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Two-dimensional quantum transport of multivalley （111） surface state in topological crystalline insulator SnTe thin films

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Nano Research 2016年第2期9卷 490-498页

作者： Ryota Akiyama Kazuki Fujisawa Tomonari Yamaguchi Ryo Ishikawa Shinji Kuroda Institute of Materials Science University of Tsukuba Tsukuba 305-8573 Japan

The magneto-transport properties of （111）-oriented single-crystal thin films of SnTe were investigated. SnTe （111） thin films were epitaxially grown on a BaF2 substrate by molecular beam epitaxy. By optimizing the growth conditions and the thickness of the films, the bulk carrier density could be reduced, making it possible to detect the surface transport. Magneto-conductance （MC） measurements show a cusp-like feature around zero magnetic field, which is attributed to the weak-antilocalization effect of the transport in the topological surface state. Detailed analysis of this negative MC reveals a reduced number of transport channels contributing to the surface transport, suggesting strong coupling between Dirac valleys on the SnTe （111） surface, as a characteristic feature of the transport in the multivalley structure of topological crystalline insulators.

关键词： SnTe (111) films topological crystalline insulators weak antilocalization phase coherence length Dirac valleys

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Self-organization of various“phase-separated”nanostructures in a single chemical vapor deposition

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Nano Research 2020年第6期13卷 1723-1732页

作者： Jinmei Wang Dongyue Xie Zhen Li Xiaohang Zhang Xing Sun Amanda L.Coughlin Thomas Ruch Qiang Chen Yaroslav Losovyj Seunghun Lee Heshan Yu Haidong Zhou Haiyan Wang Jian Wang Shixiong Zhang Department of Physics Indiana UniversityBloomingtonIndiana47405USA Department of Mechanical&Materials Engineering University of Nebraska-LincolnLincolnNE68588USA Department of Materials Science and Engineering University of MarylandCollege ParkMaryland20742USA School of Materials Engineering Purdue UniversityWest LafayetteIndiana47907USA Department of Physics and Astronomy University of TennesseeKnoxvilleTennessee37996USA Department of Chemistry Indiana UniversityBloomingtonIndiana47408USA College of Optoelectronic Engineering Chongqing University of Posts and TelecommunicationsChongqing400065China Department of Materials Science and NanoEngineering Rice UniversityHoustonTexas77005USA

Chemical vapor deposition(CVD)is one of the most versatile techniques for the controlled synthesis of functional *** multiple precursors are induced,the CVD process often gives rise to the growth of doped or alloy *** this work,we demonstrate the self-assembly of a variety of‘phase-separated’functional nanostructures from a single CVD in the presence of various *** specific,with silicon substrate and powder of Mn and SnTe as precursors,we achieved self-organized nanostructures including Si/SiOx core-shell nanowire heterostructures both with and without embedded manganese silicide particles,Mn11Si19 nanowires,and SnTe *** Si/SiOx core-shell nanowires embedded with manganese silicide particles were grown along thedirection of the crystalline Si via an Au-catalyzed vapor-liquid-solid process,in which the Si and Mn vapors were supplied from the heated silicon substrates and Mn powder,*** contrast,direct vapor-solid deposition led to particle-free-oriented Si/SiOx core-shell nanowires and-oriented Mn11Si19 nanowires,a promising thermoelectric *** Sn or Te impurities were detected in these nanostructures down to the experimental *** crystalline insulator SnTe nanoplates with dominant{100}and{111}facets were found to be free of Mn(and Si)impurities,although nanoparticles and nanowires containing Mn were found in the vicinity of the *** multiple-channel transport was observed in the SnTe nanoplates,it may not be related to the topological surface states due to surface ***,we carried out thermodynamic analysis and density functional theory calculations to understand the‘phase-separation’phenomenon and further discuss general approaches to grow phase-pure samples when the precursors contain residual impurities.

关键词： nanomaterials synthesis silicon nanowires topological crystalline insulators phase separation chemical vapor deposition

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