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Transport property of topological crystalline insulator SnTe(100)and ferrimagnetic insulator heterostructures

Journal of Materials Science & Technology 2022年第36期131卷 204-211页

作者： Anqi Zhang Daheng Liu Teng Yang Song Ma Zhidong Zhang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China

topological crystalline insulator(TCI)SnTe is a potential material for quantum electronic devices because of its attractive inherent sensitivity of band topology and highly mobile characteristic of Dirac *** proximity effect at the interface of SnTe film can affect the topological surface transport and may result in novel quantum magneto-electric ***,we study the magnetoelectrical transport properties of SnTe thin films grown on ferrimagnetic insulators Eu_3Fe_5O_(12)(110)(EuIG(110))and Y_(3)Fe_(5)O_(12)(111)(YIG(111))single-crystal underlayers by molecular beam *** magnetic resistance(LMR)is observed in SnTe/Eu IG heterostructures in the low field range,which is different from the weak antilocalization(WAL)characteristic of SnTe/YIG ***,the double carrier characteristic with the coexistence of holes and electrons in SnTe/Eu IG heterostructure is quite different from the holes as main carriers in SnTe/YIG,although the SnTe layer remains the same crystal plane(100)in the two *** LMR in SnTe/Eu IG is attributed to the topological surface Dirac electrons and disordered domain distribution in the SnTe layer which is in sharp contrast to the WAL of SnTe/YIG with ordered domain distribution in the SnTe *** present studies of transport properties not only provide a fundamental understanding of the transport mechanism of TCI and magnetite insulator heterostructure but also display the promising application probability for tunable topological electronic devices.

关键词： topological crystalline insulator Ferrimagnetic insulators Linear magnetoresistance Electrical transport Molecular beam epitaxy

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Layer construction of topological crystalline insulator LaSbTe

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Science China(Physics,Mechanics & Astronomy) 2020年第10期63卷 91-97页

作者： YuTing Qian ZhiYun Tan Tan Zhang JiaCheng Gao ZhiJun Wang Zhong Fang Chen Fang HongMing Weng Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China School of Physics and Electronic Science Zunyi Normal UniversityZunyi 563006China Songshan Lake Materials Laboratory Dongguan 523808China CAS Center for Excellence in topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China

topological crystalline insulator(TCI)is one of the symmetry-protected topological *** TCI can be deformed into a simple product state of several decoupled two-dimensional(2 D)topologically nontrivial layers in its lattice respecting its crystalline symmetries called the layer construction(LC)*** this work,based on first-principles calculations we have revealed that both tetragonal LaSbTe(t-LaSbTe)and orthorhombic LaSbTe(o-LaSbTe)can be interpreted as stacking of 2 D topological insulators in each lattice *** structural phase transition from t-LaSbTe to o-LaSbTe due to soft phonon modes demonstrates how the real space change can lead to the modification of topological *** symmetry-based indicators and topological invariants have been analyzed based on *** propose that LaSbTe is an ideal example demonstrating the LC paradigm,which bridges the crystal structures in real space to the band topology in momentum space.

关键词： layer construction topological crystalline insulator topological insulator LaSbTe

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Three-dimensional topological crystalline insulator without spin-orbit coupling in nonsymmorphic photonic metacrystal

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Chinese Physics B 2024年第10期33卷 282-286页

作者： Zhide Yu Lingbo Xia School of Physics and Electronics Hunan UniversityChangsha 410082China

By including certain point group symmetry in the classification of band topology,Fu proposed a class of threedimensionaltopological crystalline insulators(TCIs)without spin-orbit coupling in *** Fu’s model,surface states(ifpresent)doubly degenerate atГandM when time-reversal and C_(4) symmetries are *** analogs of Fu’s modelwith surface states quadratically degenerate atM are widely studied,while surface states with quadratic degeneracy atГare rarely *** this study,we propose a three-dimensional TCI without spin-orbit coupling in a judiciously designednonsymmorphic photonic *** surface states of photonic TCIs exhibit quadratic band degeneracy in the(001)surface Brillouin zone(BZ)center(Гpoint).The gapless surface states and their quadratic dispersion are protected by C4and time-reversal symmetries,which correspond to the nontrivial band topology characterized by Z_(2)topological ***,the surface states along lines fromГto the(001)surface BZ boundary exhibit zigzag feature,which is interpretedfrom symmetry perspective by building composite operators constructed by the product of glide symmetries with *** metacrystal array surrounded with air possesses high order hinge states with electric fields highlylocalized at the hinge that may apply to optical *** gapless surface states and hinge states reside in a cleanfrequency *** topological surface states emerge at the boundary of the metacrystal and perfect electric conductor(PEC),which provide a pathway for topologically manipulating light propagation in photonic devices.

关键词： topological crystalline insulator nonsymmorphic photonic metacrystal

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Structure and topological transport in Pb-doping topological crystalline insulator SnTe(001)film

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Journal of Materials Science & Technology 2020年第9期44卷 223-228页

作者： C.H.Yan F.Wei Y.Bai F.Wang A.Q.Zhang S.Ma W.Liu Z.D.Zhang shenyang national laboratory for materials science institute of metal researchchinese academy of sciencesshenyang 110016china university of chinese academy of sciences beijing 100049china school of materials science and engineering university of science and technology of chinahefei 230026china

topological crystalline insulator(TCI)as a new type of topological materials has attracted extensive research interests for its tunable topological *** its symmetry topological protection essence,the structure investigation provides a solid basement for tuning its topological transport *** SrTiO3(111)substrate,the SnTe film was found to be epitaxial growth only along[001]while not[111]*** detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe(001)*** transport properties of SnTe(001)film were further investigated and a typical weak anti-localization effect was *** Pb-doping into SnTe,the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport *** tunable multiple transport channels from the even Dirac cones,the TCI SnTe film systems will have the potential application in future spintronics devices.

关键词： topological crystalline insulator Surface state SnTe

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Experimental evidence of the thickness- and electric-field-dependent topological phase transitions intopological crystalline insulator SnTe（111） thin films

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Nano Research 2018年第11期11卷 6045-6050页

作者： Yan Gong Kejing Zhu Zhe Li Yunyi Zang Xiao Feng Ding Zhang Canli Song Lili Wang Wei Li Xi Chen Xu-Cun Ma Qi-Kun Xue Yong Xu Ke He State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China Collaborative Innovation Center of Quantum Matter 8eijing 100084 China

Using in situ angle-resolved photoemission spectroscopy, we systematically studied molecular-beam-epitaxy-grown topological crystalline insulator SnTe(111) thin films with varied thicknesses and substrate conditions. An oscillation in the band gap size with an increase in thickness was observed to depend on the electric field perpendicular to the films. The observations are consistent with the theoretically predicted thickness- and electric-field-dependent topological phase transitions between the normal insulator and the quantum spin Hall insulator phases in SnTe(111) films and demonstrate them to be an excellent and electrically tunable quantum spin Hall system.

关键词： topological crystalline insulator SnTe quantum spin Hall effect field effect

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Fermi level tuning in Sn_(1-x)Pb_(x)Te/Pb heterostructure via changing interface roughness

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Science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 118-125页

作者： Tengteng Liu Zhaoxia Yi Bangjin Xie Weiyan Zheng Dandan Guan Shiyong Wang Hao Zheng Canhua Liu Hao Yang Yaoyi Li Jinfeng Jia Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education) Tsung-Dao Lee InstituteSchool of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China Shanghai Research Center for Quantum Sciences Shanghai 201315China Hefei National Laboratory Hefei 230088China

Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single *** level(FL)close to the Dirac points of topological surface states is helpful for detecting ***,the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or *** this work,we fabricate the atomically flat Sn_(1-x)Pb_(x)Te/Pb heterostructure by molecular beam epitaxy,and make the p-type Sn_(1-x)Pb_(x)Te become n-type through changing the interface *** scanning tunnelling microscope,we find the Dirac points of Sn_(1-x)Pb_(x)Te/Pb heterostructure are always above the FL due to the Fermi level pinning(FLP)induced by topological surface states at atomically flat *** increasing the interface roughness,the FLP effect is suppressed and then the Dirac points of p-type Sn_(1-x)Pb_(x)Te can be tuned very close to or even below the *** work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.

关键词： topological crystalline insulator superconductor heterostructure Fermi level pinning interface roughness

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