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Spin order and dynamics in the topological rare-earth germanide semimetals

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Science China(Physics,Mechanics & Astronomy) 2024年第10期67卷 113-127页

作者： Yuhao Wang Zhixuan Zhen Jing Meng Igor Plokhikh Delong Wu Dariusz J.Gawryluk Yang Xu Qingfeng Zhan Ming Shi Ekaterina Pomjakushina Toni Shiroka Tian Shang Key Laboratory of Polar Materials and Devices(MOE) School of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241China Laboratory for Multiscale Materials and Experiments Paul Scherrer InstitutVilligen PSI CH-5232Switzerland Center for Correlated Matter and School of Physics Zhejiang UniversityHangzhou 310058China Laboratory for Muon-Spin Spectroscopy Paul Scherrer InstitutVilligen PSI CH-5232Switzerland Laboratorium für Festkörperphysik ETH ZürichZürich CH-8093Switzerland

The REAl(Si,Ge)(RE=rare earth)family,known to break both the inversion-and time-reversal symmetries,represents one of the most suitable platforms for investigating the interplay between correlated-electron phenomena and topologically nontrivial ***,we report on systematic magnetic,transport,and muon-spin rotation and relaxation(μSR)measurements on(Nd,Sm)AlGe single crystals,which exhibit antiferromagnetic(AFM)transitions at T_(N)=6.1 and 5.9 K,*** addition,NdAlGe undergoes also an incommensurate-to-commensurate ferrimagnetic transition at 4.5 *** transverse-fieldμSR measurements confirm the AFM transitions,featuring a~90%magnetic volume ***-field(ZF)μSR measurements reveal a more disordered internal field distribution in NdAlGe than in SmAlGe,reflected in a larger transverse muon-spin relaxation rateλTat Ttopological hall effect(THE)appears between the first and the second metamagnetic transitions for H‖c,while it is absent in *** THE in NdAlGe is most likely attributed to the field-induced topological spin *** longitudinal muon-spin relaxation rateλL,diverges near the AFM order,followed by a clear drop at Ttopological spin textures in REAl(Si,Ge)Weyl semimetals.

关键词： magneticWeyl semimetals topological hall effect spin fluctuations μSR

Experimental observation of topological hall effects in compensated ferrimagnet-heavy metal layered structures

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Science China(Physics,Mechanics & Astronomy) 2021年第8期64卷 98-106页

作者： Zheng-Yu Xiao Zhi-Yong Quan Wei Zhang Dong Li Hui-Hui Liu Guo-Wei Zhou Jun Zhang Fei Zhang Xia Liu Xiao-Hong Xu Ming-Zhong Wu Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials ScienceShanxi Normal UniversityLinfen 041004China Research Institute of Materials Science Shanxi Normal UniversityLinfen 041004China Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology Linfen 041004China Department of Physics Colorado State UniversityFort CollinsColorado 80523USA

The topological hall effect(THE) as a powerful probe for the experimental observation of topological spin textures, such as magnetic skyrmions, has been observed in a wide variety of distinct material systems. However, limited experimental observations have been reported for antiferromagnetic(AFM) materials. Here, the THE signals in the AFM state were observed in compensated ferrimagnetic thin films interfaced with heavy metals at the magnetization compensation temperature(TM).Ferrimagnetic CoTb thin films grown on Pt thin films were used in the experiments. The Co Tb films exhibited a magnetization compensation point at which the moments of Co and Tb sublattices canceled each other, giving rise to the AFM state. The temperature(T)-dependent hall measurements showed anomalous hall effect(AHE) and THE responses at T≠T_(M) but pure THE responses at T=T_(M). Control measurements and analyses suggest that the THE responses are associated with interfacial Dzyaloshinskii-Moriya interaction(DMI) rather than the overlapping of different AHE signals in the structure. This work presents the first-ever observation of interfacial DMI-induced THE in AFM metal trilayered systems and demonstrates a new approach for electrical reading of chiral spin textures in AFM thin film-based heterostructures.

关键词： topological hall effect antiferromagnetic state chiral spin textures

Observation of unconventional anomalous hall effect in epitaxial CrTe thin films

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Nano Research 2018年第6期11卷 3116-3121页

作者： Dapeng Zhao Liguo Zhang Iftikhar Ahmed Malik Menghan Liao Wenqiang Cui Xinqiang Cai Cheng Zheng Luxin Li Xiaopeng Hu Ding Zhang Jinxing Zhang Xi Chen Wanjun Jiang Qikun Xue State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China Department of Physics Beijing Normal University Beijing 100875 China Collaborative Innovation Center of Quantum Matter Beijing 100084 China

We have studied the magnetic and electrical transport properties of epitaxial NiAs-type CrTe thin films grown on SrTiO3（111） substrates. Unlike rectangle hysteresis loops obtained from magnetic measurements, we have identified intriguing extra bump/dip features from anomalous hall experiments on the films with thicknesses less than 12 nm. This observed hall anomaly is phenomenologically consistent with the occurrence of a topological hall effect （THE） in chiral magnets with a skyrmion phase. Furthermore, the THE contribution can be tuned by the film thickness, showing the key contribution of asymmetric interfaces in stabilizing N6el-type skyrmions. Our work demonstrates that a CrTe thin film on SrTiO3（111） substrates is a good material candidate for studying real-space topological transport.

关键词： topological hall effect CrTe films skyrmion phase molecular beam epitaxy

Visualization of ferromagnetic domains in vanadium-doped topological insulator thin films and heterostructures

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钨科技(英文) 2023年第3期5卷 288-299页

作者： Ying-Jie Ma Ti-Rui Xia Wen-Bo Wang School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China ShanghaiTech Laboratory for topological Physics ShanghaiTech UniversityShanghai 201210China

Magnetically doped topological insulator(TI) thin films and related heterostructures have been extensively studied for years due to their exotic quantum transport properties and potential applications in low-dissipation electronic devices and quantum *** selection of magnetic dopants is crucial to realize a high-quality magnetic TI with a robust ferromagnetic ordering and a preserved topological band *** this paper,we briefly review the recent magnetic domain imaging works in vanadium-doped magnetic topological insulator thin films and *** cryogenic magnetic force microscopy and in situ transport measurements,a ferromagnetic domain behavior has been demonstrated in V-doped Sb2Te3(ST) and Cr,V co-doped(Bi,Sb)2Te3(BST) thin *** direct visualization of long-range ferromagnetic ordering in a quantum anomalous hall(QAH) system sheds light on enhancing the QAH temperature by improving the *** advantage of the different coercivity of Cr-and V-doped BST films,an axion insulating state has been observed in Cr-doped BST/BST/V-doped BST sandwich *** antiparallel magnetization alignment,which is the key ingredient for realization of axion insulating state,has been directly visualized via magnetic imaging at various magnetic *** V-doped ST/ST heterostructures also provide a platform for Berry phase engineering in momentum *** suppressing the anomalous hall effect in such heterostructures,an intrinsic topological hall effect can be revealed,which resolved the long-term puzzle of the origin of THE in the ultrathin ferromagnetic thin films and two-dimensional *** review of magnetic domain imaging in vanadium-doped topological insulators and heterostructures inspires further exploration of quantum transport properties in magnetic topological insulators and deepens the understanding of the interplay between the magnetic ordering and topological electronic band structures in magne

关键词： Vanadium-doped topological insulator Magnetic force microscopy Ferromagnetic domain Quantum anomalous hall effect topological hall effect