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Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

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Science China(Information Sciences) 2021年第6期64卷 196-202页

作者： Zhiqiang CAO Yiming WEI Wenjing CHEN Shaohua YAN Lin LIN Zhi LI Lezhi WANG Huaiwen YANG Qunwen LENG Weisheng ZHAO beihang-Geortek Joint microelectronics institute Qingdao Research InstituteBeihang University Fert Beijing institute BDBCSchool of MicroelectronicsBeihang University Goertek Inc.

The Internet of Things has created an increasing demand for giant magnetoresistive(GMR)sensor owing to its high sensitivity, low power-consumption and small size. A full Wheatstone bridge GMR sensor is fabricated on 6-inch wafers with an annealing process on patterned devices. It can be observed that GMR resistors could have different pinning directions in one wafer by magnetic resistance measurements and MATLAB simulations. The full Wheatstone bridge device shows a sensitivity of 2 mV/V/mT in a linear range of ±6 mT, and its angular response to the surrounding magnetic field is as low as 0.08 mT. These results demonstrate a new approach to high-sensitive and low-cost GMR sensors with a controllable post annealing process.

关键词： GMR sensor full Wheatstone bridge annealing simulation

Developments and Applications of Tunneling Magnetoresistance Sensors

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Tsinghua Science and Technology 2022年第3期27卷 443-454页

作者： Shaohua Yan Zitong Zhou Yaodi Yang Qunwen Leng Weisheng Zhao the School of Integrated Circuit Science and Engineering Beihang UniversityBeijing 100191China beihang-Goertek Joint microelectronics institute Qingdao Research Institute of Beihang UniversityQingdao 266100China

Magnetic sensors based on tunneling magnetoresistance(TMR)effect exhibit high sensitivity,small size,and low power *** have gained a lot of attention and have potential applications in various *** study first introduces the development history and basic principles of TMR ***,a comprehensive description of TMR sensors linearization and Wheatstone bridge configuration is *** key performance parameters,the field sensitivity and noise mechanisms,are ***,the emerging applications of TMR sensors are discussed.

关键词： tunneling magnetoresistance(TMR)sensor linearization Wheatstone bridge configuration noise

PandaX-xT——A deep underground multi-ten-tonne liquid xenon observatory

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Science China(Physics,Mechanics & Astronomy) 2025年第2期68卷 105-120页

作者： Abdusalam Abdukerim Zihao Bo Wei Chen Xun Chen Chen Cheng Zhaokan Cheng Xiangyi Cui Yingjie Fan Deqing Fang Lisheng Geng Karl Giboni Linhui Gu Xunan Guo Xuyuan Guo Zhichao Guo Chencheng Han Ke Han Changda He Jinrong He Di Huang Junting Huang Zhou Huang Ruquan Hou Yu Hou Xiangdong Ji Yonglin Ju Chenxiang Li Jiafu Li Mingchuan Li Shuaijie Li Tao Li Qing Lin Jianglai Liu Congcong Lu Xiaoying Lu Lingyin Luo Yunyang Luo Wenbo Ma Yugang Ma Yajun Mao Yue Meng Xuyang Ning Binyu Pang Ningchun Qi Zhicheng Qian Xiangxiang Ren Nasir Shaheed Xiaofeng Shang Xiyuan Shao Guofang Shen Lin Si Wenliang Sun Yi Tao Anqing Wang Meng Wang Qiuhong Wang Shaobo Wang Siguang Wang Wei Wang Xiuli Wang Xu Wang Zhou Wang Yuehuan Wei Mengmeng Wu Weihao Wu Yuan Wu Mengjiao Xiao Xiang Xiao Binbin Yan Xiyu Yan Yong Yang Chunxu Yu Ying Yuan Zhe Yuan Youhui Yun Xinning Zeng Minzhen Zhang Peng Zhang Shibo Zhang Shu Zhang Tao Zhang Wei Zhang Yang Zhang Yingxin Zhang Yuanyuan Zhang Li Zhao Jifang Zhou Ning Zhou Xiaopeng Zhou Yong Zhou Yubo Zhou Zhizhen Zhou New Cornerstone Science Laboratory Tsung-Dao Lee InstituteShanghai Jiao Tong UniversityShanghai 200240China School of Physics and Astronomy Shanghai Jiao Tong UniversityKey Laboratory for Particle Astrophysics and Cosmology(MoE)Shanghai Key Laboratory for Particle Physics and CosmologyShanghai 200240China Shanghai Jiao Tong University Sichuan research institute Chengdu 610213China School of Physics Sun Yat-sen UniversityGuangzhou 510275China Sino-French institute of Nuclear Engineering and Technology Sun Yat-sen UniversityZhuhai 519082China Department of Physics Yantai UniversityYantai 264005China Key Laboratory of Nuclear Physics and Ion-beam Application(MOE) Institute of Modern PhysicsFudan UniversityShanghai 200433China School of Physics Beihang UniversityBeijing 102206China Peng Huanwu Collaborative Center for research and Education Beihang UniversityBeijing 100191China Beijing Key Laboratory of Advanced Nuclear Materials and Physics Beihang UniversityBeijing 102206China Southern Center for Nuclear-Science Theory(SCNT) Institute of Modern PhysicsChinesen Academy of SciencesHuizhou 516000China Yalong River Hydropower Development Company Ltd.Chengdu 610051China School of Mechanical Engineering Shanghai Jiao Tong UniversityShanghai 200240China Department of Physics University of MarylandCollege ParkMaryland 20742USA State Key Laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefei 230026China Department of Modern Physics University of Science and Technology of ChinaHefei 230026China research Center for Particle Science and Technology Institute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao 266237China Key Laboratory of Particle Physics and Particle Irradiation of Ministry of Education Shandong UniversityQingdao 266237China State Key Laboratory of Nuclear Physics and Technology School of PhysicsPeking UniversityBeijing 100871China School of Physics Nankai UniversityTianjin 300071China SJTU Paris Elite I

We propose a major upgrade to the existing PandaX-4T experiment at the China Jinping Underground *** new experiment,PandaX-xT,will be a multi-ten-tonne liquid xenon,ultra-low background,and general-purpose *** full-scaled PandaX-xT contains a 43-t liquid xenon active *** an experiment will significantly advance our fundamental understanding of particle physics and *** sensitivity of dark matter direct detection will be improved by nearly two orders of magnitude compared to the current best limits,approaching the so-called“neutrino floor”for a dark matter mass above 10 GeV/c^(2),providing a key test to the Weakly Interacting Massive Particle *** searching for the neutrinoless double beta decay of^(136)Xe isotope in the detector,the effective Majorana neutrino mass can be measured to a 10-41 meV/c^(2) sensitivity,providing a key test to the Dirac/Majorana nature of *** neutrinos and other ultra-rare interactions can also be measured and searched for with an unprecedented background level,opening up new windows of *** on the findings,PandaX-xT will seek the next stage upgrade utilizing isotopic separation of natural xenon.

关键词： dark matter neutrino less double beta decay astrophysical neutrinos liquid xenon

Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory

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Science China(Information Sciences) 2023年第6期66卷 250-257页

作者： Yan HUANG Kaihua CAO Kun ZHANG Jinkai WANG Kewen SHI Zuolei HAO Wenlong CAI Ao DU Jialiang YIN Qing YANG Junfeng LI Jianfeng GAO Chao ZHAO Weisheng ZHAO Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang University institute of microelectronics of the Chinese Academy of Sciences beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang University

In-memory computing（IMC）systems based on emerging nonvolatile memories（NVMs）provide a thorough solution for memory wall issues and von Neumann bottlenecks. Massive IMC schemes have been proposed by utilizing ingenious structures and additional auxiliary components. However, these schemes are not compatible with the basic cell（one memory unit and one transistor）of emerging random-access memory（RAM）, which goes against low-power and high-density requirements. In this paper, we propose a logic implementation scheme based on one magnetic tunnel junction and one transistor（1MTJ-1T）, which is the basic cell of spin-transfer-torque magnetic RAM（STT-MRAM）. With no other assistance, complete 16 logic operations can be accomplished in two steps with their logic outputs in-situ stored in the MTJ. The area（0.2 μm2）and energy consumption per logic operation（1.1–2.6 pJ）of the logic gates under 14 nm process node are evaluated using SPICE simulations, indicating its excellent performance. Our work exhibits a 1MTJ-1Tbased logic operation implementation, which can bridge the gap between STT-MRAM and high-performance IMC applications.

关键词： in-memory computing logic operation magnetic tunnel junctions transistor spin transfer torque

Spintronics intelligent devices

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Science China(Physics,Mechanics & Astronomy) 2023年第11期66卷 17-43页

作者： Wenlong Cai Yan Huang Xueying Zhang Shihong Wang Yuanhao Pan Jialiang Yin Kewen Shi Weisheng Zhao Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao266000China

Intelligent computing paradigms have become increasingly important for the efficient processing of massive amounts of ***,using traditional electronic devices to implement these intelligent paradigms is currently mismatched and limited by their energy,area,and ***,which exploits the magnetic and electrical properties of electrons,could break through these limitations and bring new possibilities to electrical *** particular,the tunneling magnetoresistance effect,merging quantum and spintronics,enables spintronic devices to be compatible with standard integrated circuits with a magnetic tunnel junction(MTJ)design,showing great potential for implementing hardware-based intelligent *** this review,we introduce the specific capabilities of MTJs,including nonvolatility,stochasticity,plasticity,and nonlinearity,which are highly favorable in artificial intelligence *** then present how these devices could impact the development of intelligent computing,including in-memory computing,probabilistic computing,and neuromorphic ***,we discuss their challenges and perspectives in intelligent hardware implementations.

关键词： tunneling magnetoresistance effect magnetic tunnel junction in-memory computing probabilistic computing neuromorphic computing

Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 109-114页

作者： Yudong Zhuo Wenlong Cai Daoqian Zhu Hongchao Zhang Ao Du Kaihua Cao Jialiang Yin Yan Huang Kewen Shi Weisheng Zhao Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the ***, the origin of incubation time in SOT induced switching is clarified simultaneously.

关键词： spin-orbit torque field-like torque magnetization reversal magnetic tunnel junction

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Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir_(20)Mn_(80)

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Chinese Physics B 2023年第5期32卷 648-654页

作者：熊丹荣蒋宇昊朱道乾杜奥郭宗夏卢世阳王春旭夏清涛朱大鹏赵巍胜 Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Hefei Innovation research institute Beihang UniversityHefei 230013China beihang–Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral *** materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_*** the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical ***,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial *** ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of *** presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.

关键词： non-collinear antiferromagnets anomalous Hall effect magnetization switching spin–orbit torque

Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform

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Journal of Semiconductors 2022年第10期43卷 64-72页

作者： Hongchao Zhang Xiangyue Ma Chuanpeng Jiang Jialiang Yin Shuqin Lyu Shiyang Lu Xiantao Shang Bowen Man Cong Zhang Dandan Li Shuhui Li Wenjing Chen Hongxi Liu Gefei Wang Kaihua Cao Zhaohao Wang Weisheng Zhao Fert Beijing institute School of Integrated Science and EngineeringBeihang UniversityBeijing 100191China Truth Memory Tech.Corporation Beijing 100088China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

We demonstrate in-plane field-free-switching spin-orbit torque(SOT)magnetic tunnel junction(MTJ)devices that are capable of low switching current density,fast speed,high reliability,and,most importantly,manufactured uniformly by the 200-mm-wafer *** performance of the devices is systematically studied,including their magnetic properties,switch-ing behaviors,endurance and data *** successful integration of SOT devices within the 200-mm-wafer manufactur-ing platform provides a feasible way to industrialize SOT *** is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.

关键词： SOT MTJ low switching current densities 200-mm-wafer platform endurance data retention

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

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Chinese Physics B 2022年第1期31卷 101-106页

作者： Runrun Hao Kun Zhang Yinggang Li Qiang Cao Xueying Zhang Dapeng Zhu Weisheng Zhao Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China Spintronics institute University of JinanJinan 250022China Truth Instruments Co.Ltd. Qingdao 266000China

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)***,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging ***,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic *** this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization ***,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni_(20)Fe_(80) and W/Co_(20)Fe_(60)B_(20))and the topological insulator/ferromagnet(Bi_(2)Se_(3)/Ni_(20)Fe_(80)).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.

关键词： magnetoresistance in-plane magnetization switching electrical detection