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Realization of high aspect ratio metalenses by facile nanoimprint lithography using water-soluble stamps

PhotoniX 2023年第1期4卷 382-392页

作者： Hojung Choi Joohoon Kim Wonjoong Kim Junhwa Seong Chanwoong Park Minseok Choi Nakhyun Kim Jisung Ha Cheng-Wei Qiu Junsuk Rho Heon Lee Department of Materials Science and Engineering Korea UniversitySeoul 02841Republic of Korea Department of Mechanical Engineering Pohang University of Science and Technology(POSTECH)Pohang 37673Republic of Korea Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Department of Chemical Engineering Pohang University of Science and Technology(POSTECH)Pohang 37673Republic of Korea POSCO-POSTECH-RIST Convergence Research Center for Flat Optics and Metaphotonics Pohang 37673Republic of Korea National Institute of Nanomaterials Technology(NINT) Pohang 37673Republic of Korea ZERC Seoul 02841Republic of Korea

Nanoimprint lithography(NIL)has attracted attention recently as a promising fabrication method for dielectric metalenses owing to its low cost and high throughput,however,high aspect ratio(HAR)nanostructures are required to manipulate the full 2πphase of *** NIL using a hard-polydimethylsiloxane(h-PDMS)mold inevitably incurs shear stress on the nanostructures which is inversely proportional to the surface area parallel to the direction of ***,HAR structures are subjected to larger shear stresses,causing structural ***,we propose a novel wet etching NIL method with no detachment process to fabricate flawless HAR *** water-soluble replica mold is fabricated with polyvinyl alcohol(PVA)which is simpler than an h-PDMS mold,and the flexibility of the PVA mold is suitable for direct printing as its high tensile modulus allows high-resolution patterning of HAR *** diffraction-limited focusing of the printed metalenses demonstrates that it operates as an ideal lens in the visible *** method can potentially be used for manufacturing various nanophotonic devices that require HAR nanostructures at low cost and high throughput,facilitating commercialization.

关键词： Nanoimprint lithography wet etching Polyvinyl alcohol High fidelity nanofabrication High aspect ratio nanostructure Metalens

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etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

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Journal of Semiconductors 2002年第7期23卷 707-712页

作者：沈晓明冯志宏冯淦付羿张宝顺孙元平张泽洪杨辉中国科学院半导体研究所集成光电子国家重点实验室

wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are *** samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a *** based solutions produce rectangular pits rather than square *** etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal *** explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching *** addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal *** explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching *** addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.

关键词： cubic GaN MOVPE wet etching asymmetry

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