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High-performance broadband photodetector based on PtSe2/MoS2 heterojunction from visible to near-infrared region

Science China(Information Sciences) 2024年第3期67卷 263-270页

作者： Bin WANG Jian YUAN Mengqi CHE Mingxiu LIU Yuting ZOU Junru AN Fan TAN Yaru SHI Nan ZHANG Liujian QI Shaojuan LI State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences State Key Laboratory of Applied Optics Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences School of Physics and Electronic Information Huaibei Normal University

Broadband photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices. However, their large dark current hinders device performance. In this work, a PtSe2/MoS2heterojunction was fabricated for a broadband photodetector operating within the range of visible to near-infrared. The device exhibited suppressed dark currents with a high rectification ratio of 104. The built-in electric field of the heterojunction promoted carrier separation effectively, and the device achieved excellent photoelectric performance with responsivities of 1.7 × 103,27.52, and 21 mA/W at 635, 785, and 1550 nm wavelengths, respectively. Moreover, the specific detectivities(D*) were 2.2 × 1013Jones(635 nm), 3.55 × 1011Jones(785 nm), and 2.72 × 108Jones(1550 nm). The device demonstrated a rise/fall time of 131/241 μs under 1550 nm laser illumination. visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature. This work sheds light on the remarkable potential of PtSe2/MoS2heterojunctions in the domain of high-performance broadband photodetectors.

关键词： photodetector PtSe$_{2}$/MoS$_{2}$ heterojunction visible to near infrared high performance

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