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Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

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Frontiers of Chemical Science and Engineering 2024年第2期18卷 41-67页

作者： Yulun Liu Yaojie Zhu Zuowei Yan Ruixue Bai Xilin Zhang Yanbo Ren Xiaoyu Cheng Hui Ma Chongyun Jiang College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300350China School of Physical Science and Technology Tiangong UniversityTianjin 300387China

Excitonic devices are an emerging class of technology that utilizes excitons as carriers for encoding, transmitting, and storing information. Van der Waals heterostructures based on transition metal dichalcogenides often exhibit a type II band alignment, which facilitates the generation of interlayer excitons. As a bonded pair of electrons and holes in the separation layer, interlayer excitons offer the chance to investigate exciton transport due to their intrinsic out-of-plane dipole moment and extended exciton lifetime. Furthermore, interlayer excitons can potentially analyze other encoding strategies for information processing beyond the conventional utilization of spin and charge. The review provided valuable insights and recommendations for researchers studying interlayer excitonic devices within van der Waals heterostructures based on transition metal dichalcogenides. Firstly, we provide an overview of the essential attributes of transition metal dichalcogenide materials, focusing on their fundamental properties, excitonic effects, and the distinctive features exhibited by interlayer excitons in van der Waals heterostructures. Subsequently, this discourse emphasizes the recent advancements in interlayer excitonic devices founded on van der Waals heterostructures, with specific attention is given to the utilization of valley electronics for information processing, employing the valley index. In conclusion, this paper examines the potential and current challenges associated with excitonic devices.

关键词： excitonic devices van der Waals heterostructures transition metal dichalcogenides interlayer excitons valley-Hall effect optoelectronics

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

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Nano Research 2022年第1期15卷 123-144页

作者： Songyu Li Yang Ma Nabonswende Aida Nadege Ouedraogo Famin Liu Congya You Wenjie Deng Yongzhe Zhang School of Physics Beihang UniversityBeijing 100191China Key Laboratory of Advanced Functional Materials Ministry of EducationCollege of Materials Science and EngineeringBeijing University of TechnologyBeijing 100124China

Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To take full advantage of TMDC characteristics and efficiently design the device structures,one of the most key processes is to control their p-/n-type modulation.In this review,we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring,substitutional doping,surface charge transfer,chemical intercalation,electrostatic modulation,and dielectric interface engineering.The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics.Finally,challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.

关键词： transition metal dichalcogenides p-/n-type modulation doping method electronic devices optoelectronic devices

Catalyst activation: Surface doping effects of group Ⅵ transition metal dichalcogenides towards hydrogen evolution reaction in acidic media

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Journal of Energy Chemistry 2022年第9期31卷 217-240,I0007页

作者： Bibi Ruqi Mrinal Kanti Kabiraz Jong Wook Hong Sang-Il Choi Department of Chemistry and Green-Nano Materials Research Center Kyungpook National UniversityDaegu 41566Republic of Korea Department of Hydrogen&Renewable Energy Kyungpook National UniversityDaegu 41566Republic of Korea Department of Chemistry University of UlsanUlsan 44776Republic of Korea

Two-dimensional(2D) transition metal dichalcogenides(TMDs) have emerged as promising alternatives to the platinum-based catalysts for hydrogen evolution reaction(HER). The edge site of these2D materials exhibits HER-active properties, whereas the large-area basal plane is inactive.Therefore, recent studies and methodologies have been investigated to improve the performance of TMD-based materials by activating inactive sites through elemental doping strategies. In this review,we focus on the metal and non-metal dopant effects on group VI TMDs such as MoS_(2) MoSe_(2) WS_(2)and WSe_(2) for promoting HER performances in acidic electrolytes. A general introduction to the HER is initially provided to explain the parameters in accessing the catalytic performance of dopedTMDs. Then, synthetic methods for doped-TMDs and their HER performances are introduced in order to understand the effect of various dopants including metallic and non-metallic elements. Finally, the current challenges and future opportunities are summarized to provide insights into developing highly active and stable doped-TMD materials and valuable guidelines for engineering TMD-based nanocatalysts for practical water splitting technologies.

关键词： 2D materials transition metal dichalcogenides Dopant effect Catalytic surface Hydrogen evolution reaction

Flexoelectricity enhanced water splitting and hydrogen evolution reaction on grain boundaries of monolayer transition metal dichalcogenides

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Nano Research 2022年第2期15卷 978-984页

作者： Mingjie Pu Dong Wang Zhuhua Zhang Yufeng Guo Wanlin Guo State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices College of Aerospace EngineeringNanjing University of Aeronautics and AstronauticsNanjing 210016China

Our extensive first-principles calculations reveal that the chemical activities of monolayer transition metal dichalcogenides(TMDs)MX_(2)(M=Mo or W,and X=Te,Se,or S)for water splitting and hydrogen evolution are modified and promoted on their grain boundaries(GBs)when in-plane tensile loadings are applied.Compared with monolayer TMDs without GBs,the flexoelectricity induced by nonuniform deformation and strain gradient significantly enhances the charge polarizations of X and M atoms at the GB sites of monolayer TMDs,which facilitates the dissociation of water molecules on the GB sites and reduces the reaction barrier of hydrogen evolution reaction.The energy barriers of splitting water molecules and hydrogen adsorption free energies on the GB sites decrease with increasing the flexoelectric effect.These results highlight an attractive way of utilizing the flexoelectric effect of GB-containing TMDs to improve their surface catalytic capability for hydrogen generation.

关键词： flexoelectricity transition metal dichalcogenides grain boundaries water splitting hydrogen evolution reaction

Current advances of transition metal dichalcogenides in electromagnetic wave absorption:A brief review

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International Journal of Minerals,metallurgy and Materials 2023年第3期30卷 428-445页

作者： Shijie Zhang Jiying Li Xiaotian Jin Guanglei Wu School of Material Science and Engineering Henan Province Engineering Research Center of New Cermet Matrix CompositesHenan University of TechnologyZhengzhou 450001China Institute of Materials for Energy and Environment State Key Laboratory of Bio-fibers and Eco-textilesCollege of Materials Science and EngineeringQingdao UniversityQingdao 266071China

transition metal dichalcogenides(TMDs)show great advantages in electromagnetic wave(EMW)absorption due to their unique structure and electrical properties.Tremendous research works on TMD-based EMW absorbers have been conducted in the last three years,and the comprehensive and systematical summary is still a rarity.Therefore,it is of great significance to elaborate on the interaction among the morphologies,structures,phases,components,and EMW absorption performances of TMD-based absorbers.This review is devoted to analyzing TMD-based absorbers from the following perspectives:the EMW absorption regulation strategies of TMDs and the latest progress of TMD-based hybrids as EMW absorbers.The absorption mechanisms and component-performance dependency of these achievements are also summarized.Finally,a straightforward insight into industrial revolution upgrading in this promising field is proposed.

关键词： transition metal dichalcogenides phase manipulation hybrids hierarchical structure absorption mechanism

Growing Biomorphic transition metal dichalcogenides and Their Alloys Toward High Permeable Membranes and Efficient Electrocatalysts Applications

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Energy & Environmental Materials 2023年第3期6卷 150-160页

作者： Lijie Zhu Yahuan Huan Zhaoqian Zhang Pengfei Yang Jingyi Hu Yuping Shi Fangfang Cui Yanfeng Zhang School of Materials Science and Engineering Peking UniversityBeijing 100871China State Key Laboratory of Separation Membranes and Membrane Process School of Materials Science and EngineeringTiangong UniversityTianjin 300387China

3D architecratured transition metal dichalcogenides constructed by atomically thin layers are appealing building blocks in various applications,such as catalysts,energy storage,conversions,sensors,and so on.However,the direct growth of 3D transition metal dichalcogenides architectures with high crystal quality and well-controlled size/thickness remains a huge challenge.Herein,we report a facile,highly-repeatable,and versatile chemical vapor deposition strategy,for the mass production of high-quality 3D-architecratured transition metal dichalcogenides(e.g.,MoS_(2),WS_(2),and ReS_(2))and their alloys(e.g.,W_(x)Mo(1–x)S_(2)and Rex Mo_((1–x))S_(2))nanosheets on naturally abundant and low-cost diatomite templates.Particularly,the purified transition metal dichalcogenides products exhibit unique and designable 3D biomorphic hierarchical microstructures,controllable layer thicknesses,tailorable chemical compositions,and good crystallinities.The weak interlayer interactions endow them with good dispersity in solutions to form stable additive-free inks for solution-processing-based applications,for example,high-permeable and high-stable separation membranes for water purification,and efficient electrocatalysts for hydrogen evolution reactions.This work paves ways for the low-cost,mass production of versatile transition metal dichalcogenides powder-like materials with designable structures and properties,toward energy/environmental-related applications and beyond.

关键词： biomorphic chemical vapor deposition hydrogen evolution reactions separation membranes transition metal dichalcogenides

Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides: Three strategies

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Frontiers of physics 2022年第6期17卷 35-50页

作者： Mo Cheng Junbo Yang Xiaohui Li Hui Li Ruofan Du Jianping Shi Jun He The Institute for Advanced Studies Wuhan UniversityWuhan 430072China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China

Two-dimensional(2D)semiconductors are emerging as promising candidates for the next-generation nanoelectronics.As a type of unique channel materials,2D semiconducting transition metal dichalcogenides(TMDCs),such as MoS2 and WS2,exhibit great potential for the state-of-the-art fieldeffect transistors owing to their atomically thin thicknesses,dangling-band free surfaces,and abundant band structures.Even so,the device performances of 2D semiconducting TMDCs are still failing to reach the theoretical values so far,which is attributed to the intrinsic defects,excessive doping,and daunting contacts between electrodes and channels.In this article,we review the up-to-date three strategies for improving the device performances of 2D semiconducting TMDCs:(i)the controllable synthesis of wafer-scale 2D semiconducting TMDCs single crystals to reduce the evolution of grain boundaries,(ii)the ingenious doping of 2D semiconducting TMDCs to modulate the band structures and suppress the impurity scatterings,and(iii)the optimization design of interfacial contacts between electrodes and channels to reduce the Schottky barrier heights and contact resistances.In the end,the challenges regarding the improvement of device performances of 2D semiconducting TMDCs are highlighted,and the further research directions are also proposed.We believe that this review is comprehensive and insightful for downscaling the electronic devices and extending the Moore’s law.

关键词： 2D semiconductor transition metal dichalcogenides waferscale single crystal ingenious doping interfacial contact device performance

Synthesizability of transition-metal dichalcogenides:a systematic first-principles evaluation

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Materials Futures 2023年第1期2卷 133-143页

作者： Tenglong Lu Yanan Wang Guanghui Cai Huaxian Jia Xinxin Liu Cui Zhang Sheng Meng Miao Liu Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190People’s Republic of China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049People’s Republic of China Songshan Lake Materials Laboratory Guangdong 523808People’s Republic of China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049People’s Republic of China

transition metal dichalcogenides(TMDs)are a class of materials with various useful properties,and it is worthwhile to have a thorough evaluation of the characteristics of the TMDs,most importantly,their structural stability and exfoliability,in a systematic fashion.Here,by employing high-throughput first-principles calculations,we investigate the vast phase space of TMDs,including 16 bulk phases and 6 monolayer phases for all possible TMD combinations[comprising(3d,4d,5d)transition-metal cations and(S,Se,Te)anions],totaling 1386 compounds.Through the‘bird-view’of the as-large-as-possible configurational and chemical space of TMDs,our work presents comprehensive energy landscapes to elucidate the thermodynamic stability as well as the exfoliability of TMDs,which are of vital importance for future synthesis and exploration towards large-scale industrial applications.

关键词： transition metal dichalcogenides high-throughput calculations stability exfoliability

transition metal dichalcogenides(WS2 and MoS2)Saturable Absorbers for Mode-Locked Erbium-Doped Fiber Lasers

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Chinese Physics Letters 2017年第1期34卷 48-51页

作者： N.A.A.Kadir E.I.Ismail A.A.Latiff H.Ahmad H.Arof S.W.Harun Department of Electrical Engineering Faculty of EngineeringUniversity of MalayaKuala Lumpur 50603Malaysia Photonics Research Center University of MalayaKuala Lumpur 50603Malaysia

We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS2) and molybdenum disulfide (MoS2) as saturable absorber (SA). These materials are fabricated via a simple drop-casting method. By employing WS2, we obtain a stable harmonic mode-locking at the threshold pump power of 184 mW, and the generated soliton pulse has 3.48 MHz of repetition rate. At the maximum pump power of 250 mW, we also obtain a small value of pulse duration, 2.43 ps with signal-to-noise ratio (SNR) of 57 dB. For MoS2 SA, the pulse is generated at 105 mW pump power with repetition rate of 1.16 MHz. However, the pulse duration cannot be detected by the autocorrelator device as the pulse duration recorded is 468 ns, with the SNR value of 35 dB.

关键词： WS2 and MoS2 SA transition metal dichalcogenides Saturable Absorbers for Mode-Locked Erbium-Doped Fiber Lasers