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检索条件"机构=Acreo AB"
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Two-Dimensional GaAs/AlGaAs Multiple Quantum Well Spatial Light Modulators
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光学学报 2003年 第S1期23卷 339-340页
作者： StéphaneJunique DanielAgren BertrandNoharet LindaHglund Olofberg ErikPetrini JanY.Andersson Hedda Malm Jan Borglind Smilja Becanovic Optical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenOptical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenOptical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenOptical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenOptical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenOptical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenOptical Engineering Department Acreo AB Electrum 236 164 40 Kista SwedenQWIP Technology Department Acreo AB Electrum 236 164 40 Kista SwedenQWIP Technology Department Acreo AB Electrum 236 164 40 Kista SwedenQWIP Technology Department Acreo AB Electrum 236 164 40 Kista Sweden
Multiple quantum well spatial light modulators with 128×128 array in 38μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication proce... 详细信息
来源： 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging
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Crystal Structure Theory and Applications 2013年 第2期2卷 46-56页
作者： Yuxin Song Shumin Wang Carl Asplund Rickard Marcks von Würtemberg Hedda Malm Amir Karim Xiang Lu Jun Shao acreo ab Kista Sweden Department of Microtechnology and Nanoscience Photonics Laboratory Chalmers University of Technology Gothenburg Sweden Department of Microtechnology and Nanoscience Photonics Laboratory Chalmers University of Technology Gothenburg Sweden State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China IRnova ab Kista Sweden National Laboratory for Infrared Physics Shanghai Institute of Technical Physics CAS Shanghai China
InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran... 详细信息
来源： 维普期刊数据库 维普期刊数据库 评论
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