检索结果-南通市图书馆

Deep learning for code generation: a survey

在线全文

学校读者我要写书评

暂无评论

science China(Information sciences) 2024年第9期67卷 5-40页

作者： Huangzhao ZHANG Kechi ZHANG Zhuo LI Jia LI Jia LI Yongmin LI Yunfei ZHAO Yuqi ZHU Fang LIU Ge LI Zhi JIN Key Lab of high Confidence Software Technologies (Peking University) Ministry of Education school of Computer science Peking University school of Computer science and Engineering Beihang University

In the past decade, thanks to the powerfulness of deep-learning techniques, we have witnessed a whole new era of automated code generation. To sort out developments, we have conducted a comprehensive review of solutions to deep learning-based code generation. In this survey, we generally formalize the pipeline and procedure of code generation and categorize existing solutions according to taxonomy from perspectives of architecture, model-agnostic enhancing strategy, metrics, and tasks. In addition, we outline the challenges faced by current dominant large models and list several plausible directions for future research. We hope that this survey may provide handy guidance to understanding, utilizing, and developing deep learning-based code-generation techniques for researchers and practitioners.

关键词： code generation automated software engineering deep learning large model artificial intelligence

Formal Verification of Data Modifications in Cloud Block Storage Based on Separation Logic

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Journal of Electronics 2024年第1期33卷 112-127页

作者： Bowen ZHANG Zhao JIN Hanpin WANG Yongzhi CAO Key Laboratory of high Confidence Software Technologies (MOE) School of Computer Science Peking University school of Computer and Artificial Intelligence Zhengzhou University school of Computer science and Cyber Engineering Guangzhou University

Cloud storage is now widely used, but its reliability has always been a major concern. Cloud block storage(CBS) is a famous type of cloud storage. It has the closest architecture to the underlying storage and can provide interfaces for other types. Data modifications in CBS have potential risks such as null reference or data *** verification of these operations can improve the reliability of CBS to some extent. Although separation logic is a mainstream approach to verifying program correctness, the complex architecture of CBS creates some challenges for verifications. This paper develops a proof system based on separation logic for verifying the CBS data modifications. The proof system can represent the CBS architecture, describe the properties of the CBS system state, and specify the behavior of CBS data modifications. Using the interactive verification approach from Coq, the proof system is implemented as a verification tool. With this tool, the paper builds machine-checked proofs for the functional correctness of CBS data modifications. This work can thus analyze the reliability of cloud storage from a formal perspective.

关键词： Cloud computing Behavioral sciences Reliability Formal verification

Perception field based imitation learning for unlabeled multi-agent pathfinding

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

science China(Information sciences) 2024年第5期67卷 115-135页

作者： Wenjie CHU Ailun YU Wei ZHANG Haiyan ZHAO Zhi JIN school of Computer science Peking University Key Laboratory of high-Confidence Software Technologies (Peking University) Ministry of Education

This paper proposes an imitation learning method to learn a universal agent policy for unlabeled multi-agent pathfinding(unlabeled MAPF) in grid environments. The method transforms the unlabeled MAPF problem into a series of temporal-independent homogeneous classification problems for each *** on this transformation, a neural network is designed to imitate a distance-optimal expert *** neural network consists of two successive modules: perception field learner and field integrating *** former refines and encodes the current system state into a perception field for each agent by combining a set of learnable field-generating functions. The latter takes an agent's perception field as input and decides the agent's next action based on a triplet cross-attention mechanism. We evaluate our method on a diverse set of unlabeled MAPF tasks. Compared with state-of-the-art counterparts, the experimental results manifest the superiority of the proposed method in both generalization ability and scalability.

关键词： unlabeled multi-agent pathfinding perception field triplet cross-attention multi-agent imitation learning learning-based planning

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics Letters 2024年第4期41卷 132-138页

作者：朱蒙董建艇李新录郑凡星周晔吴琨张佳 school of Physics and Wuhan National high Magnetic Field Center Huazhong University of Science and TechnologyWuhan 430074China

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,***,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional *** discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel *** first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel *** also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic *** study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

关键词： tunneling magnetoresistance momentum

highly efficient 1D p-Te/2D n-Bi_(2)Te_(3) heterojunction self-driven broadband photodetector

在线全文

学校读者我要写书评

暂无评论

Nano Research 2024年第3期17卷 1864-1874页

作者： Chenchen Zhao Dongbo Wang Jiamu Cao Zhi Zeng Bingke Zhang Jingwen Pan Donghao Liu Sihang Liu Shujie Jiao Tianyuan Chen Gang Liu Xuan Fang Liancheng Zhao Jinzhong Wang school of Materials science and Engineering Harbin Institute of TechnologyHarbin 150001China school of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for high Pressure science and Technology Advanced Research Shanghai 201203China State Key Laboratory of high Power Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China

Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical ***,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension ***,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface *** device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as *** R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of *** is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.

关键词： topological insulating states interfacial recombination self-driven 1D p-Te/2D n-Bi_(2)Te_(3) photodetector

Surface Deposition of Ni(OH)_(2) and Lattice Distortion Induce the Electrochromic Performance Decay of NiO Films in Alkaline Electrolyte

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Energy & Environmental Materials 2024年第3期7卷 257-267页

作者： Kejun Xu Liuying Wang Chaoqun Ge Long Wang Bin Wang Zhuo Wang Chuanwei Zhang Gu Liu Xi'an Research Institute of high Technology Xi'an 710025China school of Material science and Engineering Zhengzhou UniversityZhengzhou 450001China school of Mechanical Engineering Xi'an University of Science and TechnologyXi'an 710054China

NiO,an anodic electrochromic material,has applications in energy-saving windows,intelligent displays,and military ***,its electrochromic mechanism and reasons for its performance degradation in alkaline aqueous electrolytes are complex and poorly understood,making it challenging to improve NiO thin *** studied the phases and electrochemical characteristics of NiO films in different states(initial,colored,bleached and after 8000 cycles)and identified three main reasons for performance ***,Ni(OH)_(2)is generated during electrochromic cycling and deposited on the NiO film surface,gradually yielding a NiO@Ni(OH)_(2)core-shell structure,isolating the internal NiO film from the electrolyte,and preventing ion ***,the core-shell structure causes the mode of electrical conduction to change from first-to second-order conduction,reducing the efficiency of ion transfer to the surface Ni(OH)_(2)***,Ni(OH)_(2)and NiOOH,which have similar crystal structures but different b-axis lattice parameters,are formed during electrochromic cycling,and large volume changes in the unit cell reduce the structural stability of the thin ***,we clarified the mechanism of electrochromic performance degradation of NiO films in alkaline aqueous electrolytes and provide a route to activation of NiO films,which will promote the development of electrochromic technology.

关键词： alkaline electrolyte electrochromism NiO film performance attenuation mechanism

Review of 2D Bi_(2)X_(3)(X=S,Se,Te):from preparation to photodetector

在线全文

学校读者我要写书评

暂无评论

Rare Metals 2024年第6期43卷 2349-2370页

作者： Zhi Zeng Dong-Bo Wang Xuan Fang Jia-Mu Cao Bing-Ke Zhang Jing-Wen Pan Dong-Hao Liu Si-Hang Liu Shu-Jie Jiao Tian-Yuan Chen Gang Liu Lian-Cheng Zhao Jin-Zhong Wang Department of Optoelectronic Information science School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin 150001China Changchun University science and Technology School of PhysicsThe State Key Laboratory of High Power Semiconductor LasersChangchun 130022China school of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for high Pressure science and Technology Advanced Research Shanghai 201203China

Detector has become an indispensable part of human *** increasing demand for photodetectors with high performance has promoted the research of novel *** the same time,with the development of rising material system,two-dimensional(2D)materials attract a lot of attention,while the suitable option for fabricating photodetector is still *** prospering of bismuth chalcogenides injected new vitality for material field,thereinto,the unique topological insulator characteristics make the research on bismuth selenide(Bi_(2)X_(3))and bismuth telluride(Bi_(2)X_(3)) intriguing.2D Bi_(2)X_(3) also exhibits unique features among various 2D materials,of which,the adjustable narrow energy band gap and polarization-sensitive photocurrent contribute to the promising application of high performance and broadband *** this review,from a bottom-up perspective,we summarize fundamental properties,synthesis method,photodetector performance of 2D Bi_(2)X_(3) based on the previous study,which provide an overall perspective of 2D Bi_(2)X_(3).Wherein,the section of the photodetector is specifically discu ssed with regard to pure Bi_(2)X_(3) photodetector and heterojunction photodetector.A brief summary and outlook were also explored in the end.

关键词： Bi_(2)X_(3) Preparation 2D Photodetector

Enhanced conductivity and weakened magnetism in Pb-doped Sr2IrO4

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2024年第1期33卷 696-701页

作者：岳智来甄伟立牛瑞焦珂珂朱文卡皮雳张昌锦 high Magnetic Field Laboratory Hefei Institutes of Physical ScienceChinese Academy of Sciences science Island Branch of Graduate school University of Science and Technology of China Collaborative Innovation Center of Advanced Microstructures Nanjing University

Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr2IrO4. It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.3 in Sr2-xPbxIrO4. The mapping data obtained from energy-dispersive x-ray spectroscopy analyses give solid evidence that the Pb ions are uniformly distributed in the Sr2IrO4matrix. The incorporation of Pb leads to a moderate depression of the canted antiferromagnetic ordering state. The electrical conductivity could be greatly enhanced when the Pb doping content is higher than x=*** present results give a fresh material base to explore new physics in doped Sr2IrO4systems.

关键词： iridates doping conductivity magnetism

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

science China(Information sciences) 2024年第6期67卷 207-213页

作者： Shiyuan LIU Xiong XIONG Xin WANG Xinhang SHI Ru HUANG Yanqing WU school of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits Peking University Wuhan National high Magnetic Field Center and school of Integrated Circuits Huazhong University of Science and Technology

Two-dimensional （2D） transition metal dichalcogenide （TMDC） semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconductor （CMOS） devices at ultimate ***,constrained by effective device doping strategies,the hole mobility and device performance of tungsten diselenide （WSe2） p-type transistors,especially monolayer chemical vapor deposition （CVD）-grown WSe2,have not met *** this paper,an effective performance enhancement of monolayer WSe2p-type transistor was achieved through a molecular doping *** monolayer WSe2directly on SiO2back-gated substrates and leveraging energy band alignment design,4-nitrobenzenediazonium tetrafluoroborate （4-NBD） molecular dopant with a concentration of 10 m M was utilized to modulate the Fermi level position of monolayer WSe2for hole *** devices demonstrated a more than 98%increase in hole mobility,reaching up to 97 cm2·V-1·s-1while maintaining the current on/off ratio of *** p-type WSe2transistors with 1μm channel length exhibit a high drive current surpassing 176μA·μm-1,exceeding previous CVD-WSe2devices with similar channel *** straightforward and effective approach to improving the electrical performance of WSe2transistors paves the way for advanced logic technologies based on transition metal dichalcogenide semiconductors.

关键词： CVD-grown WSe$_2$ molecular doping 4-NBD p-type transistors hole mobility