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Use of a Digital Image Correlation Technique for Measuring the Material Properties of Beetle Wing

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Journal of Bionic Engineering 2009年第3期6卷 224-231页

作者： Tailie Jin Nam Seo Goo Sung-Choong Woo Hoon Cheol Park biomemitics and intelligent microsystem laboratory Department of Advanced Technology FusionKonkuk University

Beetle wings are very specialized flight organs consisting of the veins and *** it is necessary from a bionic view to investigate the material properties of a beetle wing *** the present study,we have used a Digital Image Correlation (DIC) technique to measure the elastic modulus of a beetle wing *** were prepared by carefully cutting a beetle hind wing into 3.0 mm by 7.0 mm segments (the gage length was 5 mm).We used a scanning electron microscope for a precise measurement of the thickness of the beetle wing *** specimen was attached to a designed fixture to induce a uniform displacement by means of a *** used an ARAMISTM system based on the digital image correlation technique to measure the corresponding displacement of a *** thickness of the beetle wing varied at different points of the *** elastic modulus differed in relation to the membrane arrangement showing a structural anisotropy;the elastic modulus in the chordwise direction is approximately 2.65 GPa,which is three times larger than the elastic modulus in the spanwise direction of 0.84 *** a result,the digital image correlation-based ARAMIS system was suc- cessfully used to measure the elastic modulus of a beetle *** addition to membrane's elastic modulus,we considered the Poisson's ratio of the membrane and measured the elastic modulus of a vein using an Instron universal tensile *** result reveals the Poisson's ratio is nearly zero and the elastic modulus of a vein is about 11 GPa.

关键词： digital image correlation technique beetle wing elastic modulus Poisson's ratio vein membrane

Magnetic Topological Dirac Semimetal Transition Driven by SOC in EuMg_(2)Bi_(2)

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Chinese Physics Letters 2024年第1期41卷 63-67页

作者：王佳萌钱浩吉姜琦乔山叶茂 State Key laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Research Center for intelligent Chips and Devices Zhejiang LabHangzhou 311121China Center for Transformative Science ShanghaiTech UniversityShanghai 201210China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Synchrotron Radiation Facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China

Magnetic topological semimetals have been at the forefront of condensed matter physics due to their ability to exhibit exotic transport *** the interplay between magnetic and topological orders in systems with broken time-reversal symmetry is crucial for realizing non-trivial quantum *** delve into the electronic structure of the rare-earth-based antiferromagnetic Dirac semimetal EuMg_(2)Bi_(2) using first-principles calculations and angle-resolved photoemission *** calculations reveal that the spin-orbit coupling(SOC)in EuMg_(2)Bi_(2) prompts an insulator to topological semimetal transition,with the Dirac bands protected by crystal *** linearly dispersive states near the Fermi level,primarily originating from Bi 6p orbitals,are observed on both the(001)and(100)surfaces,confirming that EuMg_(2)Bi_(2) is a three-dimensional topological Dirac *** research offers pivotal insights into the interplay between magnetism,SOC and topological phase transitions in spintronics applications.

关键词： spectroscopy topological Dirac

Evaluating the quantum confinement effects modulating exciton and electronic band structures of two-dimensional layered MoSSe films and their photodetection potentials

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Science China Materials 2024年第10期67卷 3087-3095页

作者： Yifan Ding Xudan Zhu Hongyu Tang Weiming Liu Shuwen Shen Jiajie Fan Yi Luo Yuxiang Zheng Chunxiao Cong Siyuan Luo Rongjun Zhang Department of Optical Science and Engineering Key Laboratory of Micro and Nano Photonic Structures(MOE)Shanghai Engineering Research Center of Ultra-Precision Optical ManufacturingFudan UniversityShanghai 200433China Shanghai Frontiers Science Research Base of intelligent Optoelectronics and Proception Institute of OptoelectronicsFudan UniversityShanghai 200433China Academy for Engineering and Technology Fudan UniversityShanghai 200433China School of Information Science and Engineering Fudan UniversityShanghai 200433China microsystem and Terahertz Research Center Chengdu 610200China Shanghai Institute of intelligent Electronics&Systems Shanghai 200433China

Emerging two-dimensional ternary transition metal dichalcogenide alloys have attracted much attention for their unique optical and optoelectronic properties,making them ideal candidates for optoelectronic ***,a comprehensive understanding of their quantum confinement effects and photoelectronic response characteristics remains crucial for device optimization and performance *** this study,we employed various spectroscopic techniques to investigate the optical properties and electronic band structures of molybdenum sulfide selenide(MoSSe)films with different layer numbers(4–11 layers).Our results revealed the splitting of Raman modes and shifting of phonon vibrational frequencies with increasing thickness,suggesting that MoSSe has strong interactions within the *** A1g and E2g 1 modes were mainly shifted by internal strain and dielectric screening effect versus thickness,*** redshift phenomenon of A and B excitons with increasing thickness was attributed to the leading effect of quantum confinement on exciton properties and optical band *** observed a strong decrease in the direct bandgap spectral weight in photoluminescence(PL)when the layer number increased from 4 to *** addition,we have fabricated MoSSe photodetectors that exhibit a broadband response in the visible wavelength band of 350–800 ***,the observed enhancement in photocurrent and responsivity with increasing film thickness underscored the potential of MoSSebased devices for practical optoelectronic *** research contributes to advancing our fundamental understanding of MoSSe materials and paves the way for the design and development of high-performance optoelectronic devices.

关键词： MoSSe alloy quantum confinement effects exciton electronic band structure photodetection

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State Key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University Key laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key laboratory of Nanophotonic Materials and Devices & Key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Tunable magnetism and band structure in kagome materials RETi3Bi4 family with weak interlayer interactions

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Science Bulletin 2024年第17期69卷 2660-2664页

作者： Jingwen Guo Liqin Zhou Jianyang Ding Gexing Qu Zhengtai Liu Yu Du Heng Zhang Jiajun Li Yiying Zhang Fuwei Zhou Wuyi Qi Minghui Cui Yongxin Zhang Fengyi Guo Tianqi Wang Fucong Fei Yaobo Huang Tian Qian Dawei Shen You Song Hongming Weng Fengqi Song National laboratory of Solid State Microstructures School of PhysicsSchool of Materials Science and Intelligent EngineeringCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Beijing National laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China State Key laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT)Chinese Academy of SciencesShanghai 200050China Shanghai Synchrotron Radiation Facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201210China State Key laboratory of Coordination Chemistry School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Atom Manufacturing Institute Nanjing 211806China National Synchrotron Radiation laboratory University of Science and Technology of ChinaHefei 230029China Songshan Lake Materials laboratory Dongguan 523808China

Kagome lattice,characterized by two-dimensional honeycomb network of corner-sharing triangles[1],presents flat bands,Dirac cones,and van Hove singularities(VHSs),which have been theoretically predicted and experimentally observed[2-4].When combined with spin-orbit coupling(SOC)and magnetism,novel properties have *** kagome materials vary,most of their strong interlayer interactions make the synthesized crystals not layered,and the properties deviating from the raw two-dimensional kagome *** crystals are difficult to fabricate into thin devices and to tune the physical properties of the materials using gate voltage.

关键词： network interlayer structure

Ultrafast optical modulation of the fluorescence from a single-photon emitter in silicon carbide

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Photonics Research 2024年第5期12卷 941-946页

作者： MENGTING HE YUJING CAO JUNJIE LIN ZHIPING JU BOTAO WU E WU State Key laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Photon Technology(Zhejiang)Co. Ltd.Jiaxing 314100China National Key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200000China Department of Physics and Shanghai Key laboratory for Magnetic Resonance East China Normal UniversityShanghai 200241China Chongqing Key laboratory of Precision Optics Chongqing Institute of East China Normal UniversityChongqing 401120China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

The quest for the room-temperature optical transistor based on nonlinearities in single atoms or molecules is attracting a lot of *** this work,a single-photon emitter in cubic silicon carbide is verified that can operate as an optical switch at room temperature under pulsed green laser illumination with a near-infrared pulsed laser as the control *** demonstrated an ultrafast and reversible optical modulation with a high photoluminescence intensity suppression ratio up to 97.9%and a response time as short as 287.9±5.7 *** current development provides insights for high-precision and ultrafast optical switches,with possibilities for integration with emerging electronic installations to realize more intelligent photoelectric integrated devices.

关键词： emitter carbide photon

Structural Characteristics of Allomyrina Dichotoma Beetle＇s Hind Wings for Flapping Wing Micro Air Vehicle

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Journal of Bionic Engineering 2014年第2期11卷 226-235页

作者： Ngoc San Ha Quang Tri Truong Hoang Vu Phan Nam Seo Goo Hoon Cheol Park Biomimetics and intelligent microsystem laboratory Department of Advanced Technology Fusion Division of Interdisciplinary Studies Konkuk University Seoul 143-701 Republic of Korea

In this study, we present a complete structural analysis ofAllomyrina dichotoma beetle＇s hind wings by investigating their static and dynamic characteristics. The wing was subjected to the static loading to determine its overall flexural stiffness. Dy- namic characteristics such as natural frequency, mode shape, and damping ratio of vibration modes in the operating frequency range were determined using a Bruel ＆ Kjaer fast Fourier transform analyzer along with a laser sensor. The static and dynamic characteristics of natural Allomyrina dichotoma beetle＇s hind wings were compared to those of a fabricated artificial wing. The results indicate that natural frequencies of the natural wing were significantly correlated to the wing surface area density that was defined as the wing mass divided by the hind wing surface area. Moreover, the bending behaviors of the natural wing and artificial wing were similar to that of a cantilever beam. Furthermore, the flexural stiffness of the artificial wing was a little higher than that of the natural one whereas the natural frequency of the natural wing was close to that of the artificial wing. These results provide important information for the biomimetic design of insect-scale artificial wings, with which highly ma- neuverable and efficient micro air vehicles can be designed.

关键词： beetle hind wing flexural stiffness natural frequency mode shape Micro Air Vehicles (MAVs)

A biological fluid fiber Sagnac sensor based on SPF-PCF-SPF structure

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Optoelectronics Letters 2023年第4期19卷 210-214页

作者： GUO Junqi WANG Changle DI Ke LI Zhehao LI Renpu LIU Yu Chongqing Key laboratory of Autonomous Navigation and microsystem Chongqing University of Post and TelecommunicationsChongqing 400065China Chongqing Engineering Research Center of intelligent Sensing Technology and microsystem Chongqing University of Posts and TelecommunicationsChongqing 400065China

A biological solution concentration sensor based on a side-polished fiber(SPF)assisted fluid system is *** birefringence properties of the asymmetrically filled fluid in this structure and the relationship between the concentration of the biological solution and the refractive index are theoretically *** was found that the interference peaks had red-shifted with increasing concentration.A sensing sensitivity of 1.3871×10^(4)nm·mL/mol at 14.68×10^(-4)mol/mL was achieved within the experimental range after different concentrations of arginine solutions were injected into the sensing *** sensing system can also be applied to measure the concentration of other biological solutions,providing the feasibility of real-time detection of biological solutions.

关键词： fiber fluid structure

Design and characteristic research on side-polished fiber fluid sensing system

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Optoelectronics Letters 2021年第8期17卷 490-495页

作者： LIU Yu YANG Qingrong LU Yongle DI Ke WEN Dandan YUE Yiting ZHOU Min WANG Changle GUO Junqi Chongqing Engineering Research Center of intelligent Sensing Technology and microsystem Chongqing University of Posts and TelecommunicationsChongqing 400065China

A novel fluid sensing system based on side-polished optical fiber(SPOF)is proposed,which realizes the fluid replaceability and effective refractive index(RI)sensing *** investigations demonstrate that the photonic bandgap effect can be obtained if the RI of liquid is higher than that of substrate material in the wavelength range *** relationship between bandgap edge wavelength and RI is studied *** SPOF with a depth of 57μm is used in the experiment to realize the construction of the fluid *** filling three different liquids,the result shows that the wavelength of the bandgap edge has a red shift with RI increased,which is nearly linear in the RI range of 1.56—1.6 with a sensitivity about 5543.64 nm/*** proposed sensing system can be flexibly applied to the field of fluid characteristic sensing such as biochemical solution characteristic detections.

关键词： fiber bandgap characteristic