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Side ionic-gated perovskite/graphene heterojunction synaptic transistor with bipolar photoresponse for neuromorphic computing

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Photonics Research 2024年第6期12卷 1167-1174页

作者： XIAOYING HE MINGHAO XU SHILIN LIU KUN WANG BOWEN CAO LAN RAO XIANGJUN XIN School of Electronic Engineering and Beijing key {1. of Space-Ground Interconnection and Convergence Beijing University of Posts and TelecommunicationsBeijing 100876China key {1. of semiconductor materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China

By combining the good charge transport property of graphene and the excellent photo-carrier generation char-acteristic of perovskite nanocrystal,we propose and demonstrate an ionic-gated synaptic transistor based on CsPbBr_(3)∕graphene heterojunction for bipolar *** the potential barrier of the CsPbBr_(3)∕graphene heterojunction by the ionic-gate of the electrical double-layer effect can promote the sepa-ration of photogenerated carriers and effectively retard their *** the ionic-gate-tunable Fermi level of graphene and the pinning effect of perovskite nanocrystal,the bipolar photocurrent responses correspond-ing to the excitatory and inhibitory short-term and long-term plasticity are realized by adjusting the negative gate bias.A series of synaptic functions including logic operation,Morse coding,the optical memory and electrical erasure effect,and light-assisted re-learning have also been demonstrated in an optoelectronic collaborative ***,the excellent optical synaptic behaviors also contribute to the handwritten font recognition accuracy of-95%in artificial neural network *** results pave the way for the fabrication of bipolar photoelectric synaptic transistors and bolster new directions in the development of future integrated human ret-inotopic vision neuromorphic systems.

关键词： perovskite ionic Morse

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Realtime observation of “spring fracture” like AlGaN/GaN HEMT failure under bias

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Science China(Information Sciences) 2024年第1期67卷 303-305页

作者： Qing ZHU Zhenni WANG Yuxiang WEI Ling YANG Xiaoli LU Jiejie ZHU Peng ZHONG Yimin LEI Xiaohua MA School of Microelectronics Xidian University State key Discipline {1. of wide bandgap semiconductor Technology Xidian University School of Advanced materials and Nanotechnology Xidian University

The AlGaN/GaN HEMTs have been considered promising candidates for high-frequency and high-power applications,while the reliability issues greatly limit the commercialization of AlGaN/GaN HEMTs. In the past, the research on the reliability of devices was often based on Raman spectroscopy, cathodoluminescence, and TEM after failure of the devices, which is often considered to be the laborious and complicated “archaeological” kind of analysis [1..

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Progress on the program of Si-compatible two-dimensional semiconductor {1. and devices

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Science China(Information Sciences) 2024年第6期67卷 152-171页

作者： Mingsheng XU Yuwei WANG Jiwei LIU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

Two-dimensional(2D) materials are at the forefront of innovation, heralding a new era for nextgeneration electronics and optoelectronics. These materials are distinguished by their unique structural characteristics: they have no hanging bonds on their surface, exhibit weakened electrostatic shielding in the Z-direction, and boast atomic thickness in their monolayers. These features have led to groundbreaking discoveries in electrical, optical, and magnetic properties, paving the way for advancements in low-power electronics, valleytronics, infrared detectors, and memory devices. Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration. In response to this ongoing evolution, the National Natural Science Foundation of China(NSFC) initiated a major program in 2021.dubbed “Si-compatible two-dimensional semiconductor materials and devices”. This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions. Additionally, it sheds light on the challenges that researchers in the 2D domain face, particularly in developing Si-compatible 2D technologies.

关键词： two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration low-power

Electrolyte-gated SrCoO_(x) FET sensor for highly sensitive detecting pH in extreme alkalinity solution

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Nano Research 2024年第4期17卷 3079-3086页

作者： Han Zhou Gaocan Qi Wenbin Li Yuhang Wang Zhihao Yuan School of materials Science and Engineering Tianjin Key Lab of Photoelectric Materials&Devicesand Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education)Tianjin University of TechnologyTianjin 300384China

The pH monitoring is significantly important in chemical industry,biological process,and pollution ***,it remains a great challenge to measure pH in extreme alkalinity ***,we employ an electrolyte-gated field-effect-transistor(FET)strategy using non-stoichiometric SrCoO_(x) with rich oxygen-vacancy defects as channel materials for detecting extreme *** corresponding channel can provide effective oxygen-ion-migration sites for reversible transformation of OH-↔O_(2)-+H^(+)driven by electric *** resultant electrolyte-gated FET sensor exhibits a sensitive linear response to high concentrations of alkaline solution,1.20 ***,the sensor has the ability to directly indicate the pH values ranging from 1..0 to 1..0 in consideration of ion-activity coefficient *** work offers a great possibility for directly detecting base concentration as well as pH values in extreme alkaline solutions.

关键词： field-effect-transistor(FET) pH sensor extreme alkaline solution SrCoO_(x) oxygen-ion migration

Data complexity-based batch sanitization method against poison in distributed learning

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Digital Communications and Networks 2024年第2期10卷 416-428页

作者： Silv Wang Kai Fan Kuan Zhang Hui Li Yintang Yang State key {1. of Integrated Service Networks Xidian UniversityXi'an710126China Department of Electrical and Computer Engineering University of Nebraska-LincolnLincolnNE68588USA key Lab.of the Minist.of Educ.for {1. bandgap semiconductor materials and devices Xidian UniversityXi'an710071China

The security of Federated Learning(FL)/Distributed Machine Learning(DML)is gravely threatened by data poisoning attacks,which destroy the usability of the model by contaminating training samples,so such attacks are called causative availability indiscriminate *** the problem that existing data sanitization methods are hard to apply to real-time applications due to their tedious process and heavy computations,we propose a new supervised batch detection method for poison,which can fleetly sanitize the training dataset before the local model *** design a training dataset generation method that helps to enhance accuracy and uses data complexity features to train a detection model,which will be used in an efficient batch hierarchical detection *** model stockpiles knowledge about poison,which can be expanded by retraining to adapt to new *** neither attack-specific nor scenario-specific,our method is applicable to FL/DML or other online or offline scenarios.

关键词： Distributed machine learning security Federated learning Data poisoning attacks Data sanitization Batch detection Data complexity

Rational design multi-color-emissive chemiluminescent carbon nanodots in a single solvothermal reaction

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Nano Research 2024年第6期17卷 4651-4660页

作者： Guang-Song Zheng Cheng-Long Shen Yuan Deng Kai-Kai Liu Jin-Hao Zang Lin Dong Qing Lou Chong-Xin Shan Henan key {1. of Diamond Optoelectronic materials and devices Key Laboratory of Materials PhysicsMinistry of Educationand School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Recently,the chemiluminescence(CL)induced by carbon nanodots(CDs)has intrigued researchers’extensive interests in various applications due to its special light emission ***,the difficulty of synthesizing chemiluminescent CDs with full-spectrum emission severely hinders the further regulation of the CL emission ***,the multi-color-emissive chemiluminescent CDs are rational designed and further synthesized by regulating the sp2-hybrid core and sp3-hybrid surface from the citrate-ammonia molecular in a single solvothermal *** experimental characterizations and density functional theory calculations reveal that the higher temperature can promote the crosslinking polymerization/carbonization of carbon core and the higher protonation of solvent can determine the core size of final CDs,resulting in the variant CL emission from molecular-,crosslinking-and ***,the CL emission of the CDs can be further synthesized by tuning the luminescence chromophores in the formation process via regulating the temperature and solvent,enabling the applications of the CL CDs in illumination and information *** study paves a new technology to understand the luminescence of CDs and affords an industry translational potential over traditional chemiluminescent molecular.

关键词： carbon nanodots chemiluminescence regulation energy level alignment mechanism

A new nonfullerene acceptor with an extended π conjugation core enables ternary organic solar cells approaching 1.%efficiency

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Nano Research 2024年第5期17卷 4062-4068页

作者： Chunyan Liu Nailiang Qiu Zhengjin Li Yan Lu School of materials Science and Engineering Tianjin Key Laboratory for Photoelectric Materials and DevicesKey Laboratory of Display Materials and Photoelectric DevicesMinistry of EducationTianjin University of TechnologyTianjin 300384China School of Chemistry Chemical Engineering and MaterialsJining UniversityQufu 273155China

In organic solar cells(OSCs),it is an effective way to improve the power conversion efficiency(PCE)by adding a guest component with appropriate absorption and energy levels in the host ***,a new nonfullerene acceptor(NFA)named TBF-2Cl was developed by the strategy of expanding theπconjugated core of 2,2’-(((4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno[1.2-b:5,6-b’]dithiophene-2,7-diyl)bis(methaneylylidene))bis(5,6-dichloro-3-oxo-2,3-dihydro-1.-indene-2,1.diylidene))dimalononitrile(IDT-4Cl)with two benzene *** increase of benzene units,TBF-2Cl exhibits higher lowest unoccupied molecular orbital(LUMO)level of-3.75 eV than that of one benzene unit based NFA IDT-4Cl and fluorene core based NFA F-2Cl,which facilitates enhancing the open-circuit voltage(V_(oc))of ternary ***,TBF-2Cl film shows a medium optical band{1. with the absorption range from 500-800 nm,being well complementary with the wide band{1. polymer donor D1. and narrow band{1. NFA ***,a remarkable PCE of 1..92%with a high short-circuit current density(J_(sc))of 27.40 mA·cm^(-2),a fill factor(FF)of 0.749,especially an outstanding V_(oc) of 0.922 V was achieved for the optimal ternary device based on D1.:TBF-2Cl:CH-6F,surpassing the binary counterpart(1..08%).The findings provide insight into the development of new guest acceptors for obtaining more efficient OSCs.

关键词： medium optical band{1. high lowest unoccupied molecular orbital(LUMO)level the third component ternary organic solar cell high open-circuit voltage

Evidence for reversible oxygen ion movement during electrical pulsing:enabler of emerging ferroelectricity in binary oxides

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materials Futures 2024年第3期3卷 195-205页

作者： Huan Liu Fei Yu Bing Chen Zheng-Dong Luo Jiajia Chen Yong Zhang Ze Feng Hong Dong Xiao Yu Yan Liu Genquan Han Yue Hao State key Discipline {1. of wide band gap semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China Research Center for Intelligent Chips and devices Zhejiang LabHangzhou 311121People’s Republic of China Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjin 300350People’s Republic of China

Ferroelectric HfO_(2)-based materials and {1. show promising potential for applications in information technology but face challenges with inadequate electrostatic control,degraded reliability,and serious variation in effective oxide thickness *** demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films,which are formed in oxygen-deficient conditions by atomic layer deposition at low *** approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO_(2)-based *** theoretical modeling and experimental characterization,we show the following.(1.Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process.(2)These ferroelectric binary oxide films are governed by an interface-limited switching mechanism,which can be attributed to oxygen vacancy migration and surface defects related to electron(de)trapping.(3)Transistors featuring ultrathin amorphous dielectrics,used for non-volatile memory applications with an operating voltage reduced to±1.V,have also been experimentally *** findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.

关键词： ferroelectric binary oxide mobile ion amorphous dielectric nonvolatile memory

Phase-locked single-mode terahertz quantum cascade lasers array

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Journal of semiconductors 2024年第6期45卷 87-91页

作者： Yunfei Xu Weijiang Li Yu Ma Quanyong Lu Jinchuan Zhang Shenqiang Zhai Ning Zhuo Junqi Liu Shuman Liu Fengmin Cheng Lijun Wang Fengqi Liu key {1. of semiconductor materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing100083China Center of materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Division of Quantum materials and {1. Beijing Academy of Quantum Information SciencesBeijing 100193China

We demonstrated a scheme of phase-locked terahertz quantum cascade lasers(THz QCLs)array,with a single-mode pulse power of 1.8 mW at 1. *** device utilizes a Talbot cavity to achieve phase locking among five ridge lasers with first-order buried distributed feedback(DFB)grating,resulting in nearly five times amplification of the single-mode *** to the optimum length of Talbot cavity depends on wavelength,the combination of Talbot cavity with the DFB grating leads to better power amplification than the combination with multimode Fabry-Perot(F-P)*** Talbot cavity facet reflects light back to the ridge array direction and achieves self-imaging in the array,enabling phase-locked operation of *** set the spacing between adjacent elements to be 220μm,much larger than the free-space wavelength,ensuring the operation of the fundamental supermode throughout the laser's dynamic range and obtaining a high-brightness far-field *** scheme provides a new approach for enhancing the single-mode power of THz QCLs.

关键词： quantum cascade lasers phase locking terahertz single mode

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