus has not been achieved. Proposed explanations have been based on quantum interference, the Kondo effect, Wigner crystallization, and other phenomena. A key open issue is whether the point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-lD constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.

关键词： two-dimensional electrongas (2-DEG) scanning gate microscopy 0.7 anomaly

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F-containing cations improve the performance of perovskite solar cells

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Journal of Semiconductors 2022年第1期43卷 4-8页

作者： Qin Zhou Chuantian Zuo Zilong Zhang Peng Gao Liming Ding Key Laboratory of Design and Assembly of Functional Nanostructures(CAS) Fujian Institute of Research on the Structure of Matter(CAS)Fuzhou 350002China Center for Excellence in nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth MaterialsHaixi Institute(CAS)Xiamen 361021China

Organic–inorganic halide perovskite solar cells(PSCs)have delivered power conversion efficiency(PCE)on par with that of crystalline silicon solar cells,due to the considerable effort on the optimization of perovskite materials and devices[1].The three-dimensional(3D)perovskite-based PSCs with the standard n–i–p architecture gave a certified PCE of25.5%[2].However,the poor device stability under operating conditions remains an obstacle to *** 3D hybrid perovskite materials are susceptible to oxygen,UV light,humidity,heat,and electric fields[3].To improve device stability,two main strategies are applied:(1)improving the intrinsic stability[4];(2)providing sufficient protection.

关键词： perovskite stability inorganic

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Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

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Nano Research 2020年第4期13卷 1065-1070页

作者： Sedighe Salimian Omer Arif Valentina Zannier Daniele Ercolani Francesca Rossi Zahra Sadre Momtaz Fabio Beltram Sefano Roddaro Francesco Rossella Lucia Sorba nest Istituto Nanoscienze-CNR and Scuola Normale SuperiorePiazza S.Silvestro 121-56127 PisaItaly IMEM-cnr institute Parco Area delle Scienze 37/A43124 ParmaItaly Department of Physics"E.Fermi" Universita di PisaLargo Pontecorvo 31-56127 PisaItaly

We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/lnP/GaAsSb core-dualshell *** present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device(***-shell,core-core and core-shell).Low-temperature(4.2 K)transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential ***,when the InP barrier thickness is increased to 10 nm,this negative differential resistance is fully *** electrical resistance between the InAs core and the GaAsSb shell,measured in core-shell configuration,is significantly higher with respect to the resistance of the InAs core and of the GaAsSb *** field effect,applied via a back-gate,has an opposite impact on the electrical transport in the core and in the shell *** results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale.

关键词： core-dualshell nanowires charge carrier separation semiconductor nanowires nanoelectronics

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Spectral properties of Tm,Ho:LiYF_4 laser crystal

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Journal of Rare Earths 2011年第6期29卷 592-595页

作者：李春张莹张学建曾繁明 Mauro Tonelli 刘景和 School of Materials Science and Engineering Changchun University of Science and Technology Office of Foreign Affairs Jilin Architectural and Civil Engineering Institute nest-cnr and Dipartimento di Fisica Universita` di Pisa Largo B. Pontecorvo 3 56127 Pisa Italy

The LiYF4 single crystal codoped with thulium and holmium ions was successfully grown by the Cz method. The optimal technical parameters obtained were as follows： the pulling rate was 0.16 mm/h; the rotation speed was 3 rpm; the cooling rate was 15 °C/h. The result of XRD curve showed that as-grown Tm,Ho：LiYF4 laser crystal belonged to the monoclinic system with scheelite-type structure and space group I41/a. The cell parameters calculated were： a=0.52160 nm, c=1.09841 nm and Z=4. Absorption and fluorescence spectra of Tm,Ho：LiYF4 laser crystal at room temperature were measured and analysed. The absorption cross section, FWHM and absorption coefficient at 779.3 nm calculated were 7.44×10–21 cm2, 8.7 nm and 2.23 cm–1, respectively. An intensive fluorescence emission peak appeared near 2045 nm. The emission cross section and fluorescence lifetime were 0.87×10–20 cm2 and 10.8 ms, respectively. The ratio of Tm–Ho transfer to its back-transfer process was 10.6.

关键词： Tm Ho:LiYF4 laser crystal Cz method absorption spectrum fluorescence spectrum rare earths

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掺铥氟化钇钡晶体的生长和光谱性能

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硅酸盐学报 2011年第8期39卷 1334-1338页

作者：李春曾繁明张莹林海 TONELLIM 刘景和长春理工大学材料科学与工程学院 nest-nanoscience institute-cnr and Dipartimento di Fisica Universita'Di Pisa Largo B.Pontecorvo 356127 PisaItaly

采用提拉法生长了掺铥氟化钇钡(Tm3+:BaY2F8,Tm:BYF)激光晶体。通过X射线衍射和光谱测试研究了晶体的相组成和光谱特征。结果表明:晶体属于单斜晶系,空间群C2/m,计算的晶胞参数:a=0.699 28 nm,b=1.052 93 nm,c=0.427 51 nm,β=99.69°... 详细信息

采用提拉法生长了掺铥氟化钇钡(Tm3+:BaY2F8,Tm:BYF)激光晶体。通过X射线衍射和光谱测试研究了晶体的相组成和光谱特征。结果表明:晶体属于单斜晶系,空间群C2/m,计算的晶胞参数:a=0.699 28 nm,b=1.052 93 nm,c=0.427 51 nm,β=99.69°。在吸收光谱中,室温下791 nm处的吸收峰的半高宽为42 nm,其吸收系数和吸收截面分别为4.56 cm–1和8.09×10–21 cm2。在795 nm波长激光激发下,Tm:BYF晶体在1 879.6 nm附近有很强的荧光发射峰,半高宽为79 nm,发射截面为2.13×10–21 cm2,荧光寿命为8.7 ms,有利于Tm:BYF晶体实现1.88μm激光输出。

关键词：掺铥氟化钇钡晶体激光晶体提拉法吸收光谱荧光光谱

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Temperature-Dependent Fluorescence Properties and Diode-Pumped Deep Red Laser Performance of Pr:LiGdF4 Crystal

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Chinese Physics Letters 2015年第5期32卷 86-90页

作者：张玉霞王树贤 Alberto Di Lieto 于果蕾于浩海张怀金 Mauro Tonelli 徐现刚王继扬 State Key Laboratory of Crystal Materials and institute of Crystal Materials Shandong University Jinan 250100 nest Istituto Nanoscienze-cnr and Dipartimento di Fisica dell'UniversitA di Pisa Largo B. Pontecorvo 3 Pisa 56127 Italy 3 Inspur Hizaguang Optoelectronics Co. Ltd Jinan 250101

We demonstrate the temperature-dependent fluorescence properties of Pr：LiGdF4 crystal tor the first time, to the best of our knowledge, and its blue diode pumped cw red laser at 720 nm at room temperature. The fluorescence lifetime and polarized emission cross sections in the visible range are measured and calculated in a temperature range from 77K to 300 K, and the variations of the fluorescence lifetime and spectra are discovered. The reasons for these changes are explained accordingly. The output wavelength of the 720nm laser is first reported on the laser performance by using a fiber-coupled laser diode at the wavelength of 442nm as the pump source, and the maximum cw output power is about 303roW.

关键词： Pr Temperature-Dependent Fluorescence Properties and Diode-Pumped Deep Red Laser Performance of Pr:LiGdF4 Crystal

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Radio Electric Asymmetric Conveyer Technology Modulates Neuroinflammation in a Mouse Model of Neurodegeneration

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Neuroscience Bulletin 2018年第2期34卷 270-282页

作者： Maria Antonietta Panaro Alessandra Aloisi Giuseppe Nicolardi Dario Domenico Lofrumento Francesco De Nuccio Velia La Pesa Antonia Cianciulli Rosaria Rinaldi Rosa Calvello Vania Fontani Salvatore Rinaldi Department of Biosciences Biotechnologies and Biophar- maceutics University of Bari Bari Italy cnr institute for Microelectronics and Microsystems Via Monteroni (Campus Ecotekne) 73100 Lecce Italy Department of Biological and Environmental Sciences and Technologies Section of Human Anatomy University of Salento Lecce Italy Neuropathology Unit Institute of Experimental Neurology Division of Neuroscience IRCCS San Raffaele Scientific Institute Via Olgettina 60 20132 Milan Italy Department of Mathematics and Physics University of Salento Via Amesano 73100 Lecce Italy cnr institute of nanoscience nest Piazza San Silvestro 12 56127 Pisa Italy Department of Regenerative Medicine Rinaldi Fontani Institute Viale Belfiore 43 50144 Florence Italy Research Department Rinaldi Fontani Foundation Viale Belfiore 43 50144 Florence Italy IRF (Shanghai) Medical Sciences 3000 Long Dong Avenue Zhangjiang High-Tech Park Shanghai China

In this study, the effects of Radio Electric Asymmetric Conveyer(REAC), a non-invasive physical treatment, on neuroinflammatory responses in a mouse model of parkinsonism induced by intoxication with1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine(MPTP),were investigated in vivo. We found that the REAC tissue optimization treatment specific for neuro-regenerative purposes(REAC TO-RGN-N) attenuated the inflammatory picture evoked by MPTP-induced nigro-striatal damage inmice, decreasing the levels of pro-inflammatory molecules and increasing anti-inflammatory mediators. Besides, there was a significant reduction of both astrocyte and microglial activation in MPTP-treated mice exposed to REAC TORGN-N. These results indicated that REAC TO-RGN-N treatment modulates the pro-inflammatory responses and reduces neuronal damage in MPTP-induced parkinsonism.

关键词： Parkinson’s disease Neurodegeneration Neuroinflammation REAC TO-RGN-N treatment

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