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Bioinformatics Analysis and Identification of Key Candidate Genes Associated with Nephrotoxicity Induced by Cobalt

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Biomedical and Environmental Sciences 2023年第2期36卷 201-205页

作者： WANG Rui ZHANG Ding ZHUGE Rui Jian XUE Qian HE Chang Hao MA Wen Xuan SHEN Zhu Bin GUO Li Department of Toxicology School of Public HealthJilin UniversityChangchun 130021JilinChina Department of Spine Surgery China-Japan Union HospitalJilin UniversityChangchun 130033JilinChina Department of Security Xiamen Rehabilitation HospitalXiamen 36100FujianChina

Cobalt(Co)is a silver-gray,high-intensity,widely distributed metal element that exists in cobalt compounds,and its common valences are bivalence(Co2+)and trivalence(Co3+)[1].The main routes of Co-exposure are occupational and environmental exposures.The human body can be exposed to high concentrations of Co2+through inhalation of contaminated air,consumption of contaminated food and water,or ingestion of Co-containing supplements[2].

关键词： valence silver cobalt

What emotion dimensions can affect working memory performance in healthy adults?A review

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World Journal of Clinical Cases 2022年第2期10卷 401-411页

作者： Tian-Ya Hou Wen-Peng Cai Faculty of Psychology The Second Military Medical UniversityShanghai 200433China

Due to the critical roles of emotion and working memory in our daily activities,a great deal of attention has been given to how emotion influences working memory performance.Although the association between emotion and working memory is relatively well established,whether mood enhances or impairs working memory performance remains controversial.The present review provides a relatively representative overview of the research on the effect of different dimensions of emotion on working memory among healthy adults spanning a 30-year period.The findings show that the valence,arousal and motivational dimensions of emotion could all exert an impact on working memory performance.The impact of emotion on working memory might be modulated by task relevance,emotion type,working memory paradigms and individual differences.The vast majority of the studies regarding the effect of emotion on working memory performance focused on the impact of negatively valenced affect and yielded highly contradictory findings.The impacts of arousal and motivation on working memory have been less explored,and inconsistent findings have also been reported.Possible explanations are discussed.Considerable research on the effect of certain dimensions of emotion on working memory has suffered from a lack of control of other emotional dimensions,and different aspects of working memory have been investigated by various paradigms.Directions for further studies should include the exploration of specific dimensions of emotion on different aspects of working memory,with the other dimensions being well controlled.

关键词： Working memory Emotion valence Arousal Motivation Review

valence electron structure and properties of stabilized ZrO_2

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维普期刊数据库

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Science China(Technological Sciences) 2008年第7期51卷 1008-1016页

作者： LI JinPing, HAN JieCai, MENG SongHe & ZHANG XingHong Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, China Center for Composite Materials Harbin Institute of Technology Harbin China

To reveal the properties of stabilizers in ZrO2 on nanoscopic levels, the valence electron structures of four stable ZrO2 phases and c-ZrO2 were analyzed on the basis of the empirical electron theory of solids and molecules. The results showed that the hybridization levels of Zr atoms in c-ZrO2 doped with Ca and Mg dropped from B17 to B13, the hybridization levels of Zr atoms in c-ZrO2 doped with Y and Ce dropped from B17 to B15, and that the four stabilizing atoms all made the hybridization levels of O atoms drop from level 4 to level 2. The numbers of covalent electrons in the strongest covalent bond in the descending order are c-ZrO2>Zr0.82Ce0.18O2> Zr0.82Y0.18O1.91>Zr0.82Mg0.18O1.82>Zr0.82Ca0.18O1.82. The bond energies of the strongest covalent bond and the melting points of the solid solutions in the descending order are Zr0.82Ce0.18O2> c-ZrO2>Zr0.82Y0.18O1.91>Zr0.82Mg0.18O1.82>Zr0.82Ca0.18O1.82. The percent-ages of the total number of covalent electrons in the descending order are c-ZrO2>Zr0.82Y0.18O1.91> Zr0.82Ce0.18O2>Zr0.82Mg0.18O1.82> Zr0.82Ca0.18O1.82. From the above analysis, it can be concluded that the stabilizing degrees of the four stabilizers in the descending order are CaO> MgO>Y2O3>CeO2.

关键词： c-ZrO2 empirical electron theory bond length difference valence electron structure properties

valence electron structure and bonding features of RuB2 and OSB2: The empirical electron theory calculations

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Science China(Technological Sciences) 2010年第7期53卷 1877-1885页

作者： LUO XiaoGuang, LI JinPing, HU Ping & DONG ShanLiang Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, China Center for Composite Materials Harbin Institute of Technology Harbin China

The valence electron structure (VES) of RuB2 and OsB2 were calculated by the empirical electron theory (EET) of solids and molecules and compared with the results derived from the first-principles calculations. The distributions of covalent electrons in different bonds indicate that B-B and B-Me have remarkably covalent bonding characters. Lattice electrons cruising around Me-Me layers are found to have great influences on electronic conductivity and high temperature plasticity. The ultra-high values of elastic constant Cn in the two compounds originate from close-packed covalent bonding along the c axis. Uneven bond strengths and distributions of covalent bonds, especially for B-Afe bonds, yield significant anisotropy. Low ratios of lattice electrons to covalent electrons suggest the intrinsic embrittlement in crystals. The fact that the calculated cohesive energies well agree with experimental results demonstrates the good suitability of the EET calculations in estimating cohesive energy for transition-metal borides.

关键词： empirical electron theory (EET) of solid and molecules valence electron structure (VES) cohesive energy anisotropy diborides of ruthenium and osmium (RuB2 and OsB2)

valence bond theoretical study for chemical reactivity

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Science China Chemistry 1998年第6期41卷 660-669页

作者：曹泽星吴玮张乾二 Department of Chemistry State Key Laboratory for Physical Chemistry of the Solid Surface Institute of Physical Chemistry Xiamen University Xiamen China

Based on the symmetry of the valence bond wavefunction and the correspondence between bonding patterns and bonded tableaus for chemical bonds in the ground and excited states, the conservation of orbital symmetry and the bond symmetry rule can be expressed as "symmetry-adaptation of the valence bond (VB) structure". The symmetry-adaptation of the valence bond structure can directly predict the chemical reactivity by a symmetry analysis of the VB structures of reactants and products without carrying out explicitly theoretical calculations. Curve-crossing diagrams for atom exchange reactions H+HLi→H-2+Li and H+LiH→HLiH (cyclic)→HLi+H have been constructed with the multistructure VB approach and the valence bond structure symmetry rule. The formation mechanism of the barrier and the transition state was discussed. The calculated results show that the H exchange reaction H+LiH HLi+H is a two-step reaction.

关键词： symmetry-adaptation of the valence bond structure reactivity curve-crossing VB diagram.

valence electron structure of cementite phase and its interface and the tempering phenomenon

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Science China(Technological Sciences) 2002年第3期45卷 282-290页

作者：李志林刘志林刘伟东 Beijing University of Chemical Technology Beijing 100029 China Department of Materials Science and Engineering Liaoning Institute of Technology Jinzhou 121001 China

Tempering is an important phenomenon in ferrous alloys. Most steels, especially alloy-ing steels, are used after quenching and tempering. To design the composition of quenching andtempering steels, control the tempering process more effectively, improve the properties aftertempering and realize the potentials of steels, the essence of tempering process and the proper-ties of tempering products have to be understood. In this paper, the phase structure factors andinterface conjunction factors of common alloying elements in cementite and its interface are calcu-lated out. The relationships between these valence electron structure parameters and (i) thephenomena of martensite decomposition, (ii) transformation, gathering and growth of the carbidesand (iii) the mechanical properties of tempering products are built up. The nature of the effect ofalloying elements on tempering process and properties of tempering products is uncovered on thelevel of valence electron structure. One new theoretical foundation for alloy design is provided.

关键词： valence electron structure, tempering, cementite, interface, mechanical property.

valence electron structure and properties of the ZrO_2

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Science China(Technological Sciences) 2008年第11期51卷 1858-1866页

作者： LI JinPing, MENG SongHe, HAN JieCai & ZHANG XingHong Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, China Center for Composite Materials Harbin Institute of Technology Harbin China

To reveal the properties of ZrO2 at the atom and electron levels, the valence elec- tron structures of three ZrO2 phases were analyzed on the basis of the empirical electron theory of solids and molecules. The results showed that the hybridization levels of Zr and O atoms in the m-ZrO2 were the same as those in the t-ZrO2, while those in the c-ZrO2 rose markedly. The electron numbers and bond energies on the strongest covalent bonds in the m-ZrO2 phase were the greatest, the values were 0.901106 and 157.5933 kJ/mol, respectively. Those in the t-ZrO2 phase took second place, which were 0.722182 and 123.9304 kJ/mol, and those in the c-ZrO2 phase were the smallest, which were 0.469323 and 79.0289 kJ/mol. According to the product of the bond energy on the strongest covalent bond and equivalent bond number (this value reflected the crystal cohesive energy), the order from the greatness to smallness was the c-ZrO2> t-ZrO2 > m-ZrO2. This showed that the m-phase bonds were the tightest, their energy was the smallest, the crystal cohe- sive energy of the m-phase was the largest, and the m-phase existed most stably at room temperature. So it must need energy or higher temperature to take apart the stronger covalent bonds to form a new phase.

关键词： ZrO2 empirical electron theory bond length difference valence electron structure properties

valence electronic structure of tantalum carbide and nitride

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Science China(Physics,Mechanics & Astronomy) 2007年第6期50卷 737-741页

作者： FAN ChangZeng1,2,SUN LiLing2,WEI ZunJie1,MA MingZhen3,LIU RiPing3,ZENG SongYan1 & WANG WenKui3 1 Department of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China 2 National Laboratory for Superconductivity,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China 3 National Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qin-huangdao 066004,China Department of Materials Science and Engineering Harbin Institute of Technology Harbin China National Laboratory for Superconductivity Institute of Physics Chinese Academy of Sciences Beijing China National Key Laboratory of Metastable Materials Science and Technology Yanshan University Qinhuangdao China

The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent,metallic and ionic characters. For a quantitative analysis of the relative strength of these components,their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN,which coincides to that de-duced from the first-principles method.

关键词： TaC, TaN, valence electronic structure, ionicity The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……

valence band structure of strained Si/(111)Si_(1-x)Ge_x

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Science China(Physics,Mechanics & Astronomy) 2010年第3期53卷 454-457页

作者： SONG JianJun, ZHANG HeMing, HU HuiYong, DAI XianYing & XUAN RongXi Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China

The strained Si techique has been widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E-k relations of strained Si/(111)Si1-xGex, the valence band and hole effective mass along the [111] and [-110] directions were obtained in this work. In comparison with the relaxed Si, the valence band edge degeneracy was partially lifted, and the significant change was observed band structures along the [111] and [-110] directions, as well as in its corresponding hole effective masses with the increasing Ge fraction. The results obtained can provide valuable references to the investigation concerning the Si-based strained devices enhancement and the conduction channel design related to stress and orientation.

关键词： KP method valence band hole effective mass