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Field induced Chern insulating states in twisted monolayer–bilayer graphene

Chinese Physics B 2024年第6期33卷 69-73页

作者：王政文韩英卓 Kenji Watanabe Takashi Taniguchi 姜宇航毛金海 School of Physical Science and CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China College of Materials Science and Optoelectronic Technology Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Advanced Materials Laboratory National Institute for Materials ScienceTsukuba 305-0044Japan

Unraveling the mechanism underlying topological phases, notably the Chern insulators(Ch Is) in strong correlated systems at the microscopy scale, has captivated significant research interest. Nonetheless, Ch Is harboring topological information have not always manifested themselves, owing to the constraints imposed by displacement fields in certain experimental configurations. In this study, we employ density-tuned scanning tunneling microscopy(DT-STM) to investigate the Ch Is in twisted monolayer–bilayer graphene(t MBG). At zero magnetic field, we observe correlated metallic *** under a magnetic field, a metal–insulator transition happens and an integer Ch I is formed emanating from the filling index s = 3 with a Chern number C = 1. Our results underscore the pivotal role of magnetic fields as a powerful probe for elucidating topological phases in twisted van der waals heterostructures.

关键词： Chern insulators strong correlation effects two-dimensional van der waals heterostructure density-tuned scanning tunneling microscopy(DT-STM)

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Flexible electronics and optoelectronics of 2D van der waals materials

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International Journal of Minerals,Metallurgy and Materials 2022年第4期29卷 671-690页

作者： Huihui Yu Zhihong Cao Zheng Zhang Xiankun Zhang Yue Zhang Academy for Advanced Interdisciplinary Science and Technology School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijing 100083China

Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable *** bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the ***-dimensional van der waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der waals interactions,and excellent mechanical,electrical,and optical ***,2D VdWMs have considerable application potential in functional intelligent flexible *** utilize the unique properties of 2D VdWMs and their van der waals heterostructures,new designs and configurations of electronics and optoelectronics have ***,these new designs and configurations do not consider lattice mismatch and process incompatibility *** this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions ***,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.

关键词： two-dimensional van der waals material two-dimensional van der waals heterostructure flexible electronics flexible optoelectronics

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