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Polymer nanowire vertical transistors

Nano Research 2014年第6期7卷 938-944页

作者： Husande Li Tzushan Chen Yuchiang Chao Department of Physics and Center for Nano-Technology Chung Yuan Christian University Chung-Li 32023 Taiwan China

By utilizing poly（3-hexylthiophene）（P3HT） polymer nanowires with diameters of -15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V.

关键词： polymer nanowires vertical transistors polystyrene spheres colloidal lithography

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Graphene-based vertical thin film transistors

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Science China(Information Sciences) 2020年第10期63卷 42-53页

作者： Liting LIU Yuan LIU Xiangfeng DUAN Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education School of Physics and ElectronicsHunan University Department of Chemistry and Biochemistry University of California

vertical field effect transistors(VFETs), where the channel material is sandwiched between source-drain electrodes and the channel length is simply determined by its body thickness, have attracted considerable interest for high performance electronics owning to their intrinsic short channel length. To enable the effective gate modulation and current switching behavior, the electrode of conventional VFET is largely based on perforated metals, in which the gate electrical field could penetrate through. Recently,with the emerge of graphene, a new type of graphene based VFETs has been developed. With finite density of states and the weak electrostatic screening effect, graphene exhibits a field-tunable work-function and partial electrostatic transparency, it can thus function as an "active" contact with tunable graphene-channel junction, enabling entirely new transistor functions or higher device performance not previously *** this review, we discuss the research progresses of graphene-based VFET, including the its basic device structure, carrier transport mechanism, device performance and novel properties demonstrated.

关键词： graphene electrode vertical transistors thin film transistors van der Waals heterostructures

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