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zinc injection to the primary circuit of pressure water reactor is an effective technique to mitigate stress corrosion cracking and reduce radiation field. It is known that the oxide film of stainless steel formed with chromium oxides and iron-nickel oxides shows a semiconductor behavior, and cave in the semiconductor is occupied by zinc instead of cobalt. This paper studies the semiconductor character of film formed on Type 304L stainless steel in high temperature water (HTW) containing zinc ions by electrochemistry method. Oxide films of 304L stainless steel is formed in HTW contained 1mM ZnSO4. All tests are carried out in boron buffered solution (pH8.4) at room temperature. Dynamic scan and Mott-Schottky scan are performed with 2273 potentiostat of Princeton. In the photocurrent test, light from xenon lamp goes through the monochromator and irradiates onto the working electrode. Monochromatic lights turn on intermittently to check the photocurrent response. Bias potential is applied on the work electrode and stepped from the top of passivation zone of polarization curve to the corrosion potential. Photocurrent response is recorded with pen recorder. SEM is used to inspect the surface of samples. The polarization curve results indicate that the passive film formed in zinc contained HTW has stronger corrosion resistance. With zinc treatment, Mott-Schottky plot shows the flat band moves to lower potential and the donor density which are calculated from Mott-Schottky data decreases. Photocurrent response shows the oxide file formed on stainless steel in HTW with zinc is the bilayer structures and shows an n-type semiconductor character, contrast to the film which formed on stainless steel in HTW without zinc and show the p-type semiconductor character. Band gaps of the passive film are also calculated from the photocurrent results. SEM pictures indicate that the oxides on the film in zinc contained HTW is less than the ones in non-zinc environment.

关键词： zinc injection high temperature water stainless steel passive film semiconductor character

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