检索结果-南通市图书馆

Reinforcement Learning Based Quantization Strategy Optimal Assignment Algorithm for Mixed Precision

Computers, Materials & Continua 2024年第4期79卷 819-836页

作者： Yuejiao Wang Zhong Ma Chaojie Yang Yu Yang Lu Wei Xi’an microelectronics Technology institute Xi’an710065China

The quantization algorithm compresses the original network by reducing the numerical bit width of the model,which improves the computation speed. Because different layers have different redundancy and sensitivity to databit width. Reducing the data bit width will result in a loss of accuracy. Therefore, it is difficult to determinethe optimal bit width for different parts of the network with guaranteed accuracy. Mixed precision quantizationcan effectively reduce the amount of computation while keeping the model accuracy basically unchanged. In thispaper, a hardware-aware mixed precision quantization strategy optimal assignment algorithm adapted to low bitwidth is proposed, and reinforcement learning is used to automatically predict the mixed precision that meets theconstraints of hardware resources. In the state-space design, the standard deviation of weights is used to measurethe distribution difference of data, the execution speed feedback of simulated neural network accelerator inferenceis used as the environment to limit the action space of the agent, and the accuracy of the quantization model afterretraining is used as the reward function to guide the agent to carry out deep reinforcement learning training. Theexperimental results show that the proposed method obtains a suitable model layer-by-layer quantization strategyunder the condition that the computational resources are satisfied, and themodel accuracy is effectively improved.The proposed method has strong intelligence and certain universality and has strong application potential in thefield of mixed precision quantization and embedded neural network model deployment.

关键词： Mixed precision quantization quantization strategy optimal assignment reinforcement learning neural network model deployment

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

New structure transistors for advanced technology node CMOS ICs

引用

National Science Review 2024年第3期11卷 24-41页

作者： Qingzhu Zhang Yongkui Zhang Yanna Luo Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences(IMECAS) State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences

Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits(ICs)have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor(FinFET) and gate-all-around FET(GAAFET), more gate electrodes have been added to three-dimensional(3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs(CFET), 3D stack(3DS) FETs and vertical-channel transistors(VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

关键词： transistor CMOS GAAFET CFET 3DS FET

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

A Multi-Channel CMOS Analog Front-End Interface IC with 157.8 d B Current Detection Dynamic Range

引用

Chinese Journal of Electronics 2024年第2期33卷 393-402页

作者： Kunyu WANG Wenjing XU Chengbin ZHANG Yanjun YANG Man-Kay LAW Li ZHOU Jie CHEN Ming CHEN institute of microelectronics of the Chinese Academy of Science University of Chinese Academy of Sciences Zunyi Normal University institute of microelectronics and Dept.of ECE FST University of Macau

A high dynamic range and low-noise CMOS(complementary metal-oxide-semiconductor transistor)front-end interface integrated circuit(IC) with multi-channel detection is presented in this paper. Two different current detection channels, composed of a trans-impedance amplifier(TIA) and an integrator-differentiator TIA, are used to boost the current detection range. A capacitance-coupled instrument amplifier(CCIA) is also included to realize high precision voltage detection. A fourth-order sigma-delta modulator using a second-order loop filter and a second-order noise shaping integral quantizer is adopted to realize effective number of bits above 16 bits. The presented interface IC is implemented in 0.18-μm CMOS process with supply voltage of 3.3 V, and a proto-type electrochemical sensor platform with miniaturized sensor array is developed to verify the functionality of the interface IC. Measurement results indicate that the designed interface IC achieves 157.8 d B current detection dynamic range, and the measured input-referred current noise and voltage noise floor are 1.04 p A and 58.4 n V within 10 k Hz integration bandwidths,respectively.

关键词： Readout integrated circuit Sigma-delta modulator Complementary metal-oxide-semiconductor transistor Current detection dynamic range

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

ZrB_(2)-SiC ceramics toughened with oriented paper-derived graphite for a sustainable approach

引用

Journal of Advanced Ceramics 2024年第2期13卷 207-219页

作者： Luca Zoli Francesca Servadei Simone Failla Matteo Mor Antonio Vinci Pietro Galizia Diletta Sciti cnr-ISSMC Institute of ScienceTechnology and Sustainability for CeramicsFaenza I-48018Italy

Carbon fibre-reinforced ultra-high temperature ceramics(UHTCs)are considered a class of promising materials for several applications,the most appealing ones being in the aerospace sector.Reinforcement is necessary to overcome the brittleness and low thermal shock resistance of ceramics and is often provided through the addition of carbon fibres or other carbon-based phases,such as nanotubes,graphene,and graphite.The present work is focused on the toughening of UHTCs through incorporation of 30-50 vol% thin,ordered graphite layers from conventional filter paper followed by hot pressing sintering.Cellulose filter paper was selected because it undergoes thermolysis with no melting stage forming a strong carbonaceous residue that can be used as toughener.Microstructure and mechanical properties of toughened composites were compared to those of other materials reinforced with short carbon fibres and the effect of different distribution of graphite was studied.Addition of graphite allowed toughness to be increased from 3−4 MPa·m^(1/2)(for unreinforced materials)to 5.1−5.5 MPa·m^(1/2),similar to results obtained with short fibre reinforcement.The high-temperature properties,such as strength and toughness as well as oxidation resistance at 1500℃,were also examined.

关键词： borides paper-derived graphite microstructure toughness sustainability

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Recent advancements in continuously scalable conversion-ratio switched-capacitor converter

引用

Journal of Semiconductors 2024年第4期45卷 8-11页

作者： Mo Huang Yuanfei Wang Rui P.Martins Yan Lu State Key Laboratory of Analog and Mixed-Signal VLSI Institute of MicroelectronicsUniversity of MacaoMacaoChina

Switched-capacitor(SC)DC-DC converter[1]is an impor-tant alternative to inductive DC-DC converter,in terms of removing the bulky power inductor.Hence,it is widely used in low-profile,low-power applications,such as the internet of things(IoT)sensor nodes and energy harvesting[2].Mean-while,considering that capacitor has a much higher energy density than inductor,high-power applications.

关键词： converter switched removing

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Realization of Low in-Band Harmonic for Compact 6–18-GHz T/R Module Under TX-Mode Operation

引用

Chinese Journal of Electronics 2024年第2期33卷 380-384页

作者： Jinming LAI Zhiyou LI Chaojie WANG Hailong WANG Xiaohua MA School of microelectronics Xidian University CETC 29th Research institute

Wideband high power amplifier(PA) with poor harmonic suppression will degrade the performance of the active electronically scanned array(AESA) due to its harmonic products falling into the operating bandwidth of a wideband T/R module. In view of this, a compact reconfigurable harmonic suppress circuit(HSC) is proposed to achieve low in-band harmonic for compact T/R module with multiple octaves under TX-mode operation. The HSC consists of eight microstrip resonant stubs with high impedance and multiple p-i-n switches. By controlling the p-i-n switches, the HSC can work in three states. When six of the used p-i-n switches are “ON” state, the corresponding microstrip resonant stubs are loaded onto the 50 Ω transmission line, which performs a bandstop filter(BSF). For verification, the HSC with bandwidth of 12–15 GHz/15–18 GHz is designed to apply to a 6–18 GHz T/R module. As a result, the second harmonic of 6–9 GHz transmitting signal can be suppressed below 32 d Bc when compared to the PA's fundamental output. While the p-i-n switches are “OFF” state, the HSC is almost the same as a 50 Ω transmission line, which will have a little effect on the 9–18 GHz transmitting signal. The measurement results approximately agree with the calculated results and simulated results, which demonstrate the validity of the proposed HSC.

关键词： GaN power amplifier (PA) Harmonic suppression Low in-band harmonic p-i-n switch Wideband T/R module

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

A High-Resolution Calibration method for Timeto-Digital Converter of Lidar

引用

Chinese Journal of Electronics 2024年

作者： Ruqing LIU Feng LI Jingguo ZHU Yan JIANG Chenghao JIANG Tao HU institute of microelectronics of the Chinese Academy of Sciences

High-resolution time-to-digital converter(TDC) finds major applications in light detection and rang ing(Lidar) systems as one of the high precision time measuring techniques. In this work, a high-resolution TDC i designed and implemented on a Xilinx FPGA board. For precision time measurements, the proposed TDC uses an in ternal tapped delay chain written in Verilog. The TDC circuit measurement errors are examined and calibrated fol lowing several principles of error reduction techniques to meet the specific demand for the high-precision Lidar range Experiments have shown that the suggested calibration TDC has higher performance, achieving sub 35 ps resolution The design is fully customizable and implemented as a set of separate IP cores. This allows for easy implementation and meets the requirements of the present-day pulse Lidar systems.

关键词：

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

引用

Chinese Journal of Electronics 2024年

作者： Yuhao WANG Sen HUANG Qimeng JIANG Xinhua WANG Jie FAN Haibo YIN Ke WEI Yingkui ZHENG Xinyu LIU Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences institute of microelectronics University of Chinese Academy of Sciences

‘Ohmic-before-passivation' process was implemented on ultrathin-barrier(UTB) AlGaN(<6 nm)/GaN heterostructure to further reduce the ohmic contact resistance(Rc). In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNx passivation contributed to restore two-dimensional electron gas(2DEG) in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length(LT) consisted with lower Rc are achieved compared to that of ohmic contact on AlGaN(～20 nm)/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K.The ‘ohmic-before-passivation' process enables the relative stability of ohmic contacts between 50 K to 475 K and significantly improves the DC characteristics of GaN-MIS-HEMTs, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词：

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Advancing computer-generated holographic display thanks to diffraction model-driven deep nets

引用

Opto-Electronic Advances 2024年第1期7卷 1-3页

作者： Vittorio Bianco Pietro Ferraro cnr-ISASI institute of Applied Sciences&Intelligent Systems Viale Campi Flegrei 3480078 Pozzuoli(Na)Italy

Advancements are reported in computer-generated holography proofing RGB 4K display through a new strategy based on diffraction model-driven deep networks. In the new 4K-DMDNet, the network is not a “black box” anymore. Rather, the input-output relation must obey to the physics of wavefront propagation, which is embedded here as a constraint. Thus, a labelled dataset is not required, and the model shows superior generalization capabilities with respect to data-driven approaches. The method is promising for the new generation of RGB 4K holographic display, as well as augmented and virtual reality systems.

关键词： holographic generalization constraint

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Hybrid tri-memristor hyperchaotic map and application in Wasserstein Generative Adversarial Nets

引用

Science China(Technological Sciences) 2024年第6期67卷 1855-1865页

作者： GU Yang BAO Han YU XiHong HUA ZhongYun BAO BoCheng XU Quan School of microelectronics and Control Engineering Changzhou UniversityChangzhou213159China School of Computer Science and Technology Harbin Institute of TechnologyShenzhen518055China

Inspired by basic circuit connection methods,memristors can also be utilized in the construction of complex discrete chaotic systems.To investigate the dynamical effects of hybrid memristors,we propose two hybrid tri-memristor hyperchaotic(HTMH)mapping structures based on the hybrid parallel/cascade and cascade/parallel operations,respectively.Taking the HTMH mapping structure with hybrid parallel/cascade operation as an example,this map possesses a spatial invariant set whose stability is closely related to the initial states of the memristors.Dynamics distributions and bifurcation behaviours dependent on the control parameters are explored with numerical tools.Specifically,the memristor initial offset-boosting mechanism is theoretically demonstrated,and memristor initial offset-boosting behaviours are numerically verified.The results clarify that the HTMH map can exhibit hyperchaotic behaviours and extreme multistability with homogeneous coexisting infinite attractors.In addition,an FPGA hardware platform is fabricated to implement the HTMH map and generate pseudorandom numbers(PRNs)with high randomness.Notably,the generated PRNs can be applied in Wasserstein generative adversarial nets(WGANs)to enhance training stability and generation capability.

关键词： memristor hybrid tri-memristor map spatial invariant set hyperchaos extreme multistability generative adversarial nets

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：