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Effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb

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Transactions of Nonferrous Metals Society of China 2015年第12期25卷 4040-4045页

作者： C.W.NAHM Semiconductor Ceramics Laboratory Department of Electrical Engineering Dongeui University

The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.

关键词： Zn-V-O-based ceramics Mn-Nb-Tb sintering varistor properties dielectric characteristics varistor

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Effects of Composition of ZnO Ceramics Containing TiO_2 onvaristor properties

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Journal of Wuhan University of Technology(Materials Science) 2001年第1期16卷 5-9页

作者：徐庆 sl.ap-hop-paris.fr

The development of low-voltage ZnO varistor ceramics containing TiO2 is presented in this report. The varistor properties of ZnO ceramics with different compositions were measured, and microstructure of the ceramics was investigated by XRD and SEM. The results show that the addition of TiO2 is beneficial to the decrease of varistor voltage (V1mA). whereas it leads to the recession of nonlinear coefficient (α) and leakage current (lL). The varistor properties of ZnO ceramics containing TiO2 can be effectively improved by introducing moderate amount of pre-fabricated ZnO seed grains. The behaviors of TiO2 and seed grains, as well as the mechanisms by which TiO2 and seed grains influence varistor properties, are discussed.

关键词： ZnO ceramics varistor properties TiO_2 seed grains low voltage

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Preparation and characterization of Mg-doped CaCu_(3)Ti_(4)O_(12) thin films

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Transactions of Nonferrous Metals Society of China 2022年第5期32卷 1589-1597页

作者： Ming JIANG Zhan CHENG Dan ZHAO Lei ZHANG Dong XU Key Laboratory of Metallurgical Emission Reduction&Resources Recycling Ministry of EducationAnhui University of TechnologyMa’anshan 243002China School of Materials Science and Engineering Anhui Polytechnic UniversityWuhu 241000China China Innovation Academy of Intelligent Equipment(Ningbo)Co. Ltd.Ningbo 315700China

Mg-doped CaCu_(3-x)Mg_(x)Ti_(4)O_(12)(x=0,0.05,0.1,0.15,0.2,at.%)thin films were prepared by a modified sol−gel method.A comparative study on the microstructure and electrical properties of Mg-doped CaCu_(3)Ti_(4)O_(12)(CCTO)thin films was carried *** grain sizes of the Mg-doped CCTO thin films were smaller in comparison to the undoped CCTO ***,compared to undoped CCTO films,Mg-doped CCTO thin films obtained higher dielectric constant as well as excellent frequency ***,Mg doping could reduce the dielectric loss of CCTO thin films in the frequency range of 104−106 *** results showed that the Mg-doped CCTO thin films had the better electrical characteristics compared with the undoped CCTO *** nonlinear coefficient of Mg-doped CCTO thin films at x=0.15 and x=0.1 was improved to 7.4 and 6.0,respectively.

关键词： dielectric material CaCu_(3)Ti_(4)O_(12) Mg doping dielectric constant dielectric loss varistor properties

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