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Dielectric-ion-conductive ZnNb2O6 layer enabling rapid desolvation and diffusion for dendrite-free Zn metal batteries

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Journal of Energy Chemistry 2025年第1期100卷 693-701页

作者： Haifeng Yang Jian Wang Panpan Zhang Xiaomin Cheng Qinghua Guan Jing Dong Bixian Chen Lujie Jia Jing Zhang Yongzheng Zhang Yunjian Liu Hongzhen Lin School of materials Science and Engineering Jiangsu University i-lab & CAS key laboratory of Nanophotonic materials and devices Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Helmholtz Institute Ulm (HIU) Karlsruhe Institute of Technology (KIT) School of materials Science and Engineering Xi'an University of Technology State key laboratory of Chemical Engineering East China University of Science and Technology

Rechargeable aqueous zinc-metal batteries （AZMBs） are promising candidates for large-scale energy storage systems due to their low cost and high ***,their performance and sustainability are significantly hindered by the sluggish desolvation kinetics at the electrode/electrolyte interface and the corresponding hydrogen evolution reaction where active water molecules tightly participate in the Zn（H2O）62+solvation ***,learnt from self-generated solid electrolyte interphase （SEI） in anodes,the dielectric but ion-conductive zinc niobate nanoparticles artificial layer is constructed on metallic Zn surface （ZNB@Zn）,acting as a rapid desolvation *** zincophilic and dielectric-conductive properties of ZNB layer accelerate interfacial desolvation/diffusion and suppress surface corrosion or dendrite formation,achieving uniform Zn plating/stripping behavior,as confirmed by electronic/optical microscopies and interface spectroscopical measurements together with theoretical ***,the as-prepared ZNB@Zn electrode exhibits excellent cycling stability of over 2000 h and robust reversibility （99.54%） even under high current density and depth of discharge ***,the assembled ZNB@Zn-based full cell displays high capacity-retention rate of 80.21%after 3000 cycles at 5 A g-1and outstanding rate performance up to 10 A *** large-areal pouch cell is stabilized for hundreds of cycles,highlighting the bright prospects of the dielectric but ion-conductive layer in further application of AZMBs.

关键词： Zn metal battery Dielectric artificial layer Rapid ion diffusion Zincophilic diffusion Active water inhibition

Annealing Effect of ZnO on the Performance of Inverted Organic Photovoltaic devices

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Journal of materials Science & Technology 2014年第2期30卷 197-202页

作者： Wenjing Qin Guojing Ding Xinrui Xu Liying Yang Shougen Yin key laboratory of Display materials & photoelectric devices(Ministry of Education) and School of materials Science &Engineering Tianjin University of Technology tianjin key lab for photoelectric materials & devices

ZnO nanoparticles films were prepared via sol-gel process and incorporated into inverted organic photovoltaic devices with a structure of ITO/ZnO/P3HT：PCBM/MoO3/Ag, in which ZnO film served as an electron selective layer. The effects of annealing temperature of ZnO film on the device performance were investigated. When the annealing temperature was 300℃, a well-arranged ZnO thin film was obtained, and the optimized device had doubled short circuit current density （Jsc） and seven-fold higher power conversion efficiency （PCE） compared to the devices without ZnO film. This improvement could be attributed to the enlarged interfacial area of ZnO/active layer and better energy band matching which causes an efficient electron extraction and a decreased interface energy barrier. At particularly high annealing temperature, dramatically increased sheet resistance of indium tin oxide （ITO） was found to cause PCE deterioration. Our finding indicates that it is highly important to investigate both morphology and electrical effects for understanding and optimizing organic photovoltaic （OPV） performance.

关键词： ZnO Inverted organic photovoitaic Annealing effect

Electrolyte-gated SrCoO_(x) FET sensor for highly sensitive detecting pH in extreme alkalinity solution

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Nano Research 2024年第4期17卷 3079-3086页

作者： Han Zhou Gaocan Qi Wenbin Li Yuhang Wang Zhihao Yuan School of materials Science and Engineering Tianjin Key Lab of Photoelectric Materials&Devicesand Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education)Tianjin University of TechnologyTianjin 300384China

The pH monitoring is significantly important in chemical industry,biological process,and pollution ***,it remains a great challenge to measure pH in extreme alkalinity ***,we employ an electrolyte-gated field-effect-transistor(FET)strategy using non-stoichiometric SrCoO_(x) with rich oxygen-vacancy defects as channel materials for detecting extreme *** corresponding channel can provide effective oxygen-ion-migration sites for reversible transformation of OH-↔O_(2)-+H^(+)driven by electric *** resultant electrolyte-gated FET sensor exhibits a sensitive linear response to high concentrations of alkaline solution,1–20 ***,the sensor has the ability to directly indicate the pH values ranging from 14.0 to 17.0 in consideration of ion-activity coefficient *** work offers a great possibility for directly detecting base concentration as well as pH values in extreme alkaline solutions.

关键词： field-effect-transistor(FET) pH sensor extreme alkaline solution SrCoO_(x) oxygen-ion migration

Performance and Stability of Polymer Solar Cells Based on the Blends of Poly(3-Hexylthiophene) and Indene-C_(60) Bis-Adduct

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Chinese Physics Letters 2016年第7期33卷 142-146页

作者：郭敏楠刘少伟郭娜杨利营秦文静印寿根 key laboratory of Display materials and photoelectric devices(Ministry of Education) School of Materials Science and EngineeringTianjin University of Technology tianjin key lab for photoelectric materials and devices Tianjin University of Technology

The performance and morphology stability of polymer bulk heterojunetion solar cells based on poly（3-hexylthiophene）（P3HT） as the donor and indene-C6o bisadduct （ICBA） or methanofullerene [6,6]-phenyl C61-butyric acid methyl ester （PCBM） as the aeceptor are compared. Effect of the different donor and aeeeptor weight ratios on photo- voltaic performance of the P3HT：ICBA device is studied. The optimal device achieved power conversion emeiency of 5.51~o with dso of l0.86mA/cm2, Voc of 0.83 V, and fill factor （FF） of 61.1 % under AM 1.5G （lOOmW/cm2） simulated solar illumination. However, the stability measurement shows that cells based on P3HT：ICBA are less stable than those of the device based on P3HT：PCBM. Atomic force microscope results reveal that the morphol- ogy of the P3HT：ICBA film changed considerably during the storage periods due to unstable interpenetrating D-A network. This observation can be explained by the fact that there is lack of intermolecular hydrogen bonds in the P3HT：ICBA system. However, in the P3HT：PCBM system the molecules in the blend film are firmly held together in the solid state by means of intermoleeular hydrogen bonds originating from C-H. ~. Os bonds （where Os comes from the singly-bonded 0 atom of PCBM）, forming a stable three-dimensional network. The measured PL decay lifetimes for P3HT：PCBM and P3HT：ICBA systems are 33.66 ns and 35.34 ns, respectively, indicating that the P3HT：ICBA system has a less efficient exciton separation eftleiency than that of P3HT：PCBM, which may result in the interracial photogenerated charges accumulated on the D： A interface. Such progressive phase segregation between P3HT and ICBA eventually leads to the degradation in performance and deteriorates the stability of the device. We also present an approach to enhance the stability of P3HT：ICBA systems by adding PCBM as the second acceptor. Our results show that by carefully tuning the contents of PCBM as the second acceptor, more stable polymer solar cells

关键词： PCBM HT as for in of Hexylthiophene Performance and Stability of Polymer Solar Cells Based on the Blends of Poly Bis-Adduct on

Synthesis and characterization of calcium and manganese-doped rare earth oxide La_(1-x)Ca_xFe_(0.9)Mn_(0.1)O_(3-δ) for cathode material in IT-SOFC

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Journal of Rare Earths 2011年第11期29卷 1066-1069页

作者：赵捷李晨孔令龙吴雪薇马永昌 School of materials Science & Engineering Tianjin University of Technology tianjin key lab for photoelectric materials and devices key laboratory of Display materials and photoelectric devices(tianjin University of Technology) Ministry of Education

In order to develop novel cathode materials with high performance for intermediate temperature SOFC（IT-SOFC）,Ca and Mn doped rare earth oxides La1-xCaxFe0.9Mn0.1O3-δ（x=0.1,0.3 and 0.5,denoted as LCFM9191,LCFM7391 and LCFM5591） were synthesized by solid state reaction（SSR） *** formation process,phase structure and microstructure of the synthesized samples were characterized using thermogravimetry/differential scanning calorimetry（TG/DSC）,X-ray diffraction（XRD） and scanning electron microscopy（SEM）.The thermal expansion coefficients（TEC） of the samples were analyzed at 100-900 oC by thermal *** electrical conductivities of the samples were measured with direct current（DC） four-terminal method from 300 to 850 *** results indicated that the samples（x=0.1 and 0.3） exhibited a single phase with orthorhombic and cubic perovskite structure,respectively after being sintered at 1200 oC for 3 *** electrical conductivity of the samples increased with temperature up to a maximum value,and then *** small polaron hopping was regarded as the conducting mechanism for synthesized samples at T≤600 *** negative temperature dependence occurring at higher temperature was due to the creation of oxygen vacancies for charge ***7391 had higher mixed conductivity（100 S/cm） at intermediate temperature and could meet the demand of cathode material for *** addition,the average TECs of LCFM9191 and LCFM7391 were 11.9×10-6 and 13.1×10-6 K-1,respectively,which had good thermal match to the common electrolytes.

关键词： rare earth oxide solid state reaction perovskite structure mixed conductivity thermal expansion

White organic light-emitting device with both phosphorescent and fluorescent emissive layers

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Chinese Physics B 2008年第8期17卷 3097-3102页

作者：张丽娟华玉林吴小明王宇印寿根 key laboratory of Display materials and photoelectric devices Ministry of Education key laboratory of photoelectric materials and devices of tianjin Institute of Material Physics Tianjin University of Technology

This paper reports the fabrication of novel white organic light-emitting device（WOLED） by using a high efficiency blue fluorescent dye N-（4-（（E）-2-（6-（（E）-4-（diphenylamino）styryl）naphthalen-2-yl）vinyl）phenyl）oN- phenylbenzenamine （N-BDAVBi） and a red phosphoresecent dye bis （1-（phenyl） isoquinoline） iridium （III） acetylanetonate （Ir（piq）2（acac））. The configuration of the device was ITO/PVK：TPD/CBP： N-BDAVBi /CBP/ BALq： Ir（piq）2（acac）/BCP/Alq3/LiF：AL. By adjusting the proportion of the dopants （N-BDAVBi, Ir（piq）2（acac）） in the light-emitting layer, white light with Commission Internationale de l＇Eclairage （CIE） coordinates of （0.35, 0.35） and a maximum luminance of 25350cd/m2 were obtained external quantum and current efficiency of 6.78% and between the two light-emitting layers and using BCP at an applied voltage of 22V. The WOLED exhibits maximum 12cd/A respectively. By placing an undoped spacer CBP layer as hole blocking layer, the colour stabilization slightly changed when the driving voltage increased from 6 to 22 V.

关键词： WOLED colour stability N-BDAVBi

Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

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Chinese Physics B 2011年第10期20卷 426-429页

作者：焦志强吴晓明华玉林董木森苏跃举申利莹印寿根 School of materials Science and Engineering Tianjin University of Technology key laboratory of Display materials and photoelectric devices Ministry of Education tianjin key laboratory for photoelectric materials and devices

The efficiency of organic light-emitting devices （OLEDs） based on N,N＇-bis（1-naphthyl）-N,N＇-diphenyl-N,1＇- biphenyl-4,4＇-diamine （NPB）（the hole transport layer） and tris（8-hydroxyquinoline） aluminum （Alq3）（both emission and electron transport layers） is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device （without a LiF interlayer, 3.2 cd/A）. An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.

关键词： organic light-emitting devices LiF interlayer efficiency

The Observation of Small Polaron Tunnelling in the ab-Plane of K_(0.85)Fe_(1.66)Se_(2.0)

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Chinese Physics Letters 2013年第10期30卷 171-174页

作者： MA Yong-Chang YAN Qian ZHAO Jie LU Cui-Min School of materials Science and Engineering Tianjin University of TechnologyTianjin 300384 tianjin key lab for photoelectric materials and devices Tianjin 300384 key laboratory of Display materials and photoelectric devices(Ministry of Education) Tianjin University of TechnologyTianjin 300384

The temperature-dependent conductivity spectrum from 3×10^(2) Hz to 1×10^(8) Hz in the ab-plane of a K0.85Fe1.66Se2.0 single crystal is *** dc measurements indicate that the charge transport can be described well by the variable range hopping *** the ac conductivity spectrum,clear evidence for small polaron tunnelling with an activation energy of about 155 meV in ab-plane is *** decreasing temperature,the real part of the dielectric spectrum shifts towards lower frequencies and also shows a wider distribution of the relaxation *** 140 K,the peak position of the dielectric loss spectra begins to deviate from thermal excitation behavior,reflecting the freezing of the phonon which assists the tunnelling.

关键词： spectrum dielectric conductivity

Temperature- and Frequency-Dependent Dielectric Properties of La1.5Sr0.5NiO4-δ

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Chinese Physics Letters 2010年第8期27卷 218-221页

作者：马永昌张建柱赵捷刘庆锁 School of materials Science and Engineering Tianjin University of Technology Tianjin 300384 key laboratory of Display materials and photoelectric devices (Ministry of Education) Tianjin University of Technology Tianjin 300384 tianjin key lab for photoelectric materials and devices Tianjin 300384

We report the temperature-dependent resistivity and dielectric function （1 kHz- 3 MHz） of a charge ordering system La1.5Sr0.5NiO4-δ. The primary data of ac impedance was measured by a four-terminal pair arrangement. Above 180K, the resistivity is independent of frequency. At lower temperatures, the dielectric function couM not be fitted by a Debye model with a single relaxation time, it should have a distribution. At T = 130 K, there is a sudden increase in the p - T relation, meanwhile an anomaly dielectric response occurs on the temperature dependant dielectric spectrum in the whole measured frequency range, in which the dielectric constant has a high value even at high frequency region. Our analysis suggests that the current system would be more consistent with the Zener polaron model.

关键词： Temperature Models Measurement