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Defects‑Rich Heterostructures Trigger Strong Polarization Coupling in Sulfides/Carbon Composites with Robust Electromagnetic Wave Absorption

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Nano-Micro Letters 2025年第1期17卷 528-547页

作者： Jiaolong Liu Siyu Zhang Dan Qu Xuejiao Zhou Moxuan Yin Chenxuan Wang Xuelin Zhang Sichen Li Peijun Zhang Yuqi Zhou Kai Tao Mengyang Li Bing Wei Hongjing Wu Mengyang Li Bing Wei Hongjing Wu School of Physics Xidian UniversityXi’an 710071People’s Republic of China School of advanced Materials and Nanotechnology State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian UniversityXi’an 710071People’s Republic of China School of Microelectronics Xidian UniversityXi’an 710071People’s Republic of China School of Telecommunication Engineering Xidian UniversityXi’an 710071People’s Republic of China MOE Key laboratory of Material Physics and Chemistry Under Extraordinary School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China The Ministry of Education Key laboratory of Micro and Nano Systems forAerospace School of Mechanical EngineeringNorthwestern PolytechnicalUniversityXi’an 710072People’s Republic of China

Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic *** methods,however,constrain their delicate ***,an innovative alternative is proposed:carrageenan-assistant cations-regulated(CACR)strategy,which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon *** unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction,benefiting the delicate construction of defects-rich heterostructures in M_(x)S_(y)/carbon composites(M-CAs).Impressively,these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and,simultaneously,induct local asymmetry of electronic structure to evoke large dipole moment,ultimately leading to polarization coupling,i.e.,defect-type interfacial ***“Janus effect”(Janus effect means versatility,as in the Greek two-headed Janus)of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first ***,the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm,compared to sulfur vacancies-free CAs without any dielectric *** defects-rich heterostructures,this one-pot CACR strategy may steer the design and development of advanced nanomaterials,boosting functionality across diverse application domains beyond electromagnetic response.

关键词： Defects-rich heterointerfaces Sulfides Polarization coupling Electromagnetic wave absorption

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Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

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Science China(Information Sciences) 2024年第6期67卷 152-171页

作者： Mingsheng XU Yuwei WANG Jiwei LIU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

Two-dimensional(2D) materials are at the forefront of innovation, heralding a new era for nextgeneration electronics and optoelectronics. These materials are distinguished by their unique structural characteristics: they have no hanging bonds on their surface, exhibit weakened electrostatic shielding in the Z-direction, and boast atomic thickness in their monolayers. These features have led to groundbreaking discoveries in electrical, optical, and magnetic properties, paving the way for advancements in low-power electronics, valleytronics, infrared detectors, and memory devices. Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration. In response to this ongoing evolution, the National Natural Science Foundation of China(NSFC) initiated a major program in 2021 dubbed “Si-compatible two-dimensional semiconductor materials and devices”. This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions. Additionally, it sheds light on the challenges that researchers in the 2D domain face, particularly in developing Si-compatible 2D technologies.

关键词： two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration low-power

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Plasmonic tandem heterojunctions enable high-efficiency charge transfer for broad spectrum photocatalytic hydrogen production

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Journal of Energy Chemistry 2025年第1期100卷 710-720页

作者： Wenxuan Chen Xiu-Qing Qiao Guo Hui Bojing Sun Dongfang Hou Meidi Wang Xueqian Wu Tao Wu Dong-Sheng Li College of Materials and Chemical Engineering Key Laboratory of Inorganic Nonmetallic Crystalline and Energy Conversion Materials China Three Gorges University Hubei Three Gorges laboratory College of Chemistry and Materials Science and Guangdong Provincial Key Laboratory of Supramolecular Coordination Chemistry Jinan University

Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer ***,a fascinating plasmonic tandem heterojunction with the hc-CdS/Mo2C@C heterostructure is aimfully prepared for effectively promoting the charge separation kinetics of the CdS photocatalyst via the synergistic strategy of phase junction,Schottky junction,and photothermal *** difference in atomic configuration between cubic-CdS （c-CdS） and hexagonal-CdS （h-CdS） leads to effective charge separation through a typical Ⅱ charge transfer mechanism,and plasmonic Schottky junction further extracts the electrons in the hc-CdS phase junction to realize gradient charge ***,the photothermal effect of Mo2C@C helps to expand the light absorption,accelerate charge transfer kinetics,and reduce the hydrogen evolution energy *** carbon layer provides a fast channel for charge transfer and protects the photocatalyst from *** a result,the optimized hc-CMC photocatalyst exhibits a significantly high photocatalytic H2production activity of 28.63 mmol/g/h and apparent quantum efficiency of 61.8%,surpassing most of the reported *** study provides a feasible strategy to enhance the charge transfer kinetics and photocatalytic activity of CdS by constructing plasmonic tandem heterogeneous junctions.

关键词： Heterojunctions LSPR Photocatalyst Phase junction Schottky junction Photothermal effect

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Sulfolane‑Based Flame‑Retardant Electrolyte for High‑Voltage Sodium‑Ion Batteries

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Nano-Micro Letters 2025年第2期17卷 498-516页

作者： Xuanlong He Jie Peng Qingyun Lin Meng Li Weibin Chen Pei Liu Tao Huang Zhencheng Huang Yuying Liu Jiaojiao Deng Shenghua Ye Xuming Yang Xiangzhong Ren Xiaoping Ouyang Jianhong Liu Biwei Xiao Jiangtao Hu Qianling Zhang Graphene Composite Research Center College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhen 518060People’s Republic of China Center of Electron Microscopy State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou 310027People’s Republic of China GRINM(Guangdong)Research Institute for advanced Materials and Technology FoshanGuangdong 528051People’s Republic of China College of Energy Engineering Zhejiang UniversityHangzhouZhejiang 310027People’s Republic of China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105People’s Republic of China Shenzhen Eigen-Equation Graphene Technology Co.Ltd Shenzhen 518000People’s Republic of China

Sodium-ion batteries hold great promise as next-generation energy storage ***,the high instability of the electrode/electrolyte interphase during cycling has seriously hindered the development of *** particular,an unstable cathode–electrolyte interphase(CEI)leads to successive electrolyte side reactions,transition metal leaching and rapid capacity decay,which tends to be exacerbated under high-voltage ***,constructing dense and stable CEIs are crucial for high-performance *** work reports localized high-concentration electrolyte by incorporating a highly oxidation-resistant sulfolane solvent with non-solvent diluent 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether,which exhibited excellent oxidative stability and was able to form thin,dense and homogeneous *** excellent CEI enabled the O3-type layered oxide cathode NaNi_(1/3)Mn_(1/3)Fe_(1/3)O_(2)(NaNMF)to achieve stable cycling,with a capacity retention of 79.48%after 300 cycles at 1 C and 81.15%after 400 cycles at 2 C with a high charging voltage of 4.2 *** addition,its nonflammable nature enhances the safety of *** work provides a viable pathway for the application of sulfolane-based electrolytes on SIBs and the design of next-generation high-voltage electrolytes.

关键词： Sodium-ion batteries Sulfolane-based electrolyte High voltage Layered oxide cathode Flame retardant

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Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

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Chinese Physics Letters 2015年第10期32卷 110-112页

作者：孙静王宏王湛吴士伟马晓华 School of advanced Materials and Nanotechnology Key Laboratory of Wide Band-Gap Semiconductor TechnologyXidian University

The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors （OTFTs） is studied. The effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length （source and drain electrodes＇ length） related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases dramatically when the contact length is scaled down to 20O nm. With the help of the contact length related contact resistance, contact-size-dependent fT Of bottom-contact OTFTs is studied and it is found that fr increases with the decrease of the contact length in bottom-contact OTFTs.

关键词： Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors length

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Artificial afferent neurons based on the metal-insulator transition of VO2

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Science China(Information Sciences) 2024年第11期67卷 347-353页

作者： Jiayao CHEN Lei YIN Yue WANG Haolin WANG Dongke LI Deren YANG Xiaodong PI State Key laboratory of Silicon and advanced semiconductor Materials & School of Materials Science and Engineering Zhejiang University Institute of advanced semiconductors & Zhejiang Provincial Key laboratory of Power semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Centre Zhejiang University

Neuromorphic computing offers significant advantages in addressing data redundancy and enhancing system energy efficiency. Although extensive research has been conducted on pulsed neural networks and bionic sensors, the development of artificial electronic afferent neurons for low-energy information transfer remains limited. This study introduces an artificial afferent neuron comprising a vanadium dioxide（VO2）device, capacitor and resistor. The VO2devices exhibit stable electrically induced metal-insulator transition（MIT）. Leveraging the MIT of this device, we develop an artificial afferent neuron to transform constant or sinusoidal analog signals into pulsed voltage signals. The output frequency increases with the increase of the input voltage, mimicking the faster pulse outputs of biological afferent neurons in response to stronger stimuli.

关键词： vanadium dioxide metal-insulator transition artificial afferent neurons pulsed voltage signal output frequency

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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

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Chinese Physics B 2015年第3期24卷 332-335页

作者：张鹏赵胜雷侯斌王冲郑雪峰马晓华张进成郝跃 Key laboratory of Wide Band-Gap semiconductor Materials and Devices School of Advanced Materials and NanotechnologyXidian University

We present an AlGaN/GaN high-electron mobility transistor（HEMT） device with both field plate（FP） and lowdensity drain（LDD）. The LDD is realized by the injection of negatively charged fluorine（F-） ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP.

关键词： GaN high-electron mobility transistors fluorine electric field

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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

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Science China(Information Sciences) 2022年第10期65卷 285-292页

作者： Siyu LIU Xiaohua MA Jiejie ZHU Minhan MI Jingshu GUO Jielong LIU Yilin CHEN Qing ZHU Ling YANG Yue HAO Key laboratory of Wide Bandgap semiconductor Technology School of Microelectronics Xidian University School of advanced Materials and Nanotechnology Xidian University

The etching process of high-performance recessed-gate In Al N/Ga N high-electron mobility transistors(HEMTs) has been actively researched. This paper proposes a post-etching self-limited surface restoration method that effectively suppresses the etching damage, enhancing the transport properties of recessed-gate In Al N/Ga N HEMTs. We fabricated planar-gate devices, inductively coupled plasma(ICP)-etched devices, and post-etching-treated(PET) devices. The damage caused by the ICP etching process severely deteriorated the transport properties of the devices. However, the post-etching process effectively inhibited the etching damage and improved the device transport properties. Through temperature-dependent tests and a simulation, the change in the peak transconductance was compared among different devices. The temperature-dependent optical phonon scattering and impurity-dependent remote charge scattering mechanisms were analyzed. The results confirmed that the etching damage significantly affected the channel electron scattering mechanism. The field-effect mobility showed a linear relationship with temperature, and the optical phonon scattering model illustrated that the field-effect mobility decreased with increasing temperature. The etching damage caused a decrease in the field-effect mobility from 1075.5 to 699.1 cm~2/V·s,which increased the fitting error between this empirical line and the optical phonon scattering fitting curve from 0.086 to 0.948, similar to the remote charge scattering fitting curve. The combined error range is from 0.896 to 0.054.

关键词： GaN InAlN/GaN HEMTs etching damage scattering mechanism

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Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

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Science China(Technological Sciences) 2015年第8期58卷 1369-1374页

作者： SONG QingWen YUAN Hao HAN Chao ZHANG YuMing TANG XiaoYan ZHANG YiMeng GUO Hui ZHANG YiMen JIA RenXu WANG YueHu School of advanced Materials and Nanotechnology Xidian University Key laboratory of Wide Band Gap semiconductor Materials and Devices Xidian University

There is a great interest in monolithic 4H-SiC Junction Barrier Schottky （JBS） diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 μm 4H-SiC epitaxial layer doped to 6×1015 cm-3. JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm2. A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 gA through the use of an optimum multiple floating guard rings （MFGR） termination, which is about 87.2% of the theoretical value. The differential specific-on resistance （RSP-ON） was meas- ured to be 3.3 mΩcm2, leading to a FOM （VB2/RSP-ON） value of 0.78 GW/cm2, which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices.

关键词： 4H-SiC JBS current capability breakdown voltage

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Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

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International Journal of Minerals,Metallurgy and Materials 2017年第7期24卷 850-856页

作者： Jin-long Liu Liang-xian Chen Yu-ting Zheng Jing-jing Wang Zhi-hong Feng Cheng-ming Li Institute for advanced Materials and Technology University of Science and Technology Beijing Science and Technology on ASIC laboratory Hebei Semiconductor Research Institute

The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm^2·V^（-1）·s^（-1） and greater than 5 × 1012 cm^（-2）, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm^2·V^（-1）·s^（-1）. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.

关键词： H-termination diamond film surface conductivity carrier mobility plasma treatment

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