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Janus monolayer TaNF:A new ferrovalley material with large valley splitting and tunable magnetic properties

Frontiers of physics 2023年第5期18卷 173-181页

作者：郑贵博蘧水仙周文哲欧阳方平 School of Physics and Electronics and Hunan Key Laboratory for Super-Microstructure and Ultrafast Processand Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China School of Physics and Technology Xinjiang UniversityUrumqi 830046China State Key Laboratory of Powder Metallurgy and Powder Metallurgy Research InstituteCentral South UniversityChangsha 410083China

Materials with large intrinsic valley splitting and high Curie temperature are a huge advantage for studying valleytronics and practical *** this work,using first-principles calculations,a new Janus TaNF monolayer is predicted to exhibit excellent piezoelectric properties and intrinsic valley splitting,resulting from the spontaneous spin polarization,the spatial inversion symmetry breaking and strong spin-orbit coupling(SOC).TaNF is also a potential two-dimensional(2D)magnetic material due to its high Curie temperature and large magnetic anisotropy *** effective control of the band gap of TaNF can be achieved by biaxial strain,which can transform TaNF monolayer from semiconductor to *** magnitude of valley splitting at the CBM can be effectively tuned by biaxial strain due to the changes of orbital composition at the *** magnetic anisotropy energy(MAE)can be manipulated by changing the energy and occupation(unoccupation)states of d orbital compositions through biaxial *** addition,Curie temperature reaches 373 K under only−3%biaxial strain,indicating that Janus TaNF monolayer can be used at high temperatures for spintronic and valleytronic devices.

关键词： Janus valley splitting Curie temperature magnetic anisotropy energy first-principles calculations

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Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

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Chinese Physics B 2023年第10期32卷 126-133页

作者：王刚管闪宋志刚骆军委 State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The achievement of universal quantum computing critically relies on ***,ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy(E_(VS))across quantum dot arrays,which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin *** E_(VS)fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum *** this study,employing atomistic pseudopotential calculations,we unveil a significant spectrum of E_(VS)even in the absence of such concentration *** spectrum represents the lower limit of the wide range of E_(VS)observed in numerous Si/SiGe quantum *** constructing simplified interface atomic step models,we analytically demonstrate that the lower bound of the E_(VS)spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers——an inherent characteristic that has been previously ***,we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E_(VS)by inserting a few monolayers of pure Ge barrier at the Si/SiGe *** findings provide valuable insights into the critical role of in-plane randomness in determining E_(VS)in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.

关键词： quantum wells valley splitting alloy concentration fluctuation

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Probing magnetic-proximity-effect enlarged valley splitting in monolayer WSe2 by photoluminescence

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Nano Research 2018年第12期11卷 6252-6259页

作者： Chenji Zou Chunxiao Cong Jingzhi Shang Chuan Zhao Mustafa Eginligil Lishu Wu Yu Chen Hongbo Zhang Shun Feng Jing Zhang Hao Zeng Wei Huang Ting Yu Shaanxilnstitute of Flexible Electronics (SIFE) Northwestern Polytechnical University (NPU)127West Youyi RoadXi'an 710072China Division of Physics andApplied Physics School of Physical and Mathematical SciencesNanyang Technological University21Nanyang LinkSingapore 637371Singapore State Key Laboratory ofASIC & System School of Information Science and TechnologyFudan UniversityShanghai200433China Department of Physics University at BuffaloState University of New YorkBuffaloNew York I#260USA Key Laboratory of Flexible Electronics (KI.OFE)&Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Centre for Advanced Materials (SICAM)Nanjing Tech University (NanjingTech)30South Puzhu RoadNanjing 211816China

Possessing a valley degree of freedom and potential in information processing by manipulating valley features (such as valley splitting), group-VI monolayer transition metal dichalcogenides have attracted enormous interest. This valley splitting can be measured based on the difference between the peak energies of σ+ and σ− polarized emissions for excitons or trions in direct band gap monolayer transition metal dichalcogenides under perpendicular magnetic fields. In this work, a well-prepared heterostructure is formed by transferring exfoliated WSe2 onto a EuS substrate. Circular-polarization-resolved photoluminescence spectroscopy, one of the most facile and intuitive methods, is used to probe the difference of the gap energy in two valleys under an applied out-of-plane external magnetic field. Our results indicate that valley splitting can be enhanced when using a EuS substrate, as compared to a SiO2/Si substrate. The enhanced valley splitting of the WSe2/EuS heterostructure can be understood as a result of an interfacial magnetic exchange field originating from the magnetic proximity effect. The value of this magnetic exchange field, based on our estimation, is approximately 9 T. Our findings will stimulate further studies on the magnetic exchange field at the interface of similar heterostructures.

关键词： valley splitting transition metal dichalcogenides magnetic proximity effect heterostructure magnetic exchange field

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Spatial variations of valley splitting in monolayer transition metal dichalcogenide

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InfoMat 2020年第3期2卷 585-592页

作者： Chenji Zou Hongbo Zhang Yu Chen Shun Feng Lishu Wu Jing Zhang Ting Yu Jingzhi Shang Chunxiao Cong Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingaporeSingapore Institute of Flexible Electronics Northwestern Polytechnical UniversityXi'anShaanxiChina State Key Laboratory of ASIC and System School of Information Science and TechnologyFudan UniversityShanghaiChina

In monolayer group-VI transition metal dichalcogenides(TMDs),valley splitting features have received a lot of attention since it can be potentially utilized for information storing and *** the known two-dimensional(2D)TMDs,monolayer WSe2 or MoSe2 has been mostly selected for excitonic and valleytronic physics studies because of its sharp and well-resolved excitonic spectral ***,their high optical quality leads to a tremendous desire for developing promising WSe2-and MoSe2-based valleytronic *** this goal,exploring the uniformity of valley features crossing an entire piece of monolayer becomes necessary and ***,we performed the systematic magnetophotoluminescence mapping measurements on mechanically exfoliated monolayer WSe2 and observed unconventional spatial variations of valley *** observed nonuniformity is attributed to the modulated doping,which is probably due to the different distributions of unintentional absorbates across the *** an unexpected doping effect shows the nonnegligible influence on the valley Zeeman splitting of the trion emission(XT)while affecting that of the neutral exciton emission(X0)trivially,evidencing for the large valleytronic sensitivity of the charged *** work not only enriches the understanding of the doping effect on valley splitting but also is meaningful for developing 2D valleytronics.

关键词： doping effect monolayer WSe2 photoluminescence transition metal dichalcogenide valley splitting

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Anisotropic refraction and valley-spin-dependent anomalous Klein tunneling in a 1T'-MoS_(2)-based p–n junction

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Chinese Physics B 2022年第7期31卷 505-508页

作者：戚凤华周兴飞 School of Electronic Engineering Nanjing Xiaozhuang UniversityNanjing 211171China New Energy Technology Engineering Laboratory of Jiangsu Province School of ScienceNanjing University of Posts and TelecommunicationsNanjing 210023China

We investigate the transport properties of electron in a 1T'-MoS_(2)-based p–n *** anisotropic refraction of electron is found when the electron beam crosses the p–n junction,which brings the phenomenon of valley splitting without any external ***,it is found that the valley-spin-dependent anomalous Klein tunneling,i.e.,the perfect transmission exists at a nonzero incident angle of valley-spin-dependent electron,happens when the vertical electric field is equal to the critical electric *** two peculiar properties arise from the same reason that the tilted band structure makes the directions of wavevector and velocity *** work designs a special valley splitter without any external fields and finds a new type of Klein tunneling.

关键词： 1T'-MoS_(2) anisotropic refraction valley splitting Klein tunneling

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