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检索条件"主题词=wet etching"
22 条 记 录,以下是1-10 订阅
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wet etching and passivation of GaSb-based very long wavelength infrared detectors
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Chinese Physics B 2022年 第6期31卷 132-136页
作者: Xue-Yue Xu Jun-Kai Jiang Wei-Qiang Chen Su-Ning Cui Wen-Guang Zhou Nong Li Fa-Ran Chang Guo-Wei Wang Ying-Qiang Xu Dong-Wei Jiang Dong-Hai Wu Hong-Yue Hao Zhi-Chuan Niu State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been *** studying the effect of each component in the citric acid solution(ci... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions
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Journal of Semiconductors 2010年 第3期31卷 107-111页
作者: 李永亮 徐秋霞 Institute of Microelectronics Chinese Academy of Sciences
The wet etching properties ofa HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based sol... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Fabrication of Nanoscale Step Height Structure Using Atomic Layer Deposition Combined with wet etching
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Chinese Journal of Mechanical Engineering 2016年 第1期29卷 91-97页
作者: WANG Chenying YANG Shuming JING Weixuan REN Wei LIN Qijing ZHANG Yijun JIANG Zhuangde State Key Laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Xi'an Jiaotong University
The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Improvement in a-plane GaN crystalline quality using wet etching method
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Chinese Physics B 2014年 第4期23卷 593-597页
作者: 曹荣涛 许晟瑞 张进成 赵一 薛军帅 哈微 张帅 崔培水 温慧娟 陈兴 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University
Nonpolar (1120) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of th... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
wet Chemical etching of Antimonide-Based Infrared Materials
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Chinese Physics Letters 2015年 第10期32卷 102-105页
作者: 郝宏玥 向伟 王国伟 徐应强 任正伟 韩玺 贺振宏 廖永平 魏思航 牛智川 State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026
The roughness and the crystallographic orientation selectivity of etched antimonide-based infrared materials are examined and are used to optimize the chemical mesa etching process of the InAs/GaSb superlattice photod... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface
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Journal of Semiconductors 2011年 第2期32卷 61-64页
作者: 汪炼成 郭恩卿 刘志强 伊晓燕 王国宏 Lighting Research and Development Center Institute of SemiconductorsChinese Academy of Sciences
Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened an... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching
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Journal of Semiconductors 2015年 第7期36卷 98-102页
作者: 李翔 赵德刚 江德生 陈平 刘宗顺 朱建军 侍铭 赵丹梅 刘炜 张书明 杨辉 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences
The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Rear-surface light intensification caused by a Hertzian-conical crack in 355-nm silica optics
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Chinese Physics B 2012年 第9期21卷 321-327页
作者: 章春来 袁晓东 向霞 王治国 刘春明 李莉 贺少勃 祖小涛 School of Physical Electronics University of Electronic Science and Technology of China Research Center of Laser Fusion China Academy of Engineering Physics
Theoretical studies show that a Hertzian-conical crack can be considered to be composed of double cone faces for simplicity. In the present study, the three-dimensional finite-difference time-domain method is employed... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
TaN wet etch for application in dual-metal-gate integration technology
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Journal of Semiconductors 2009年 第12期30卷 133-136页
作者: 李永亮 徐秋霞 Institute of Microelectronics Chinese Academy of Sciences
wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/H... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
High Yield Transfer of Clean Large-Area Epitaxial Oxide Thin Films
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Nano-Micro Letters 2021年 第2期13卷 363-376页
作者: Bowen Zhang Chao Yun Judith L.MacManus-Driscoll Department of Materials Science and Metallurgy University of Cambridge27 Charles Babbage RoadCambridge CB30FSUK
In this work,we have developed a new method for manipulating and transferring up to 5 mm×10 mm epitaxial oxide thin *** method involves fixing a PET frame onto a PMMA attachment film,enabling transfer of epitaxial fi... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论