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Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal—an explanation of our TEM results
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IMP & HIRFL Annual Report 2002年 56-58页
作者: S.E.Donnelly,J.H.Evans Joule Physics Laboratory School of Sciences University of Salford Greater Manchester M5 4WT UK. 27 clevelands Abingdon Oxon UK.
In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of ...
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