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Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing

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Science China(Information Sciences) 2019年第2期62卷 169-179页

作者： Runze HAN Peng HUANG Yudi ZHAO Xiaole CUI Xiaoyan LIU Jinfeng KANG Institute of Microelectronics Peking University Key Lab of Integrated Microsystems Peking University Shenzhen Graduate School

Crossbar architecture has been considered as an efficient means to execute a matrix-vector multiplication computation. An efficient evaluation model for this computation including the interconnect resistance effect on the high density resistive random access memmory(RRAM) crossbar array is proposed in this paper. The proposed model considers the interconnect resistance impacts on the columns and rows separately. The simulation results indicate that the computing speed of the proposed model can be boosted by over three orders of magnitude with the computation deviation of 7.7% in comparison with the precise comprehensive model in the 64 kb crossbar array fabricated at the 14 nm technology node. Based on the proposed evaluation model, the impacts of the parameters including nonlinearity and load resistance, on the computation are discussed along with solutions to improve the computational performance.

关键词： crossbar array evaluation model interconnect resistance matrix-vector multiplication RRAM

Ultralow-power high-speed flip-flop based on multimode Fin FETs

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Science China(Information Sciences) 2016年第4期59卷 83-93页

作者： Kai LIAO Xiaoxin CUI Nan LIAO Tian WANG Dunshan YU Xiaole CUI Institute of Microelectronics Peking University Key Laboratory of Integrated Microsystems Shenzhen Graduate School Peking University

In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flipflop(S2.FF) based on high-performance fin-type field-effect transistors(FinF ETs) to achieve high speed and ultralow power consumption. Benefiting from better control of the conductive channel, the shorted-gate(SGmode) FinF ET flip-flop obtains a persistent reduction of 56.7% in average power consumption as well as a considerable improvement in timing performance at a typical 10% data switching activity, while the low-power(LP-mode) FinF ET flip-flop promotes the power reduction to 61.8% without appreciable degradation in ***, through further analysis of the simulation results, we have revealed an unnecessary energy loss caused by the redundant leaps of internal nodes at the static input ‘0’, which has a noticeable negative impact on total power consumption at low data switching activity. In order to overcome this defect, a conditional precharge technique is introduced to control the charging path, and we demonstrate that the independent-gate(IG-mode)FinF ET is the best option for the added control transistor. The verification results indicate that our optimization reduces the power consumption by more than 50% at low data switching activity with an acceptable area and setup time penalty compared with that of LP-mode FinF ET flip-flop.

关键词： multimode FinF ET flip-flop ultralow-power high-speed high-performance

Improving DFA attacks on AES with unknown and random faults

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Science China(Information Sciences) 2017年第4期60卷 166-179页

作者： Nan LIAO Xiaoxin CUI Kai LIAO Tian WANG Dunshan YU Xiaole CUI Institute of Microelectronics Peking University Key Lab of Integrated Microsystems Peking University Shenzhen Graduate School

Differential fault analysis(DFA) aiming at the advanced encryption standard(AES) hardware implementations has become a widely research topic. Unlike theoretical model, in real attack scenarios, popular and practical fault injection methods like supply voltage variation will introduce faults with random locations,unknown values and multibyte. For analyzing this kind of faults, the previous fault model needed six pairs of correct and faulty ciphertexts to recover the secret round-key. In this paper, on the premise of accuracy, a more efficient DFA attack with unknown and random faults is proposed. We introduce the concept of theoretical candidate number in the fault analysis. Based on this concept, the correct round-key can be identified in advance, so the proposed attack method can always use the least pairs of correct and faulty ciphertexts to accomplish the DFA attacks. To further support our opinion, random fault attacks based on voltage violation were taken on an FPGA board. Experiment results showed that about 97.3% of the attacks can be completed within 3 pairs of correct and faulty ciphertexts. Moreover, on average only 2.17 pairs of correct and faulty ciphertexts were needed to find out the correct round-key, showing significant advantage of efficiency compared with previous fault models. On the other hand, less amount of computation in the analyses can be realized with a high probability with our model, which also effectively improves the time efficiency in DFA attacks with unknown and random faults.

关键词： AES DFA attacks unknown and random faults efficient theoretical candidate number voltage violation

Polymer matrix mediated solvation of LiNO3 in carbonate electrolytes for quasi-solid high-voltage lithium metal batteries

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Nano Research 2020年第9期13卷 2431-2437页

作者： Zijian Wang Kai Yang Yongli Song Hai Lin Ke Li Yanhui Cui Luyi Yang Feng Pan school of Advanced Materials Peking University Shenzhen Graduate School Shenzhen 518055China

Lithium(Li)metal is one of the most promising anodes for next-generation energy storage ***,the Li dendrite formation and unstable solid-electrolyte interface(SEI)have hindered its further *** nitrate(LiNO3)is extensively used as an effective electrolyte additive in ether-based electrolytes to improve the stability of lithium ***,it is rarely utilized in carbonate electrolytes due to its low ***,a novel gel polymer electrolyte(GPE)consisting of poly(vinylidene fluoride)(PVDF),poly(methyl methacrylate)(PMMA),poly(ethylene oxide)(PEO)with LiN03 additive is proposed to solve this *** this GPE,polyether-based PEO serves as a matrix for dissolving LiNO3 which can be decomposed into a fast Li-ion conductor(Li3N)in conventional carbonate electrolytes to enhance the stability and Li^+conductivity of the SEI *** a result,dendrite formation is effectively suppressed,and a significantly improved average Coulombic efficiency(CE)of 97.2.in Li-Cu cell is *** using this novel GPE coupled with Li anode and LiNi0.5Mn0.3Co0.2.2.NMC532.,excellent capacity retention of 94.1%and high average CE of over 99.2.are obtained after 2.0 cycles at 0.5 *** work presents fresh insight into practical modification strategies on high-voltage Li metal batteries.

关键词： Li anode gel polymer electrolyte lithium nitrate Li dendrite electrolyte additives

Linear estimate of the number of zeros of Abelian integrals for quadratic centers having almost all their orbits formed by cubics

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Science China Mathematics 2002年第8期45卷 964-974页

作者：赵育林张芷芬李伟固李承治 1. Department of Mathematics Zhongshan University 510275 Guangzhou China 2. school of Mathematical Sciences Peking University 100871 Beijing China

We study the number of zeros of Abelian integrals for the quadratic centers having almost all their orbits formed by cubics, when we perturb such systems inside the class of all polynomial systems of degree n.

关键词： Abelian integrals, quadratic integrable system.

Neuroprotective potential for mitigating ischemia-reperfusion-induced damage

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Neural Regeneration Research 2025年第8期20卷 2199-2217页

作者： Zi Ye Runqing Liu Hangxing Wang Aizhen Zuo Cen Jin Nan Wang Huiqi Sun Luqian Feng Hua Yang The Clinical Medical College Guizhou Medical UniversityGuiyangGuizhou ProvinceChina Division of Infectious Diseases Department of Internal MedicinePeking Union Medical College HospitalChinese Academy of Medical Sciences and Peking Union Medical CollegeBeijingChina school of Medical Imaging Guizhou Medical UniversityGuiyangGuizhou ProvinceChina Division of Gastroenterology First Affiliated Hospital of Zhengzhou UniversityZhengzhouHenan ProvinceChina The Second Clinical Medical College Lanzhou UniversityLanzhouGansu ProvinceChina Department of Neurosurgery Affiliated Hospital of Guizhou Medical UniversityGuiyangGuizhou ProvinceChina

Reperfusion following cerebral ischemia causes both structural and functional damage to brain tissue and could aggravate a patient's condition;this phenomenon is known as cerebral ischemia-reperfusion *** studies have elucidated the neuroprotective role of the sirtuin protein family(Sirtuins)in modulating cerebral ischemia-reperfusion ***,the potential of utilizing it as a novel intervention target to influence the prognosis of cerebral ischemia-reperfusion injury requires additional *** this review,the origin and research progress of Sirtuins are summarized,suggesting the involvement of Sirtuins in diverse mechanisms that affect cerebral ischemia-reperfusion injury,including inflammation,oxidative stress,blood-brain barrier damage,apoptosis,pyroptosis,and *** therapeutic avenues related to Sirtuins that may improve the prognosis of cerebral ischemia-reperfusion injury were also investigated by modulating Sirtuins expression and affecting representative pathways,such as nuclear factor-kappa B signaling,oxidative stress mediated by adenosine monophosphate-activated protein kinase,and the forkhead box *** review also summarizes the potential of endogenous substances,such as RNA and hormones,drugs,dietary supplements,and emerging therapies that regulate Sirtuins *** review also reveals that regulating Sirtuins mitigates cerebral ischemia-reperfusion injury when combined with other risk *** Sirtuins show promise as a potential target for the treatment of cerebral ischemiareperfusion injury,most recent studies are based on rodent models with circadian rhythms that are distinct from those of humans,potentially influencing the efficacy of Sirtuinstargeting drug ***,this review provides new insights into the role of Sirtuins in the pathology and treatment of cerebral ischemia-reperfusion injury.

关键词： apoptosis autophagy blood-brain barrier dietary supplements drug hormones inflammation neuroprotection oxidative stress prognosis pyroptosis reperfusion injury risk factors RNA therapeutics

A Novel Real-Time State-of-Health and State-of-Charge Co-Estimation Method for LiFePO_4 Battery

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Chinese Physics Letters 2016年第7期33卷 182-185页

作者：乔荣学张明建刘屹东任文举林原潘锋 school of Advanced Materials Peking UniversityPeking University Shenzhen Graduate School Institute of Chemistry Chinese Academy of Sciences

The state of charge （SOC） and state of health （SOH） are two of the most important parameters of Li-ion batteries in industrial production and in practical applications. The real-time estimation for these two parameters is crucial to realize a safe and reliable battery application. However, this is a great problem for LiFePO4 batteries due to the large constant potential plateau in the charge/discharge process. Here we propose a combined SOC and SOH co-estimation method based on the experimental test under the simulating electric vehicle working condition. A first-order resistance-capacitance equivalent circuit is used to model the battery cell, and three parameter values, ohmic resistance （Rs）, parallel resistance （Rp） and parallel capacity （Cp）, are identified from a real-time experimental test. Finally we find that Rp and Cp could be utilized to make a judgement on the SOIl. More importantly, the linear relationship between Cp and the SOC is established to make the estimation of the SOC for the first time.

关键词： of in is on SOC A Novel Real-Time State-of-Health and State-of-Charge Co-Estimation Method for LiFePO4 Battery SOH for

A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks

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Journal of Semiconductors 2009年第8期30卷 63-66页

作者：何进马晨月张立宁张健张兴 school of Computer & Information Engineering Shenzhen Graduate SchoolPeking University EECS School of Electronic Engineering and Computer SciencePeking University

A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.

关键词： high-k gate stack nanoscale MOSFETs interface trap and charges trapping and detrapping threshold voltage dynamic behavior compact modeling

Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid

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Research 2020年第1期2020卷 1079-1088页

作者： Yuhao Shi Yingkai Zheng Jialiang Wang Ran Zhao Tao Wang Changbin Zhao Kuan-Chang Chang Hong Meng Xinwei Wang school of Advanced Materials Shenzhen Graduate SchoolPeking UniversityShenzhen 518055China school of Electronic and Computer Engineering Shenzhen Graduate SchoolPeking UniversityShenzhen 518055China

Organic field-effect transistors(OFETs)are of the core units in organic electronic circuits,and the performance of OFETs replies critically on the properties of their dielectric *** to the intrinsic flexibility and natural compatibility with other organic components,organic polymers,such as poly(vinyl alcohol)(PVA),have emerged as highly interesting dielectric materials for ***,unsatisfactory issues,such as hysteresis,high subthreshold swing,and low effective carrier mobility,still considerably limit the practical applications of the polymer-dielectric OFETs for high-speed,low-voltage flexible organic *** work develops a new approach of using supercritical CO_(2. fluid(SCCO_(2.)treatment on PVA dielectrics to achieve remarkably high-performance polymer-dielectric *** SCCO_(2. treatment is able to completely eliminate the hysteresis in the transfer characteristics of OFETs,and it can also significantly reduce the device subthreshold slope to 0._(2.5 V/dec and enhance the saturation regime carrier mobility to 30.2.cm^(2. V^(-1) s^(-1),of which both the numbers are remarkable for flexible polymer-dielectric *** is further demonstrated that,coupling with an organic light-emitting diode(OLED),the SCCO_(2.-treated OFET is able to function very well under fast switching speed,which indicates that an excellent switching behavior of polymer-dielectric OFETs can be enabled by this SCCO_(2. *** the broad and essential applications of OFETs,we envision that this SCCO_(2. technology will have a very broad spectrum of applications for organic electronics,especially for high refresh rate and low-voltage flexible display devices.

关键词： dielectric hysteresis eliminate