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Journal of Materials Science & Technology 2022年第4期99卷 260-269页

作者： Zhongting Shi Gan Sun Ruiwen Yuan Wenxiao Chen Zhuo Wang Lu Zhang Ke Zhan Min Zhu Junhe Yang Bin Zhao School of Materials Science and Engineering University of Shanghai for Science and TechnologyShanghai 200093China

Durable and cost-effective electrode materials are essential for practical application of ***,large area NiCo_(2)O_(4)/reduced graphene oxide(NiCo_(2)O_(4)/rGO)composites with hierarchical structure were fabricated by a facile one-step ultrasonic spray on Ni foam and directly used as the binder-free electrodes for supercapacitors in aqueous KOH *** to high electrical conductivity of rGO,hierarchical and layered structure of the electrode,as well as tight adhesion of active materials on the current collector,the as-obtained hybrid electrodes show a high specific capacitance of 871 F g^(-1)at current density of 1 A g^(-1),good rate performance and remarkable cycling stability with a capacitance retention of 134%after 30000 ***,the assembled NiCo_(2)O_(4)/rGO//AC asymmetric supercapacitor(ASC)displays the maximum energy density of 29.3 Wh kg^(-1)at a power density of 790.8 W kg^(-1).Significantly,an ultralong cycling life of 102%capacitance retention is achieved for the ASC device after 30,000 charge/discharge cycles at 20 A g^(-1).The scalable fabrication route and excellent electrochemical performance of the NiCo_(2)O_(4)/rGO composites open the door for making novel hybrid electrodes of advanced supercapacitors.

关键词： ultrasonic spray NiCo_(2)O_(4)/rGO Binder-free electrode Supercapacitor

Correlation between the structural, morphological, optical, and electrical properties of In_2O_3 thin films obtained by an ultrasonic spray CVD process

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Journal of Semiconductors 2015年第8期36卷 9-14页

作者： A.Bouhdjer A.Attaf H.Saidi H.Bendjedidi Y.Benkhetta I.Bouhaf Laboratory of Semiconductors Materials University of Med Kheider

Indium oxide （In2O3） thin films are successfully times by an ultrasonic spray technique using Indium chloride deposited on glass substrate at different deposition as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrys- talline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the （222） plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the （400） plane. The surface morphology of the In2O3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The trans- mittance improvement of In2O3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity （10-2 Ω.cm）, and relatively high transmittance （- 93%）.

关键词： indium oxide deposition time ultrasonic spray optical and electrical properties

Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis

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Journal of Semiconductors 2017年第6期38卷 18-23页

作者： Z.Hadef K.Kamli A.Attaf M.S.Aida B.Chouial Laboratoire des Semi-Conducteurs Faculte des Sciences Universite Badji Mokhtar Annaba Algeria Laboratoire de physique des couches minces et applications LPCMA Universite de Biskra Algeria Laboratoire de Couches Minces et Interfaces Faculte des Sciences Universite de Constantine Algeria

Thin films of SnSx,semiconductors,have been successfully synthesized by ultrasonic spray pyrolysis technique,using two precursors namely：tin（II）chloride and tin（IV）chloride,*** solutions were prepared by the dilution of different Sn molarities of the two precursors *** precursor molarities were varied from 0.04 to 0.07 mol/L,whereas that of S was fixed at 0.1 mol/*** present work focuses on the effect of the different precursor’s molarities on the nature and the properties of the prepared thin films in order to optimize the growth conditions.X-ray diffraction analysis reveals that the precursor’s molarities alter the grain size of the prepared films,which varied from 8 to 14 nm and from 12 to 16 nm,according to the used *** films analysis by SEM,shows that the SnS2 films are more dense and smooth than the SnS *** composition of the elements is analysed with an EDX spectrometer,and the obtained result for M（sn）=0：07 mol/L indicates that the atomic ratio of Sn to S is 51.57：48：43 and 36：64 for films synthesized from the first and second precursors *** measurements show that the conductivity behavior depends on the used precursors and their molarities.

关键词： precursors ultrasonic spray tin sulfide semiconductor thin films characterization

Solution flow rate influence on ZnS thin films properties grown by ultrasonic spray for optoelectronic application

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Journal of Semiconductors 2018年第9期39卷 1-7页

作者： A.Derbali H.Saidi A.Attaf H.Benamra A.Bouhdjer N.Attaf H.Ezzaouia L.Derbali M.S.Aida Laboratory of Thin Films and Applications LPCMA University of Biskra Algeria BP 145 RP 07000 Biskra Algerie Laboratoire de Couches Minces et Interfaces Faculte des Sciences Universite de Constantine Algeria Laboratory of Semiconductors Nanostructures and Advanced Technology (LSNTA) Research and Technology Centreof Energy BorjCedria Science and Technology Park BP 95 2050 Hammam-Lif Tunisia Department of Physics Faculty of Sciences King Abdulaziz University Djeddah KSA

The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction（XRD）, scanning electron microscopy（SEM）, optical transmittance spectroscopy（UV–V） and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the（111） direction. The grain size values were calculated and found to be between 38 to 82 *** analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10^5 and 11 × 10^5 Ω·cm.

关键词： zinc sulphide X-ray diffraction ultrasonic spray solution flow rate optical and electrical properties