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Selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2

Nano Research 2019年第11期12卷 2781-2787页

作者： Guangzhuang Sun Bo Li Shifa Wang Zhengwei Zhang Jia Li Xidong Duan Xiangfeng Duan State Key Laboratory for Chemo/Biosensing and Chemometrics and Hunan Key Laboratory of Two Dimensional Materials College of Chemistry and Chemical EngineeringHunan UniversitChangsha 410082China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Electronic and Information Engineering Chongqing Three Gorges UniversityChongqing Wanzhou 404000China Department of Chemistry and Biochemistry University of CaliforniaLos AngelesCalifornia 90095USA

Heterostructures combined by different individual two-dimensional(2D)materials are essential building blocks to realize unique electronic,optoelectronic properties and multifunctional *** date,the direct growth of 2D/2D atomic van der Waals heterostructures(vdWHs)have been extensively ***,the heterostructures from 2D inorganic molecular crystals and atomic crystals have been rarely *** we report two-step direct epitaxial growth of the inorganic molecular-atomic Sb2O3/WS2 *** thickness of Sb2O3 nanosheets on WS2 nanosheets can be tuned by variable growth *** growth behavior of Sb2O3 on WS2 was determined through *** images,Raman spectra,Raman mappings and selected-area electron diffraction(SAED),etc.,reveal that Sb2O3/WS2 heterostructures are vertically stacked with high crystal *** transport measurements demonstrate that the heterotransistors based on the heterostructures possess high current on/off ratio of 5 × 10^5,obvious gate-tunable and current rectification output *** characterizations show that the heterostructures have a clear photoresponse with high responsivity of 16.4 *** growth of vdWHs from 2D inorganic molecular-atomic crystals may open up new opportunities in 2D functional electronics and optoelectronics.

关键词： vapor phase epitaxy selective growth Sb2O3/WS2 heterostructures band alignment rectification effect

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Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE

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Chinese Optics Letters 2003年第1期1卷 21-23页

作者：于永芹张晓阳黄柏标尉吉勇周海龙潘教青秦晓燕任忠祥 State Key Laboratory of Crystal Materials Shandong University Jj'nan 250100 State Key Laboratory of Crystal Materials Shandong University Jj'nan 250100 Shandong Huaguang Optoelectronic Ltd. Ji'nan 250101 State Key Laboratory of Crystal Materials Shandong University Ji'nan 250100 State Key Laboratory of Crystal Materials Shandong UniversityJj'nan 250100 Shandong Huaguang Optoelectronic Ltd. Ji'nan 250101 Shandong Huaguang Optoelectronic Ltd. Ji'nan 250101

InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAsmultiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy(MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had beenpartly accommodated by the misfit dislocation formation in the strained MQW material. It led to thatthe full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQWstructures, and there was no detectable room temperature photoluminecence(RT-PL)for the strained

关键词： Quantum well lasers vapor phase epitaxy X ray diffraction

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