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Theoretical Studies on Novel Gridspiroarenes: Structures, Noncovalent Interactions and Reorganization Energies

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Chinese Journal of Chemistry 2019年第9期37卷 915-921页

作者： Lei Yang Cheng-Zhu Yin Mohamad Akbar Ali Chao-Yang Dong Xin-Miao Xie Xiang-Ping Wu Jie Mao Yong-Xia Wang Yang Yu Ling-Hai Xie Lin-Yi Bian Jian-Min Bao Xue-Qin Ran Wei Huang Centre for Molecular Systems and Organic Devices(CMSOD) Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for BiosensorsInstitute of Advanced Materials(IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjingJiangsu 210023China Department of Chemistry College of Science King Faisal UniversityAl-Ahsa31982Kingdom of Saudi Arabia Key Laboratory of Flexible Electronics(KLOFE)& Institute of Advanced Material(IAM) Jiangsu National Synergetic Innovation Center for Advanced Material(SICAM)Nanjing Tech University(Nanjing Tech)30 South Puzhu RoadNanjingJiangsu 211816China Shaanxi Institute of Flexible Electronics(SIFE) Northwestern Polytechnical University(NPU)127 West Youyi RoadXi'anShaanxi 710072China

Organic semiconductor materials with low reorganization energy have various applications such as in organic light-emitting diodes (OLEDs),organic field-effect transistor (OFETs) and organic solar cells (OSCs).In this work,we have designed a new class of gridspiroarenes (GS-SFX and GS-SITF) with #-shaped structures,which have novel crisscross geometrical structures compared to widely used spirocyclic arenes-SFX and SITF.The structure electronic properties,adiabatic ionization potentials (IPa),adiabatic electron affinities (EAa) and reorganization energies (λ) of GS-SFX and GS-SITF have been calculated using density functional theory (DFT) method.The calculated HOMO and LUMO spatial distributions suggest that GS-SFX and GS-SITF have better transport properties.The noncovalent interaction analysis shows the weak intramolecular interactions between their arms.The results indicate that the reorganization energies of GS-SFX and GS-SITF are significantly reduced compared to the dimer structures-DSFX and DSITF.Furthermore,the GS-SITF1 which is one of the isomers of GS-SITF exhibits the lowest values for λ(h)(0.067 eV) and λ(e)(0.153 eV).Therefore,we believe the predicted structure,electronic property,and reorganization energy are good indicator for transport materials.This work has systematically studied the effect of gridization,which provides insights to design organic semiconductor materials with excellent charge transport properties.

关键词： organic light-emitting diodes (OLEDs) organic field-effect transistor (OFETs) organic solar cells (OSCs)

Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

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Nano Research 2015年第7期8卷 2206-2215页

作者： Alex Henning Nandhini Swaminathan Andrey Godkin Gil Shalev Iddo Amit Yossi Rosenwaks Department of Physical Electronics School of Electrical Engineering TeI-Aviv University Ramat-Aviv 69978 Israel

We report on an electrostatically formed nanowire （EFN）-based sensor with tunable diameters in the range of 16 nm to 46 nm and demonstrate an EFN- based field-effect transistor as a highly sensitive and robust room temperature gas sensor. The device was carefully designed and fabricated using standard integrated processing to achieve the 16 nm EFN that can be used for sensing without any need for surface modification. The effective diameter for the EFN was determined using Kelvin probe force microscopy accompanied by three- dimensional electrostatic simulations. We show that the EFN transistor is capable of detecting 100 parts per million of ethanol gas with bare SiO2.

关键词： gas sensing,silicon nanowires, Kelvin probe forcemicroscopy (KPFM), electrostatic confinement,multiple gate transistor

Recent Progresses on the High Performance Organic Electrochemical transistors

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Chemical Research in Chinese Universities 2021年第5期37卷 975-988页

作者： JIANG Xingyu WANG Qi WANG Zi DONG Bin HUANG Lizhen CHI Lifeng Institute of Functional Nano&Soft Materials(FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials&DevicesSoochow UniversitySuzhou215123P.R.China

Organic electrochemical transistor(OECT)with bulk current modulation capability based on the ion penetration into the organic semiconducting channel exhibits unique features,including high transconductance,low voltage and large capacitance.The high current at a low voltage,together with the compatibility with aqueous environment,makes OECT particularly suitable for bioelectronic applications,such as biological interfacing,printed logic circuitry and neuromorphic devices.

关键词： transistor capacitance compatibility

Density functional theory study on organic semiconductor for field effect transistors: Symmetrical and unsymmetrical porphyrazine derivatives with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene moieties

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Science China Chemistry 2009年第6期52卷 840-848页

作者： CAI Xue ZHANG YueXing QI DongDong JIANG JianZhuang Department of Chemistry University of Science and Technology BeijingBeijing 100083China Department of Chemistry Mudanjiang Normal CollegeMudanjiang 157012China Department of Chemistry Shandong UniversityJinan 250100China

Density functional theory (DFT) calculations were carried out to investigate the organic field effect transistor (OFET) performance of the symmetrical metal-free tetrakis (1,2,5-thiadiazole) porphyrazine (S4)PzH2 and tetrakis (1,4-diamyloxybenzene) (A4)PzH2 as well as the low-symmetry metal-free porphy- razine with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene groups in the ratio 2:2 (cis) and 1:3, that is, (cis-S2A2)PzH2 and (SA3)PzH2, (S = 1,2,5-thiadiazole ring, A = annulated 1,4-diamyloxy-benzene ring, Pz = porphyrazine) in terms of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy, ionization energy (IE), electron affinity (EA), and their reorganization energy (λ) during the charge-transport process. On the basis of Marcus electron transfer theory, electronic couplings (V) and field effect transistor (FET) properties for the four compounds with known crystal structure have been calculated. The electron transfer mobility (μ -) is revealed to be 0.056 cm2·V-1·s-1 for (S4)PzH2. The hole transfer mobility (μ+) is 0.075, 0.098, and 8.20 cm2·V-1·s-1 for (cis-S2A2)PzH2, (SA3)PzH2, and (A4)PzH2, respectively. The present work represents the theoretical effort towards understanding the OFET properties of symmetrical and unsymmetrical porphyrazine derivatives with annulated 1,2,5-thiadiazole and 1,4-diamyloxybenzene.

关键词： porphyrazine organic field effect transistor reorganization energy density functional theory

WSe2 2D p-type semiconductor-based electronic devices for information technology:Design,preparation,and applications

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InfoMat 2020年第4期2卷 656-697页

作者： Qilin Cheng Jinbo Pang Dehui Sun Jingang Wang Shu Zhang Fan Liu Yuke Chen Ruiqi Yang Na Liang Xiheng Lu Yanchen Ji Jian Wang Congcong Zhang Yuanhua Sang Hong Liu Weijia Zhou Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinanChina School of Chemistry and Chemical Engineering University of JinanJinanChina State Key Laboratory of Crystal Materials Center of Bio and Micro/Nano Functional MaterialsShandong UniversityJinanChina

The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications.WSe2 belongs to a family of transition-metal dichalcogenides.Similar to graphene,WSe2 and analogous dichalcogenides have layered structures with weak van der Waals interactions between two adjacent layers.First,the readers are presented with the fundamentals of WSe2,such as types,morphologies,and properties.Here,we report the characterization principles and practices such as microscopy,spectroscopy,and diffraction.Second,the methods for obtaining high-quality WSe2,such as exfoliation,hydrothermal and chemical vapor deposition,are briefly listed.With advantages of light weight,flexibility,and high quantum efficiency,2D materials may have a niche in optoelectronics as building blocks in p-n junctions.Therefore,we introduce a state-of-the-art demonstration of heterostructure devices employing the p-type WSe2 semiconductor.The device architectures include field-effect transistors,photodetectors,gas sensors,and photovoltaic solar cells.Due to its unique electronic,optical,and energy band properties,WSe2 has been increasingly investigated due to the conductivity of the p-type charge carrier upon palladium contact.Eventually,the dynamic research on WSe2 and van der Waals heterostructures is summarized to arouse the passion of the 2D research community.

关键词： chemical vapor deposition electronics memory photoelectronics TMDCs transistor

Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors

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npj Computational Materials 2020年第1期6卷 1446-1454页

作者： Akiko Ueda Yijin Zhang Nobuyuki Sano Hiroshi Imamura Yoshihiro Iwasa National Institute of Advanced Industrial Science and Technology(AIST) Spintronics Research CenterTsukuba 305-8568Japan Department of Electrical Engineering Columbia UniversityNew YorkNYUSA The Institute of Scientific and Industrial Research Osaka UniversityOsaka 067-0047Japan Max Planck Institute for Solid State Research 70569 StuttgartGermany Institute of Applied Physics University of TsukubaTsukuba 305-8573Japan Department of Applied Physics and Quantum-Phase Electronics(QPEC)Center The University of TokyoTokyo 113-8656Japan RIKEN Center for Emergent Matter Science(CEMS)Wako 351-0198Japan

Ionic gating is known as a powerful tool for investigation of electronic functionalities stemming from low voltage transistor operation to gate-induced electronic phase control including superconductivity.Two-dimensional(2D)material is one of the archetypal channel materials which exhibit a variety of gate-induced phenomena.Nevertheless,the device simulations on such iongated transistor devices have never been reported,despite its importance for the future design of device structures.In this paper,we developed a drift-diffusion(DD)model on a 2D material,WSe2 monolayer,attached with an ionic liquid,and succeeded in simulating the transport properties,potential profile,carrier density distributions in the transistor configuration.

关键词： transistor bipolar diffusion

Two-dimensional self-healing hydrogen-bond-based supramolecula polymer film

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Chinese Chemical Letters 2019年第5期30卷 961-965页

作者： Mengnan He Xiaosong Chen Donghua Liu Dacheng Wei State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University

Self-healing materials have been developed over the past decade with the recovery ability after damage.However,most researches focused on the self-healing process at three-dimension.Herein,we prepare monolayer self-healing hydrogen-bond-based supramolecular polymer film and explore the self-healing process at the two-dimensional limit.The healing process,which can be reversibly repeated for at least three times,is influenced by the temperature,the molecule-substrate interaction and the substrate roughness.In the application,the monolayer self-healing polymer film can be used to modify the SiO2 dielectric for copper phthalocyanine field effect transistor with improved mobility.This work will be valuable for developing two-dimensional functional self-healing materials in the future.

关键词： Supramolecular polymer Self-healing Monolayer film Self-assembly Organic field effect transistor

Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

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Nano Research 2021年第7期14卷 2469-2469页

作者： Chaoqi Dai Peiqin Chen Shaocheng Qi Yongbin Hu Zhitang Song Mingzhi Dai College of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093China Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Shanghai Microsystem and Information Technology Institute Chinese Academy of SciencesShanghai 200433China

The article "Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint" written by Chaoqi Dai,Peiqin Chen,Shaocheng Qi,Yongbin Hu,Zhitang Song,and Mingzhi Dai,was erroneously originally published electronically on the publisher’internet portal(currently SpringerLink)on 30 September 2020 with caption of Fig.1 and related context,and the Acknowledgements.

关键词： transistor InGaZnO functions

Design and Construction of a Microcontroller Based Electronic Moving Message Display

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Open Journal of Applied Sciences 2022年第4期12卷 434-454页

作者： Titus Taofk Ogunseye Godwin Babatunde Egbeyale Adekunle K. Bello Adegbenro S. Ajani University of Ibadan Ibadan Nigeria Kwara State University Malete Nigeria Bell University Ota Nigeria

LED-based moving-message displays are becoming appreciated among the general public for transmitting information to groups of people quickly. This work presents a simple design and implementation of a microcontroller-based electronic moving message display system. The design involves the arrangement of Light Emitting Diodes (LEDs) and the programming of a microcontroller that controls and determines the pattern and session of the display. The implementation of a moving message displays a text containing 22 characters (i.e. WELCOME TO DEPT. OF PHYSICS). The electronic message display helps to pass information, educates, enlightens, facilitates commercial activities through the advertisement and marketing of goods and services, description of places, etc. The ease in which it displays information makes it a veritable, suitable, and excellent tool for passing information fast and pleasurable to the public. Furthermore, it enhances the response to information in an attractive way and manner in which it displays messages. The microcontroller used in this work is the PIC16F84A. It belongs to a class of 8-bit microcontrollers of RISC (reduced instructions set) architecture. Its output controls the switching of the relays through a transistor switching stage that switches its socket. The LED matrix (array) is arranged in parallel and soldered to a Vero board with the microcontroller and other electronic components, such as resistors, capacitors, transistors, relays, LEDs, diodes, and transformers. In view, this work served as a means of digging into the technology involved in the use of a microcontroller and some other basic electronic components and enhanced visualization of message display.

关键词： Microcontroller LEDs transistor Relays Transformer Diodes