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Self-powered and bipolar photodetector based on a van der waals metal-semiconductor junction:Graphene/WSe_(2)/Fe_(3)GeTe_(2) heterojunction

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Science China(Technological Sciences) 2022年第6期65卷 1263-1272页

作者： XU GuoLiang LIU DanMin LI JingZhen LI JingJie YE ShuaiShuai Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Key Laboratory of Optoelectronics Technology College of MicroelectronicsFaculty of Information TechnologyBeijing University of TechnologyBeijing 100124China

A self-driven photosensor with signal-reversal response has the potential to work as a photodetector in complex environments with multiple signals owing to better signal recognition and enhanced signal-processing efficiency.Herein,a metal-semiconductor-metal photodetector based on ambipolar WSe_(2) with two electrodes comprising two-dimensional(2 D) van der waals(vdWs) metal Fe_(3)GeTe_(2) and semimetal graphene was proposed to form an asymmetrical metal-contacted architecture with different Schottky barrier heights.The regulating gate field-induced Fermi level shift in WSe_(2) can be used to manipulate the WSe_(2) channel’s carrier type,resulting in a polarity-reversible photodetector without a bias voltage.Furthermore,the photovoltaic effect can be observed from wavelengths of 450 nm(visible) to 850 nm(infrared) without external voltage.The large open voltage is -0.177 V and short-circuit current is 17 nA under a 650-nm excitation wavelength.The reported WSe_(2)-based photodetector exhibits excellent properties under zero bias,including a large photo-to-dark current ratio greater than 10^(6) with dark current less than 1 fA,photovoltaic performance with an external quantum efficiency of 27.14%,an excellent detectivity of 3.4×10^(10) Jones,and a high responsivity of 116.38 mA/W.Rapid electron transfer occurs at the interface between WSe_(2) and vd Ws electrodes,resulting in a 370-μs response speed owing to the clean and nondestructive interfaces between vd Ws metals and WSe_(2).This study demonstrates the wide application prospect of the vd Ws metal Fe_(3)GeTe_(2) as an electrode forming a Schottky junction for realizing a photodetector without an external voltage and accelerates the development of 2 D photosensors with various working modes.

关键词： photodetector zero-biased WSe_(2) polarity-reversible van der waals electrodes

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