检索结果-南通市图书馆

All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory

Science China(Information Sciences) 2023年第8期66卷 203-210页

作者： Xiaojie WANG Zeyang FENG Jingwei CAI Hao TONG Xiangshui MIAO Wuhan National Laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and Technology Hubei Yangtze Memory Laboratories

High-density integration of ferroelectric field-effect transistors(Fe FETs) is hindered by factors such as interfacial states, short-channel effects, and ferroelectricity degradation in ultrathin films. Accordingly, the introduction of two-dimensional(2D) materials could effectively solve these problems. However,most current studies focus on the replacement of Si-based channels with 2D channels. Little progress has been made in addressing issues caused by bulk-phase ferroelectric gate layers, such as the unavoidable rough interfaces and the fading of ferroelectricity in ultrathin films. Herein, the 2D ferroelectric material In2Se3is introduced as the gate dielectric. Combined with 2D insulating h-BN and 2D channel Mo S2, an all-van der Waals(vd W) stacking Fe FET is fabricated to provide a straight solution for the abovementioned issues.First, the robust ferroelectric phase of In2Se3is verified in an ultrathin film case and a high-temperature case, which is outstanding among recently reported 2D ferroelectrics. Second, device-level out-of-plane ferroelectric polarization switching is achieved in the cross-structure device. Based on these results, In2Se3is adopted as the ferroelectric gate dielectric to fabricate all-vd W stacking Fe FETs. The subsequent transistor performance measurement on the fabricated Fe FETs indicates that the ferroelectric polarization of the In2Se3layer plays a dominating role in forming a counterclockwise hysteresis loop. Further pulse response measurements manifest the feasibility of nonvolatile channel conductance tuning of these devices with a proper pulse design. Our findings suggest that In2Se3is a suitable 2D ferroelectric gate material and that all-vd W stacking Fe FETs based on 2D ferroelectrics are promising in the application of high-density memory.

关键词： high-density memory ferroelectric field-effecttransistors two-dimensional ferroelectrics van der Waals In$_{2}$Se$_{3}$

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：